Compositional, Structural, Morphological, Optical and Electrical Property Evolutions in MOCVD Cu-Zn-S Thin Films Prepared at Different Temperatures Using a Single Solid Source Precursor

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

Download Full-text

Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽

10.3390/nano11071802 ◽

2021 ◽

Vol 11 (7) ◽

pp. 1802

Author(s):

Dan Liu ◽

Peng Shi ◽

Yantao Liu ◽

Yijun Zhang ◽

Bian Tian ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Annealing Temperature ◽

Rf Sputtering ◽

Maximum Size ◽

Cross Sectional ◽

Post Annealing ◽

Maximum Conductivity ◽

Different Temperatures ◽

Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Download Full-text

Domain structure and leakage mechanism of BiFeO3 thin films deposited at different temperatures

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-014-1973-4 ◽

2014 ◽

Vol 25 (7) ◽

pp. 2998-3002 ◽

Cited By ~ 1

Author(s):

Huiqin Li ◽

Jingsong Liu ◽

Qilong Liao ◽

Wanli Zhang ◽

Shuren Zhang

Keyword(s):

Thin Films ◽

Domain Structure ◽

Bifeo3 Thin Films ◽

Leakage Mechanism ◽

Different Temperatures

Download Full-text

Growth study of epitaxial FexZn1−xF2 thin films

Journal of Materials Research ◽

10.1557/jmr.2001.0244 ◽

2001 ◽

Vol 16 (6) ◽

pp. 1769-1775 ◽

Cited By ~ 6

Author(s):

J. McChesney ◽

M. Hetzer ◽

H. Shi ◽

T. Charlton ◽

D. Lederman

Keyword(s):

Thin Films ◽

Film Growth ◽

Magnetic Phase Diagram ◽

Epitaxial Thin Films ◽

X Ray Diffraction ◽

Growth Study ◽

Lattice Match ◽

Different Temperatures ◽

Bulk Single Crystals ◽

The Ideal

The FexZn1−xF2 alloy has been shown to be a model system for studying the magnetic phase diagram of dilute magnets. Whereas the growth of bulk single crystals with fixed Zn concentrations is difficult, the thin film growth is comparatively simpler and more flexible. To gain an understanding of the growth of FexZn1−xF2 films, a method was developed to grow smooth films at fixed concentrations. This was done by depositing a MgF2 buffer layer on MgF2(001) substrates and then depositing FeF2 and ZnF2 [001]-orientated epitaxial thin films at different temperatures. Surprisingly, the lattice spacing depends strongly on the growth temperature, for 44-nm-thick FeF2 films and 77-nm-thick ZnF2 films. This indicates a significant amount of stress, despite the close lattice match between the films and the MgF2 substrate. Thick alloy samples (approximately 500 nm thick) were grown by co-evaporation from the FeF2 and ZnF2 sources at the ideal temperature determined from the growth study, and their concentration was accurately determined using x-ray diffraction.

Download Full-text

CuxSbySz THIN FILMS PRODUCED BY ANNEALING CHEMICALLY DEPOSITED Sb2S3-CuS THIN FILMS

Modern Physics Letters B ◽

10.1142/s0217984901002257 ◽

2001 ◽

Vol 15 (17n19) ◽

pp. 667-670 ◽

Cited By ~ 17

Author(s):

Y. RODRÍGUEZ-LAZCANO ◽

M. T. S. NAIR ◽

P. K. NAIR

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Band Gap ◽

Deposition Method ◽

Photovoltaic Devices ◽

Large Area ◽

Electrical And Optical Properties ◽

Ternary Compounds ◽

Glass Substrates ◽

Different Temperatures

The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.

Download Full-text

Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽

10.3390/coatings11121435 ◽

2021 ◽

Vol 11 (12) ◽

pp. 1435

Author(s):

Kaneez Fatima ◽

Hadia Noor ◽

Adnan Ali ◽

Eduard Monakhov ◽

Muhammad Asghar

Keyword(s):

Thin Films ◽

Seebeck Coefficient ◽

Silicon Germanium ◽

Quartz Substrate ◽

Rf Magnetron Sputtering ◽

The Past ◽

High Power Factor ◽

Different Temperatures ◽

P Type ◽

Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

Download Full-text

Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽

10.3390/cryst11101183 ◽

2021 ◽

Vol 11 (10) ◽

pp. 1183

Author(s):

Peiyu Wang ◽

Xin Wang ◽

Fengyin Tan ◽

Ronghua Zhang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Deposition Rate ◽

Deposition Temperature ◽

Energy Dispersive Spectrometer ◽

Rf Magnetron Sputtering ◽

Glass Substrates ◽

Different Temperatures ◽

Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Download Full-text

Optical and Electrical Properties of Thin Films of CuS Nanodisks Ensembles Annealed in a Vacuum and Their Photocatalytic Activity

International Journal of Photoenergy ◽

10.1155/2013/178017 ◽

2013 ◽

Vol 2013 ◽

pp. 1-9 ◽

Cited By ~ 19

Author(s):

J. Santos Cruz ◽

S. A. Mayén Hernández ◽

F. Paraguay Delgado ◽

O. Zelaya Angel ◽

R. Castanedo Pérez ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Hydrogen Peroxide ◽

Photocatalytic Activity ◽

Electrical Properties ◽

Absolute Temperature ◽

Glass Substrates ◽

Transmission Electron ◽

Different Temperatures ◽

Blue Solution

Effects on the optical, electrical, and photocatalytic properties of undoped CuS thin films nanodisks vacuum annealed at different temperatures were investigated. The chemical bath prepared CuS thin films were obtained at 40°C on glass substrates. The grain size of13.5±3.5 nm was computed directly from high-resolution transmission electron microscopy (HRTEM) images. The electrical properties were measured by means of both Hall effect at room temperature and dark resistivity as a function of the absolute temperature 100–330 K. The activation energy values were calculated as 0.007, 0.013, and 0.013 eV for 100, 150, and 200°C, respectively. The energy band gap of the films varied in the range of 1.98 up to 2.34 eV. The photocatalytic activity of the CuS thin film was evaluated by employing the degradation of aqueous methylene blue solution in the presence of hydrogen peroxide. The CuS sample thin film annealed in vacuum at 150°C exhibited the highest photocatalytic activity in presence of hydrogen peroxide.

Download Full-text