PVT-Robust CMOS Programmable Chaotic Oscillator: Synchronization of Two 7-Scroll Attractors

Designing chaotic oscillators using complementary metal-oxide-semiconductor (CMOS) integrated circuit technology for generating multi-scroll attractors has been a challenge. That way, we introduce a current-mode piecewise-linear (PWL) function based on CMOS cells that allow programmable generation of 2–7-scroll chaotic attractors. The mathematical model of the chaotic oscillator designed herein has four coefficients and a PWL function, which can be varied to provide a high value of the maximum Lyapunov exponent. The coefficients are implemented electronically by designing operational transconductance amplifiers that allow programmability of their transconductances. Design simulations of the chaotic oscillator are provided for the 0.35 μ m CMOS technology. Post-layout and process–voltage–temperature (PVT) variation simulations demonstrate robustness of the multi-scroll chaotic attractors. Finally, we highlight the synchronization of two seven-scroll attractors in a master–slave topology by generalized Hamiltonian forms and observer approach. Simulation results show that the synchronized CMOS chaotic oscillators are robust to PVT variations and are suitable for chaotic secure communication applications.

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Experimental Implementation of Networked Chaotic Oscillators Based on Cross-Coupled Inverter Rings in a CMOS Integrated Circuit

Journal of Circuits System and Computers ◽

10.1142/s0218126615501443 ◽

2015 ◽

Vol 24 (09) ◽

pp. 1550144 ◽

Cited By ~ 4

Author(s):

Ludovico Minati

Keyword(s):

Experimental Data ◽

Integrated Circuit ◽

Phase Synchronization ◽

Random Number Generation ◽

Partial Amplitude ◽

Chaotic Oscillator ◽

Chaotic Oscillators ◽

Cmos Integrated Circuit ◽

Experimental Implementation ◽

Small Clusters

A novel chaotic oscillator based on "cross-coupled" inverter rings is presented. The oscillator consists of a 3-ring to which higher odd n-rings are progressively coupled via diodes and pass gates; it does not contain reactive or resistive elements, and is thus suitable for area-efficient implementation on a CMOS integrated circuit. Numerical simulation based on piece-wise linear approximation predicted the generation of positive spikes having approximately constant periodicity but highly variable cycle amplitude. Simulation Program with Integrated Circuit Emphasis (SPICE) simulations and experimental data from a prototype realized on 0.7 μm technology confirmed this finding, and demonstrated increasing correlation dimension (D2) as 5-, 7- and 9-rings were progressively coupled to the 3-ring. Experimental data from a ring of 24 such oscillator cells showed phase synchronization and partial amplitude synchronization (formation of small clusters), emerging depending on DC gate voltage applied at NMOS transistors implementing diffusive coupling between neighboring cells. Thanks to its small area, simple synchronizability and digital controllability, the proposed circuit enables experimental investigation of dynamical complexity in large networks of coupled chaotic oscillators, and may additionally be suitable for applications such as broadband signal and random number generation.

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DESIGN OF TIME DELAYED CHAOTIC CIRCUIT WITH THRESHOLD CONTROLLER

International Journal of Bifurcation and Chaos ◽

10.1142/s0218127411028751 ◽

2011 ◽

Vol 21 (03) ◽

pp. 725-735 ◽

Cited By ~ 16

Author(s):

K. SRINIVASAN ◽

I. RAJA MOHAMED ◽

K. MURALI ◽

M. LAKSHMANAN ◽

SUDESHNA SINHA

Keyword(s):

Numerical Simulations ◽

Linear Function ◽

Piecewise Linear ◽

Piecewise Linear Function ◽

Operational Amplifiers ◽

Phase Portraits ◽

Chaotic Attractors ◽

Chaotic Oscillator ◽

Threshold Values ◽

Chaotic Circuit

A novel time delayed chaotic oscillator exhibiting mono- and double scroll complex chaotic attractors is designed. This circuit consists of only a few operational amplifiers and diodes and employs a threshold controller for flexibility. It efficiently implements a piecewise linear function. The control of piecewise linear function facilitates controlling the shape of the attractors. This is demonstrated by constructing the phase portraits of the attractors through numerical simulations and hardware experiments. Based on these studies, we find that this circuit can produce multi-scroll chaotic attractors by just introducing more number of threshold values.

