Effect Of RTA On TiN Films As The Barrier Layer for Pt/BST/Pt Capacitors Prepared By RF Magnetron Co-sputter Technique At Low Substrate Temperature

2001 ◽  
Vol 672 ◽  
Author(s):  
Miin-Horng Juang ◽  
Chuan-Chou Hwang ◽  
Huang-Chung Cheng
Keyword(s):  
Substrate Temperature ◽  
Bottom Electrode ◽  
Life Time ◽  
Electrical Characteristics ◽  
Adhesion Layer ◽  
Thermal Budget ◽  
Tin Films ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High Dielectric

ABSTRACTEffect of rapid-thermal-annealing on metallic barrier TiN against the interdiffusions of Ti and Si into BST in Pt/BST/Pt/TiN/Ti/Si capacitors has been studied. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si-plug respectively. This event would degrade the BST capacitors. To address this issue, rapid-thermal-annealed TiN barriers were used between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found in this experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors, including high dielectric constant (εr =320), low leakage current (1.5×10−8 A/cm2) under 0.1 MV/cm, and life time longer than 10 year lifetime under 1.6 MV/cm were obtained with Ar+O2 mixed ambient at a low substrate temperature (300°C).

Effect of TiN Treated by Rapid Thermal Annealing on Properties of BST Capacitors Prepared by RF Magnetron Co-sputter System at Low Substrate Temperature

1999 ◽  
Vol 596 ◽  
Author(s):  
T. H. Teng ◽  
C. C. Hwang ◽  
M. J. Lai ◽  
S. C. Huang ◽  
J. S. Chen ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
High Dielectric Constant ◽  
Thermal Budget ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Key Issues ◽  
High Dielectric

AbstractIn this work, (Ba0.7Sr0.3)TiO3 thin films on Pt/TiN/Ti/Si substrate were deposited by an RF magnetron co-sputter system at 300°C in an Ar+O2 mixed ambient. In the integration of BST capacitors, the diffusion barrier (TiN) under bottom electrodes is one of the key issues. To obtain a stable and excellent diffusion barrier against inter-diffusion between Pt and Si, as well as against being oxidized during BST deposition, TiN was treated by a rapid thermal annealing (RTA) process. Experimental results indicated that proper RTA treatments resulted in a superior TiN barrier layer. In addition, low substrate temperature during BST deposition suppressed the phenomena of inter-diffusion and barrier oxidation. Furthermore, Pt hillocking, another problem during BST deposition because of high thermal budget, was also solved by reducing substrate temperature during BST deposition. The MIM (Pt/BST/Pt) structure was used in the experiments for electrical properties measurement. High dielectric constant (εr =300), low leakage current (l.5×10−8 A/cm2) under 0.1MV/cm, and 10 year lifetime under 1.6MV/cm were achieved with an Ar+O2 mixed ambient at a low substrate temperature (300°C).

Effect of Simultaneous Addition of Zr and Y on Electrical Characteristics of ZnO Varistors

2011 ◽  
Vol 485 ◽  
pp. 257-260 ◽  
Author(s):  
Takayuki Watanabe ◽  
Ai Fukumori ◽  
Yuji Akiyamna ◽  
Yuuki Sato ◽  
Shinzo Yoshikado
Keyword(s):  
Leakage Current ◽  
Nonlinear Coefficient ◽  
The Other ◽  
Electrical Characteristics ◽  
Simultaneous Addition ◽  
Zno Varistor ◽  
Low Leakage ◽  
Electrical Degradation ◽  
Low Leakage Current ◽  
Zno Varistors

The effect of simultaneously adding Zr and Y to Bi–Mn–Co–Sb–Si–Cr–Ni-added ZnO varistors (having the same composition as a commercial varistor) on the varistor voltage, leakage current, and resistance to electrical degradation were investigated. Varistor voltage increased with increasing amount of Y for addition of 0–2 mol % Zr. On the other hand, the nonlinear coefficient α prior to electrical degradation changed very little on the addition of both Y and Zr. With the addition of approximately 1 mol% Zr, the leakage current decreased with increasing amount of Y added. A ZnO varistor with a varistor voltage of approximately 600 V/m, a low leakage current, and excellent resistance to electrical degradation was fabricated by adding approximately 2 mol% Y and approximately 1 mol% Zr.

