scholarly journals Prototyping of an All-pMOS-Based Cross-Coupled Voltage Multiplier in Single-Well CMOS Technology for Energy Harvesting Utilizing a Gastric Acid Battery

Electronics ◽  
2019 ◽  
Vol 8 (7) ◽  
pp. 804
Author(s):  
Shinya Yoshida ◽  
Hiroshi Miyaguchi ◽  
Tsutomu Nakamura
Keyword(s):  
Energy Harvesting ◽  
Gastric Acid ◽  
Integrated Circuit ◽  
Cmos Technology ◽  
The Body ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Mos Transistor ◽  
Voltage Multiplier ◽  
Single Well

A gastric acid battery and its charge storage in a capacitor are a simple and safe method to provide a power source to an ingestible device. For that method, the electromotive force of the battery should be boosted for storing a large amount of energy. In this study, we have proposed an all-p-channel metal-oxide semiconductor (pMOS)-based cross-coupled voltage multiplier (CCVM) utilizing single-well CMOS technology to achieve a voltage boosting higher than from a conventional complementary MOS (CMOS) CCVM. We prototyped a custom integrated circuit (IC) implemented with the above CCVMs and a ring oscillator as a clock source. The characterization experiment demonstrated that our proposed pMOS-based CCVM can boost the input voltage higher because it avoids the body effect problem resulting from an n-channel MOS transistor. This circuit was also demonstrated to significantly reduce the circuit area on the IC, which is advantageous as it reduces the chip size or provides an area for other functional circuits. This simple circuit structure based on mature and low-cost technologies matches well with disposal applications such as an ingestible device. We believe that this pMOS-based CCVM has the potential to become a useful energy harvesting circuit for ingestible devices.

scholarly journals PVT-Robust CMOS Programmable Chaotic Oscillator: Synchronization of Two 7-Scroll Attractors

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 252 ◽  
Author(s):  
Victor Carbajal-Gomez ◽  
Esteban Tlelo-Cuautle ◽  
Carlos Sanchez-Lopez ◽  
Francisco Fernandez-Fernandez
Keyword(s):  
Integrated Circuit ◽  
Secure Communication ◽  
Piecewise Linear ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Chaotic Attractors ◽  
Chaotic Oscillator ◽  
Maximum Lyapunov Exponent ◽  
Chaotic Oscillators ◽  
Cmos Integrated Circuit

Designing chaotic oscillators using complementary metal-oxide-semiconductor (CMOS) integrated circuit technology for generating multi-scroll attractors has been a challenge. That way, we introduce a current-mode piecewise-linear (PWL) function based on CMOS cells that allow programmable generation of 2–7-scroll chaotic attractors. The mathematical model of the chaotic oscillator designed herein has four coefficients and a PWL function, which can be varied to provide a high value of the maximum Lyapunov exponent. The coefficients are implemented electronically by designing operational transconductance amplifiers that allow programmability of their transconductances. Design simulations of the chaotic oscillator are provided for the 0.35 μ m CMOS technology. Post-layout and process–voltage–temperature (PVT) variation simulations demonstrate robustness of the multi-scroll chaotic attractors. Finally, we highlight the synchronization of two seven-scroll attractors in a master–slave topology by generalized Hamiltonian forms and observer approach. Simulation results show that the synchronized CMOS chaotic oscillators are robust to PVT variations and are suitable for chaotic secure communication applications.

scholarly journals A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 65
Author(s):  
Wenhao Zhi ◽  
Qingxiao Quan ◽  
Pingping Yu ◽  
Yanfeng Jiang
Keyword(s):  
Optical Communication ◽  
Integrated Circuit ◽  
Communication Systems ◽  
Complementary Metal Oxide Semiconductor ◽  
Avalanche Photodiode ◽  
Cmos Technology ◽  
Optical Signal ◽  
Oxide Semiconductor ◽  
Monolithically Integrated ◽  
Process Modification

Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems. In this paper, an avalanche photodiode (APD) is designed and fulfilled, which is compatible with Taiwan Semiconductor Manufacturing Company (TSMC) 45-nm standard complementary metal–oxide–semiconductor (CMOS) technology without any process modification. The APD based on 45 nm process is beneficial to realize a smaller and more complex monolithically integrated optoelectronic chip. The fabricated CMOS APD operates at 850 nm wavelength optical communication. Its bandwidth can be as high as 8.4 GHz with 0.56 A/W responsivity at reverse bias of 20.8 V. Its active area is designed to be 20 × 20 μm2. The Simulation Program with Integrated Circuit Emphasis (SPICE) model of the APD is also proposed and verified. The key parameters are extracted based on its electrical, optical and frequency responses by parameter fitting. The device has wide potential application for optical communication systems.

scholarly journals A 24.88 nV/√Hz Wheatstone Bridge Readout Integrated Circuit with Chopper-Stabilized Multipath Operational Amplifier

2020 ◽  
Vol 10 (1) ◽  
pp. 399 ◽  
Author(s):  
Kwonsang Han ◽  
Hyungseup Kim ◽  
Jaesung Kim ◽  
Donggeun You ◽  
Hyunwoo Heo ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Operational Amplifier ◽  
Wheatstone Bridge ◽  
Input Resistance ◽  
Cmos Technology ◽  
Low Noise ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Readout Integrated Circuit ◽  
Chopper Stabilization

