CMP Compatibility of Partially Cured Benzocyclobutene (BCB) for a Via-First 3D IC Process

2005 ◽  
Vol 867 ◽  
Author(s):  
J. J. McMahon ◽  
F. Niklaus ◽  
R. J. Kumar ◽  
J. Yu ◽  
J.Q. Lu ◽  
...  
Keyword(s):  
High Performance ◽  
Removal Rate ◽  
Three Dimensional ◽  
Surface Damage ◽  
Wafer Level ◽  
Razor Blade ◽  
3D Ic ◽  
3D Technology ◽  
Process Step ◽  
Wide Range

AbstractWafer-level three dimensional (3D) IC technology offers the promise of decreasing RC delays by reducing long interconnect lines in high performance ICs. This paper focuses on a viafirst 3D IC platform, which utilizes a back-end-of-line (BEOL) compatible damascene-patterned layer of copper and Benzocyclobutene (BCB). This damascene-patterned copper/BCB serves as a redistribution layer between two fully fabricated wafer sets of ICs and offers the potential of high bonding strength and low contact resistance for inter-wafer interconnects between the wafer pair. The process would thus combine the electrical advantages of 3D technology using Cu-to-Cu bonding with the mechanical advantages of 3D technology using BCB-to-BCB bonding.In this work, partially cured BCB has been evaluated for copper damascene patterning using commercially available CMP slurries as a key process step for a via-first 3D process flow. BCB is spin-cast on 200 mm wafers and cured at temperatures ranging from 190°C to 250°C, providing a wide range of crosslink percentage. These films are evaluated for CMP removal rate, surface damage (surface scratching and embedded abrasives), and planarity with commercially available copper CMP slurries. Under baseline process parameters, erosion, and roughness changes are presented for single-level damascene test patterns. After wafers are bonded under controlled temperature and pressure, the bonding interface is inspected optically using glass-to-silicon bonded wafers, and the bond strength is evaluated by a razor blade test.

scholarly journals High-Performance Temporary Adhesives for Wafer Bonding Applications

2006 ◽  
Vol 970 ◽  
Author(s):  
Rama Puligadda ◽  
Sunil Pillalamarri ◽  
Wenbin Hong ◽  
Chad Brubaker ◽  
Markus Wimplinger ◽  
...  
Keyword(s):  
High Performance ◽  
Heat Dissipation ◽  
Driving Forces ◽  
Three Dimensional ◽  
Temperature Stability ◽  
Thickness Variation ◽  
High Temperature Stability ◽  
Process Step ◽  
Wide Range ◽  
Wafer Thinning

ABSTRACTMyriad structures for stacking chips, power devices, smart cards, and thin substrates for processors have one thing in common: thin silicon. Wafer thinning will soon be an essential process step for most of the devices fabricated and packaged henceforth. The key driving forces for thinned wafers are improved heat dissipation, three-dimensional stacking, reduced electrical resistance, and substrate flexibility. Handling of thin and ultrathin substrates however is not trivial because of their fragility and tendency to warp and fold. The thinned substrates need to be supported during the backside grinding process and through the subsequent processes such as lithography, deposition, etc. Using temporary adhesives to attach the processed device wafer to a rigid carrier wafer offers an efficient solution. The key requirements for such materials are ease of application, coating uniformity with minimal thickness variation across the wafer, good adhesion to a wide variety of surfaces, thermal stability in processes such as dielectric deposition and metallization, and ease of removal to allow high throughput. An additional requirement for these materials is stability in harsh chemical environments posed by processes such as etching and electroplating. Currently available materials meet only a subset of these requirements. None of them meet the requirement of high-temperature stability combined with ease of removal. We have developed adhesives that meet a wide range of post-thinning operating temperatures. Additionally, the materials are soluble in industry-accepted safe solvents and can be spin-applied to required thicknesses and uniformity. Above all, the coatings can be removed easily without leaving any residue. This paper reports on the development of a wide range of temporary adhesives that can be used in wafer thinning applications while applying both novel and conventional bonding and debonding methods.

