BENCHMARK RESULTS FOR HIGH-SPEED 4-BIT ACCUMULATORS IMPLEMENTED IN INDIUM PHOSPHIDE DHBT TECHNOLOGY

2004 ◽  
Vol 14 (03) ◽  
pp. 646-651 ◽  
Author(s):  
STEVEN EUGENE TURNER ◽  
DAVID E. KOTECKI
Keyword(s):  
Indium Phosphide ◽  
Power Consumption ◽  
High Speed ◽  
Large Scale ◽  
Supply Voltage ◽  
Power Reduction ◽  
Test Results ◽  
Clock Frequency ◽  
Speed Performance ◽  
Simulation Results

High-speed accumulators are frequently used as a benchmark of the high-speed performance and ability to yield large scale circuits in InP double hetereojunction bipolar (DHBT) processes. In previous work, we reported test results of an InP DHBT 4-bit accumulator with 624 transistors operating at 41 GHz clock frequency with a power consumption of 4.1W. In this work, we report on modifications that allow the circuit to operate at a lower supply voltage and a corresponding lower power consumption. Simulation results for this modification indicate that a 16% power reduction can be obtained, while maintaining a high-speed operating frequency of 40 GHz.

A Novel CNFET Technology Based 3 Bit Flash ADC for Low-Voltage High Speed SoC Application

2015 ◽  
Vol 19 ◽  
pp. 19-36 ◽  
Author(s):  
P.A. Gowri Sankar ◽  
G. Sathiyabama
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Circuit Design ◽  
Field Effect ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Flash Adc ◽  
Simulation Results

The continuous scaling down of metal-oxide-semiconductor field effect transistors (MOSFETs) led to the considerable impact in the analog-digital mixed signal integrated circuit design for system-on-chips (SoCs) application. SoCs trends force ADCs to be integrated on the chip with other digital circuits. These trends present new challenges in ADC circuit design based on existing CMOS technology. In this paper, we have designed and analyzed a 3-bit high speed, low-voltage and low-power flash ADC at 32nm CNFET technology for SoC applications. The proposed ADC utilizes the Threshold Inverter Quantization (TIQ) technique that uses two cascaded carbon nanotube field effect transistor (CNFET) inverters as a comparator. The TIQ technique proposed has been developed for better implementation in SoC applications. The performance of the proposed ADC is studied using two different types of encoders such as ROM and Fat tree encoders. The proposed ADCs circuits are simulated using Synopsys HSPICE with standard 32nm CNFET model at 0.9 input supply voltage. The simulation results show that the proposed 3 bit TIQ technique based flash ADC with fat tree encoder operates up to 8 giga samples per second (GSPS) with 35.88µW power consumption. From the simulation results, we observed that the proposed TIQ flash ADC achieves high speed, small size, low power consumption, and low voltage operation compared to other low power CMOS technology based flash ADCs. The proposed method is sensitive to process, temperature and power supply voltage variations and their impact on the ADC performance is also investigated.

scholarly journals A Novel Cross-Latch Shift Register Scheme for Low Power Applications

2020 ◽  
Vol 11 (1) ◽  
pp. 129
Author(s):  
Po-Yu Kuo ◽  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Jin-Fa Lin
Keyword(s):  
Power Consumption ◽  
Supply Voltage ◽  
Electrical Power ◽  
Average Power ◽  
Leakage Power ◽  
Shift Register ◽  
Cmos Process ◽  
Average Power Consumption ◽  
Simulation Results ◽  
Layout Area

The conventional shift register consists of master and slave (MS) latches with each latch receiving the data from the previous stage. Therefore, the same data are stored in two latches separately. It leads to consuming more electrical power and occupying more layout area, which is not satisfactory to most circuit designers. To solve this issue, a novel cross-latch shift register (CLSR) scheme is proposed. It significantly reduced the number of transistors needed for a 256-bit shifter register by 48.33% as compared with the conventional MS latch design. To further verify its functions, this CLSR was implemented by using TSMC 40 nm CMOS process standard technology. The simulation results reveal that the proposed CLSR reduced the average power consumption by 36%, cut the leakage power by 60.53%, and eliminated layout area by 34.76% at a supply voltage of 0.9 V with an operating frequency of 250 MHz, as compared with the MS latch.

