Thermosonic Gold to Gold Intermetallic Advantages for CSP Packaging

2010 ◽  
Vol 2010 (1) ◽  
pp. 000821-000828
Author(s):  
Philip Couts
Keyword(s):  
Thermal Performance ◽  
High Performance ◽  
Flip Chip ◽  
Bonding Temperature ◽  
High Growth ◽  
Consumer Products ◽  
Color Temperature ◽  
Solder Alloys ◽  
Assembly Method ◽  
Die Attach

Flip chip thermosonic back end assembly method is a low cost clean gold to gold interconnection method. The advancement of flip chip thermosonic process for CSP packaging of HBLED and CMOS image sensors is occurring due to the precision intermetallic clean interconnection properties and ability to provide a small form factor packaging to consumer products. This paper will investigate thermosonic metal to metal interconnection process for these high growth assembly markets. Thermosonic bonding uses a micro weld interconnection die attach method at lower bonding temperature (150°C). The thermosonic metal to metal interconnection method is lead free and the process does not use flux or solder alloys. Thermosonic flip chip die attach process uses a robust individual die “scrubbing” process which reduces assembly steps and eliminates the mass reflow oven used commonly in C4 solder process. The metal to metal interconnection method provides excellent thermal performance for HBLEDs which require the Tj peak temperature to be controlled to maximize device MTBF and overall color temperature performance. The uses of metal to metal interconnection method provide superior thermal performance when compared to solder alloys. The metal to metal interconnection method provides high precision with low particle generation for high performance bonding of CMOS image die using a low-k dielectric wafer. The line spacing for the substrate is 50 μm / 50 μm. Stud bumping machines have a ball placement accuracy of +/− 2.5 μm. Thermosonic GGI die bonders have a mounting accuracy of +/−7 μm. Thermosonic bonding has fast process bonding times of < 500 msec which is important productivity factor in cost sensitive cell phone camera and flash modules.

Understanding Mold Compound Behavior on Flip Chip QFN Packages

2018 ◽  
Vol 2018 (1) ◽  
pp. 000125-000128
Author(s):  
Ruby Ann M. Camenforte ◽  
Jason Colte ◽  
Richard Sumalinog ◽  
Sylvester Sanchez ◽  
Jaimal Williamson
Keyword(s):  
Thermal Performance ◽  
High Performance ◽  
Flip Chip ◽  
Low Cost ◽  
Semiconductor Industry ◽  
Gelation Time ◽  
Molding Process ◽  
Design Quality ◽  
Low Resistance ◽  
Die Attach

Abstract Overmolded Flip Chip Quad Flat No-lead (FCQFN) is a low cost flip chip on leadframe package where there is no need for underfill, and is compatible with Pb free or high Pb metallurgy. A robust leadframe design, quality solder joint formation and an excellent molding process are three factors needed to assemble a high performance FCQFN. It combines the best of both wirebonded QFN and wafer chip scale devices. For example, wafer chip scale has low resistance, but inadequate thermal performance (due to absence of thermal pad), whereas wirebonded QFN has good thermal performance (i.e., heat dissipated through conductive die attach material, through the pad and to the board) but higher resistance. Flip chip QFN combines both positive aspects – that is: low resistance and good thermals. One of the common defects for molded packages across the semiconductor industry is the occurrence of mold voiding as this can potentially affect the performance of a device. This paper will discuss how mold voiding is mitigated by understanding the mold compound behavior on flip chip QFN packages. Taking for example the turbulent mold flow observed on flip chip QFN causing mold voids. Mold compound material itself has a great contribution to mold voids, hence defining the correct attributes of the mold compound is critical. Altering the mold compound property to decrease the mold compound rheology is a key factor. This dynamic interaction between mold compound and flip chip QFN package configuration is the basis for a series of design of experiments using a full factorial matrix. Key investigation points are establishing balance in mold compound chemistry allowing flow between bump pitch, as well as the mold compound rheology, where gelation time has to be properly computed to allow flow across the leadframe. Understanding the flow-ability of mold compound for FCQFN, the speed of flow was optimized to check on its impact on mold voids. Mold airflow optimization is also needed to help fill in tighter bump spacing but vacuum-on time needs to be optimized as well.

High Reliability and Thermal Performance FCBGA Package

2007 ◽  
Author(s):  
Gino Hung ◽  
Ho-Yi Tsai ◽  
Chun An Huang ◽  
Steve Chiu ◽  
C. S. Hsiao
Keyword(s):  
Thermal Performance ◽  
High Performance ◽  
Flip Chip ◽  
Dielectric Material ◽  
High Reliability ◽  
Lead Free ◽  
Molding Process ◽  
Molding Compound ◽  
Reliability Performance ◽  
Low K