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A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth

Micromachines ◽

10.3390/mi11010065 ◽

2020 ◽

Vol 11 (1) ◽

pp. 65

Author(s):

Wenhao Zhi ◽

Qingxiao Quan ◽

Pingping Yu ◽

Yanfeng Jiang

Keyword(s):

Optical Communication ◽

Integrated Circuit ◽

Communication Systems ◽

Complementary Metal Oxide Semiconductor ◽

Avalanche Photodiode ◽

Cmos Technology ◽

Optical Signal ◽

Oxide Semiconductor ◽

Monolithically Integrated ◽

Process Modification

Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems. In this paper, an avalanche photodiode (APD) is designed and fulfilled, which is compatible with Taiwan Semiconductor Manufacturing Company (TSMC) 45-nm standard complementary metal–oxide–semiconductor (CMOS) technology without any process modification. The APD based on 45 nm process is beneficial to realize a smaller and more complex monolithically integrated optoelectronic chip. The fabricated CMOS APD operates at 850 nm wavelength optical communication. Its bandwidth can be as high as 8.4 GHz with 0.56 A/W responsivity at reverse bias of 20.8 V. Its active area is designed to be 20 × 20 μm2. The Simulation Program with Integrated Circuit Emphasis (SPICE) model of the APD is also proposed and verified. The key parameters are extracted based on its electrical, optical and frequency responses by parameter fitting. The device has wide potential application for optical communication systems.

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A 24.88 nV/√Hz Wheatstone Bridge Readout Integrated Circuit with Chopper-Stabilized Multipath Operational Amplifier

Applied Sciences ◽

10.3390/app10010399 ◽

2020 ◽

Vol 10 (1) ◽

pp. 399 ◽

Cited By ~ 1

Author(s):

Kwonsang Han ◽

Hyungseup Kim ◽

Jaesung Kim ◽

Donggeun You ◽

Hyunwoo Heo ◽

...

Keyword(s):

Integrated Circuit ◽

Operational Amplifier ◽

Wheatstone Bridge ◽

Input Resistance ◽

Cmos Technology ◽

Low Noise ◽

Oxide Semiconductor ◽

Instrumentation Amplifier ◽

Readout Integrated Circuit ◽

Chopper Stabilization

This paper proposes a low noise readout integrated circuit (IC) with a chopper-stabilized multipath operational amplifier suitable for a Wheatstone bridge sensor. The input voltage of the readout IC changes due to a change in input resistance, and is efficiently amplified using a three-operational amplifier instrumentation amplifier (IA) structure with high input impedance and adjustable gain. Furthermore, a chopper-stabilized multipath structure is applied to the operational amplifier, and a ripple reduction loop (RRL) in the low frequency path (LFP) is employed to attenuate the ripple generated by the chopper stabilization technique. A 12-bit successive approximation register (SAR) analog-to-digital converter (ADC) is employed to convert the output voltage of the three-operational amplifier IA into digital code. The Wheatstone bridge readout IC is manufactured using a standard 0.18 µm complementary metal-oxide-semiconductor (CMOS) technology, drawing 833 µA current from a 1.8 V supply. The input range and the input referred noise are ±20 mV and 24.88 nV/√Hz, respectively.

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Integrated Optoelectronic Devices on Silicon

MRS Proceedings ◽

10.1557/opl.2012.140 ◽

2012 ◽

Vol 1396 ◽

Cited By ~ 1

Author(s):

Di Liang ◽

John E. Bowers

Keyword(s):