A LOW-POWER AND HIGH-SPEED D FLIP-FLOP USING A SINGLE LATCH

2002 ◽  
Vol 11 (01) ◽  
pp. 51-55
Author(s):  
ROBERT C. CHANG ◽  
L.-C. HSU ◽  
M.-C. SUN
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
Operating Frequency ◽  
Flip Flop ◽  
Lower Power ◽  
Simulation Results ◽  
Hspice Simulation

A novel low-power and high-speed D flip-flop is presented in this letter. The flip-flop consists of a single low-power latch, which is controlled by a positive narrow pulse. Hence, fewer transistors are used and lower power consumption is achieved. HSPICE simulation results show that power dissipation of the proposed D flip-flop has been reduced up to 76%. The operating frequency of the flip-flop is also greatly increased.

scholarly journals A Novel Highly Linear Voltage-To-Time Converter (VTC) Circuit for Time-Based Analog-To-Digital Converters (ADC) Using Body Biasing

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2033
Author(s):  
Ahmed Elgreatly ◽  
Ahmed Dessouki ◽  
Hassan Mostafa ◽  
Rania Abdalla ◽  
El-sayed El-Rabaie
Keyword(s):  
Power Consumption ◽  
Software Defined Radio ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Cmos Technology ◽  
The Body ◽  
Analog To Digital Converters ◽  
Clock Frequency ◽  
Analog To Digital ◽  
Operation Speed

Time-based analog-to-digital converter is considered a crucial part in the design of software-defined radio receivers for its higher performance than other analog-to-digital converters in terms of operation speed, input dynamic range and power consumption. In this paper, two novel voltage-to-time converters are proposed at which the input voltage signal is connected to the body terminal of the starving transistor rather than its gate terminal. These novel converters exhibit better linearity, which is analytically proven in this paper. The maximum linearity error is reduced to 0.4%. In addition, the input dynamic range of these converters is increased to 800 mV for a supply voltage of 1.2 V by using industrial hardware-calibrated TSMC 65 nm CMOS technology. These novel designs consist of only a single inverter stage, which results in reducing the layout area and the power consumption. The overall power consumption is 18 μW for the first proposed circuit and 15 μW for the second proposed circuit. The novel converter circuits have a resolution of 5 bits and operate at a maximum clock frequency of 500 MHz.

A High Speed 8B/10B Encoder/Decoder Design Based on Low Cost FPGA

2012 ◽  
Vol 462 ◽  
pp. 361-367 ◽  
Author(s):  
Zhang Jin Chen ◽  
Guo Hai Zhong ◽  
Zhuo Bi
Keyword(s):  
High Speed ◽  
Single Channel ◽  
Low Cost ◽  
Maximum Frequency ◽  
Clock Frequency ◽  
Parallel Pipeline ◽  
Quartus Ii ◽  
Simulation Results ◽  
Decoder Design ◽  
Timing Simulation

A high speed 8B/10B Encoder/Decoder is presented in this paper. The Encoder/Decoder is based on Altera’s low cost FPGA Cyclone family. The Encoder/Decoder includes parallel pipeline structure. The Encoder/Decoder is applied to the Serializer/Deserializer (SERDES) of high-speed serial bus. The Encoder/Decoder is synthesized and simulated by Quartus II 9.1. The synthesis and analysis results show the maximum frequency is more than 359MHz. The timing simulation results show the clock frequency is more than 125 MHz. The single channel data rate of serial bus can get to 1.25Gbps. The proposed Encoder/Decoder can meet the requirements of most high-speed serial bus.

DESIGN LOW VOLTAGE CURRENT MIRROR AT 32NM REGIME

2017 ◽  
Vol 5 (1) ◽  
pp. 16
Author(s):  
Avinash Sukadeo Pawar
Keyword(s):  
Power Supply ◽  
High Speed ◽  
High Stability ◽  
Low Voltage ◽  
Current Mirror ◽  
Lower Power ◽  
Speed Performance ◽  
Accurate Performance ◽  
Simulation Results ◽  
Lower Voltage

As the technology moving towards lower voltage for high stability and accurate performance. We design low voltage current mirror using IGFET, FDSOI, CNTFET.These transistor moving towards low-voltage high-speed performance. Here in this paper, we have design low voltage current mirror for Accurate duplication of current. To obtain accurate duplication of current we verify the performance of low voltage current mirror on FDSOI and CNTFET Transistor having 32nm technology.The circuit is simulated with 32nm technology for FDSOI and CNFET. They operate at lower power supply than IGFET. The simulation results show the improvement in knee voltage 1.7v and 1.3v for the current mirror.

