scholarly journals Electrodeposition of Cu on PEDOT for a Hybrid Solid-State Electronic Device

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 157-168
Author(s):  
Martina Vizza ◽  
Giulio Pappaianni ◽  
Walter Giurlani ◽  
Andrea Stefani ◽  
Roberto Giovanardi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Device ◽  
Base Material ◽  
Electrical Impedance Spectroscopy ◽  
Electrode Surfaces ◽  
Ohmic Behavior ◽  
Tight Contact ◽  
Wide Range ◽  
Electrochemically Deposited ◽  
Ito Thin Films

Conductive polymers are nowadays attracting great attention for their peculiar mechanical, electrical and optical proprieties. In particular, PEDOT can be used in a wide range of innovative applications, from electroluminescent devices to photovoltaics. In this work, the electrochemical deposition of 3,4 ethylenedioxythiophene (EDOT) was performed on various substrates (ITO, thin films of gold and palladium on silicon wafers) by means of both potentiostatic and potentiodynamic techniques. This was intended to further expand the applications of electrochemically deposited PEDOT, particularly regarding the preparation of thin films in tight contact with electrode surfaces. This allows one to obtain systems prone to be used as electrodes in stacked devices. Chronoamperometric experiments were performed to study the nucleation and growth process of PEDOT. SEM, ESEM and AFM analysis allowed the characterization of the morphology of the polymeric films obtained. Raman and visible spectroscopy confirmed the high-quality of the coatings on the different substrates. Then, the PEDOT films were used as the base material for the further electrodeposition of a copper layer. In this way, a hybrid electronic device was obtained, by using electrochemical methods only. The high conductivity and ohmic behavior of the device were confirmed over a wide range of frequencies with electrical impedance spectroscopy analysis.

Spray Deposited Thin Films of Tin-Doped Indium Oxide for Optoelectronic Applications

2013 ◽  
Vol 677 ◽  
pp. 173-178 ◽  
Author(s):  
Oleksandr Malik ◽  
F.J. de la Hidalga-W
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Oxide ◽  
Electrical And Optical Properties ◽  
Conducting Electrode ◽  
Wide Range ◽  
Ito Thin Films ◽  
Optoelectronic Applications ◽  
Ito Films

The structural, electrical, and optical properties of spray deposited tin-doped indium oxide (ITO) films are reported in this work. The films have excellent properties, as a transparent and conducting electrode, for applications in a wide range of areas of optoelectronics such as photodetection and photovoltaic. One example of the ITO thin films application in semiconductor-insulating-semiconductor (SIS) efficient solar cells and modules is shown.

Wide-range tuning of optical constants in DC sputtered MoS2/ITO thin films

2021 ◽  
Author(s):  
Muhammad Ahmed Khan ◽  
Murtaza Saleem ◽  
Shahid M. Ramay ◽  
Syed Kumail Abbas ◽  
Hamid M. Shaikh ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Wide Range ◽  
Ito Thin Films

Quantitative Image Analysis of Fractal-like Thin Films of Organic Semiconductors

2018 ◽  
Author(s):  
Weikun Zhu ◽  
Erfan Mohammadi ◽  
Ying Diao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Analysis ◽  
Fractal Dimension ◽  
Organic Semiconductors ◽  
Film Growth ◽  
Electronic Device ◽  
Significant Control ◽  
Semiconductor Thin Films ◽  
Two Parameters

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.

scholarly journals Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 153
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Young's Modulus ◽  
Heating Temperature ◽  
Glass Substrates ◽  
Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

scholarly journals A Slot-Die Technique for the Preparation of Continuous, High-Area, Chitosan-Based Thin Films

Polymers ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 1566
Author(s):  
Oliver J. Pemble ◽  
Maria Bardosova ◽  
Ian M. Povey ◽  
Martyn E. Pemble
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
High Volume ◽  
Mechanical Anisotropy ◽  
Diverse Range ◽  
Direction Parallel ◽  
High Area ◽  
Wide Range ◽  
Slot Die ◽  
Potential Applications

Chitosan-based films have a diverse range of potential applications but are currently limited in terms of commercial use due to a lack of methods specifically designed to produce thin films in high volumes. To address this limitation directly, hydrogels prepared from chitosan, chitosan-tetraethoxy silane, also known as tetraethyl orthosilicate (TEOS) and chitosan-glutaraldehyde have been used to prepare continuous thin films using a slot-die technique which is described in detail. By way of preliminary analysis of the resulting films for comparison purposes with films made by other methods, the mechanical strength of the films produced was assessed. It was found that as expected, the hybrid films made with TEOS and glutaraldehyde both show a higher yield strength than the films made with chitosan alone. In all cases, the mechanical properties of the films were found to compare very favorably with similar measurements reported in the literature. In order to assess the possible influence of the direction in which the hydrogel passes through the slot-die on the mechanical properties of the films, testing was performed on plain chitosan samples cut in a direction parallel to the direction of travel and perpendicular to this direction. It was found that there was no evidence of any mechanical anisotropy induced by the slot die process. The examples presented here serve to illustrate how the slot-die approach may be used to create high-volume, high-area chitosan-based films cheaply and rapidly. It is suggested that an approach of the type described here may facilitate the use of chitosan-based films for a wide range of important applications.

scholarly journals Morphology Dependent Interaction between Co(II)-tetraphenylporphyrin and the MgO(100) surface

2021 ◽  
Author(s):  
Silviya Ninova ◽  
Osman Baris Malcioglu ◽  
Philipp Auburger ◽  
Matthias Franke ◽  
Ole Lytken ◽  
...  
Keyword(s):  
Hybrid Systems ◽  
Electronic Device ◽  
Inorganic Hybrid ◽  
Wide Range ◽  
Device Properties ◽  
Dependent Interaction

Porphyrins are key elements in organic-inorganic hybrid systems for a wide range of applications. Understanding their interaction with the substrate gives a handle on structural and electronic device properties. Here...

scholarly journals High quality ITO thin films grown by dc and RF sputtering without oxygen

2010 ◽  
Vol 43 (5) ◽  
pp. 055402 ◽  
Author(s):  
Ocal Tuna ◽  
Yusuf Selamet ◽  
Gulnur Aygun ◽  
Lutfi Ozyuzer
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
High Quality ◽  
Ito Thin Films

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

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