Output Power ◽

Integrated Circuit ◽

High Speed ◽

High Performance ◽

Continuous Wave ◽

Light Emission ◽

Extinction Ratio ◽

Cmos Technology ◽

Oxide Semiconductor ◽

Pockels Effect

ABSTRACTSilicon (Si) has been the dominating material platform of microelectronics over half century. Continuous technological advances in circuit design and manufacturing enable complementary metal-oxide semiconductor (CMOS) chips with increasingly high integration complexity to be fabricated in an unprecedently scale and economical manner. Conventional Si-based planar lightwave circuits (PLCs) has benefited from advanced CMOS technology but only demonstrate passive functionalities in most circumstances due to poor light emission efficiency and weak major electro-optic effects (e.g., Pockels effect, the Kerr effect and the Franz–Keldysh effect) in Si. Recently, a new hybrid III-V-on-Si integration platform has been developed, aiming to bridge the gap between Si and III-V direct-bandgap materials for active Si photonic integrated circuit applications. Since then high-performance lasers, amplifiers, photodetectors and modulators, etc. have been demonstrated. Here we review the most recent progress on hybrid Si lasers and high-speed hybrid Si modulators. The former include distributed feedback (DFB) lasers showing over 10 mW output power and up to 85 oC continuous-wave (cw) operation, compact hybrid microring lasers with cw threshold less than 4 mA and over 3 mW output power, and 4-channel hybrid Si AWG lasers with channel space of 360 GHz. Recently fabricated traveling-wave electro-absorption modulators (EAMs) and Mach-Zehnder interferometer modulators (MZM) on this platform support 50 Gb/s and 40 Gb/s data transmission with over 10 dB extinction ratio, respectively.

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Design and Characteristics of CMOS Inverter based on Multisim and Cadence

Journal of Physics Conference Series ◽

10.1088/1742-6596/2108/1/012034 ◽

2021 ◽

Vol 2108 (1) ◽

pp. 012034

Author(s):

Haoran Xu ◽

Jianghua Ding ◽

Jian Dang

Keyword(s):

Metal Oxide ◽

Analog Circuits ◽

Integrated Circuit ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Data Converters ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Cmos Inverter ◽

And Performance

Abstract Known as complementary symmetrical metal oxide semiconductor (cos-mos), complementary metal oxide semiconductor is a metal oxide semiconductor field effect transistor (MOSFET) manufacturing process, which uses complementary and symmetrical pairs of p-type and n-type MOSFETs to realize logic functions. CMOS technology is used to build integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS) and other digital logic circuits. CMOS technology is also used in analog circuits, such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for various types of communications. Based on multisim 14.0 and cadence, the characteristics and performance of CMOS inverter are studied by simulation.

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CMOS OTA-Based Filters for Designing Fractional-Order Chaotic Oscillators

Fractal and Fractional ◽

10.3390/fractalfract5030122 ◽

2021 ◽

Vol 5 (3) ◽

pp. 122

Author(s):

Martín Alejandro Valencia-Ponce ◽

Perla Rubí Castañeda-Aviña ◽

Esteban Tlelo-Cuautle ◽

Victor Hugo Carbajal-Gómez ◽

Victor Rodolfo González-Díaz ◽

...

Keyword(s):

Fractional Order ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Oxide Semiconductor ◽

Chaotic Oscillators ◽

Operational Transconductance Amplifiers ◽

Fractional Order Integrator ◽

The Mathematical Model ◽

Good Agreement

Fractional-order chaotic oscillators (FOCOs) have shown more complexity than integer-order chaotic ones. However, the majority of electronic implementations were performed using embedded systems; compared to analog implementations, they require huge hardware resources to approximate the solution of the fractional-order derivatives. In this manner, we propose the design of FOCOs using fractional-order integrators based on operational transconductance amplifiers (OTAs). The case study shows the implementation of FOCOs by cascading first-order OTA-based filters designed with complementary metal-oxide-semiconductor (CMOS) technology. The OTAs have programmable transconductance, and the robustness of the fractional-order integrator is verified by performing process, voltage and temperature variations as well as Monte Carlo analyses for a CMOS technology of 180 nm from the United Microelectronics Corporation. Finally, it is highlighted that post-layout simulations are in good agreement with the simulations of the mathematical model of the FOCO.

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An Interface ASIC for MEMS Vibratory Gyroscopes with Nonlinear Driving Control

Micromachines ◽

10.3390/mi10040270 ◽

2019 ◽

Vol 10 (4) ◽

pp. 270 ◽

Cited By ~ 7

Author(s):

Risheng Lv ◽

Qiang Fu ◽

Liang Yin ◽

Yuan Gao ◽

Wei Bai ◽

...