A high reliability and high thermal performance molding flip chip ball grid arrays structure which was improved from Terminator FCBGA®. (The structure are shown as Fig. 1) It has many advantages, like better coplanarity, high through put (multi pes for each shut of molding process), low stress, and high thermal performance. In conventional flip chip structure, underfill dispenses and cure processes are a bottleneck due to low through put (dispensing unit by unit). For the high performance demand, large package/die size with more integrated functions needs to meet reliability criteria. Low k dielectric material, lead free bump especially and the package coplanarity are also challenges for package development. Besides, thermal performance is also a key concern with high power device. From simulation and reliability data, this new structure can provide strong bump protection and reach high reliability performance and can be applied for low-K chip and all kind of bump composition such as tin-lead, high lead, and lead free. Comparing to original Terminator FCBGA®, this structure has better thermal performance because the thermal adhesive was added between die and heat spreader instead of epoxy molding compound (EMC). The thermal adhesive has much better thermal conductivity than EMC. Furthermore, this paper also describes the process and reliability validation result.

scholarly journals Thermal Performance of LED Filament in Flip-Chip Packaging Manufactured for Different Correlated Color Temperature

2021 ◽  
Vol 11 (19) ◽  
pp. 8844
Author(s):  
He Jiang ◽  
Jiming Sa ◽  
Cong Fan ◽  
Yiwen Zhou ◽  
Hanwen Gu ◽  
...  
Keyword(s):  
Thermal Performance ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Color Difference ◽  
Junction Temperature ◽  
Color Temperature ◽  
Constant Current ◽  
Light Emitting ◽  
Flip Chip Packaging

The effect of correlated color temperature (CCT) on the thermal performance of light emitting diode (LED) filament in flip-chip packaging was investigated in detail. Two filaments with different lengths were selected as the research object, and the thermal resistance of filaments under three CCT (2200 K, 2400 K, 2700 K) were studied. The optical properties and thermal parameters of the two groups of filaments were measured, and the results were analyzed combined with the color coordinate. The experimental results show that thermal properties of LED filaments is closely related to CCT. Under constant current condition, junction temperature decreases with the increase of color difference. With the change of phosphor glue and phosphorus powder ratio, the color temperature of LED filament also changes. In the filaments with the same chip structure and packaging mechanism, the higher the proportion of red phosphorescent powder, the worse the heat dissipation performance of the filament. These results show that in the design and manufacture of LED filament, it is helpful to control the CCT of LED filament under the premise of meeting the use requirements.

COMPARISON OF FOWLP VS QFN PACKAGE FROM THERMAL ASPECT

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000248-000271 ◽  
Author(s):  
Qun Wan
Keyword(s):  
Thermal Performance ◽  
Flip Chip ◽  
Low Cost ◽  
Wafer Level ◽  
Element Analysis ◽  
Rf Power Amplifier ◽  
Thermal Test ◽  
Die Attach ◽  
Bottleneck Identification ◽  
Resistance Breakdown

The QFN package dominates IC industry with a small number of IOs due to its simplicity, maturity and low cost in mass production. However, as the industry progresses toward portability and smaller size, thinner and more compact packages such as Fan Out Wafer Level Package (FOWLP) is a better option/solution than QFN package. Due to its flip chip configuration, imbedded redistribution (RDL) interconnection and elimination of die attach layer, the FOWLP package has potential to surpass QFN package in thermal performance. This paper utilized a typical 3-stage RF power amplifier die as a thermal test vehicle, packaged with FOWLP and QFN, built FEA (Finite Element Analysis) thermal models and analyzed the thermal performance by thermal resistance breakdown and thermal bottleneck identification. Comparison of FOWLP and QFN shows that the heat paths and bottlenecks within each package are quite different. In QFN package, bottleneck lies in the die attach layer while in FOWLP package, it lies in the backend layers on the die and the RDL vias. FOWLP package may also require better thermal vias performance in PCB due to smaller footprint of LGA/Solder. Large horizontal heat spreading in a poorly design PCB may offset the thermal advantages in FOWLP package. The simulation results of both packages have good correlation with Infrared (IR) measurement of corresponding thermal test vehicles.

SLID Bonding for Energy Dense Applications – Thermo-Mechanics

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000104-000109
Author(s):  
Andreas Larsson ◽  
Torleif André Tollefsen
Keyword(s):  
High Performance ◽  
Mechanical Performance ◽  
Bonding Temperature ◽  
Effective Strain ◽  
Process Temperature ◽  
Generic Properties ◽  
Element Analysis ◽  
Brushless Dc ◽  
Die Attach ◽  
Electronic Assemblies

Solid-Liquid Inter-Diffusion (SLID) bonding is traditionally a technology used for high performance and high reliable die attach/interconnect applications. The generic properties of SLID allows the bonding to occur at a relatively low process temperature. However, when the bond is completed, the final joint has a melting point well above the process temperature. This makes it well suited as for high performance electronic assemblies. The typical bonding temperature of Cu-Sn SLID and Au-Sn SLID are 250–300 °C and 320–350 °C respectively. These temperatures compare to that of other high temperature (HT) electronic adhesives e.g. Staystik® 101G. The thermal performance of the SLID bond is superior to other electronic interface materials. This is due to the thin joint (∼ 10 μm) and the high thermal conductivity (∼ 60 W/m·K for Au-Sn). Thus, the thermal resistance of a SLID joint, about 2×10−3 cm2·K/W, is significantly lower than most other thermo-mechanical joints suitable for use in electronic assemblies. SLID joints have also proven to be mechanically robust for harsh environment applications. In this study the thermo-mechanical properties of large Cu-Sn SLID bond are investigated. Simulations are performed to explore the stationary thermo-mechanical performance of the joint. Finite element analysis (FEA) is used to perform the simulations. The study is based on a case study involving a HT (> 200 °C) power controller device for a brushless DC motor for downhole applications. The effective strain was found to be high in the bond adjacent Cu layers but reasonably small, < 1%, within the joint itself.

