Pre-applied Inter Chip Fill for 3D-IC Joining

2014 ◽  
Vol 2014 (1) ◽  
pp. 000242-000246 ◽  
Author(s):  
Y. Kawase ◽  
M. Ikemoto ◽  
M. Sugiyama ◽  
H. Kiritani ◽  
F. Mizutani ◽  
...  

For the conventional two dimensional (2D) packaging of integrated circuit (IC), reflow and capillary under fill have been used for more than a decade. But for the purpose of low power and high performance of IC, three dimensional IC (3D-IC) have been proposed in recent years. In case of 3D-IC, both bump pitches and gaps between stacked thin chips should be fine and narrow, so that pre-applied inter chip fill (ICF) which is applied in thermal compression bonding have been proposed. In this process, not only low viscosity but also thermal conductivity is simultaneously required. In this study, some of selected epoxy based matrix and filler were simulated and evaluated for pre-applied ICF, we confirmed its process applicability to pre-applied chip bonding. Physical characteristics of cured ICF and void-less joining were also discussed.

Author(s):  
Yasuhiro Kawase ◽  
Makoto Ikemoto ◽  
Masaya Sugiyama ◽  
Hidehiro Yamamoto ◽  
Hideki Kiritani

Three dimensional integrated circuits (3D-IC) have been proposed for the purpose of low power and high performance in recent years. Pre-applied inter chip fill is required for fine pitch interconnections, large chips, and also thin chips. In addition to them, pre-applied joining process with high thermal conductive inter chip fill (HT-ICF) is strongly required for the cooling of 3D-IC. Some kinds of matrix resins and thermal conductive fillers were simulated and evaluated for pre-applied ICF. As a result, matrix and cure agent appeared to be important to both pre-applied ICF process compatibility and thermal conductivity, so that we’d selected epoxy type matrix based on controlling super molecular structure due to its mesogen unit. And not only matrix but also filler appeared to be the key to improve thermal conductivity for pre-applied ICF at the same time. The thermal conductivity of conventional silica filler was only 1W/mK, so that, taking into account of thermal conductivity, density and its stability, we’d selected aluminum oxide and boron nitride as thermal conductive filler and optimized HT-ICF for pre-applied process. After composite was mixed and cured, some physical properties were measured and thermal conductivity was 1.8W/mK, CTE was below 21ppm/K and Tg was 120°C. Furthermore, new high thermal conductive filler was also studied. We’d synthesized completely new spherical BN (diameter <5um) and applied it to HT-ICF and the thermal conductivity was almost two times higher than conventional BN. In this study, we confirmed ICF physical characteristics and its pre-applied joining for 3D-IC and void-less joining was also discussed.


2020 ◽  
Vol 10 (3) ◽  
pp. 748
Author(s):  
Dipesh Kapoor ◽  
Cher Ming Tan ◽  
Vivek Sangwan

Advancements in the functionalities and operating frequencies of integrated circuits (IC) have led to the necessity of measuring their electromagnetic Interference (EMI). Three-dimensional integrated circuit (3D-IC) represents the current advancements for multi-functionalities, high speed, high performance, and low-power IC technology. While the thermal challenges of 3D-IC have been studied extensively, the influence of EMI among the stacked dies has not been investigated. With the decreasing spacing between the stacked dies, this EMI can become more severe. This work demonstrates the potential of EMI within a 3D-IC numerically, and determines the minimum distance between stack dies to reduce the impact of EMI from one another before they are fabricated. The limitations of using near field measurement for the EMI study in stacked dies 3D-IC are also illustrated.


2019 ◽  
Vol 69 (3) ◽  
pp. 217-222 ◽  
Author(s):  
Srinivas Sabbavarapu ◽  
Amit Acharyya ◽  
P. Balasubramanian ◽  
C. Ramesh Reddy

In the recent years the advancement in the field of microelectronics integrated circuit (IC) design technologies proved to be a boon for design and development of various advanced systems in-terms of its reduction in form factor, low power, high speed and with increased capacity to incorporate more designs. These systems provide phenomenal advantage for armoured fighting vehicle (AFV) design to develop miniaturised low power, high performance sub-systems. One such emerging high-end technology to be used to develop systems with high capabilities for AFVs is discussed in this paper. Three dimensional IC design is one of the emerging field used to develop high density heterogeneous systems in a reduced form factor. A novel grouping based partitioning and merge based placement (GPMP) methodology for 3D ICs to reduce through silicon vias (TSVs) count and placement time is proposed. Unlike state-of-the-art techniques, the proposed methodology does not suffer from initial overlap of cells during intra-layer placement which reduces the placement time. Connectivity based grouping and partitioning ensures less number of TSVs and merge based placement further reduces intra layer wire-length. The proposed GPMP methodology has been extensively against the IBMPLACE database and performance has been compared with the latest techniques resulting in 12 per cent improvement in wire-length, 13 per cent reduction in TSV and 1.1x improvement in placement time.


Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.


2021 ◽  
Vol 7 (3) ◽  
pp. 209-219
Author(s):  
Iris J Holzleitner ◽  
Alex L Jones ◽  
Kieran J O’Shea ◽  
Rachel Cassar ◽  
Vanessa Fasolt ◽  
...  

