scholarly journals Kinetics Of Charge Generation During Formation Of Hf And Zr Silicate Dielectrics

2003 ◽  
Vol 765 ◽  
Author(s):  
Theodosia Gougousi ◽  
M. Jason Kelly ◽  
Gregory N. Parsons
Keyword(s):  
Photoelectron Spectroscopy ◽  
State Density ◽  
Fixed Charge ◽  
Charge Generation ◽  
Flatband Voltage ◽  
Partial Neutralization ◽  
High Dielectric ◽  
Charged Defects ◽  
Kinetics Of ◽  
Oxidation Mechanisms

AbstractUnderstanding charged defects in high dielectric constant insulators is a critical challenge for advanced devices. We have formed thin Zr and Hf silicates by oxidation of thin metal films sputtered on clean Si(100) and studied the effect of oxidation time (15 to 300s) and temperature (600 or 900°C) on the flatband voltage using capacitance vs. voltage measurements. We find that the thermal budget during oxidation and the type of oxidizing agent (slow vs. fast) affect the amount of fixed charge in the film significantly. Oxidation of 0.8nm of Zr metal on Si at 600°C in N2O for 15s results in EOT=1.2nm and a shift in the flatband voltage by ∼-0.2V indicating generation of positive fixed charge. Oxidation of similar films for 300s result in EOT=2.8nm and shift of the flatband voltage by ∼-0.95V. Hf films oxidized in N2O also show increased concentrations of fixed charge for longer oxidation times. By comparison, Si oxidized in the same environment does not show this extent of flatband voltage shift. A significantly reduced charge generation rate is observed for Hf oxidation under low O2 partial pressure. Extended oxidations (up to 1h) result in increased EOT and a slight decrease in the charged defect state density. Forming Gas Anneal (FGA) results in partial neutralization of the charge. FGA after the Al gate deposition also leads to significant decrease of the EOT (from 2.7 to 2.1nm) indicating significant reaction of the film with the gate metal. X-ray photoelectron spectroscopy for thin films indicates formation of Zr and Hf-silicates. However, for thick Hf films the low O2 oxidation process results in less silicon incorporation in the film as compared to films oxidized in N2O. Results suggest that understanding oxidation mechanisms will be important in isolating andcontrollingfixedchargeinhigh-kdielectrics.

scholarly journals Simultaneous Kinetics of Selenite Oxidation and Sorption on δ-MnO2 in Stirred-Flow Reactors

2021 ◽  
Vol 18 (6) ◽  
pp. 2902
Author(s):  
Zheyong Li ◽  
Yajun Yuan ◽  
Lin Ma ◽  
Yihui Zhang ◽  
Hongwei Jiang ◽  
...  
Keyword(s):  
Rate Constant ◽  
Photoelectron Spectroscopy ◽  
Oxide Surfaces ◽  
Kinetic Rate Constant ◽  
Flow Reactors ◽  
Mn Oxide ◽  
Remediation Strategies ◽  
Process Of Se ◽  
Kinetics Of

Selenium (Se) is an essential and crucial micronutrient for humans and animals, but excessive Se brings negativity and toxicity. The adsorption and oxidation of Se(IV) on Mn-oxide surfaces are important processes for understanding the geochemical fate of Se and developing engineered remediation strategies. In this study, the characterization of simultaneous adsorption, oxidation, and desorption of Se(IV) on δ-MnO2 mineral was carried out using stirred-flow reactors. About 9.5% to 25.3% of Se(IV) was oxidized to Se(VI) in the stirred-flow system in a continuous and slow process, with the kinetic rate constant k of 0.032 h−1, which was significantly higher than the apparent rate constant of 0.0014 h−1 obtained by the quasi-level kinetic fit of the batch method. The oxidation reaction was driven by proton concentration, and its rate also depended on the Se(IV) influent concentration, flow rate, and δ-MnO2 dosage. During the reaction of Se(IV) and δ-MnO2, Mn(II) was produced and adsorbed strongly on Mn oxide surfaces, which was evidenced by the total reflectance Fourier transform infrared (ATR-FTIR) results. The X-ray photoelectron spectroscopy (XPS) data indicated that the reaction of Se(VI) on δ-MnO2 produced Mn(III) as the main product. These results contribute to a deeper understanding of the interface chemical process of Se(IV) with δ-MnO2 in the environment.