An Assessment of the Impact of Interconnect Strategies on Thermal Performance of GaAs Power Amplifier IC Devices

2001 ◽  
Author(s):  
V. H. Adams ◽  
T.-Y. Tom Lee
Keyword(s):  
Thermal Resistance ◽  
Power Amplifier ◽  
Thermal Performance ◽  
Flip Chip ◽  
Printed Circuit Board ◽  
Circuit Board ◽  
Printed Circuit ◽  
Wire Bond ◽  
Die Attach ◽  
The Impact

Abstract Alternative interconnect strategies are being considered in place of the standard wire bond interconnect for GaAs power amplifier MMIC devices due to cost and electrical performance improvements. The package/die thermal performance consequences are potentially high-risk issue to these interconnect strategies and requires evaluation. Thermal simulations are conducted to compare and evaluate the thermal performances of three interconnect strategies: wire bond, gold post-flip chip, and through via interconnects. The test vehicle simulated is a three-stage, dual band power amplifier integrated circuit dissipating approximately 5 W steady-state power. Parametric studies are conducted to evaluate the impact of the printed circuit board, die thickness, solid gold vias, and design enhancements on package thermal performance. Best thermal performance is provided by a wire bonded, thin GaAs die attached with solder die attach to a printed circuit board that maximizes the number of plated-through-holes directly under the die. This configuration results in a best case junction-to-heat sink thermal resistance of 12 °C/W. Optimum flip chip and through via designs result in degraded thermal performance compared to the above described wire bond design but may have acceptable thermal performance. For these simulations, predicted junction-to-heatsink thermal resistance is in a range of 15–20 °C/W and is better than a comparable wire bonded design that uses a conductive epoxy die attach material.

SI-ON-SI MCM TECHNOLOGY AND ITS APPLICATIONS

1991 ◽  
Vol 02 (04) ◽  
pp. 251-261 ◽  
Author(s):  
K.L. TAI
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
Technological Development ◽  
High Reliability ◽  
Low Cost ◽  
Consumer Products ◽  
Printed Wiring Board ◽  
Cad System ◽  
Compact Size ◽  
Challenges And Opportunities

Multichip Module (MCM) packaging has been used in high-end systems, such as mainframe and supercomputers for some time. Rapid advances in VLSI technology and novel system architecture concepts have presented both challenges and opportunities for MCM technologists. We should not just try to find a solution, but also try to take a long-term view and plan the technological development. We would like to develop MCM technology which has a broad range of applications from consumer products to supercomputers. The technology should focus on low cost, high performance, compact size, and high reliability. We believe that it is most attractive to leverage IC technology and surface mount technology (SMT). Therefore we select Si wafer as the substrate, Al as the metallization, polyimide as the dielectrics, Ta-Si as the resistor material, and Si oxide and nitride as the dielectrics for capacitor. Flip-chip solder attachment are used to assemble chips on the substrate. We view our version of MCM as a “giant chip” rather than a miniaturized printed wiring board. This “giant chip” contains mixed device technologies which cannot be obtained by current device technology. The migration path should be from small to large module. The infrastructure of the CAD system and the testing system is critical for the development of MCM technology. Potential applications and implementations of MCM technology are given in this paper.

Spray Cooling for Time Resolved Emission Measurements of ICs

2004 ◽  
Author(s):  
Rama R. Goruganthu ◽  
David Bethke ◽  
Shawn McBride ◽  
Tom Crawford ◽  
Jonathan Frank ◽  
...  
Keyword(s):  
Heat Flux ◽  
Thermal Performance ◽  
Flip Chip ◽  
Cooling System ◽  
Spray Cooling ◽  
Junction Temperature ◽  
Maximum Temperature ◽  
Uniform Heat Flux ◽  
High Heat Flux ◽  
Time Resolved

Abstract Spray cooling is implemented on an engineering tool for Time Resolved Emission measurements using a silicon solid immersion lens to achieve high spatial resolution and for probing high heat flux devices. Thermal performance is characterized using a thermal test vehicle consisting of a 4x3 array of cells each with a heater element and a thermal diode to monitor the temperature within the cell. The flip-chip packaged TTV is operated to achieve uniform heat flux across the die. The temperature distribution across the die is measured on the 4x3 grid of the die for various heat loads up to 180 W with corresponding heat flux of 204 W/cm2. Using water as coolant the maximum temperature differential across the die was about 30 °C while keeping the maximum junction temperature below 95 °C and at a heat flux of 200 W/cm2. Details of the thermal performance of spray cooling system as a function of flow rate, coolant

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