Electrical Characteristics of New LDD Poly-Si TFT with MIS-Alignment Tolerant Structure for AMLCDs

1997 ◽  
Vol 471 ◽  
Author(s):  
Byung-Hyuk Min ◽  
Jerzy Kanicki
Keyword(s):  
Leakage Current ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Current Ratio ◽  
Low Leakage ◽  
Kink Effect ◽  
Low Leakage Current ◽  
Dual Gate ◽  
Output Characteristics

ABSTRACTA new LDD poly-Si TFT structure having symmetrical electrical characteristics independent of the process induced mis-alignment is described in this paper. Based on the experimental results, we have established there is no difference between the forward and reverse characteristics and a low leakage current, comparable to a conventional LDD poly-Si TFT, has been maintained for this new poly-Si TFTs. The maximum ON/OFF current ratio of about 1×108 is obtained for the LDD length of 1.0 μm. In addition, the kink effect in the output characteristics is remarkably improved in the new TFTs in comparison to the conventional non-LDD single- or dual-gate TFTs.

REDUCED LEAKAGE CURRENT AND ENHANCED MAGNETIC PROPERTIES OF (Bi,Nd)FeO3 THIN FILMS GROWN ON (Ba,Sr)TiO3 BOTTOM LAYER

2012 ◽  
Vol 05 (03) ◽  
pp. 1250032 ◽  
Author(s):  
C. B. MA ◽  
X. G. TANG ◽  
D. G. CHEN ◽  
Q. X. LIU ◽  
Y. P. JIANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Coupling Reaction ◽  
Bottom Layer ◽  
Rf Magnetron Sputtering ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Multiferroic Heterostructure

A multiferroic heterostructure composed of ( Bi 0.875 Nd 0.125) FeO 3 (BNF) are grown on ( Ba 0.65 Sr 0.35) TiO 3(BST) buffered Pt/Ti/SiO2/Si(100) substrate by rf-magnetron sputtering. The heterostructure BNF/BST exhibits a quite low leakage current (3.7 × 10-7 A/cm2 at 300 kV/cm) and dielectric loss (0.0036 at 100 kHz) at room temperature. The saturated magnetization and the coercive field of the BST/BNF heterostructure are 37.7 emu/cm3 and 357.6 Oe, respectively. The low leakage current owed to the action of BST in the charge transfer between BNF and the bottom electrode, the coupling reaction between BST and BNF films. And the better crystallization in BNF/BST heterostructure thin film lead to the ferromagnetic properties enhanced.

Low Temperature Deposition of High Dielectric Constant Thin Films for Decoupling Capacitor Applications

1990 ◽  
Vol 203 ◽  
Author(s):  
P. Li ◽  
B. Gittleman ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Promising Alternative ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Annealing Effects ◽  
Temperature Deposition ◽  
High Dielectric

ABSTRACTHigh dielectric constant thin films for packaging applications were studied. Compared with polycrystalline or epitaxial ferroelectric thin films amorphous ferroelectric films are a promising alternative because of their ease of processing and low leakage current. Reactive Partially Ionized Beam deposition (RPIB) offers a new approach to deposit high dielectric constant films at a low substrate temperature. As an example, the growth of amorphous BaTiOs thin films using RPIB deposition is described. The films were characterized in terms of dielectric constant and leakage current. The annealing effects on the film properties are also discussed.