This paper proposes a low noise readout integrated circuit (IC) with a chopper-stabilized multipath operational amplifier suitable for a Wheatstone bridge sensor. The input voltage of the readout IC changes due to a change in input resistance, and is efficiently amplified using a three-operational amplifier instrumentation amplifier (IA) structure with high input impedance and adjustable gain. Furthermore, a chopper-stabilized multipath structure is applied to the operational amplifier, and a ripple reduction loop (RRL) in the low frequency path (LFP) is employed to attenuate the ripple generated by the chopper stabilization technique. A 12-bit successive approximation register (SAR) analog-to-digital converter (ADC) is employed to convert the output voltage of the three-operational amplifier IA into digital code. The Wheatstone bridge readout IC is manufactured using a standard 0.18 µm complementary metal-oxide-semiconductor (CMOS) technology, drawing 833 µA current from a 1.8 V supply. The input range and the input referred noise are ±20 mV and 24.88 nV/√Hz, respectively.

scholarly journals Radiation Assessment of a 15.6ps Single-Shot Time-to-Digital Converter in Terms of TID

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 558 ◽  
Author(s):  
Bjorn Van Bockel ◽  
Jeffrey Prinzie ◽  
Paul Leroux
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Single Shot ◽  
Digital Converter ◽  
Time To Digital Converter ◽  
Pvt Variations ◽  
Radiation Tolerant ◽  
Radiation Measurements

This article presents a radiation tolerant single-shot time-to-digital converter (TDC) with a resolution of 15.6 ps, fabricated in a 65 nm complementary metal oxide semiconductor (CMOS) technology. The TDC is based on a multipath pseudo differential ring oscillator with reduced phase delay, without the need for calibration or interpolation. The ring oscillator is placed inside a Phase Locked Loop (PLL) to compensate for Process, Voltage and Temperature (PVT) variations- and variations due to ionizing radiation. Measurements to evaluate the performance of the TDC in terms of the total ionizing dose (TID) were done. Two different samples were irradiated up to a dose of 2.2 MGy SiO 2 while still maintaining a resolution of 15.6 ps. The TDC has a differential non-linearity (DNL) and integral non-linearity (INL) of 0.22 LSB rms and 0.34 LSB rms respectively.

Integrated Optoelectronic Devices on Silicon

2012 ◽  
Vol 1396 ◽  
Author(s):  
Di Liang ◽  
John E. Bowers
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
High Speed ◽  
High Performance ◽  
Continuous Wave ◽  
Light Emission ◽  
Extinction Ratio ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Pockels Effect

ABSTRACTSilicon (Si) has been the dominating material platform of microelectronics over half century. Continuous technological advances in circuit design and manufacturing enable complementary metal-oxide semiconductor (CMOS) chips with increasingly high integration complexity to be fabricated in an unprecedently scale and economical manner. Conventional Si-based planar lightwave circuits (PLCs) has benefited from advanced CMOS technology but only demonstrate passive functionalities in most circumstances due to poor light emission efficiency and weak major electro-optic effects (e.g., Pockels effect, the Kerr effect and the Franz–Keldysh effect) in Si. Recently, a new hybrid III-V-on-Si integration platform has been developed, aiming to bridge the gap between Si and III-V direct-bandgap materials for active Si photonic integrated circuit applications. Since then high-performance lasers, amplifiers, photodetectors and modulators, etc. have been demonstrated. Here we review the most recent progress on hybrid Si lasers and high-speed hybrid Si modulators. The former include distributed feedback (DFB) lasers showing over 10 mW output power and up to 85 oC continuous-wave (cw) operation, compact hybrid microring lasers with cw threshold less than 4 mA and over 3 mW output power, and 4-channel hybrid Si AWG lasers with channel space of 360 GHz. Recently fabricated traveling-wave electro-absorption modulators (EAMs) and Mach-Zehnder interferometer modulators (MZM) on this platform support 50 Gb/s and 40 Gb/s data transmission with over 10 dB extinction ratio, respectively.

scholarly journals Design and Characteristics of CMOS Inverter based on Multisim and Cadence

2021 ◽  
Vol 2108 (1) ◽  
pp. 012034
Author(s):  
Haoran Xu ◽  
Jianghua Ding ◽  
Jian Dang
Keyword(s):  
Metal Oxide ◽  
Analog Circuits ◽  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Data Converters ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Inverter ◽  
And Performance

Abstract Known as complementary symmetrical metal oxide semiconductor (cos-mos), complementary metal oxide semiconductor is a metal oxide semiconductor field effect transistor (MOSFET) manufacturing process, which uses complementary and symmetrical pairs of p-type and n-type MOSFETs to realize logic functions. CMOS technology is used to build integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS) and other digital logic circuits. CMOS technology is also used in analog circuits, such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for various types of communications. Based on multisim 14.0 and cadence, the characteristics and performance of CMOS inverter are studied by simulation.