Die-on-Wafer and Wafer-Level Three-Dimensional (3D) Integration of Heterogeneous IC Technologies for RF-Microwave-Millimeter Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
J.-Q. Lu ◽  
S. Devarajan ◽  
A. Y. Zeng ◽  
K. Rose ◽  
R. J. Gutmann
Keyword(s):  
High Performance ◽  
Three Dimensional ◽  
Wafer Level ◽  
3D Integration ◽  
3D Technology ◽  
Passive Components ◽  
Analog To Digital ◽  
Integration Platform ◽  
Rf Transceivers ◽  
Rf Microwave

ABSTRACTDie-on-wafer and wafer-level three-dimensional (3D) integrations of heterogeneous IC technologies are briefly described, emphasizing a specific 3D hyper-integration platform using dielectric adhesive wafer bonding and Cu damascene inter-wafer interconnects to provide a perspective on wafer-level 3D technology processing. Wafer-level 3D partitioning of high Q passive components, analog-to-digital (A/D) converters, RF transceivers, digital processors, and memory is discussed for high-performance RF-microwave-millimeter applications, especially where high manufacturing quantities are anticipated. Design and simulation results of 3D heterogeneous integration are presented. This 3D technology is applicable to smart wireless terminals, millimeter phased array radars, and smart imagers.

scholarly journals Pulsed Electromagnetic Cross-Well Exploration for Monitoring Permafrost and Examining the Processes of Its Geocryological Changes

Geosciences ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 60
Author(s):  
Viacheslav Glinskikh ◽  
Oleg Nechaev ◽  
Igor Mikhaylov ◽  
Kirill Danilovskiy ◽  
Vladimir Olenchenko
Keyword(s):  
High Performance ◽  
Geophysical Methods ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Data Interpretation ◽  
Industrial Facilities ◽  
Wide Range ◽  
Vector Finite Element ◽  
A New Technique ◽  
Pulsed Electromagnetic

This paper is dedicated to the topical problem of examining permafrost’s state and the processes of its geocryological changes by means of geophysical methods. To monitor the cryolithozone, we proposed and scientifically substantiated a new technique of pulsed electromagnetic cross-well sounding. Based on the vector finite-element method, we created a mathematical model of the cross-well sounding process with a pulsed source in a three-dimensional spatially heterogeneous medium. A high-performance parallel computing algorithm was developed and verified. Through realistic geoelectric models of permafrost with a talik under a highway, constructed following the results of electrotomography field data interpretation, we numerically simulated the pulsed sounding on the computing resources of the Siberian Supercomputer Center of SB RAS. The simulation results suggest the proposed system of pulsed electromagnetic cross-well monitoring to be characterized by a high sensitivity to the presence and dimensions of the talik. The devised approach can be oriented to addressing a wide range of issues related to monitoring permafrost rocks under civil and industrial facilities, buildings, and constructions.

Fused filament printing of specialized biomedical devices: a state-of-the art review of technological feasibilities with PEEK

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Erfan Rezvani Ghomi ◽  
Saeideh Kholghi Eshkalak ◽  
Sunpreet Singh ◽  
Amutha Chinnappan ◽  
Seeram Ramakrishna ◽  
...  
Keyword(s):  
High Performance ◽  
State Of The Art ◽  
Three Dimensional ◽  
Patient Specific ◽  
Biomedical Devices ◽  
Fused Filament Fabrication ◽  
Content Type ◽  
Patient Specific Implants ◽  
Complex Design ◽  
Wide Range

Purpose The potential implications of the three-dimensional printing (3DP) technology are growing enormously in the various health-care sectors, including surgical planning, manufacturing of patient-specific implants and developing anatomical models. Although a wide range of thermoplastic polymers are available as 3DP feedstock, yet obtaining biocompatible and structurally integrated biomedical devices is still challenging owing to various technical issues. Design/methodology/approach Polyether ether ketone (PEEK) is an organic and biocompatible compound material that is recently being used to fabricate complex design geometries and patient-specific implants through 3DP. However, the thermal and rheological features of PEEK make it difficult to process through the 3DP technologies, for instance, fused filament fabrication. The present review paper presents a state-of-the-art literature review of the 3DP of PEEK for potential biomedical applications. In particular, a special emphasis has been given on the existing technical hurdles and possible technological and processing solutions for improving the printability of PEEK. Findings The reviewed literature highlighted that there exist numerous scientific and technical means which can be adopted for improving the quality features of the 3D-printed PEEK-based biomedical structures. The discussed technological innovations will help the 3DP system to enhance the layer adhesion strength, structural stability, as well as enable the printing of high-performance thermoplastics. Originality/value The content of the present manuscript will motivate young scholars and senior scientists to work in exploring high-performance thermoplastics for 3DP applications.

