Simulators of Thin Film Deposition for Silicon Device Processing

1998 ◽  
Vol 514 ◽  
Author(s):  
G. H. Gilmer ◽  
F. H. Baumann ◽  
T. Diaz de la Rubia
Keyword(s):  
First Principles ◽  
Film Formation ◽  
Level Set Methods ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Tin Films ◽  
Grain Structures ◽  
Device Processing ◽  
Wide Range ◽  
Silicon Device

ABSTRACTWe discuss simulators of the deposition of metal films onto substrates containing vias and trenches. Our Monte Carlo simulations of Al are based on extensive first-principles and molecular dynamics (MD) data for atomic-level energetics and transport rates. We find that surface mobilities are highly anisotropic, and that this has a pronounced influence on film morphology. We have investigated the effects of faceting and grain boundary grooving on step coverage, together with the variation of morphology with deposition rate, temperature, and length scale. Mass transport across low index facets is extremely slow near equilibrium, and this can inhibit the smoothening of surfaces and the elimination of depressions during annealing. The MC model also predicts grain structures during polycrystalline film formation, and the generation of preferred crystallographic orientations (texture). We present MC simulations for a range of conditions, and provide comparisons with experiments on the sputter deposition of Al and TiN films. Results from the MC model are being incorporated into a continuum model based on level-set methods, and we expect that this will form the basis for a simulator that can efficiently explore a wide range of conditions.

scholarly journals Progresses on the Use of Two-Photon Absorption Laser Induced Fluorescence (TALIF) Diagnostics for Measuring Absolute Atomic Densities in Plasmas and Flames

Plasma ◽  
2021 ◽  
Vol 4 (1) ◽  
pp. 145-171
Author(s):  
Kristaq Gazeli ◽  
Guillaume Lombardi ◽  
Xavier Aubert ◽  
Corinne Y. Duluard ◽  
Swaminathan Prasanna ◽  
...  
Keyword(s):  
Optical Transition ◽  
Thin Film Deposition ◽  
Laser Induced Fluorescence ◽  
Film Deposition ◽  
Stimulated Emission ◽  
Photon Absorption ◽  
Collisional Quenching ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Wide Range

Recent developments in plasma science and technology have opened new areas of research both for fundamental purposes (e.g., description of key physical phenomena involved in laboratory plasmas) and novel applications (material synthesis, microelectronics, thin film deposition, biomedicine, environment, flow control, to name a few). With the increasing availability of advanced optical diagnostics (fast framing imaging, gas flow visualization, emission/absorption spectroscopy, etc.), a better understanding of the physicochemical processes taking place in different electrical discharges has been achieved. In this direction, the implementation of fast (ns) and ultrafast (ps and fs) lasers has been essential for the precise determination of the electron density and temperature, the axial and radial gradients of electric fields, the gas temperature, and the absolute density of ground-state reactive atoms and molecules in non-equilibrium plasmas. For those species, the use of laser-based spectroscopy has led to their in situ quantification with high temporal and spatial resolution, with excellent sensitivity. The present review is dedicated to the advances of two-photon absorption laser induced fluorescence (TALIF) techniques for the measurement of reactive species densities (particularly atoms such as N, H and O) in a wide range of pressures in plasmas and flames. The requirements for the appropriate implementation of TALIF techniques as well as their fundamental principles are presented based on representative published works. The limitations on the density determination imposed by different factors are also discussed. These may refer to the increasing pressure of the probed medium (leading to a significant collisional quenching of excited states), and other issues originating in the high instantaneous power density of the lasers used (such as photodissociation, amplified stimulated emission, and photoionization, resulting to the saturation of the optical transition of interest).

Radio frequency expanding plasmas at low, intermediate, and atmospheric pressure and their applications

2008 ◽  
Vol 80 (9) ◽  
pp. 1919-1930 ◽  
Author(s):  
Gheorghe Dinescu ◽  
Eusebiu R. Ionita
Keyword(s):  
Radio Frequency ◽  
Atmospheric Pressure ◽  
Thin Film Deposition ◽  
Plasma Jets ◽  
Film Deposition ◽  
High Mass ◽  
Rf Plasma ◽  
Temperature Sensitive ◽  
Large Size ◽  
Wide Range

We report on the operation and characteristics of radio frequency (RF) plasma beam sources based on the expansion of the discharge outside of limited spaces with small interelectrode gaps. The appropriate electrode configuration, combined with high mass flow values and appropriate power levels, leads to small- or large-size plasma jets, working stably at low, intermediate, and atmospheric pressures. The sources are promising tools for a wide range of applications in thin film deposition, surface modification, and cleaning, including the case of temperature-sensitive substrates.

