Investigation of leakage current and electric field of polymeric insulator with ring-shaped contamination under ice conditions

2022 ◽  
Author(s):  
Zahra Ghiasi ◽  
Faramarz Faghihi ◽  
Amir Abbas Shayegani-Akmal
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Ice Conditions

Numerical Simulation of Leakage Current on Conductive Insulator Surface

2019 ◽  
Vol 8 (4) ◽  
pp. 9487-9492
Keyword(s):  
Numerical Simulation ◽  
Electric Field ◽  
Leakage Current ◽  
Method Of Lines ◽  
Electron Attachment ◽  
Negative Ions ◽  
Conduction Current ◽  
Insulator Surface ◽  
Finite Difference Approximations ◽  
Positive Ions

The outdoor insulator is commonly exposed to environmental pollution. The presence of water like raindrops and dew on the contaminant surface can lead to surface degradation due to leakage current. However, the physical process of this phenomenon is not well understood. Hence, in this study we develop a mathematical model of leakage current on the outdoor insulator surface using the Nernst Planck theory which accounts for the charge transport between the electrodes (negative and positive electrode) and charge generation mechanism. Meanwhile the electric field obeys Poisson’s equation. Method of Lines technique is used to solve the model numerically in which it converts the PDE into a system of ODEs by Finite Difference Approximations. The numerical simulation compares reasonably well with the experimental conduction current. The findings from the simulation shows that the conduction current is affected by the electric field distribution and charge concentration. The rise of the conduction current is due to the distribution of positive ion while the dominancy of electron attachment with neutral molecule and recombination with positive ions has caused a significant reduction of electron and increment of negative ions.

Effects of reduced internal electric field in InGaN/pseudo-AlInGaN multi-quantum-well on forward leakage current and photocurrent properties

2019 ◽  
Vol 126 (4) ◽  
pp. 045703 ◽  
Author(s):  
Byung-Guon Park ◽  
Reddeppa Maddaka ◽  
Thi Kim Phung Nguyen ◽  
Koteswara Rao Peta ◽  
Young-Kyun Noh ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Leakage Current ◽  
Internal Electric Field ◽  
Multi Quantum Well

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 881-886 ◽  
Author(s):  
Hiroyuki Okino ◽  
Norifumi Kameshiro ◽  
Kumiko Konishi ◽  
Naomi Inada ◽  
Kazuhiro Mochizuki ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Current ◽  
Tunneling Current ◽  
Leakage Currents ◽  
Reverse Leakage Current ◽  
Low Leakage ◽  
Chip Size ◽  
Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

scholarly journals Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors

2017 ◽  
Vol 24 (2) ◽  
pp. 255-264 ◽  
Author(s):  
Martin Kuparowitz ◽  
Vlasta Sedlakova ◽  
Lubomir Grmela
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Leakage Current ◽  
Niobium Oxide ◽  
Ion Concentration ◽  
Homogeneous Distribution ◽  
Insulating Layer ◽  
Ion Drift ◽  
Positive Ions ◽  
And Diffusion

AbstractHigh temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL) variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125°C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5. Here, the equilibrium between the ion drift and diffusion is achieved. The process of leakage current degradation is therefore partially reversible. When the external electric field is lowered, or the samples are shortened, the leakage current for a given voltage decreases with time and the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5, thus the ion redistribution by diffusion becomes dominant.

INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OF Pt/Bi0.975La0.025Fe0.975Ni0.025O3/Pt CAPACITOR MEASURED AT DIFFERENT TEMPERATURES

2014 ◽  
Vol 21 (02) ◽  
pp. 1450029 ◽  
Author(s):  
XIU HONG DAI ◽  
HONG DONG ZHAO ◽  
LEI ZHANG ◽  
HUI JUAN ZHU ◽  
XIAO HONG LI ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Applied Electric Field ◽  
Conduction Mechanism ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ohmic Behavior ◽  
Different Temperatures ◽  
Limited Conduction ◽  
Current Behavior

Polycrystalline Bi 0.975 La 0.025 Fe 0.975 Ni 0.025 O 3 (BLFNO) film is fabricated on Pt / Ti / SiO 2/ Si (111) substrate by sol–gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt / BLFNO / Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt / BLFNO / Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt / BLFNO / Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Impact of Sputter Deposition Parameters on the Leakage Current Behavior of Aluminum Nitride Thin Films