Rapid 3D geological modeling to assess and visualize uncertainties in a web application

2021 ◽  
Author(s):  
Daniel Pflieger ◽  
Miguel de la Varga Hormazabal ◽  
Simon Virgo ◽  
Jan von Harten ◽  
Florian Wellmann
Keyword(s):  
Web Application ◽  
High Performance ◽  
Three Dimensional ◽  
Cloud Services ◽  
Management Approach ◽  
Geological Modeling ◽  
Web Browser ◽  
3D Geological Modeling ◽  
State Management ◽  
Wide Range

<p>Three dimensional modeling is a rapidly developing field in geological scientific and commercial applications. The combination of modeling and uncertainty analysis aides in understanding and quantitatively assessing complex subsurface structures. In recent years, many methods have been developed to facilitate this combined analysis, usually either through an extension of existing desktop applications or by making use of Jupyter notebooks as frontends. We evaluate here if modern web browser technology, linked to high-performance cloud services, can also be used for these types of analyses.</p><p>For this purpose, we developed a web application as proof-of-concept with the aim to visualize three dimensional geological models provided by a server. The implementation enables the modification of input parameters with assigned probability distributions. This step enables the generation of randomized realizations of models and the quantification and visualization of propagated uncertainties. The software is implemented using HTML Web Components on the client side and a Python server, providing a RESTful API to the open source geological modeling tool “GemPy”. Encapsulating the main components in custom elements, in combination with a minimalistic state management approach and a template parser, allows for high modularity. This enables rapid extendibility of the functionality of the components depending on the user’s needs and an easy integration into existing web platforms.</p><p>Our implementation shows that it is possible to extend and simplify modeling processes by creating an expandable web-based platform for probabilistic modeling, with the aim to increase the usability and to facilitate access to this functionality for a wide range of scientific analyses. The ability to compute models rapidly and with any given device in a web browser makes it flexible to use, and more accessible to a broader range of users.</p>

Application of SU-8 photoresist as a multi-functional structural dielectric layer in FOWLP

2017 ◽  
Vol 2017 (DPC) ◽  
pp. 1-19
Author(s):  
Raquel Pinto ◽  
André Cardoso ◽  
Sara Ribeiro ◽  
Carlos Brandão ◽  
João Gaspar ◽  
...  
Keyword(s):  
Structural Material ◽  
High Performance ◽  
Microelectromechanical Systems ◽  
Low Cost ◽  
Process Conditions ◽  
Processing Temperature ◽  
Wafer Level ◽  
Fast Growing ◽  
Wide Range ◽  
Different Types

Microelectromechanical Systems (MEMS) are a fast growing technology for sensor and actuator miniaturization finding more and more commercial opportunities by having an important role in the field of Internet of Things (IoT). On the same note, Fan-out Wafer Level Packaging (FOWLP), namely WLFO technology of NANIUM, which is based on Infineon/ Intel eWLB technology, is also finding further applications, not only due to its high performance, low cost, high flexibility, but also due to its versatility to allow the integration of different types of components in the same small form-factor package. Despite its great potential it is still off limits to the more sensitive components as micro-mechanical devices and some type of sensors, which are vulnerable to temperature and pressure. In the interest of increasing FOWLP versatility and enabling the integration of MEMS, new methods of assembling and processing are continuously searched for. Dielectrics currently used for redistribution layer construction need to be cured at temperatures above 200°C, making it one of the major boundary for low temperature processing. In addition, in order to accomplish a wide range of dielectric thicknesses in the same package it is often necessary to stack very different types of dielectrics with impact on bill of materials complexity and cost. In this work, done in cooperation with the International Iberian Nanotechnology Laboratory (INL), we describe the implementation of commercially available SU-8 photoresist as a structural material in FOWLP, allowing lower processing temperature and reduced internal package stress, thus enabling the integration of components such as MEMS/MOEMS, magneto-resistive devices and micro-batteries. While SU-8 photoresist was first designed for the microelectronics industry, it is currently highly used in the fabrication of microfluidics as well as microelectromechanical systems (MEMS) and BIO-MEMS due to its high biocompatibility and wide range of available thicknesses in the same product family. Its good thermal and chemical resistance and also mechanical and rheological properties, make it suitable to be used as a structural material, and moreover it cures at 150°C, which is key for the applications targeted. Unprecedentedly, SU-8 photoresist is tested in this work as a structural dielectric for the redistribution layers on 300mm fan-out wafers. Main concerns during the evaluation of the new WLFO dielectric focused on processability quality; adhesion to multi-material substrate and metals (copper, aluminium, gold, ¦); between layers of very different thicknesses; and overall reliability. During preliminary runs, processability on 300 mm fan-out wafers was evaluated by testing different coating and soft bake conditions, exposure settings, post-exposure parameters, up to developing setup. The outputs are not only on process conditions and results but also on WLFO design rules. For the first time, a set of conditions has been defined that allows processing SU-8 on WLFO, with thickness values ranging from 1 um to 150 um. The introduction of SU-8 in WLFO is a breakthrough in this fast-growing advanced packaging technology platform as it opens vast opportunities for sensor integration in WLP technology.

