scholarly journals Design and Analysis of Multipliers using Radix-8 Booth Encoding Technique for Low Power and Area Consumption

2019 ◽  
Vol 9 (2) ◽  
pp. 2630-2635
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Low Power Design ◽  
Low Complexity ◽  
Approximate Computing ◽  
New Methodologies ◽  
Power Delay Product ◽  
Booth Encoder ◽  
Complex Multiplier

As innovation scaling is arriving at its points of confinement, new methodologies have been proposed for computational efficiency. Different techniques have been proposed with advancements in technology to model high-speed along with low power consumption and smaller area multipliers. For the radix-4 booth propagation algorithm for low-power and low complexity applications, an efficient approximate 8 bit redundant multiplier is used. To minimize the complication present in modified booth encoder, approximate Booth RB encoders have been introduced by modifying the truth table with incorrect bits, which resulted in a reduction of the power delay product. Approximate computing is a relevant technique for low power and high performance circuits as used in error-tolerant applications. Approximate or inexact computing is an attractive design methodology for low power design but accomplished by loosening up the necessity of precision. It becomes critical to maintain full accuracy to attain reduced power utilization. In this paper, the design of approximate redundant binary (RB) multipliers is studied and modified to build less complex multiplier with Radix-8 modified booth encoding technique to reduce area and complexities of architectures.

scholarly journals Design and Analysis of Low-Power and High Speed Approximate Adders Using CNFETs

Sensors ◽  
2021 ◽  
Vol 21 (24) ◽  
pp. 8203
Author(s):  
Avireni Bhargav ◽  
Phat Huynh
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Supply Voltage ◽  
Average Power ◽  
Propagation Delay ◽  
Approximate Computing ◽  
Effect Transistor ◽  
Developing Area ◽  
Power Delay Product

Adders are constituted as the fundamental blocks of arithmetic circuits and are considered important for computation devices. Approximate computing has become a popular and developing area, promising to provide energy-efficient circuits with low power and high performance. In this paper, 10T approximate adder (AA) and 13T approximate adder (AA) designs using carbon nanotube field-effect transistor (CNFET) technology are presented. The simulation for the proposed 10T approximate adder and 13T approximate adder designs were carried out using the HSPICE tool with 32 nm CNFET technology. The metrics, such as average power, power-delay product (PDP), energy delay product (EDP) and propagation delay, were carried out through the HSPICE tool and compared to the existing circuit designs. The supply voltage Vdd provided for the proposed circuit designs was 0.9 V. The results indicated that among the existing full adders and approximate adders found in the review of adders, the proposed circuits consumed less PDP and minimum power with more accuracy.

Performance Analysis of Various Multipliers Using 8T-full Adder with 180nm Technology

2020 ◽  
Vol 13 (6) ◽  
pp. 864-870
Author(s):  
Sai Venkatramana Prasada G.S ◽  
G. Seshikala ◽  
S. Niranjana
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Fundamental Operation ◽  
Wallace Tree ◽  
Power Delay Product ◽  
The Comparative Study ◽  
Wallace Tree Multiplier

Background: This paper presents the comparative study of power dissipation, delay and power delay product (PDP) of different full adders and multiplier designs. Methods: Full adder is the fundamental operation for any processors, DSP architectures and VLSI systems. Here ten different full adder structures were analyzed for their best performance using a Mentor Graphics tool with 180nm technology. Results: From the analysis result high performance full adder is extracted for further higher level designs. 8T full adder exhibits high speed, low power delay and low power delay product and hence it is considered to construct four different multiplier designs, such as Array multiplier, Baugh Wooley multiplier, Braun multiplier and Wallace Tree multiplier. These different structures of multipliers were designed using 8T full adder and simulated using Mentor Graphics tool in a constant W/L aspect ratio. Conclusion: From the analysis, it is concluded that Wallace Tree multiplier is the high speed multiplier but dissipates comparatively high power. Baugh Wooley multiplier dissipates less power but exhibits more time delay and low PDP.

scholarly journals Low power design of ultra wideband PLL using 90 nm CMOS technology

2020 ◽  
Vol 20 (2) ◽  
pp. 727
Author(s):  
Fadhilah Binti Noor Al Amin ◽  
Nabihah Ahmad ◽  
Siti Hawa Ruslan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Large Scale ◽  
Vlsi Design ◽  
Electronic System ◽  
Low Power Design ◽  
Cmos Technology ◽  
Ultra Wideband

<span>The rapid growth of the electronic system has become one of the challenges in the high performance of Very Large Scale Integration (VLSI) design and has contributed to the evolution of Phase Locked Loop (PLL) system design as one of the inevitable and significant necessities in the modern days. This design focus on the development of PLL system that can operate at a high performance within the Ultra-Wideband (UWB) frequency but consume low power that may be useful for future device implementation in the communication system. All proposed sub modules of PLL is highly suitable for low power and high speed application as each of them consumes overall power consumption around 2 µW until 1 mW with frequency from 3.1 GHz to 10.6 GHz. All the design architecture, schematic, simulation and analysis are implemented using Synopsys Tool in 90 nm CMOS technology. Through the overall analysis, it can be concluded that this proposed sub modules design of the PLL system has better performance compared to previous work in terms of power consumption and frequency.</span>

scholarly journals Ultracompact and low-power-consumption silicon thermo-optic switch for high-speed data

