scholarly journals Flexible and reconfigurable radio frequency electronics realized by high-throughput screen printing of vanadium dioxide switches

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Weiwei Li ◽  
Mohammad Vaseem ◽  
Shuai Yang ◽  
Atif Shamim
Keyword(s):  
High Throughput ◽  
Smart Materials ◽  
Vanadium Dioxide ◽  
Screen Printing ◽  
High Volume ◽  
Electrical Performance ◽  
Band Pass Filter ◽  
Large Area ◽  
Pass Filter ◽  
Electrical Stimuli

Abstract Smart materials that can change their properties based on an applied stimulus are in high demand due to their suitability for reconfigurable electronics, such as tunable filters or antennas. In particular, materials that undergo a metal–insulator transition (MIT), for example, vanadium dioxide (VO2) (M), are highly attractive due to their tunable electrical and optical properties at a low transition temperature of 68 °C. Although deposition of this material on a limited scale has been demonstrated through vacuum-based fabrication methods, its scalable application for large-area and high-volume processes is still challenging. Screen printing can be a viable option because of its high-throughput fabrication process on flexible substrates. In this work, we synthesize high-purity VO2 (M) microparticles and develop a screen-printable VO2 ink, enabling the large-area and high-resolution printing of VO2 switches on various substrates. The electrical properties of screen-printed VO2 switches at the microscale are thoroughly investigated under both thermal and electrical stimuli, and the switches exhibit a low ON resistance of 1.8 ohms and an ON/OFF ratio of more than 300. The electrical performance of the printed switches does not degrade even after multiple bending cycles and for bending radii as small as 1 mm. As a proof of concept, a fully printed and mechanically flexible band-pass filter is demonstrated that utilizes these printed switches as reconfigurable elements. Based on the ON and OFF conditions of the VO2 switches, the filter can reconfigure its operating frequency from 3.95 to 3.77 GHz without any degradation in performance during bending.

Achieving Ceramic-like RF Capacitor Requirements with Organic-based Materials

2010 ◽  
Vol 2010 (1) ◽  
pp. 000072-000075 ◽  
Author(s):  
Jin-Hyun Hwang ◽  
John Andresakis ◽  
Bob Carter ◽  
Yuji Kageyama ◽  
Fujio Kuwako
Keyword(s):  
Dielectric Constant ◽  
Form Factor ◽  
High Dielectric Constant ◽  
High Volume ◽  
Electrical Performance ◽  
Frequency Range ◽  
Large Area ◽  
Low Loss ◽  
Capacitance Variation ◽  
High Dielectric

New and novel organic-based composite materials for the use of embedded RF capacitors have been developed to address the important material issues by means of functional filler and resin chemistry. Combining different fillers with appropriate chemistries, the net composite can be made thermally stable while retaining the high dielectric constant and low loss. These composites attained dielectric constant of above 7 without compromising the quality factor in GHz frequency range. In addition, measurement of capacitance variation as a function of temperature (TCC) showed flatter TCC profile, resulting in TCC of ±30 ppm/°C over the temperature range −55°C to 125°C. It can be incorporated into organic chip package and, unlike ceramic-based LTCC they can utilize large area processing that is typical, and available in high volume manufacturing. This material is formulated for RF module designers to successfully implement embedded RF capacitors into their organic chip package designs and thus improve form factor, electrical performance and possibly reduce overall costs.

scholarly journals Ultra-Low Power and High-Throughput SRAM Design to Enhance AI Computing Ability in Autonomous Vehicles

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 256
Author(s):  
Youngbae Kim ◽  
Shreyash Patel ◽  
Heekyung Kim ◽  
Nandakishor Yadav ◽  
Kyuwon Ken Choi
Keyword(s):  
Integrated Circuits ◽  
Power Consumption ◽  
Low Power ◽  
High Throughput ◽  
Autonomous Vehicles ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Electrical Performance ◽  
Large Area ◽  
Ultra Low Power