Properties of Thin SiO2 Films with In-Situ Deposition of Poly Si Electrodes

1989 ◽  
Vol 146 ◽  
Author(s):  
Paihung Pan ◽  
Ahmad Kermani ◽  
Wayne Berry ◽  
Jimmy Liao
Keyword(s):  
Electrical Properties ◽  
Breakdown Strength ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
In Situ Deposition ◽  
Different Temperatures ◽  
Flatband Voltage ◽  
Si Films

ABSTRACTElectrical properties of thin (12 nm) SiO2 films with and without in-situ deposited poly Si electrodes have been studied. Thin SiO2 films were grown by the rapid thermal oxidation (RTO) process and the poly Si films were deposited by the rapid thermal chemical vapor deposition (RTCVD) technique at 675°C and 800°C. Good electrical properties were observed for SiO2 films with thin in-situ poly Si deposition; the flatband voltage was ∼ -0.86 V, the interface state density was < 2 × 1010/cm2/eV, and breakdown strength was > 10 MV/cm. The properties of RTCVD poly Si were also studied. The grain size was 10-60 rim before anneal and was 50-120 rim after anneal. Voids were found in thin (< 70 nm) RTCVD poly Si films. No difference in either SiO2 properties or poly Si properties was observed for poly Si films deposited at different temperatures.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

GROWTH OF OXIDE LAYER ON GERMANIUM (011) SUBSTRATE UNDER DRY AND WET ATMOSPHERES

1999 ◽  
Vol 06 (06) ◽  
pp. 1053-1060 ◽  
Author(s):  
N. TABET ◽  
J. AL-SADAH ◽  
M. SALIM
Keyword(s):  
Simple Model ◽  
Oxide Film ◽  
Growth Kinetics ◽  
Photoelectron Spectroscopy ◽  
Early Stage ◽  
X Ray ◽  
Apparent Thickness ◽  
Different Temperatures ◽  
Kinetics Of

X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the oxidation of (011) Ge substrates. The sample surfaces were CP4-etched, then annealed in situ, at different temperatures, for various durations. Dry and wet atmospheres were used. The oxidation rate during the early stage was increased by the presence of moisture in the atmosphere. A simple model was used to define and determine an apparent thickness of the oxide film from XPS measurements. The time dependence of the apparent thickness is consistent with a partial coverage of the surface by oxide islands. The growth kinetics of the oxide islands obeys a nearly cubic law.

Kinetics of the reduction of nicotinonitrile cations by 1,4-dihydronicotinamides

1985 ◽  
Vol 63 (6) ◽  
pp. 1245-1249 ◽  
Author(s):  
John W. Bunting ◽  
John C. Brewer
Keyword(s):  
Ionic Strength ◽  
Transition State ◽  
Isotope Effects ◽  
Kinetic Isotope Effects ◽  
Spectral Studies ◽  
Close Correspondence ◽  
Charge Generation ◽  
Kinetic Isotope ◽  
Hammett Σ Constants ◽  
Kinetics Of

The rates of reduction of a series of 1-(Z-benzyl)nicotinonitrile cations by a series of 1-(X-benzyl)-1,4-dihydronicotinamides have been studied at 25 °C in 20% CH3CN – 80% H2O (pH 7.0 (5 mM phosphate), ionic strength 1.0 (KCl)). Spectral studies indicate the formation of 1,4-dihydronicotinonitrile products, without the formation of the isomeric 1,2-dihydro- or 1,6-dihydro-nicotinamide intermediates. Second-order rate constants (k2) for these reductions are closely correlated with the Hammett σ constants for X and Z. Thus, for X = H, log k2 = 0.63σz − 1.05, while for Z = 4-CN, log k2 = −0.64σx − 0.65. The close correspondence between these ρx and ρz values indicates that charge neutralization on the nicotinonitrile cation exactly balances charge generation on the nicotinamide cation product in the rate-determining transition state. Thus the migrating hydrogen species is electrically neutral in the rate-determining transition state, which contrasts with the hydridic transition states previously reported in the reduction of isoquinolinium cations by 1,4-dihydronicotinamides. When 1-benzyl-4,4-dideuterio-1,4-dihydronicotinamide is used as the reductant, primary kinetic isotope effects of 3.0 and 2.7 are observed for the reduction of the 1-methylnicotinonitrile and 1-(4-cyanobenzyl)-nicotinonitrile cations, respectively. These data are evaluated in terms of the various mechanistic possibilities for hydride transfer.