Effect of La Contents on La-Doped Bi2Ti2O7 Dielectric Thin Films

2013 ◽  
Vol 750-752 ◽  
pp. 931-935
Author(s):  
Xue Na Yang ◽  
Jian An Liu ◽  
Bai Biao Huang ◽  
Si Jiang Gao
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Dielectric Thin Films ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Xrd Patterns ◽  
High Dielectric ◽  
La Doped

La-doped (Bi1-xLax)2Ti2O7 (BLTO) thin films with different La contents have been grown by CSD method. All the XRD patterns of the samples showed that the films were polycrystalline films. The intensities of the peaks decreased with the increasing of La contents. The general trend of the changes of leakage current was decreased with the increasing of x. The case of dielectric constant as a function of La content is complicated. The rule of change of the dielectric constant is different with different la contents. In view of dielectric constant and dielectric loss, we think that the film of x=0.2 has relative low leakage current and high dielectric constant, which is considered to be adequate for a DRAM.

scholarly journals Effect of catalyst HF concentration on the electrical characteristics of ultra low-k materials

2012 ◽  
Vol 6 (2) ◽  
pp. 97-101 ◽  
Author(s):  
Zhi-Wei He ◽  
Shi-Qiu Zhu ◽  
Sheng-Li Wang ◽  
Zheng Qi ◽  
Yu-Yuan Guan
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Breakdown Field ◽  
Moisture Resistance ◽  
Electrical Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Sol Gel Process ◽  
Capacitance Voltage ◽  
Low K

The effects of catalyst HF concentration on the dielectric and electrical properties of SiOF films are discussed. From the current density-voltage and capacitance-voltage curves, we observed that the film catalyzed with the special concentration of HF (the ratio of HF/H2O = 1/5) shows good moisture resistance, low leakage current (10-11 A/cm2 at 1 MV/cm) and high breakdown field (6 MV/cm), which can be explained by the results of Fourier transform infrared spectra. The dielectric constant value is also very low and reaches about 1.75 after annealing at the temperature of 450?C. Therefore, the concentration of HF catalyst is an important factor in the sol-gel process.

Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

2011 ◽  
Vol 679-680 ◽  
pp. 694-697 ◽  
Author(s):  
Fujiwara Hirokazu ◽  
Masaki Konishi ◽  
T. Ohnishi ◽  
T. Nakamura ◽  
Kimimori Hamada ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Leakage Current ◽  
Surface Defects ◽  
High Yield ◽  
Threading Dislocation ◽  
Electrical Characteristics ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Threading Dislocation Density

The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier schottky Schottky (JBS) diodes were investigated. The 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities are were 0.2×104 and 3.8×104 cm-2, respectively. The improvement of vIt was found that variations in the leakage current and the high yield of large area JBS diodes werecould be were obtained improved by using a wafer with a low threading dislocation density. In the range of low leakage current, the investigation shows showed a correlation between leakage current and threading dislocation density.

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

2006 ◽  
Vol 89 (13) ◽  
pp. 133512 ◽  
Author(s):  
Kyoung H. Kim ◽  
Damon B. Farmer ◽  
Jean-Sebastien M. Lehn ◽  
P. Venkateswara Rao ◽  
Roy G. Gordon
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Atomic Layer ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
High Dielectric

Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 927-930 ◽  
Author(s):  
Tomonori Nakamura ◽  
Toshiyuki Miyanagi ◽  
Isaho Kamata ◽  
Hidekazu Tsuchida
Keyword(s):  
Schottky Barrier ◽  
Annealing Temperature ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Barrier Heights ◽  
Excess Current ◽  
Low Leakage ◽  
Low Leakage Current

We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes (SBDs), and derived the Schottky barrier heights (Hbs) of Ta, W, Mo, and Pd on {0001}. We investigated the annealing temperature dependence of Hbs in Mo and the W Schottky contacts for (0001) and (000-1). The Hbs are increased by annealing, except for the W Schottky contact on (0001). The yields of 0.25 cm2 as-deposited Mo-SBDs were 93.3% for (0001) and 71.1% for (000-1), respectively. We also demonstrated over 1 cm2 (0001) as-deposited Mo-SBD with a low leakage current, an excellent ideality factor, and no excess current, encouraging the enlargement of the active area in the SBD.

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