Fabrication of Periodic Arrays of Nanoscale Square Helices

2002 ◽  
Vol 728 ◽  
Author(s):  
Martin O. Jensen ◽  
Scott R. Kennedy ◽  
Michael J. Brett
Keyword(s):  
Photonic Band Gap ◽  
Substrate Surface ◽  
Three Dimensional ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Inorganic Materials ◽  
Periodic Arrays ◽  
Wide Range ◽  
Potential Applications ◽  
Third Dimension

AbstractWe demonstrate fabrication of periodic arrays of nanometre scale square helices, with potential applications in three-dimensional photonic bandgap (PBG) materials. Processing is performed using a thin film deposition method known as Glancing Angle Deposition (GLAD). Through advanced substrate motion, this technique allows for controlled growth of square helices in a variety of inorganic materials. Organization of the helices into periodic twodimensional geometries is achieved by prepatterning the substrate surface using electron beam lithography. The regular turns of the helices yield periodicity in the third dimension, perpendicular to the substrate. We present studies of tetragonal and trigonal arrays of silicon helices, with lattice constants as low as 300 nm. By deliberately adding or leaving out seeds in the substrate pattern, we have succeeded in engineering line defects. Our periodic nanoscale structure closely matches an ideal photonic band gap architecture, as recently proposed by Toader and John. While our fabrication technique is simpler than most suggested PBG schemes, it is highly versatile. A wide range of materials can be used for GLAD, manipulation of lattice constant and helix pitch ensures optical tunability, and the GLAD films are robust to micromachining.

Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

1999 ◽  
Vol 573 ◽  
Author(s):  
J. Etrillard ◽  
H. Maher ◽  
M. Medjdoub ◽  
J. L. Courant ◽  
Y. I. Nissim
Keyword(s):  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Point Of View ◽  
Etch Depth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Inductively Coupled ◽  
Device Processing

ABSTRACTThe use of a low ion energy of an extremely dense plasma has been studied as a dry etching as well as a thin film deposition tool (same source, two different reactors) for InP and GaAs device processing. Under these working conditions it is expected to control well the etch depth or in the case of deposition to obtain high deposition rates. In all cases minimun ion damages are induced on the processed substrate. Both technologies are presented here from the point of view of material analysis as well as device processing demonstration. For etching, the gate recess of an InP-based HEMT has been addressed as one of the key technological step that requires such properties for good device performances. InGaAs/InAlAs HEMT like structures have been grown and the recess of the InGaAs layer has been conducted with a 13eV SiCl4 inductively coupled plasma (ICP). DLTS and AFM measurements made on the exposed AlinAs surface after InGaAs removal indicate that device quality on its electrical and structural properties are achieved. Passivation of fully processed HEMT devices with a ICP enhanced chemical vapor deposition (ICPECVD) silicon nitride film is being studied.

Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing

MRS Bulletin ◽  
2001 ◽  
Vol 26 (3) ◽  
pp. 182-189 ◽  
Author(s):  
F.H. Baumann ◽  
D.L. Chopp ◽  
T. Díaz de la Rubia ◽  
G.H. Gilmer ◽  
J.E. Greene ◽  
...  
Keyword(s):  
Multiscale Modeling ◽  
Integrated Circuit ◽  
Random Access ◽  
Random Access Memory ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Device Processing ◽  
Electrical Connections

Metallization is the back end of the integrated-circuit (IC) fabrication process where the transistor interconnections are formed. Figure 1 shows the metallized part of a static random-access memory chip. Metal lines for electrical connections (Al and Cu) in Si devices are deposited as blanket films and then etched or polished away to define the conducting lines.

Microanalytical Characterization of Structure and Defects for the Development of Low Temperature Silicon Epitaxial Growth

1999 ◽  
Vol 5 (S2) ◽  
pp. 750-751
Author(s):  
K.M. Jones ◽  
J. Thiesen
Keyword(s):  
Low Temperature ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cross Sectional ◽  
Buried Channel ◽  
Device Processing ◽  
Current Production ◽  
New Processing ◽  
Si Epitaxy

The nano-scale dimensions of next generation VLSI and ULSI devices will drive the development of a variety of new processing requirements. Currently device processing conditions from substrate cleaning to thin film deposition require temperatures in the range of 600°C to 1200°C. In order to realize a Si device circuit architecture which integrates Si/Ge structures or the needed super abrupt junctions of buried channel CMOS, low temperature processes must replace those in current production lines. For these processes to be successfully developed and implemented, proper characterization techniques must be used. In the case of epitaxy, cross-sectional TEM is the tool of choice. We will discuss the prominent role that TEM has played in the development of a new Si epitaxy technology. Recently, at the National Renewable Energy Laboratory (NREL), we have shown low temperature, 195°C to 400°C, Si epitaxy via hot-wire chemical vapor deposition- HWCVD. In the past HWCVD has been used to produce amorphous, micro-crystalline, and polycrystalline Si thin films.