Nanophotonics ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 937-945
Author(s):  
Ruihuan Zhang ◽  
Yu He ◽  
Yong Zhang ◽  
Shaohua An ◽  
Qingming Zhu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Pulse Amplitude ◽  
Telecommunication Networks ◽  
Low Power Consumption ◽  
Power Efficient ◽  
High Speed Data ◽  
On Chip

AbstractUltracompact and low-power-consumption optical switches are desired for high-performance telecommunication networks and data centers. Here, we demonstrate an on-chip power-efficient 2 × 2 thermo-optic switch unit by using a suspended photonic crystal nanobeam structure. A submilliwatt switching power of 0.15 mW is obtained with a tuning efficiency of 7.71 nm/mW in a compact footprint of 60 μm × 16 μm. The bandwidth of the switch is properly designed for a four-level pulse amplitude modulation signal with a 124 Gb/s raw data rate. To the best of our knowledge, the proposed switch is the most power-efficient resonator-based thermo-optic switch unit with the highest tuning efficiency and data ever reported.

LOW-POWER, PARALLEL INTERFACE WITH CONTINUOUS-TIME ADAPTIVE PASSIVE EQUALIZER AND CROSSTALK CANCELLATION

2005 ◽  
Vol 15 (02) ◽  
pp. 459-476
Author(s):  
C. PATRICK YUE ◽  
JAEJIN PARK ◽  
RUIFENG SUN ◽  
L. RICK CARLEY ◽  
FRANK O'MAHONY
Keyword(s):  
Low Power ◽  
Electromagnetic Interference ◽  
Continuous Time ◽  
High Speed ◽  
High Performance ◽  
Process Variations ◽  
Cmos Process ◽  
Power Circuit ◽  
Crosstalk Cancellation ◽  
Circuit Components

This paper presents the low-power circuit techniques suitable for high-speed digital parallel interfaces each operating at over 10 Gbps. One potential application for such high-performance I/Os is the interface between the channel IC and the magnetic read head in future compact hard disk systems. First, a crosstalk cancellation technique using a novel data encoding scheme is introduced to suppress electromagnetic interference (EMI) generated by the adjacent parallel I/Os . This technique is implemented utilizing a novel 8-4-PAM signaling with a data look-ahead algorithm. The key circuit components in the high-speed interface transceiver including the receive sampler, the phase interpolator, and the transmitter output driver are described in detail. Designed in a 0.13-μm digital CMOS process, the transceiver consumes 310 mW per 10-Gps channel from a I-V supply based on simulation results. Next, a 20-Gbps continuous-time adaptive passive equalizer utilizing on-chip lumped RLC components is described. Passive equalizers offer the advantages of higher bandwidth and lower power consumption compared with conventional designs using active filter. A low-power, continuous-time servo loop is designed to automatically adjust the equalizer frequency response for the optimal gain compensation. The equalizer not only adapts to different channel characteristics, but also accommodates temperature and process variations. Implemented in a 0.25-μm, 1P6M BiCMOS process, the equalizer can compensate up to 20 dB of loss at 10 GHz while only consumes 32 mW from a 2.5-V supply.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

scholarly journals A HIGH-PERFORMANCE AND LOW-POWER DELAY BUFFER

2013 ◽  
pp. 78-82
Author(s):  
GOPALA KRISHNA.M ◽  
UMA SANKAR.CH ◽  
NEELIMA. S ◽  
KOTESWARA RAO.P
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Vlsi Design ◽  
Flip Flop ◽  
Ring Counter ◽  
Double Edge ◽  
Low Power Cmos ◽  
Cmos Vlsi

In this paper, presents circuit design of a low-power delay buffer. The proposed delay buffer uses several new techniques to reduce its power consumption. Since delay buffers are accessed sequentially, it adopts a ring-counter addressing scheme. In the ring counter, double-edge-triggered (DET) flip-flops are utilized to reduce the operating frequency by half and the C-element gated-clock strategy is proposed. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Speed-Power product is reduced by 56%-63% compared to other double edge triggered flip-flops. This design is suitable for high-speed, low-power CMOS VLSI design applications.

scholarly journals High-Speed Hybrid-Logic Full Adder Using High-Performance 10-T XOR–XNOR Cell

2021 ◽  
pp. 263-269
Author(s):  
Tejaswini M. L ◽  
Aishwarya H ◽  
Akhila M ◽  
B. G. Manasa
Keyword(s):  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Cmos Technology ◽  
Power Performance ◽  
High Speed Design ◽  
Power Delay Product ◽  
Full Swing ◽  
Output Swing ◽  
High Output

The main aim of our work is to achieve low power, high speed design goals. The proposed hybrid adder is designed to meet the requirements of high output swing and minimum power. Performance of hybrid FA in terms of delay, power, and driving capability is largely dependent on the performance of XOR-XNOR circuit. In hybrid FAs maximum power is consumed by XOR-XNOR circuit. In this paper 10T XOR-XNOR is proposed, which provide good driving capabilities and full swing output simultaneously without using any external inverter. The performance of the proposed circuit is measured by simulating it in cadence virtuoso environment using 90-nm CMOS technology. This circuit outperforms its counterparts showing power delay product is reduced than that of available XOR-XNOR modules. Four different full adder designs are proposed utilizing 10T XOR-XNOR, sum and carry modules. The proposed FAs provide improvement in terms of PDP than that of other architectures. To evaluate the performance of proposed full adder circuit, we embedded it in a 4-bit and 8-bit cascaded full adder. Among all FAs two of the proposed FAs provide the best performance for a higher number of bits.

Sign in / Sign up

Export Citation Format

Share Document