scholarly journals Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6066
Author(s):  
Tomasz Wejrzanowski ◽  
Emil Tymicki ◽  
Tomasz Plocinski ◽  
Janusz Józef Bucki ◽  
Teck Leong Tan
Keyword(s):  
Ion Beam ◽  
Pressure Sensors ◽  
Chemical Vapor ◽  
Gauge Factor ◽  
X Ray Diffraction ◽  
Resistance Change ◽  
Piezoresistive Pressure Sensor ◽  
Structures And Properties ◽  
Specific Geometry ◽  
Focus Ion Beam

Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and properties were analyzed using X-ray diffraction, SEM, and Hall measurements. The samples in the form of a beam were also prepared and strained (bent) to measure the resistance change (Gauge Factor). Based on the results obtained for bulk materials, piezoresistive thin films on 6H-SiC and 4H-SiC substrate were fabricated by Chemical Vapor Deposition (CVD). Such materials were shaped by Focus Ion Beam (FIB) into pressure sensors with a specific geometry. The characteristics of the sensors made from different materials under a range of pressures and temperatures were obtained and are presented herewith.

Development of Electrostatic Actuated Nano Tensile Testing Device for Mechanical and Electrical Characteristics of FIB Deposited Carbon Nanowire

2006 ◽  
Vol 924 ◽  
Author(s):  
Mario Kiuchi ◽  
Shinji Matsui ◽  
Yoshitada Isono
Keyword(s):  
Ion Beam ◽  
Tensile Load ◽  
Chemical Vapor ◽  
Tensile Tests ◽  
Carbon Films ◽  
Uniaxial Tensile ◽  
Resistance Change ◽  
Carbon Nanowire ◽  
Focus Ion Beam ◽  
Carbon Nanowires

ABSTRACTThis research develops Electrostatic Actuated NAno Tensile testing devices (EANATs) to evaluate mechanical and electrical properties of carbon nanowires fabricated by focus ion beam- assisted chemical vapor deposition (FIB-CVD). This research carried out nanoscale uniaxial tensile tests for 90 nm- to 150 nm-diametric carbon nanowires using EANATs. Young's modulus of cabon nanowires averaged 58 GPa, which was close to that of hydrogenated diamond-like carbon films. On average, fracture stress and strain of carbon nanowires reached values of 4.2 GPa and 0.08, respectively. This research also measured I-V characteristics of 100 nm-diametric carbon nanowires under tensile loading to reveal the piezo resistivity of nanowires. The piezoresistive effect of carbon nanowire was observed. The tensile load was about 0.75 GPa at maximum value of the resistance change.

Effect of Stress State of Different Tin Films on Their Tribological Behavior

1998 ◽  
Vol 120 (4) ◽  
pp. 820-828 ◽  
Author(s):  
Zhuang Daming ◽  
Liu Jiajun ◽  
Zhu Baoliang ◽  
Zhou Zhong-Rong ◽  
Leo Vincent ◽  
...  
Keyword(s):  
Stress State ◽  
Tribological Behavior ◽  
Steel Substrate ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
Tin Films ◽  
Plasma Chemical Vapor Deposition ◽  
Tin Film

Titanium nitride films were deposited by the methods of ion beam enhanced deposition (IBED), plasma chemical vapor deposition (PCVD) and ion plating (IP). X-ray diffraction analysis was employed to determine the internal stress state of TiN film and 52100 steel substrate at both sides of the interface. The effect of stress state on their bonding strength and tribological behavior was analyzed systematically, their wear and failure mechanisms were discussed in detail as well.

scholarly journals Characterization of Highly-Oriented Ferroelectric PbxBa1−x TiO3 Thin Films Grown by Metalorganic Chemical Vapor Deposition

2005 ◽  
Vol 20 (11) ◽  
pp. 2969-2976 ◽  
Author(s):  
Mohamed Y. El-Naggar ◽  
David A. Boyd ◽  
David G. Goodwin
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Domain Walls ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Domain Boundaries

PbxBa1−xTiO3 (0.2 ⩽ x ⩽ 1) thin films were deposited on single-crystal MgO as well as amorphous Si3N4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD). The ferroelectric films were stoichiometric and highly oriented, with only (001) and (100) orientations evident in x-ray diffraction (XRD) scans. Films on biaxially textured templates had smaller grains (60 nm average) than those deposited on single-crystal MgO (300 nm average). Electron backscatter diffraction (EBSD) has been used to study the microtexture on both types of substrates and the results were consistent with x-ray pole figures and transmission electron microscopy (TEM) micrographs that indicated the presence of 90° domain boundaries, twins, in films deposited on single-crystal MgO substrates. In contrast, films on biaxially textured substrates consisted of small single-domain grains that were either c or a oriented. The surface-sensitive EBSD technique was used to measure the tetragonal tilt angle as well as in-plane and out-of-plane texture. High-temperature x-ray diffraction (HTXRD) of films with 90° domain walls indicated large changes, as much as 60%, in the c and a domain fractions with temperature, while such changes were not observed for PbxBa1−xTiO3 (PBT) films on biaxially textured MgO/Si3N4/Si substrates, which lacked 90° domain boundaries.