Abstract Objectives A large literature exists investigating the extent to which physical characteristics (e.g., strength, weight, and height) can be accurately assessed from face images. While most of these studies have employed two-dimensional (2D) face images as stimuli, some recent studies have used three-dimensional (3D) face images because they may contain cues not visible in 2D face images. As equipment required for 3D face images is considerably more expensive than that required for 2D face images, we here investigated how perceptual ratings of physical characteristics from 2D and 3D face images compare. Methods We tested whether 3D face images capture cues of strength, weight, and height better than 2D face images do by directly comparing the accuracy of strength, weight, and height ratings of 182 2D and 3D face images taken simultaneously. Strength, height and weight were rated by 66, 59 and 52 raters respectively, who viewed both 2D and 3D images. Results In line with previous studies, we found that weight and height can be judged somewhat accurately from faces; contrary to previous research, we found that people were relatively inaccurate at assessing strength. We found no evidence that physical characteristics could be judged more accurately from 3D than 2D images. Conclusion Our results suggest physical characteristics are perceived with similar accuracy from 2D and 3D face images. They also suggest that the substantial costs associated with collecting 3D face scans may not be justified for research on the accuracy of facial judgments of physical characteristics.


Nanoscale ◽  
2021 ◽  
Author(s):  
Shaoyang Xiong ◽  
Yue Qin ◽  
Linhong Li ◽  
Guoyong Yang ◽  
Maohua Li ◽  
...  

In order to meet the requirement of thermal performance with the rapid development of high-performance electronic devices, constructing a three-dimensional thermal transport skeleton is an effective method for enhancing thermal...


Nanoscale ◽  
2021 ◽  
Author(s):  
Chang Liu ◽  
Xiaodong Li ◽  
Tiangui Hu ◽  
Wenkai Zhu ◽  
Faguang Yan ◽  
...  

Integration of two dimensional (2D) materials with three dimensional (3D) semiconductors reveals intriguing optical and electrical properties that surpass those of the original materials. Here we report the high performance...


2013 ◽  
Vol 2013 (1) ◽  
pp. 000408-000413
Author(s):  
Y. Kawase ◽  
M. Ikemoto ◽  
M. Yamazaki ◽  
M. Sugiyama ◽  
H. Kiritani ◽  
...  

Three dimensional (3D) IC has been proposed for high performance and low power in recent years. Due to the narrow gap between stacked chips and fine pitch of bumps, new inter chip fill (ICF) which can be used for pre-applied ICF process is required. The heat generation of 3D-IC is higher than 2D, so that a high thermal conductive inter chip fill (HT-ICF) is simultaneously required to dissipate the heat from 3D-IC and for the purpose of pre-applied ICF and HT-ICF, highly active flux agent and thermal conductive materials such as filler and matrix have been called for at the same time. In this study, some kind of materials were prepared, synthesized and optimized for the HT-ICF, and we evaluated its characteristic and confirmed applicability to pre-applied joining for 3D-IC.


2020 ◽  
Vol 842 ◽  
pp. 63-68
Author(s):  
Xiao Zhang ◽  
Jian Zheng ◽  
Yong Qiang Du ◽  
Chun Ming Zhang

Three-dimensional (3D) network structure has been recognized as an efficient approach to enhance the mechanical and thermal conductive properties of polymeric composites. However, it has not been applied in energetic materials. In this work, a fluoropolymer based composite with vertically oriented and interconnected 3D graphite network was fabricated for polymer bonded explosives (PBXs). Here, the graphite and graphene oxide platelets were mixed, and self-assembled via rapid freezing and using crystallized ice as the template. The 3D structure was finally obtained by freezing-dry, and infiltrating with polymer. With the increasing of filler fraction and cooling rate, the thermal conductivity of the polymer composite was significantly improved to 2.15 W m-1 K-1 by 919% than that of pure polymer. Moreover, the mechanical properties, such as tensile strength and elastic modulus, were enhanced by 117% and 563%, respectively, when the highly ordered structure was embedded in the polymer. We attribute the increased thermal and mechanical properties to this 3D network, which is beneficial to the effective heat conduction and force transfer. This study supports a desirable way to fabricate the strong and thermal conductive fluoropolymer composites used for the high-performance polymer bonded explosives (PBXs).


2005 ◽  
Vol 867 ◽  
Author(s):  
J. J. McMahon ◽  
F. Niklaus ◽  
R. J. Kumar ◽  
J. Yu ◽  
J.Q. Lu ◽  
...  

AbstractWafer-level three dimensional (3D) IC technology offers the promise of decreasing RC delays by reducing long interconnect lines in high performance ICs. This paper focuses on a viafirst 3D IC platform, which utilizes a back-end-of-line (BEOL) compatible damascene-patterned layer of copper and Benzocyclobutene (BCB). This damascene-patterned copper/BCB serves as a redistribution layer between two fully fabricated wafer sets of ICs and offers the potential of high bonding strength and low contact resistance for inter-wafer interconnects between the wafer pair. The process would thus combine the electrical advantages of 3D technology using Cu-to-Cu bonding with the mechanical advantages of 3D technology using BCB-to-BCB bonding.In this work, partially cured BCB has been evaluated for copper damascene patterning using commercially available CMP slurries as a key process step for a via-first 3D process flow. BCB is spin-cast on 200 mm wafers and cured at temperatures ranging from 190°C to 250°C, providing a wide range of crosslink percentage. These films are evaluated for CMP removal rate, surface damage (surface scratching and embedded abrasives), and planarity with commercially available copper CMP slurries. Under baseline process parameters, erosion, and roughness changes are presented for single-level damascene test patterns. After wafers are bonded under controlled temperature and pressure, the bonding interface is inspected optically using glass-to-silicon bonded wafers, and the bond strength is evaluated by a razor blade test.


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