scholarly journals The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process

2019 ◽  
Vol 30 ◽  
pp. 10001
Author(s):  
Denis Sotskov ◽  
Alexander Kuznetsov ◽  
Nikolay Usachev ◽  
Vadim Elesin ◽  
Ilya Selishchev
Keyword(s):  
Radiation Effects ◽  
Noise Figure ◽  
Supply Voltage ◽  
Frequency Range ◽  
Microwave Amplifiers ◽  
Operating Frequency Range ◽  
Single Positive ◽  
Extended Frequency ◽  
Radiation Tolerant ◽  
Design And Testing

The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work. The amplifier with an operating frequency range from 0.1 GHz to 3.5 GHz, gain above 15 dB, noise figure below 2.2 dB, output linearity above 17 dBm is designed, produced and measured. The characteristic property of the amplifier is a single positive supply voltage and extended frequency range up to 100 MHz provided by the external capacitor circuit. Transient radiation effects in the amplifier are investigated up to the dose rate value of 4.9·109 a.u./s. The recovery time does not exceed 4 μs according to the experimental results.

A FULLY INTEGRATED MULTIBAND CMOS 0.35 μM LNA FOR IEEE802.16 STANDARD

2013 ◽  
Vol 22 (02) ◽  
pp. 1250088 ◽  
Author(s):  
MERIAM BEN AMOR ◽  
MOURAD LOULOU ◽  
SEBASTIEN QUINTANEL ◽  
DANIEL PASQUET
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Wide Band ◽  
Low Noise ◽  
Cmos Process ◽  
Frequency Range ◽  
Fully Integrated ◽  
Input Matching ◽  
Noise Amplifier ◽  
Chebyshev Filter

In this paper we present the design of a fully integrated low noise amplifier for WiMAX standard with AMS 0.35 μm CMOS process. This LNA is designed to cover the frequency range for licensed and unlicensed bands of the WiMAX 2.3–5.9 GHz. The proposed amplifier achieves a wide band input and output matching with S11 and S22 lower than -10 dB, a flat gain of 12 dB and a noise figure around 3.5 dB for the entire band and from the upper to the higher frequencies. The presented wide band LNA employs a Chebyshev filter for input matching and an inductive shunt feedback for output matching with a bias current of 15 mA and a supply voltage of 2.5 V.

The working standard of the unit of power of electromagnetic waves in the frequency range from 37,5 to 220 GHz

2020 ◽  
pp. 53-58
Author(s):  
A. V. Koudelny ◽  
I. M. Malay ◽  
V. A. Perepelkin ◽  
I. P. Chirkov
Keyword(s):  
Microwave Power ◽  
Electromagnetic Waves ◽  
Primary Standard ◽  
The State ◽  
Frequency Range ◽  
Working Standard ◽  
Extended Frequency Range ◽  
Effective Efficiency ◽  
Extended Frequency ◽  
Good Agreement

The possibility of using bolometric converters of microwave power from the State primary standard of the unit of power of electromagnetic waves in waveguide and coaxial paths GET 167-2017, which has a frequency range from 37,5 to 78,33 GHz, in an extended frequency range up to 220 GHz, is shown. Studies of semiconductor bolometric converters of microwave power in an extended frequency range have confirmed good agreement and smooth frequency characteristics of the effective efficiency factor of the converters. Based on the research results, the State working standard of the unit of power of electromagnetic waves of 0,1–10 mW in the frequency range from 37,5 to 220 GHz 3.1.ZZT.0288.2018 was approved. The technical characteristics of the working standard of the unit of power of electromagnetic oscillations in an extended frequency range from 37,5 to 220 GHz are given.

AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers

1993 ◽  
Vol 29 (15) ◽  
pp. 1324 ◽  
Author(s):  
L.E. Larson ◽  
M.M. Matloubian ◽  
J.J. Brown ◽  
A.S. Brown ◽  
M. Thompson ◽  
...  
Keyword(s):  
Low Power ◽  
High Power ◽  
Power Supply ◽  
Supply Voltage ◽  
Power Supply Voltage ◽  
Power Added Efficiency ◽  
Microwave Amplifiers

scholarly journals RF Transceiver for the Multi-Mode Radar Applications

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1563
Author(s):  
Jae Kwon Ha ◽  
Chang Kyun Noh ◽  
Jin Seop Lee ◽  
Ho Jin Kang ◽  
Yu Min Kim ◽  
...  
Keyword(s):  
Long Range ◽  
Integrated Circuit ◽  
Flicker Noise ◽  
Noise Figure ◽  
Supply Voltage ◽  
Doppler Frequency ◽  
Cmos Process ◽  
Rf Transceiver ◽  
Dc Offset ◽  
Multi Mode

In this work, a multi-mode radar transceiver supporting pulse, FMCW and CW modes was designed as an integrated circuit. The radars mainly detect the targets move by using the Doppler frequency which is significantly affected by flicker noise of the receiver from several Hz to several kHz. Due to this flicker noise, the long-range detection performance of the radars is greatly reduced, and the accuracy of range to the target and velocity is also deteriorated. Therefore, we propose a transmitter that suppresses LO leakage in consideration of long-range detection, target distance, velocity, and noise figure. We also propose a receiver structure that suppresses DC offset due to image signal and LO leakage. The design was conducted with TSMC 65 nm CMOS process, and the designed and fabricated circuit consumes a current of 265 mA at 1.2 V supply voltage. The proposed transmitter confirms the LO leakage suppression of 37 dB at 24 GHz. The proposed receiver improves the noise figure by about 20 dB at 100 Hz by applying a double conversion architecture and an image rejection, and it illustrates a DC rejection of 30 dB. Afterwards, the operation of the pulse, FMCW, and CW modes of the designed radar in integrated circuit was confirmed through experiment using a test PCB.

