scholarly journals An Enhanced Two-Dimensional Hole Gas (2DHG) C-H Diamond with Positive Surface Charge Model for Advanced Normally-Off MOSFET Devices

2020 ◽  
Author(s):  
Reem Alhasani ◽  
Taichi Yabe ◽  
Yutaro Iyama ◽  
Nobutaka Oi ◽  
Shoichiro Imanishi ◽  
...  
Keyword(s):  
Surface Charge ◽  
Threshold Voltage ◽  
Oxide Semiconductor ◽  
Diamond Surface ◽  
Two Dimensional ◽  
Switching Losses ◽  
Positive Surface Charge ◽  
Charge Model ◽  
Silvaco Atlas ◽  
The Impact

Abstract Though the complementary power field effect transistore (FETs), e.g., metal-oxide-semiconductor-FETs (MOSFETs) based on wide badgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material other than diamond. In this paper, we propose the first work to investigate the impact of fixed positive surface charge density on achieving normally-off and control threshold voltage operation obtained on p-channel two-dimensional hole gas (2DHG) hydrogen-terminated diamond (C-H) FET using deep nitrogen doping in the diamond substrate. In general, a p-channel diamond C-H MOSFET demonstrates normally-on operation, but the normally-off operation is also a critical requierment of the feasible electronic power devices in terms of safety operation. The evaluation results of the characteristic of the C-H MOSFET capacitor with the two demonstrated charge sheet models using the two-dimensional Silvaco Atlas TCAD show that the fixed-Fermi level is a function of capacitance-voltage with an activation energy of 1.7 eV (donor level) at the H-diamond surface close to minimum conduction band. The maximum current density with a positive surface charge model and a nitrogen-doped layer of the Al2O3/H-diamond device is -52 mA/mm at a gate-source voltage of -42 V. Also, the gate threshold voltage is relatively high at Vth= -3 V, i.e., the positive surface charge model can achieve the normally-off operation. Moreover, we demonstrate that the obtained results correspond to the experimental work with the SiO2 layer located below the gate in C-H diamond/Al2O3 surface.

scholarly journals Threshold voltage modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates

2011 ◽  
Vol 8 (2) ◽  
pp. 147-154
Author(s):  
Amit Chaudhry ◽  
Nath Jatindra
Keyword(s):  
Threshold Voltage ◽  
Crystal Orientation ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Model ◽  
Inversion Charge ◽  
Effect Transistor ◽  
Good Agreement

An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the quantum inversion charge model under three substrate orientations. The results indicate a significant impact of crystal orientation on the threshold voltage and the inversion charge density. The results have also been compared with the numerically reported results and show good agreement.

scholarly journals Analytical Breakdown Voltage Model for Partial SOI-LDMOS Transistor with Buried Oxide Step Structure

2021 ◽  
Author(s):  
Jagamohan Sahoo ◽  
Rajat Mahapatra
Keyword(s):  
Electric Field ◽  
Analytical Model ◽  
Breakdown Voltage ◽  
Point Of View ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Drift Region ◽  
Two Dimensional ◽  
The Impact

Abstract We have developed a simple physics-based two-dimensional analytical Off-state breakdown voltage model of a PBOSS Silicon-On-Insulator Lateral Diffused Metal Oxide Semiconductor (SOI-LDMOS) transistor. The analytical model includes the expressions of surface potential and electric field distributions in the drift region by solving the 2D Poisson’s equation. The electric field at the Si-SiO2 surface is modified by creating additional electric field peaks due to the presence of the PBOSS structure. The uniformly distributed electric field results in improving the breakdown voltage. Further, the breakdown voltage is analytically obtained via critical electric field concept to quantify the breakdown characteristic. The model exploits the impact of the critical device design parameters such as thickness and length of the PBOSS structure, doping, and thickness of the drift region on the surface electric field and the breakdown voltage. The proposed model is verified by the results obtained from ATLAS two dimensional simulations. The analytical model is of the high potential from a physical and mathematical point of view to design high voltage SOI-LDMOS transistors for power switching applications.

scholarly journals Threshold Voltage Degradation for n-Channel 4H-SiC Power MOSFETs