Power consumption and data processing speed of integrated circuits (ICs) is an increasing concern in many emerging Artificial Intelligence (AI) applications, such as autonomous vehicles and Internet of Things (IoT). Existing state-of-the-art SRAM architectures for AI computing are highly accurate and can provide high throughput. However, these SRAMs have problems that they consume high power and occupy a large area to accommodate complex AI models. A carbon nanotube field-effect transistors (CNFET) device has been reported as a potential candidates for AI devices requiring ultra-low power and high-throughput due to their satisfactory carrier mobility and symmetrical, good subthreshold electrical performance. Based on the CNFET and FinFET device’s electrical performance, we propose novel ultra-low power and high-throughput 8T SRAMs to circumvent the power and the throughput issues in Artificial Intelligent (AI) computation for autonomous vehicles. We propose two types of novel 8T SRAMs, P-Latch N-Access (PLNA) 8T SRAM structure and single-ended (SE) 8T SRAM structure, and compare the performance with existing state-of-the-art 8T SRAM architectures in terms of power consumption and speed. In the SRAM circuits of the FinFET and CNFET, higher tube and fin numbers lead to higher operating speed. However, the large number of tubes and fins can lead to larger area and more power consumption. Therefore, we optimize the area by reducing the number of tubes and fins without compromising the memory circuit speed and power. Most importantly, the decoupled reading and writing of our new SRAMs cell offers better low-power operation due to the stacking of device in the reading part, as well as achieving better readability and writability, while offering read Static Noise Margin (SNM) free because of isolated reading path, writing path, and greater pull up ratio. In addition, the proposed 8T SRAMs show even better performance in delay and power when we combine them with the collaborated voltage sense amplifier and independent read component. The proposed PLNA 8T SRAM can save 96%, while the proposed SE 8T SRAM saves around 99% in writing power consumption compared with the existing state-of-the-art 8T SRAM in FinFET model, as well as 99% for writing operation in CNFET model.

Passive Device Integration from Silicon Technology

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001967-001989
Author(s):  
Kai Liu ◽  
YongTaek Lee ◽  
HyunTai Kim ◽  
Gwang Kim ◽  
Guruprasad Badakere ◽  
...  
Keyword(s):  
Substrate Material ◽  
Electrical Performance ◽  
Band Pass Filter ◽  
Passive Components ◽  
Pass Filter ◽  
Passive Device ◽  
High Q ◽  
Silicon Technology ◽  
On Chip ◽  
The Right

Passive components are indispensible parts used in electronics circuits for various functions, such decoupling, biasing, resonating, filtering, matching, transforming, etc. These passive components can be made on chips, or in PCBs, or in SMDs. SOC (system-on-chip) solutions where all passives are implemented may be long-term goals, but suffer high cost and long development cycle times at the time being. Making passive components embedded inside laminate substrates is limited on passive density. SMD solutions are by far the most popular approaches in the industry, and may still be dominant for some times. Passive components consume 70%–80% area of an electric package in a SiP solution, and therefore it is a great deal to reduce the area of passive components, in order to reduce the size of entire package. We have developed an IPD (integrated passive device) process from silicon technology to make these passive components of high-Q performance, preferably to be used in RF packages. Low-loss substrate material is used in this process, and thick Cu layer is used for high-Q inductors. From this process, we can make capacitors in 330pF/mm sq density, and the Q-factor is around 30–35 peak for a 3nH–5 nH inductor. Most importantly, the thin-film IPD process has better tolerance control than other commonly available ones, such as PCB and LTCC technologies, which may results in very repeatable electrical performance, and provides packages in high integration. For a passive function block, using BPF (band-pass-filter) as an example, an IPD filter is typically two times smaller in X-Y size and half thinner in Z-height. This makes such IPD very suitable to be integrated in a SiP package. Using some case studies (individual IPD and chip-scale-module-package), we will present how high integration can be achieved, and where are the right spots to use IPD approaches other than SAW, or SMD, or LTCC solutions for RF SiP applications.

Scanning Capacitance Microscopy: A Valuable Tool to Diagnose Current Paths in 3D-Capacitors Process

2011 ◽  
Author(s):  
Thomas Delaroque ◽  
Karine Danilo ◽  
Frédéric Voiron ◽  
Catherine Bunel ◽  
Bernadette Domengès ◽  
...  
Keyword(s):  
Reverse Current ◽  
Electrical Performance ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Scanning Capacitance Microscopy ◽  
Root Cause ◽  
Versatile Tool ◽  
Complete Failure ◽  
Band Pass ◽  
Application Requirements

Abstract Some process abnormalities can be very difficult to detect with conventional FA techniques. Scanning Capacitance Microscopy (SCM) has been shown to be a reliable and versatile tool and the case analysis presented in this work illustrates its significant role. In this paper, a 3D-PICS capacitor used as an element of a band pass filter of a cardiac detection chain was studied. As the electrical and physical diode current signature of this device did not satisfy the targeted needs, a complete failure analysis flow was performed, including OBIRCH and Scanning Capacitance Microscopy characterizations. SCM accumulated measurements allowed extracting and validating a trend according to electrical performance variations from the center to the edge of the wafer. As a result, the root cause of the level of this diode reverse current was identified and corrective actions could be introduced in the process to meet the application requirements.

scholarly journals Switchable Terahertz Band-Pass/Band-Stop Filter Enabled by Hybrid Vanadium Dioxide Metamaterial