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

Design of 3.1-10.6GHz CMOS LNA Based on Input Matching Technique of Common-Gate Topology

2013 ◽  
Vol 479-480 ◽  
pp. 1014-1017
Author(s):  
Yi Cheng Chang ◽  
Meng Ting Hsu ◽  
Yu Chang Hsieh
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Average Power ◽  
Wide Band ◽  
Low Noise ◽  
Input Matching ◽  
Common Gate ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
Is Design

In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18μm TSMC CMOS technique. The LNA input and output return loss are both less than-10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about-9.5dBm. It consumes 11mW from a 1.0-V supply voltage.

scholarly journals A 1.5–40 GHz frequency modulated continuous wave radar receiver front-end

2021 ◽  
pp. 1-11
Author(s):  
Mantas Sakalas ◽  
Niko Joram ◽  
Frank Ellinger
Keyword(s):  
Continuous Wave ◽  
Noise Figure ◽  
Supply Voltage ◽  
Low Noise ◽  
Ultra Wideband ◽  
Front End ◽  
Wave Radar ◽  
Bicmos Technology ◽  
Circuit Components ◽  
High Band

Abstract This study presents an ultra-wideband receiver front-end, designed for a reconfigurable frequency modulated continuous wave radar in a 130 nm SiGe BiCMOS technology. A variety of innovative circuit components and design techniques were employed to achieve the ultra-wide bandwidth, low noise figure (NF), good linearity, and circuit ruggedness to high input power levels. The designed front-end is capable of achieving 1.5–40 GHz bandwidth, 30 dB conversion gain, a double sideband NF of 6–10.7 dB, input return loss better than 7.5 dB and an input referred 1 dB compression point of −23 dBm. The front-end withstands continuous wave power levels of at least 25 and 20 dBm at low band and high band inputs respectively. At 3 V supply voltage, the DC power consumption amounts to 302 mW when the low band is active and 352 mW for the high band case, whereas the total IC size is $3.08\, {\rm nm{^2}}$ .

FORMATION OF A SCANNING ANTENNA BASED ON A HALF-WAVE DIPOLE

2021 ◽  
pp. 20-24
Author(s):  
С.М. Фёдоров ◽  
Е.А. Ищенко ◽  
И.А. Баранников ◽  
К.А. Бердников ◽  
В.В. Кузнецова
Keyword(s):  
Short Distance ◽  
Electromagnetic Waves ◽  
High Stability ◽  
Frequency Range ◽  
Current Position ◽  
Form Complex ◽  
Operating Frequency Range ◽  
Half Wave ◽  
Focus Radiation ◽  
Antenna Systems

Рассматривается полуволновый диполь с установленным рефлектором, который позволяет производить сканирование пространства с использованием вращения рефлектора вокруг диполя. Для полученной конструкции производилось моделирование основных параметров, которые показали высокую стабильность при различных положениях рефлектора, постоянное значение коэффициента направленного действия, ширины главного лепестка. Изменение направления излучения совпадает с текущим положением рефлектора. По сравнению с ситуацией, когда у антенны отсутствовал рефлектор, КНД антенны увеличился, так как произошла фокусировка электромагнитных волн. Коэффициент полезного действия и передне-заднее отношение сохраняют высокие значения во всем диапазоне рабочих частот. Применение предложенной конструкции позволяет упростить конструкцию сканирующих антенн, так как для ее реализации требуются лишь полуволновой диполь и плоский рефлектор, установленный на малом расстоянии от источника излучения. В процессе управления характеристиками требуется вращать рефлектор вокруг диполя, при этом диполь остается неподвижным, что позволяет повысить эффективность предложенной конструкции, так как не требуется формировать сложных антенных систем или устанавливать комбинацию из нескольких антенн для фокусировки излучения в одном направлении от источника The article discusses a half-wave dipole with an installed reflector, which allows scanning space using the rotation of the reflector around the dipole. For the resulting structure, we simulated the main parameters, which showed high stability at various positions of the reflector, a constant value of the directivity factor, and the width of the main lobe. The change in the direction of radiation coincides with the current position of the reflector. Compared to the situation when the antenna did not have a reflector, the directivity of the antenna increased since the focusing of electromagnetic waves took place. The efficiency and the front-to-back ratio remain high throughout the entire operating frequency range. The use of the proposed design makes it possible to simplify the design of scanning antennas since the implementation of the proposed design requires only a half-wave dipole and a flat reflector installed at a short distance from the radiation source. In the process of controlling the characteristics, it is required to rotate the reflector around the dipole, while the dipole remains stationary, which makes it possible to increase the efficiency of the proposed design, since it is not required to form complex antenna systems or install a combination of several antennas to focus radiation in one direction from the source

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