Thin Coating Deposition by Magnetron Sputtering

2018 ◽  
pp. 403-428 ◽  
Author(s):  
Peter Ifeolu Odetola ◽  
Patricia A. P. Popoola ◽  
Philip Oladijo
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Film Formation ◽  
Semiconductor Industry ◽  
Target Material ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
High Energy ◽  
Film Deposition ◽  
Atomic Scale

Advances in thin-film deposition expose new frontiers to structures and phases that are inaccessible by conventional chemical means and have led to innovative modification of existing materials' properties. Thin-film deposition by magnetron sputtering is highly dependent on ion bombardments; coupled with sublimation of solid target unto the substrate through momentum transfer. It is summarily base on phase change of target material under high-energy influence; corresponding controlled condensation of sputtered atoms on substrate material during which process parameters and growth conditions dictate the pace of the atomic scale processes for thin-film formation. Magnetron sputtering is a state-of-the-art thin film deposition technique versatile for several unique applications, especially in the semiconductor industry. Magnetron sputtering is very novel in its use to achieve low-pressure condition that maximizes and conserve stream of electrons for effective knocking of inert atoms into ions. This ensures the high-energy acquired is not dissipated in gas-phase collisions.

scholarly journals Special Issue: Current Research in Thin Film Deposition: Applications, Theory, Processing, and Characterisation

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1228
Author(s):  
Ross Birney
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Special Issue ◽  
Wide Range

Today, thin films are near-ubiquitous and are utilised in a very wide range of industrially and scientifically important areas [...]

Investigations of Tin and Ti Film Deposition by Plasma Activated Cvd Using Cyclopentadienyl Cycloheptatrienyl Titanium, a Low Oxidation State Precursor

1993 ◽  
Vol 334 ◽  
Author(s):  
Robert M. Charatan ◽  
Mihal E. Gross ◽  
David J. Eaglesham
Keyword(s):  
Oxidation State ◽  
Integrated Circuit ◽  
Film Formation ◽  
Effective Diffusion ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Tin Film ◽  
Average Grain Size ◽  
Plasma Excitation ◽  
Lower Oxidation

AbstractSequential Ti and TiN thin film deposition by CVD is highly desirable for advanced Si integrated circuit applications. To date, most CVD TiN work has been performed using Ti(IV) compounds. We have investigated plasma assisted CVD using a lower oxidation state precursor, cyclopentadienyl cycloheptatrienyl titanium, (C5H5)Ti(C7H7) (CPCHT), which might provide a more facile pathway to both Ti and TiN film formation. CPCHT was introduced with H2 carrier gas into the downstream region of an NH3, N2 or H2 plasma. Low resistivity (100-250 μΩ-cm), nitrogen rich TiN films with little C or O incorporation were deposited at 300 to 600°C, inclusive with either activated N2 or NH3. Although the film texture was influenced by the chosen plasma gas, the average grain size of the N2 and NH3 plasma deposits was similar. Annealing studies showed that the CVD TiN was an effective diffusion barrier between aluminum and silicon to at least 575°C. TEM micrographs revealed that, in contrast to many CVD metal films, the growth of this TiN was not columnar. Film conformality was investigated by scanning electron microscopy (SEM). Experiments performed with activated H2 resulted in deposits of Ti contaminated with C. No depositions were observed in the absence of plasma excitation.

Ordered Layered Assemblies of Nanoparticles

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 992-997 ◽  
Author(s):  
Nicholas A. Kotov
Keyword(s):  
Thin Films ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Inorganic Nanoparticles ◽  
Advanced Materials ◽  
Layer By Layer ◽  
Magnetic Devices ◽  
Lbl Assembly ◽  
Wide Range ◽  
Spatial Dimensions

The development of advanced materials from inorganic nanoparticles (NPs) is currently one of the most dynamic areas of science. NPs are attracting significant fundamental and commercial interest, with a wide range of applications including the next generation of optics, electronics, and sensors. In optical, electrical, and magnetic devices, NPs will be mostly used in the form of thin films. Currently, such films are typically made by the spincoating, spraying, or sometimes simple painting of nanoparticle–matrix mixtures. Layer-by-layer (LBL) assembly is one of the new methods of thin-film deposition, often realized as sequentially adsorbed (mono)layers of oppositely charged polyelectrolytes. LBL assembly has also been successfully applied to thin films of NPs and nanocolloids, that is, dispersed species with only one or two spatial dimensions in the nanoscale regime.

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