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Ying Chen ◽  
Jianwei Cheng ◽  
Chaowu Liang
Keyword(s):  
Vanadium Dioxide ◽  
Surface Current ◽  
Center Frequency ◽  
Pass Band ◽  
Metallic State ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Band Stop Filter ◽  
Band Pass ◽  
Functional Components

To date, little research has been carried out on the integration of switchable and diversified functionalities into a single metamaterial in the terahertz (THz) range. Here, a hybrid vanadium dioxide (VO2) metamaterial was designed with switchable properties of band-pass filter and band-stop filter in the frequency range of 0.3–1.6 THz. Simulations demonstrated that under TE polarization, the proposed system acted as band-stop filter with the center frequency of 0.95 THz when VO2 is in the insulating state. Upon the transformation of VO2 into the metallic state, the proposed system behaved as a band-pass filter with a transmittance of >80%. The physical mechanism of the band-pass/band-stop conversion was examined by analyzing the surface current distribution of the designed device. The switchable characteristics of this structure can enable its wide application in tunable THz functional components such as amplitude modulators, polarization control, and intelligent switches.

scholarly journals Microstrip filters Based on Open Stubs and SIR for High Frequency and Ultra-Wideband Applications

2021 ◽  
Author(s):  
Ş. Taha İmeci ◽  
◽  
Bilal Tütüncü ◽  
Faruk Bešlija ◽  
Lamija Herceg ◽  
...  
Keyword(s):  
High Frequency ◽  
Dual Band ◽  
Electrical Performance ◽  
Pass Band ◽  
Band Pass Filter ◽  
Microstrip Filter ◽  
Pass Filter ◽  
Compact Size ◽  
Low Pass ◽  
Band Pass

This paper includes two new microstrip filter configurations for high frequency and Ultra-Wide Band applications. The first proposed filter is a composition of four parallel open-circuited stubs connected by optimized fractal-structured microstrip line. The filter response is a combination of three passing regions, namely low pass from 0.1 GHz to 3 GHz, band-pass from 4.5 GHz to 9 GHz and high pass from 10.5 GHz to 13 GHz, separated by two rejection regions from 3 GHz to 4.5 GHz and 9 GHz to 10.5 GHz. Deep and sharp rejection regions reaching up to -44.6 dB with 40 % fractional bandwidth (FBW) are observed with a good electrical performance. Furthermore, with a comparative table, the advantages of this proposed BSF in terms of FBW, compactness and insertion loss are compared with recently reported related studies. Secondly a dual-band band pass filter implementing a Stepped-Impedance resonator (SIR) and a modified H-shaped structure is presented. This filter is designed to operate in a low pass region up to 3.58 GHz and a band pass region from 15.38 to 21.65 GHz, with a wide stopband region between 4.46 and 14.07 GHz. The simulated and measured results are in good agreement. Compared to its peers, the compact size and low price allow for a wide application of these filter configurations, while passing frequencies allow operation in the unlicensed frequency spectrum, which is popular for high-speed communication. Keywords: Microstrip Filter, Band Pass, Band Stop, Open Stubs, SIR.

scholarly journals Intracellular Recording of Cardiomyocytes by Integrated Electrical Signal Recording and Electrical Pulse Regulating System

2021 ◽  
Vol 9 ◽  
Author(s):  
Zhengjie Liu ◽  
Dongxin Xu ◽  
Jiaru Fang ◽  
Qijian Xia ◽  
Wenxi Zhong ◽  
...  
Keyword(s):  
High Throughput ◽  
Intracellular Recording ◽  
Electrical Signal ◽  
Electrical Pulse ◽  
Driving Ability ◽  
Frequency Noise ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Electrical Signals ◽  
Signal Recording

The electrophysiological signal can reflect the basic activity of cardiomyocytes, which is often used to study the working mechanism of heart. Intracellular recording is a powerful technique for studying transmembrane potential, proving a favorable strategy for electrophysiological research. To obtain high-quality and high-throughput intracellular electrical signals, an integrated electrical signal recording and electrical pulse regulating system based on nanopatterned microelectrode array (NPMEA) is developed in this work. Due to the large impedance of the electrode, a high-input impedance preamplifier is required. The high-frequency noise of the circuit and the baseline drift of the sensor are suppressed by a band-pass filter. After amplifying the signal, the data acquisition card (DAQ) is used to collect the signal. Meanwhile, the DAQ is utilized to generate pulses, achieving the electroporation of cells by NPMEA. Each channel uses a voltage follower to improve the pulse driving ability and isolates each electrode. The corresponding recording control software based on LabVIEW is developed to control the DAQ to collect, display and record electrical signals, and generate pulses. This integrated system can achieve high-throughput detection of intracellular electrical signals and provide a reliable recording tool for cell electro-physiological investigation.

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