scholarly journals Current Measurement Transducer Based on Current-To-Voltage-To-Frequency Converting Ring Oscillator with Cascade Bias Circuit

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 493
Author(s):  
Jongha Park ◽  
Jung-Hyun Park ◽  
Seong-Ook Jung
Keyword(s):  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Measurement Range ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Measurement Transducer ◽  
Current Output ◽  
Differential Nonlinearity ◽  
Rail To Rail

We propose a ring oscillator (RO) based current-to-voltage-to-frequency (I–V–F) converting current transducer with a cascade bias circuit. The I–V–F converting scheme guarantees highly stable biasing against RO, with a rail-to-rail output operation. This device was fabricated using National NanoFab Center (NNFC) 180 nm complementary metal-oxide-semiconductor (CMOS) technology, which achieves a current resolution of 1 nA in a measurement range up to 200 nA. A noise floor of 11.8 pA/√Hz, maximum differential nonlinearity (DNL) of 0.15 in 1 nA steps, and rail-to-rail output with a 1.8 V power supply is achieved. The proposed transducer can be effectively applied to bio-sensing devices requiring a compact area and low power consumption with a low current output. The fabricated structure can be applied to monolithic-three-dimensional integration with a bio-sensing device.

scholarly journals An Interface ASIC for MEMS Vibratory Gyroscopes with Nonlinear Driving Control

Micromachines ◽  
2019 ◽  
Vol 10 (4) ◽  
pp. 270 ◽  
Author(s):  
Risheng Lv ◽  
Qiang Fu ◽  
Liang Yin ◽  
Yuan Gao ◽  
Wei Bai ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Resonance Oscillation ◽  
Temperature Drift ◽  
Sigma Delta ◽  
Vibratory Gyroscopes ◽  
Digital Circuitry ◽  
Mems Vibratory Gyroscopes

This paper proposes an interface application-specific-integrated-circuit (ASIC) for micro-electromechanical systems (MEMS) vibratory gyroscopes. A closed self-excited drive loop is employed for automatic amplitude stabilization based on peak detection and proportion-integration (PI) controller. A nonlinear multiplier terminating the drive loop is designed for rapid resonance oscillation and linearity improvement. Capacitance variation induced by mechanical motion is detected by a differential charge amplifier in sense mode. After phase demodulation and low-pass filtering an analog signal indicating the input angular velocity is obtained. Non-idealities are further suppressed by on-chip temperature drift calibration. In order for better compatibility with digital circuitry systems, a low passband incremental zoom sigma-delta (ΣΔ) analog-to-digital converter (ADC) is implemented for digital output. Manufactured in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, the whole interface occupies an active area of 3.2 mm2. Experimental results show a bias instability of 2.2 °/h and a nonlinearity of 0.016% over the full-scale range.

Wireless Transceiver for Three-Dimensional Integrated Circuits Using a Ring Oscillator

2019 ◽  
Vol 29 (10) ◽  
pp. 2050161
Author(s):  
Dongwoo Moon ◽  
Milim Lee ◽  
Changhyun Lee ◽  
Joung-Hu Park ◽  
Changkun Park
Keyword(s):  
Integrated Circuits ◽  
Three Dimensional ◽  
Digital Signal ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Voltage Multiplier ◽  
Wireless Transceiver ◽  
Pulse Type

In this paper, we propose an oscillation-type transceiver for wireless chip-to-chip communication (WCC). The proposed transceiver is composed of a ring oscillator, coils, inverter-type amplifier, voltage multiplier and comparator. The ring oscillator itself acts as the on–off keying (OOK) modulator. The envelope of the transferred OOK-modulated signal is detected in the voltage multiplier of the receiver. Given that the proposed transceiver uses an OOK-modulated oscillating signal, the noise immunity is improved compared to the typical pulse-type transceiver. To verify the functionality of the proposed transceiver, we design the transceiver using the 180-nm complementary metal-oxide-semiconductor process. From the measured results, we verify that the proposed transceiver recovers the entered digital signal up to a distance of 0.2[Formula: see text]mm between the primary and secondary coils. Additionally, the sensitivity to the bias voltage of the latch is nonexistent by virtue of removing the latch in the proposed transceiver.

Fabrication of microbridges in standard complementary metal oxide semiconductor technology

1989 ◽  
Vol 67 (4) ◽  
pp. 184-189 ◽  
Author(s):  
M. Parameswaran ◽  
Lj. Ristic ◽  
A. C. Dhaded ◽  
H. P. Baltes ◽  
W. Allegretto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Layout Design ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Digital Cmos ◽  
Sensor Applications

Complementary metal oxide semiconductor (CMOS) technology is one of the leading fabrication technologies of the semiconductor integrated-circuit industry. We have discovered features inherent in the standard CMOS fabrication process that lend themselves to the manufacturing of micromechanical structures for sensor applications. In this paper we present an unconventional layout design methodology that allows us to exploit the standard CMOS process for producing microbridges. Two types of microbridges, bare polysilicon microbridges and sandwiched oxide microbridges, have been manufactured by first implementing a special layout design in an industrial digital CMOS process, followed by a postprocessing etching step.

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