2012 ◽  
Vol 77 ◽  
pp. 29-34 ◽  
Author(s):  
Michael Schneider ◽  
Tobias Strunz ◽  
Achim Bittner ◽  
Ulrich Schmid
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Aluminum Nitride ◽  
Leakage Current ◽  
Microelectromechanical Systems ◽  
Constant Electric Field ◽  
Strong Negative Correlation ◽  
Axis Orientation ◽  
Sputter Deposited ◽  
Current Behavior

In microelectromechanical systems, piezoelectric aluminum nitride (AlN) thin films are commonly used as functional material for sensing and actuating purposes. This is due to excellent dielectric properties as well as a high chemical and thermal stability of AlN. In this work, we investigate the leakage current behavior (i.e. IV characteristic and charging behavior) of AlN thin films sputter deposited at varying plasma powers (300 W – 800 W) and deposition pressures (4 µbar – 8 µbar) up to an electric field of 0.5 MV/cm. First results show a Poole-Frenkel behavior for all samples with an increase in leakage current by orders of magnitude as the degree of c-axis orientation decreases. In addition, the discharging curves (i.e. meaning the current discharge after an applied constant electric field) agree well with the empirical Curie - von Schweidler Law (I(t) = I0 + I1t-n) and an increase of the parameter I1 with temperature is observed. I1 shows qualitatively the same behavior as the overall stored charge. Furthermore, the results show a strong negative correlation between the parameters n and the time constant τ1/2 (i.e. defined as the time after which half the stored charge has decayed), proofing that n is a good indicator for the decay time of the stored charge.

scholarly journals Ferroelectric and Electrical Properties Optimization of Mg-doped BiFeO3 Flexible Multiferroic Films

Symmetry ◽  
2020 ◽  
Vol 12 (7) ◽  
pp. 1173
Author(s):  
Der-Yuh Lin ◽  
Hone-Zern Chen ◽  
Ming-Cheng Kao ◽  
Pei-Li Zhang
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Storage Device ◽  
Bifeo3 Film ◽  
Device Applications ◽  
Multiferroic Films ◽  
Current Densities ◽  
Leakage Current Mechanism

Bi1-xMgxFeO3 (BMFO, x = 0, 0.02, 0.04, 0.06 and 0.08) multiferroic films were directly synthesized on flexible stainless steel (FSS), save the bottom electrode process, by means of sol–gel spin-coating technology. The effects of different bending conditions on ferroelectric, dielectric and leakage-current properties of BMFO films were investigated. The leakage-current densities of BiFeO3 (BFO, x = 0) and BMFO (x = 0.06) films were 5.86 × 10−4 and 3.73 × 10−7 A/cm2, which shows that the BMFO (x = 0.06) has more than three orders of magnitude lower than that of BFO film. The residual polarization (2 Pr) can be enhanced from 120 to 140 μC/cm2. The proper doping of Mg in BiFeO3 film could provide an effective method for reducing the leakage-current values as well as boosting the ferroelectric properties. In this study, the leakage-current mechanism of low electric field and high electric field of BMFO film is analyzed and established. In addition, the flexible BMFO film maintains practical ferroelectric and leakage-current properties at retention time of 106 s under different symmetry bending conditions. These results indicate that the BFMO film will be very practical in opto-electronic and storage device applications.

scholarly journals Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions

2019 ◽  
Vol 66 (3) ◽  
pp. 616-624 ◽  
Author(s):  
Alexandre Le Roch ◽  
Cedric Virmontois ◽  
Philippe Paillet ◽  
Jean-Marc Belloir ◽  
Serena Rizzolo ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Field Enhancement ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Electric Field Enhancement ◽  
Radiation Induced

scholarly journals Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5550
Author(s):  
Alexandre Le Roch ◽  
Vincent Goiffon ◽  
Olivier Marcelot ◽  
Philippe Paillet ◽  
Federico Pace ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Field Region ◽  
High Magnitude ◽  
Random Telegraph Signals ◽  
Tcad Simulations ◽  
Pinned Photodiode

The leakage current non-uniformity, as well as the leakage current random and discrete fluctuations sources, are investigated in pinned photodiode CMOS image sensor floating diffusions. Different bias configurations are studied to evaluate the electric field impacts on the FD leakage current. This study points out that high magnitude electric field regions could explain the high floating diffusion leakage current non-uniformity and its fluctuation with time called random telegraph signal. Experimental results are completed with TCAD simulations allowing us to further understand the role of the electric field in the FD leakage current and to locate a high magnitude electric field region in the overlap region between the floating diffusion implantation and the transfer gate spacer.

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