scholarly journals Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide Pretreatment

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1601
Author(s):  
Xing Wang ◽  
Hongxia Liu ◽  
Lu Zhao ◽  
Yongte Wang
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Breakdown Field ◽  
Gate Leakage Current ◽  
Interface Engineering ◽  
Order Of Magnitude ◽  
Mis Capacitor ◽  
The Impact ◽  
Breakdown Field Strength ◽  
Gate Leakage Current Density

The impact of stress relieved preoxide (SRPO) interface engineering on the physical and electrical properties of LaxAlyO films was investigated. It was proved that the SRPO pretreatment has little influence on the surface morphology of LaxAlyO films and the chemical bond composition of LaxAlyO/Si interface. However, the SRPO pretreated MIS capacitor displayed obvious improvement in decreasing the amount of trapped oxide charges and interfacial traps. As a result, a reduction of more than one order of magnitude in the gate leakage current density was obtained. The breakdown field strength and TDDB reliability of the LaxAlyO film treated with SRPO were also enhanced.

Electrical Properties of a TiO2-SrO Varistor System

2014 ◽  
Vol 975 ◽  
pp. 168-172
Author(s):  
Tiago Delbrücke ◽  
Igor Schmidt ◽  
Sergio Cava ◽  
Vânia Caldas Sousa
Keyword(s):  
Titanium Dioxide ◽  
Electrical Properties ◽  
Field Strength ◽  
Leakage Current ◽  
Low Voltage ◽  
Nonlinear Coefficient ◽  
Breakdown Field ◽  
Strontium Oxide ◽  
Breakdown Field Strength

The addition of different dopants affects the densification and electrical properties of TiO2 based varistor ceramics. The nonlinear current (I) and voltage (V) characteristics of titanium dioxide are examined when doped with small quantities (0.5-2 at.%) of strontium oxide. This paper discusses the electrical properties of such an SrO doped TiO2 system, and demonstrates that some combinations produce electrical properties suitable for use as low voltage varistors. The high value of the nonlinear coefficient (α) (6.6), the breakdown field strength (Eb) (328 V/cm) and the leakage current (Ir) (0.22 mA/cm2) obtained in a system newly doped with SrO, are all adequate properties for application in low voltage varistors.

Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition

2010 ◽  
Vol 25 (10) ◽  
pp. 1898-1903 ◽  
Author(s):  
Yongchan Kim ◽  
Sanghyun Woo ◽  
Hyungchul Kim ◽  
Jaesang Lee ◽  
Honggyu Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Breakdown Field ◽  
Remote Plasma ◽  
Lanthanum Hydroxide ◽  
Oh Groups ◽  
Capping Layer ◽  
Layer Deposition ◽  
Current Densities

The physical and electrical properties of La2O3 with and without an Al2O3 capping layer deposited by remote plasma atomic layer deposition were investigated. The electrical properties of the La2O3 films degraded due to the formation of lanthanum hydroxide after being exposed to air. The results of x-ray photoemission spectroscopy showed that the quantity of OH groups absorbed increased after exposure to air. For La2O3 with an Al2O3 capping layer, however, the electrical properties of the film did not change substantially because the capping layer effectively suppressed the formation of lanthanum hydroxide. The capacitance of the La2O3 decreased more than 30% after exposure to air, while La2O3 with an Al2O3 capping layer decreased by only about 4%. The VFB value of the La2O3 with an Al2O3 capping layer was near zero, and the hysteresis was about 120 mV. The leakage current densities of the film were maintained below 5 × 10−7 A/cm2 up to −15 MV/cm and the effective breakdown field was about −23.5 MV/cm.

Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs

2009 ◽  
Vol 1155 ◽  
Author(s):  
Rahul Suri ◽  
Daniel J Lichtenwalner ◽  
Veena Misra
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
X Ray ◽  
Layer Deposition ◽  
Post Deposition ◽  
Gallium Oxides

AbstractThe interface and electrical properties of HfAlO dielectric formed by atomic layer deposition (ALD) on sulfur-passivated GaAs were investigated. X-ray photoelectron spectroscopy (XPS) revealed the absence of arsenic oxides at the HfAlO/GaAs interface after dielectric growth and post-deposition annealing at 500 °C. A minimal increase in the amount of gallium oxides at the interface was detected between the as-deposited and annealed conditions highlighting the effectiveness of HfAlO in suppressing gallium oxide formation. An equivalent oxide thickness (EOT) of ∼ 2 nm has been achieved with a gate leakage current density of less than 10-4 A/cm2. These results testify a good dielectric interface with minimal interfacial oxides and open up potential for further investigation of HfAlO/GaAs gate stack properties to determine its viability for n-channel MOSFETs.

scholarly journals Investigation of Electrical Properties of BiFeO3/LDPE Nanocomposite Dielectrics with Magnetization Treatments

Polymers ◽  
2021 ◽  
Vol 13 (16) ◽  
pp. 2622
Author(s):  
Wei Song ◽  
Yu Sun ◽  
Tian-Jiao Yu ◽  
Yu-Zhang Fan ◽  
Zhi Sun ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Room Temperature ◽  
Breakdown Strength ◽  
Bismuth Ferrite ◽  
Breakdown Field ◽  
Melt Blending ◽  
Blending Method ◽  
Different Temperatures ◽  
Breakdown Field Strength

The purpose of this paper is to study the effect of nano-bismuth ferrite (BiFeO3) on the electrical properties of low-density polyethylene (LDPE) under magnetic-field treatment at different temperatures. BiFeO3/LDPE nanocomposites with 2% mass fraction were prepared by the melt-blending method, and their electrical properties were studied. The results showed that compared with LDPE alone, nanocomposites increased the crystal concentration of LDPE and the spherulites of LDPE. Filamentous flake aggregates could be observed. The spherulite change was more obvious under high-temperature magnetization. An agglomerate phenomenon appeared in the composite, and the particle distribution was clear. Under high-temperature magnetization, BiFeO3 particles were increased and showed a certain order, but the change for room-temperature magnetization was not obvious. The addition of BiFeO3 increased the crystallinity of LDPE. Although the crystallinity decreased after magnetization, it was higher than that of LDPE. An AC test showed that the breakdown strength of the composite was higher than that of LDPE. The breakdown strength increased after magnetization. The increase of breakdown strength at high temperature was less, but the breakdown field strength of the composite was higher than that of LDPE. Compared with LDPE, the conductive current of the composite was lower. So, adding BiFeO3 could improve the dielectric properties of LDPE. The current of the composite decayed faster with time. The current decayed slowly after magnetization.

Pound Wise and Penny Foolish? Weight Loss and The Dynamics of Health Care Spending

2011 ◽  
Vol 14 (2) ◽  
Author(s):  
Thomas G Koch
Keyword(s):  
Weight Loss ◽  
Cost Savings ◽  
Cost Effective ◽  
Economic Consequences ◽  
Health Care Spending ◽  
Order Of Magnitude ◽  
Dynamic Measures ◽  
The Cost ◽  
The Impact ◽  
The Relationship

Current estimates of obesity costs ignore the impact of future weight loss and gain, and may either over or underestimate economic consequences of weight loss. In light of this, I construct static and dynamic measures of medical costs associated with body mass index (BMI), to be balanced against the cost of one-time interventions. This study finds that ignoring the implications of weight loss and gain over time overstates the medical-cost savings of such interventions by an order of magnitude. When the relationship between spending and age is allowed to vary, weight-loss attempts appear to be cost-effective starting and ending with middle age. Some interventions recently proven to decrease weight may also be cost-effective.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

scholarly journals Investigation of the functional network modifier loading on the stoichiometric ratio of epoxy resins and their dielectric properties

2021 ◽  
Author(s):  
Istebreq A. Saeedi ◽  
Sunny Chaudhary ◽  
Thomas Andritsch ◽  
Alun S. Vaughan
Keyword(s):  
Glass Transition ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Epoxy Resins ◽  
Functional Network ◽  
Cross Linking ◽  
Network Modifier ◽  
Epoxy Resin System ◽  
The Cross ◽  
The Impact