2020 ◽  
Vol 10 (1) ◽  
pp. 3
Author(s):  
Esteban Guevara ◽  
Victor Herrera-Pérez ◽  
Cristian Rocha ◽  
Katherine Guerrero
Keyword(s):  
Silicon Carbide ◽  
Threshold Voltage ◽  
Measurement Data ◽  
Oxide Semiconductor ◽  
Damage Effect ◽  
Temperature Instability ◽  
Characterization Methods ◽  
Power Mosfets ◽  
Bias Temperature Instability ◽  
The Impact

In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide semiconductor field electric transistor MOSFETs was evaluated using devices manufactured from two different manufacturers. The characterization process included PBTI (positive bias temperature instability) and pulsed IV measurements of devices to determine electrical parameters’ degradations. This work proposes an experimental procedure to characterize silicon carbide (SiC) power MOSFETs following two characterization methods: (1) Using the one spot drop down (OSDD) measurement technique to assess the threshold voltage explains temperature dependence when used on devices while they are subjected to high temperatures and different gate voltage stresses. (2) Measurement data processing to obtain hysteresis characteristics variation and the damage effect over threshold voltage. Finally, based on the results, it was concluded that trapping charge does not cause damage on commercial devices due to reduced value of recovery voltage, when a negative small voltage is applied over a long stress time. The motivation of this research was to estimate the impact and importance of the bias temperature instability for the application fields of SiC power n-MOSFETs. The importance of this study lies in the identification of the aforementioned behavior where SiC power n-MOSFETs work together with complementary MOS (CMOS) circuits.

scholarly journals Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000053-000057
Author(s):  
Martijn S. Duraij ◽  
Yudi Xiao ◽  
Gabriel Zsurzsan ◽  
Zhe Zang
Keyword(s):  
Threshold Voltage ◽  
Dynamic Performance ◽  
Extreme Temperature ◽  
Switching Speed ◽  
Design Work ◽  
Switching Losses ◽  
Power Stage ◽  
Parasitic Parameters ◽  
Output Characteristics ◽  
The Impact

Abstract Parasitic components in eGaN-FETs impact the dynamic performance of switching stages. The capacitances seen, primarily on the output characteristics, of these devices are a main contributor towards switching losses and therefor converter efficiency. Additionally, the threshold voltage of the device has an impact towards the switching speed and therefore the efficiency of a power stage. This study shows the impact of extreme temperatures towards the parasitics that impact the switching behaviour of a power stage. A literature research is conducted exploring the various mechanisms and temperature dependancies, which are then related towards transient operations of eGaN-FETs. A device was chosen to perform measurements on output-, reverse transfer capacitance and threshold voltage while increasing temperature from 100°C op to 225°C. The presented results show a large impact of temperature in these parasisic elements that show that high temperature switch-mode power converters need additional design work to ensure switching performance and lifetime.

Recent Advances and Need of Green Synthesis in Two-Dimensional Materials for Energy Conversion and Storage Applications

2021 ◽  
Vol 16 ◽  
Author(s):  
Joice Sophia Ponraj ◽  
Muniraj Vignesh Narayanan ◽  
Ranjith Kumar Dharman ◽  
Valanarasu Santiyagu ◽  
Ramalingam Gopal ◽  
...  
Keyword(s):  
Energy Storage ◽  
Green Synthesis ◽  
2D Materials ◽  
Synthesis Method ◽  
Energy Storage And Conversion ◽  
Two Dimensional ◽  
Severe Problem ◽  
Energy Conversion And Storage ◽  
Energy Application ◽  
The Impact

: Increasing energy crisis across the globe requires immediate solutions. Two-dimensional (2D) materials are in great significance because of its application in energy storage and conversion devices but the production process significantly impacts the environment thereby posing a severe problem in the field of pollution control. Green synthesis method provides an eminent way of reduction in pollutants. This article reviews the importance of green synthesis in the energy application sector. The focus of 2D materials like graphene, MoS2, VS2 in energy storage and conversion devices are emphasized based on supporting recent reports. The emerging Li-ion batteries are widely reviewed along with their promising alternatives like Zn, Na, Mg batteries and are featured in detail. The impact of green methods in the energy application field are outlined. Moreover, future outlook in the energy sector is envisioned by proposing an increase in 2D elemental materials research.

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