Degradation of AlGaN/GaN Light Emitting Diodes caused by Carbon Contamination with Reverse-bias Stress Test in Water Vapor

2016 ◽  
Vol 19 (1) ◽  
pp. 011-013
Author(s):  
Hsiang Chen ◽  
Yun Yang He ◽  
Min Han Lin ◽  
Shang Ren Lin ◽  
Sheng-Hao Hung ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Ion Beam ◽  
Stress Test ◽  
Forward Bias ◽  
X Ray Diffraction ◽  
Carbon Contamination ◽  
Light Emitting ◽  
Bias Stress ◽  
Focus Ion Beam

Resolving failure origins of AlGaN/GaN light emitting diodes (LED) has received intensive study recently. In this study, formation of GaCO3 caused by carbon contamination may result in deformation of the electrode near the surface and degrade the device. The electrochemical reactions may cause device damages. Degradation in electrical properties is observed in I-V characteristics. Forward-bias and reverse-bias EL images are used to trace the damaged areas. Furthermore, focus ion beam (FIB), scanning electron microscope (SEM), energy dispersive X-ray diffraction (EDX) are applied to examine the damaged areas. Results indicate that formation of GaCO3 may deform the electrode, generate the reverse-bias EL and cause the degradation.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Focused Ion Beam (FIB) Method for Reconditioning Worn Tungsten Atomic Force Probe (AFP) Tips

2005 ◽  
Author(s):  
Randal E. Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Minimal Amount ◽  
Atomic Force ◽  
Focus Ion Beam

Abstract Atomic force probing (AFP) uses very sharp tungsten tips (100nm in radius) which wear out rather quickly, even with the greater durability of tungsten as compared to silicon. This paper demonstrates how worn tips that no longer image and probe properly can be reconditioned using the focus ion beam (FIB) tool. The method works best for tips that are under approx. 750nm in diameter and are not bent. It works well for freshly manufactured tips that do not work properly due to mishandling or improper storage which allowed particulates/oxide to build up on the tip. The method also works well for fresh tips that have been worn down (or slightly bent) after several hours of scanning and probing. This method is straightforward and requires a minimal amount of time. Typically, four probe tips can be reconditioned in about 30 minutes on the FIB.

scholarly journals Mitigating the Agglomeration of Nanofiller in a Mixed Matrix Membrane by Incorporating an Interface Agent

Membranes ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 328
Author(s):  
Manh-Tuan Vu ◽  
Gloria M. Monsalve-Bravo ◽  
Rijia Lin ◽  
Mengran Li ◽  
Suresh K. Bhatia ◽  
...  
Keyword(s):  
Gas Separation ◽  
Polymer Matrix ◽  
Ion Beam ◽  
High Surface ◽  
Mixed Matrix Membrane ◽  
Mechanical And Thermal Properties ◽  
Separation Membranes ◽  
Surface Areas ◽  
Separation Membrane ◽  
Focus Ion Beam

Nanodiamonds (ND) have recently emerged as excellent candidates for various applications including membrane technology due to their nanoscale size, non-toxic nature, excellent mechanical and thermal properties, high surface areas and tuneable surface structures with functional groups. However, their non-porous structure and strong tendency to aggregate are hindering their potential in gas separation membrane applications. To overcome those issues, this study proposes an efficient approach by decorating the ND surface with polyethyleneimine (PEI) before embedding it into the polymer matrix to fabricate MMMs for CO2/N2 separation. Acting as both interfacial binder and gas carrier agent, the PEI layer enhances the polymer/filler interfacial interaction, minimising the agglomeration of ND in the polymer matrix, which is evidenced by the focus ion beam scanning electron microscopy (FIB-SEM). The incorporation of PEI into the membrane matrix effectively improves the CO2/N2 selectivity compared to the pristine polymer membranes. The improvement in CO2/N2 selectivity is also modelled by calculating the interfacial permeabilities with the Felske model using the gas permeabilities in the MMM. This study proposes a simple and effective modification method to address both the interface and gas selectivity in the application of nanoscale and non-porous fillers in gas separation membranes.

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