High-Speed Performance Evaluation of a Large-Scale Shared-Bus Digital System

2015 ◽  
Vol 98 (10) ◽  
pp. 57-66 ◽  
Author(s):  
MASAFUMI KONDO ◽  
TOMOYUKI YOKOGAWA ◽  
YOICHIRO SATO ◽  
KAZUTAMI ARIMOTO
Keyword(s):  
Performance Evaluation ◽  
High Speed ◽  
Large Scale ◽  
Digital System ◽  
Speed Performance ◽  
Shared Bus

High Speed Min/Max Architecture Based on a Novel Comparator in 0.18-μm CMOS Process

2015 ◽  
Vol 24 (04) ◽  
pp. 1550048 ◽  
Author(s):  
Amir Fathi ◽  
Abdollah Khoei ◽  
Khayrollah Hadidi
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Current Mode ◽  
Cmos Technology ◽  
Operating Frequency ◽  
Cmos Process ◽  
Fuzzy Logic Controllers ◽  
Speed Performance ◽  
External Clock ◽  
Frequency Feature

This paper describes the design of a high speed min/max architecture based on a new current comparator. The main advantage of the proposed circuit which employs a novel preamplifier-latch comparator is the higher operating frequency feature in comparison with previous works. Because the comparator can work in voltage mode, the min/max structure can be redesigned either in voltage or current mode. The designed comparator is refreshed without any external clock. Therefore, it does not degrade the speed performance of proposed min/max structure. These features along with low power consumption qualify the proposed architecture to be widely used in high speed fuzzy logic controllers (FLCs). Post-layout simulation results confirm 3.4 GS/s comparison rate with 9-bit resolution for a 0.9 V peak-to-peak input signal range for the comparator and 800 MHz operating frequency for min/max circuit. The power consumption of whole structure is 912 μW from a 1.8 V power supply using TSMC 0.18-μm CMOS technology.

scholarly journals IMPLEMENTATION OF HIGH SPEED-LOW POWER TRUNCATION ERROR TOLERANT ADDER

2015 ◽  
pp. 239-244
Author(s):  
SYAM KUMAR NAGENDLA ◽  
K. MIRANJI
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Critical Path ◽  
Processing System ◽  
Digital Signal ◽  
Signal Processing System ◽  
Speed Performance ◽  
Power Delay Product ◽  
Dsp Systems

Now a Days in modern VLSI technology different kinds of errors are invitable. A new type of adder i.e. error tolerant adder(ETA) is proposed to tolerate those errors and to attain low power consumption and high speed performance in DSP systems. In conventional adder circuit, delay is mainly certified to the carry propagation chain along the critical path, from the LSB to MSB. If the carry propagation can be eliminated by the technique proposed in this paper, a great improvement in speed performance and power consumption is achieved. By operating shifting and addition in parallel, the error tolerant adder tree compensates for the truncation errors. To prove the feasibility of the ETA, normal addition operation present in the DFT or DCT algorithm is replaced by the proposed addition arithmetic and the experimental results are shown. In this paper we propose error tolerant Adder (ETA). In the view of DSP applications the ETA is able to case the strict restriction on accuracy, speed performance and power consumption when compared to the conventional Adders, the proposed one provides 76% improvement in power-delay product such a ETA plays a key role in digital signal processing system that can tolerate certain amount of errors.

A New Technique for Designing Low-Power High-Speed Domino Logic Circuits in FinFET Technology

2019 ◽  
Vol 28 (10) ◽  
pp. 1950165 ◽  
Author(s):  
Sandeep Garg ◽  
Tarun K. Gupta
Keyword(s):  
Low Power ◽  
High Speed ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Power Reduction ◽  
Maximum Power ◽  
Oxide Semiconductor ◽  
Domino Logic ◽  
Maximum Delay

In this paper, a fin field-effect transistor (FinFET)-based domino technique dynamic node-driven feedback transistor domino logic (DNDFTDL) is designed for low-power, high-speed and improved noise performance. In the proposed domino technique, the concept of current division is explored below the evaluation network for enhancement of performance parameters. Simulations are carried out for 32-nm complementary metal–oxide–semiconductor (CMOS) and FinFET node using HSPICE for 2-, 4-, 8- and 16-input OR gates with a DC supply voltage of 0.9[Formula: see text]V. Proposed technique shows a maximum power reduction of 73.93% in FinFET short-gate (SG) mode as compared to conditional stacked keeper domino logic (CSKDL) technique and a maximum power reduction of 72.12% as compared to modified high-speed clocked delay domino logic (M-HSCD) technique in FinFET low-power (LP) mode. The proposed technique shows a maximum delay reduction of 35.52% as compared to voltage comparison domino (VCD) technique in SG mode and a reduction of 25.01% as compared to current mirror footed domino logic (CMFD) technique in LP mode. The unity noise gain (UNG) of the proposed circuit is 1.72–[Formula: see text] higher compared to different existing techniques in FinFET SG mode and is 1.42–[Formula: see text] higher in FinFET LP mode. The Figure of Merit (FOM) of the proposed circuit is up to [Formula: see text] higher as compared to existing domino logic techniques because of lower values of power, delay and area and higher values of UNG of the proposed circuit. In addition, the proposed technique shows a maximum power reduction of up to 68.64% in FinFET technology as compared to its counterpart in CMOS technology.

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