Passivation of Gaas by Novel P2S5/(NH4)2Sx Sulfurization Techniques

1992 ◽  
Vol 281 ◽  
Author(s):  
J. T. Hsieh ◽  
C. Y. Sun ◽  
H. L. Hwang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Schottky Diodes ◽  
Lower Surface ◽  
State Density ◽  
Surface Band ◽  
Band Bending ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Metal Work

ABSTRACTA new surface passivation technique using P2S5/(NH4)2S on GaAs was investigated, and the results are compared with those of the (NH4)2Sx treatment. With this new surface treatment, the effective barrier heights for both Al- and Au—GaAs Schottky diodes were found to vary with the metal work functions, which is a clear evidence of the lower surface state density. Results of I—V measurements show that P2S5/(NH4)2S—passivated diodes have lower reverse leakage current and higher effective barrier height than those of the (NH4)2Sx -treated ones. Auger Electron Spectroscopy, X—ray photoelectron spectroscopy and Raman scattering measurements were done to characterize the surfaces including their compositions and surface band bending. In this paper, interpretations on this novel passivation effect is also provided.

scholarly journals Enhanced removal of hexavalent chromium by different acid-modified biochar derived from corn straw: behavior and mechanism

2020 ◽  
Vol 81 (10) ◽  
pp. 2270-2280
Author(s):  
Yonggang Xu ◽  
Tianxia Bai ◽  
Yubo Yan ◽  
Yunfeng Zhao ◽  
Ling Yuan ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hydrogen Ion ◽  
Corn Straw ◽  
Order Model ◽  
Freundlich Model ◽  
X Ray ◽  
Modified Biochar ◽  
Before And After ◽  
Pseudo Second Order ◽  
Kinetics Of

Abstract It is of great significance to remove Cr(VI) from water as a result of its high toxicity. Biochar from corn straw was modified by different acids (HNO3, H2SO4 and H3PO4) to remove Cr(VI) from aqueous solution. To estimate the removal mechanisms of Cr(VI) by the acid-modified biochars, batch experiments were performed in the light of contact time, Cr(VI) concentration, and pH, and the characteristics of acid-modified biochars before and after Cr(VI) adsorption were investigated by Fourier transform infrared spectra (FTIR) and X-ray photoelectron spectroscopy (XPS). The adsorption kinetics of Cr(VI) by acid-modified biochars were consistent with the pseudo-second-order model, and the adsorption isotherm obeyed the Freundlich model. Furthermore, the acid- modified biochars could supply more oxygen-containing functional groups (-COOH and -OH) as electron donor (e−) and hydrogen ion (H+) to enhance the reduction of Cr(VI) to Cr(III), resulting in enhanced removal of Cr(VI). HNO3-modified biochar exhibited the highest removal efficiency of Cr(VI). In general, the acid modifition of biochar was an effective method to increase the removal of Cr(VI).

Temperature Dependence of the Decay of Optically Excited Charge Carriers in Amorphous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
J. Whitaker ◽  
P. C. Taylor
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
State Density ◽  
Charge Carriers ◽  
Band Tail ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Long Time ◽  
Tail Structure ◽  
Kinetics Of

AbstractWe report the temperature dependence of the growth and decay of the optically induced electron spin resonance (LESR) on short and long time scales (10-3 s < t < 2500 s). This range of times spans the region between previously published photoluminescence and the LESR data. In addition, we examine the steady-state density of optically excited charge carriers as a function of temperature. These measurements lead to a better understanding of the band tail structure of amorphous silicon as well as the kinetics of the excitation and recombination processes.

Impact of Interfacial Nitridation of HfO2 High-k Gate Dielectric Stack on 4H-SiC

2007 ◽  
Vol 996 ◽  
Author(s):  
Rajat Mahapatra ◽  
Amit K. Chakraborty ◽  
Peter Tappin ◽  
Bing Miao ◽  
Alton B. Horsfall ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Interface State ◽  
State Density ◽  
Breakdown Field ◽  
Electrical Measurements ◽  
Electrical Stress ◽  
High K ◽  
Pile Up ◽  
Current Characteristics

AbstractHfO2 films were grown on SiO2/4H-SiC and SiON/4H-SiC layers by evaporation of metallic Hf in an electron beam deposition system followed by thermal oxidation. X-ray photoelectron spectroscopy confirmed the formation of HfO2 films. There is no evidence of formation of hafnium silicide or carbon pile up at the surface as well as at the interfacial layer. Electrical measurements show the presence of fewer slow traps in the HfO2/SiON gate dielectric stack on 4H-SiC and comparable values of interface state density. The HfO2/SiON stack layer improves leakage current characteristics with a higher breakdown field and has better reliability under electrical stress.

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