AbstractReactive molecular additives have often been employed to tailor the mechanical properties of epoxy resins. In addition, several studies have reported improved electrical properties in such systems, where the network architecture and included function groups have been modified through the use of so-called functional network modifier (FNM) molecules. The study reported here set out to investigate the effect of a glycidyl polyhedral oligomeric silsesquioxane (GPOSS) FNM on the cross-linking reactions, glass transition, breakdown strength and dielectric properties of an amine-cured epoxy resin system. Since many previous studies have considered POSS to act as an inorganic filler, a key aim was to consider the impact of GPOSS addition on the stoichiometry of curing. Fourier transform infrared spectroscopy revealed significant changes in the cross-linking reactions that occur if appropriate stoichiometric compensation is not made for the additional epoxide groups present on the GPOSS. These changes, in concert with the direct effect of the GPOSS itself, influence the glass transition temperature, dielectric breakdown behaviour and dielectric response of the system. Specifically, the work shows that the inclusion of GPOSS can result in beneficial changes in electrical properties, but that these gains are easily lost if consequential changes in the matrix polymer are not appropriately counteracted. Nevertheless, if the system is appropriately optimized, materials with pronounced improvements in technologically important characteristics can be designed.

Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0-0.3)

2021 ◽  
Author(s):  
Woohui Lee ◽  
Changmin Lee ◽  
Jinyong Kim ◽  
Jehoon Lee ◽  
Deokjoon Eom ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Treatment ◽  
Atomic Layer ◽  
Alloy Film ◽  
Electrical Characteristics

To understand the effect of H2S pre-annealing treatment on a Si1-xGex alloy film, the interfacial and electrical characteristics of atomic-layer-deposited HfO2/Si1-xGex were studied while varying the Ge concentration (x value)...

scholarly journals Ice Coverage Induced by Depositing a Water Drop onto the Supercooled Substrate at Extreme Low Vapor Pressure

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 691
Author(s):  
Yugang Zhao ◽  
Zichao Zuo ◽  
Haibo Tang ◽  
Xin Zhang
Keyword(s):  
Vapor Pressure ◽  
Substrate Temperature ◽  
Water Drop ◽  
Industrial Processes ◽  
Aircraft Icing ◽  
Ice Coverage ◽  
Fundamental Understanding ◽  
Order Of Magnitude ◽  
The Impact ◽  
Kinetics Of

Icing/snowing/frosting is ubiquitous in nature and industrial processes, and the accretion of ice mostly leads to catastrophic consequences. The existing understanding of icing is still limited, particularly for aircraft icing, where direct observation of the freezing dynamics is inaccessible. In this work, we investigate experimentally the impact and freezing of a water drop onto the supercooled substrate at extremely low vapor pressure, to mimic an aircraft passing through clouds at a relatively high altitude, engendering icing upon collisions with pendant drops. Special attention is focused on the ice coverage induced by an impinging drop, from the perimeter pointing outward along the radial direction. We observed two freezing regimes: (I) spread-recoil-freeze at the substrate temperature of Ts = −15.4 ± 0.2 °C and (II) spread (incomplete)-freeze at the substrate temperature of Ts = −22.1 ± 0.2 °C. The ice coverage is approximately one order of magnitude larger than the frozen drop itself, and counterintuitively, larger supercooling yields smaller ice coverage in the range of interest. We attribute the variation of ice coverage to the kinetics of vapor diffusion in the two regimes. This fundamental understanding benefits the design of new anti-icing technologies for aircraft.

Enhanced thermoelectric properties of atomic-layer-deposited Hf:Zn16O/18O superlattice films by interface-engineering

2020 ◽  
Vol 46 (6) ◽  
pp. 7122-7130
Author(s):  
Bo-Wei Shih ◽  
Wen-Pin Hsieh ◽  
Jing-Jong Shyue ◽  
Feng-Yu Tsai
Keyword(s):  
Thermoelectric Properties ◽  
Atomic Layer ◽  
Interface Engineering
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