A Sample Preparation Methodology for Effective Failure Analysis of Trench Power MOSFET

2013 ◽  
Author(s):  
Yan Li ◽  
S.K. Loh ◽  
C.Q. Chen ◽  
G.B. Ang ◽  
A.C.T. Quah ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Success Rate ◽  
Defect Detection ◽  
Fault Localization ◽  
Power Mosfet

Abstract This paper describes a sample preparation methodology for Trench Power MOSFET that significantly improved our failure analysis success rate for trench bottom defect. With precise fault localization and subsequent a unique physical failure analysis using parallel polishing method on Trench Power MOSFET, This enabled defect detection from the trench top to the trench bottom.

A Sample Preparation on Decapsulation Methodology for Effective Failure Analysis on Thin Small Leadless (TSLP) Flip Chip Package with Copper Pillar (CuP) Bump Interconnect Technology

2014 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Localization ◽  
Cost Effective ◽  
Fault Isolation ◽  
Voltage Contrast ◽  
Interconnect Technology

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.

Detectability of Automotive Power MOSFET On-Resistance Failure at High Current Induced by Wafer Fab Process Excursion

2014 ◽  
Author(s):  
Yann Weber ◽  
Julien Goxe ◽  
Maris Castignolles
Keyword(s):  
Failure Analysis ◽  
Low Voltage ◽  
Fault Localization ◽  
Automotive Application ◽  
High Current ◽  
Process Variability ◽  
Power Mosfet ◽  
Wafer Fab ◽  
A Minor

Abstract This paper presents the meaningful consequence of a minor Wafer Fab process variability, generating on-resistance drift on low voltage vertical power N-MOSFETs dedicated to microhybrid automotive application. The originality of this paper concerns the necessity to use complementary failure analysis investigations needed to determine the origin of the failure without any possibilities to perform any fault localization. The results enabled implementation of corrections and improvement of test screening to protect customers.

Case Studies on Application of Electro Optical Probing (EOP) - A Noninvasive Backside Localization Technique in Failure Analysis

2019 ◽  
Author(s):  
Srinath Rajaram ◽  
Rajesh Kabadi ◽  
Eric Barbian
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Case Studies ◽  
Fault Localization ◽  
Localization Technique ◽  
Localize Failure ◽  
Advanced Packaging ◽  
Optical Probing ◽  
Deposition Techniques ◽  
No Sample Preparation

Abstract Given the challenges FA Engineers have in fault localization, top-side analysis is facing a major challenge with today’s advanced packaging and shrinking of die sizes. At wafer and die level it is relatively easy to probe with little or no sample preparation. Greater challenges occur after the die is packaged. The difficulty further lies in non-destructively analyzing the die. Another issue with failure analysis is accurately deprocessing the device for probe pad deposition. Techniques like Electro Optical Probing (EOP) or Laser Voltage Probing (LVP) acquire electrical signals on transistors and create an activity map of the circuitry. In failure analysis, it is applied to localize defects. This paper discusses integrating EOP techniques in traditional FA to localize failure in mixed signal ICs. Three case studies were presented in this paper to establish the technique to be effective, quick and easy to probe non-invasively with minimal backside sample preparation.

Novel Failure Analysis Sample Preparation Techniques for PoP Packaging

2012 ◽  
Author(s):  
Ng Sea Chooi ◽  
Chor Theam Hock ◽  
Ma Choo Thye ◽  
Khoo Poh Tshin ◽  
Dan Bockelman
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanisms ◽  
Preparation Process ◽  
Space Saving ◽  
Optical Probing ◽  
Preparation Techniques

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.

Rapid Failure Analysis of Low-Yielding Electrical Test Structures Using E-beam Physical and Voltage Contrast Inspection

2013 ◽  
Author(s):  
Oliver D. Patterson ◽  
Deborah A. Ryan ◽  
Xiaohu Tang ◽  
Shuen Cheng Lei
Keyword(s):  
Failure Analysis ◽  
Defect Detection ◽  
High Volume ◽  
The Other ◽  
Defect Inspection ◽  
Electrical Test ◽  
Detection Mode ◽  
Rapid Generation ◽  
Voltage Contrast ◽  
Additional Support

Abstract In-line E-beam inspection may be used for rapid generation of failure analysis (FA) results for low yielding test structures. This approach provides a number of advantages: 1) It is much earlier than traditional FA, 2) de-processing isn’t required, and 3) a high volume of sites can be processed with the additional support of an in-line FIB. Both physical defect detection and voltage contrast inspection modes are useful for this application. Voltage contrast mode is necessary for isolation of buried defects and is the preferred approach for opens, because it is faster. Physical defect detection mode is generally necessary to locate shorts. The considerations in applying these inspection modes for rapid failure analysis are discussed in the context of two examples: one that lends itself to physical defect inspection and the other, more appropriately addressed with voltage contrast inspection.

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

Thin-Die Flip Chip Physical-FA Process Flow

2002 ◽  
Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Semiconductor Industry ◽  
Organic Substrate ◽  
Fault Isolation ◽  
Preparation Methods ◽  
Chip Technology ◽  
Isolation Test ◽  
Sample Preparation Methods

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.

Application of Automated FIB for TEM Sample Preparation in Semiconductor Failure Analysis

2014 ◽  
Author(s):  
Jie Zhu ◽  
Soo Sien Seah ◽  
Irene Tee ◽  
Bing Hai Liu ◽  
Eddie Er ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Success Rate ◽  
Protective Layer ◽  
Factors Affecting ◽  
Dual Beam ◽  
Lamella Thickness ◽  
Surface Patterns ◽  
Working Parameters ◽  
Practical Factors ◽  
High Flexibility

Abstract In this paper, we describe automated FIB for TEM sample preparation using iFast software on a Helios 450HP dual-beam system. A robust iFast automation recipe needs to consider as many variables as possible in order to ensure consistent sample quality and high success rate. Variations mainly come from samples of different materials, structures, surface patterns, surface topography and surface charging. The recipe also needs to be user-friendly and provide high flexibility by allowing users to choose preferable working parameters for specific types of samples, such as: grounding, protective layer coating, milling steps, and final TEM lamella thickness/width. In addition to the iFast recipe, other practical factors affecting automation success rate are also discussed and highlighted.

Introduction of a Novel Sample Preparation Technique for the Failure Analysis of Silicon Integrated Photonics Modules

2019 ◽  
Author(s):  
Pradip Sairam Pichumani ◽  
Fauzia Khatkhatay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Silicon Photonics ◽  
Cmos Technology ◽  
Single Step ◽  
Oxide Semiconductor ◽  
Disruptive Technology ◽  
Preparation Technique ◽  
Test Vehicle ◽  
Sample Preparation Technique

Abstract Silicon photonics is a disruptive technology that aims for monolithic integration of photonic devices onto the complementary metal-oxide-semiconductor (CMOS) technology platform to enable low-cost high-volume manufacturing. Since the technology is still in the research and development phase, failure analysis plays an important role in determining the root cause of failures seen in test vehicle silicon photonics modules. The fragile nature of the test vehicle modules warrants the development of new sample preparation methods to facilitate subsequent non-destructive and destructive analysis methods. This work provides an example of a single step sample preparation technique that will reduce the turnaround time while simultaneously increasing the scope of analysis techniques.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

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