Keyword(s):

Integrated Circuit ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Oxide Semiconductor ◽

Resonance Oscillation ◽

Temperature Drift ◽

Sigma Delta ◽

Vibratory Gyroscopes ◽

Digital Circuitry ◽

Mems Vibratory Gyroscopes

This paper proposes an interface application-specific-integrated-circuit (ASIC) for micro-electromechanical systems (MEMS) vibratory gyroscopes. A closed self-excited drive loop is employed for automatic amplitude stabilization based on peak detection and proportion-integration (PI) controller. A nonlinear multiplier terminating the drive loop is designed for rapid resonance oscillation and linearity improvement. Capacitance variation induced by mechanical motion is detected by a differential charge amplifier in sense mode. After phase demodulation and low-pass filtering an analog signal indicating the input angular velocity is obtained. Non-idealities are further suppressed by on-chip temperature drift calibration. In order for better compatibility with digital circuitry systems, a low passband incremental zoom sigma-delta (ΣΔ) analog-to-digital converter (ADC) is implemented for digital output. Manufactured in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, the whole interface occupies an active area of 3.2 mm2. Experimental results show a bias instability of 2.2 °/h and a nonlinearity of 0.016% over the full-scale range.

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Determining the Lyapunov Spectrum of Continuous-Time 1D and 2D Multiscroll Chaotic Oscillators via the Solution ofm-PWL Variational Equations

Abstract and Applied Analysis ◽

10.1155/2013/851970 ◽

2013 ◽

Vol 2013 ◽

pp. 1-11 ◽

Cited By ~ 5

Author(s):

Jesus Manuel Munoz-Pacheco ◽

Luz del Carmen Gómez-Pavón ◽

Olga Guadalupe Félix-Beltrán ◽

Arnulfo Luis-Ramos

Keyword(s):

Lyapunov Exponents ◽

Dynamic Range ◽

Piecewise Linear ◽

Lyapunov Spectrum ◽

System Level ◽

Design Parameters ◽

Chaotic Oscillator ◽

Chaotic Oscillators ◽

Variational Equations ◽

The Impact

An algorithm to compute the Lyapunov exponents of piecewise linear function-based multidirectional multiscroll chaotic oscillators is reported. Based on themregions in the piecewise linear functions, the suggested algorithm determines the individual expansion rate of Lyapunov exponents fromm-piecewise linear variational equations and their associatedm-Jacobian matrices whose entries remain constant during all computation cycles. Additionally, by considering OpAmp-based chaotic oscillators, we study the impact of two analog design procedures on the magnitude of Lyapunov exponents. We focus on analyzing variations of both frequency bandwidth and voltage/current dynamic range of the chaotic signals at electronic system level. As a function of the design parameters, a renormalization factor is proposed to estimate correctly the Lyapunov spectrum. Numerical simulation results in a double-scroll type chaotic oscillator and complex chaotic oscillators generating multidirectional multiscroll chaotic attractors on phase space confirm the usefulness of the reported algorithm.

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Prototyping of an All-pMOS-Based Cross-Coupled Voltage Multiplier in Single-Well CMOS Technology for Energy Harvesting Utilizing a Gastric Acid Battery

Electronics ◽

10.3390/electronics8070804 ◽

2019 ◽

Vol 8 (7) ◽

pp. 804

Author(s):

Shinya Yoshida ◽

Hiroshi Miyaguchi ◽

Tsutomu Nakamura

Keyword(s):

Energy Harvesting ◽

Gastric Acid ◽

Integrated Circuit ◽

Cmos Technology ◽

The Body ◽

Ring Oscillator ◽

Oxide Semiconductor ◽

Mos Transistor ◽

Voltage Multiplier ◽

Single Well

A gastric acid battery and its charge storage in a capacitor are a simple and safe method to provide a power source to an ingestible device. For that method, the electromotive force of the battery should be boosted for storing a large amount of energy. In this study, we have proposed an all-p-channel metal-oxide semiconductor (pMOS)-based cross-coupled voltage multiplier (CCVM) utilizing single-well CMOS technology to achieve a voltage boosting higher than from a conventional complementary MOS (CMOS) CCVM. We prototyped a custom integrated circuit (IC) implemented with the above CCVMs and a ring oscillator as a clock source. The characterization experiment demonstrated that our proposed pMOS-based CCVM can boost the input voltage higher because it avoids the body effect problem resulting from an n-channel MOS transistor. This circuit was also demonstrated to significantly reduce the circuit area on the IC, which is advantageous as it reduces the chip size or provides an area for other functional circuits. This simple circuit structure based on mature and low-cost technologies matches well with disposal applications such as an ingestible device. We believe that this pMOS-based CCVM has the potential to become a useful energy harvesting circuit for ingestible devices.

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