High Thermal Conductive Inter Chip Fill for 3D-IC through Pre-applied Joining Process

2013 ◽  
Vol 2013 (1) ◽  
pp. 000408-000413
Author(s):  
Y. Kawase ◽  
M. Ikemoto ◽  
M. Yamazaki ◽  
M. Sugiyama ◽  
H. Kiritani ◽  
...  
Keyword(s):  
High Performance ◽  
Three Dimensional ◽  
Narrow Gap ◽  
Flux Agent ◽  
3D Ic ◽  
Conductive Materials ◽  
Highly Active ◽  
Fine Pitch ◽  
Joining Process ◽  
Active Flux

Three dimensional (3D) IC has been proposed for high performance and low power in recent years. Due to the narrow gap between stacked chips and fine pitch of bumps, new inter chip fill (ICF) which can be used for pre-applied ICF process is required. The heat generation of 3D-IC is higher than 2D, so that a high thermal conductive inter chip fill (HT-ICF) is simultaneously required to dissipate the heat from 3D-IC and for the purpose of pre-applied ICF and HT-ICF, highly active flux agent and thermal conductive materials such as filler and matrix have been called for at the same time. In this study, some kind of materials were prepared, synthesized and optimized for the HT-ICF, and we evaluated its characteristic and confirmed applicability to pre-applied joining for 3D-IC.

Pre-Applied Inter Chip Fill for 3D-IC Chip Joining

2015 ◽  
Author(s):  
Yasuhiro Kawase ◽  
Makoto Ikemoto ◽  
Masaya Sugiyama ◽  
Hidehiro Yamamoto ◽  
Hideki Kiritani
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
High Performance ◽  
Three Dimensional ◽  
Conductive Filler ◽  
3D Ic ◽  
Fine Pitch ◽  
Silica Filler ◽  
Conductive Fillers ◽  
Process Compatibility

Three dimensional integrated circuits (3D-IC) have been proposed for the purpose of low power and high performance in recent years. Pre-applied inter chip fill is required for fine pitch interconnections, large chips, and also thin chips. In addition to them, pre-applied joining process with high thermal conductive inter chip fill (HT-ICF) is strongly required for the cooling of 3D-IC. Some kinds of matrix resins and thermal conductive fillers were simulated and evaluated for pre-applied ICF. As a result, matrix and cure agent appeared to be important to both pre-applied ICF process compatibility and thermal conductivity, so that we’d selected epoxy type matrix based on controlling super molecular structure due to its mesogen unit. And not only matrix but also filler appeared to be the key to improve thermal conductivity for pre-applied ICF at the same time. The thermal conductivity of conventional silica filler was only 1W/mK, so that, taking into account of thermal conductivity, density and its stability, we’d selected aluminum oxide and boron nitride as thermal conductive filler and optimized HT-ICF for pre-applied process. After composite was mixed and cured, some physical properties were measured and thermal conductivity was 1.8W/mK, CTE was below 21ppm/K and Tg was 120°C. Furthermore, new high thermal conductive filler was also studied. We’d synthesized completely new spherical BN (diameter <5um) and applied it to HT-ICF and the thermal conductivity was almost two times higher than conventional BN. In this study, we confirmed ICF physical characteristics and its pre-applied joining for 3D-IC and void-less joining was also discussed.

Diamond Coated End Mills in Machining Silicon Carbide

2012 ◽  
Vol 576 ◽  
pp. 531-534 ◽  
Author(s):  
Mohamed Konneh ◽  
Mohammad Iqbal ◽  
Nik Mohd Azwan Faiz
Keyword(s):  
Surface Roughness ◽  
Silicon Carbide ◽  
High Performance ◽  
Removal Rate ◽  
Roughness Parameter ◽  
Surface Damage ◽  
Ceramic Materials ◽  
Real Problem ◽  
Machining Parameters ◽  
Machining Processes

Silicon Carbide (SiC) is a type of ceramic that belongs to the class of hard and brittle material. Machining of ceramic materials can result in surface alterations including rough surface, cracks, subsurface damage and residual stresses. Efficient milling of high performance ceramic involves the selection of appropriate operating parameters to maximize the material removal rate (MRR) while maintaining the low surface finish and limiting surface damage. SiC being a ceramic material, its machining poses a real problem due to its low fracture toughness, making it very sensitive to crack. The paper discusses milling of silicon carbide using diamond coated end mill under different machining conditions in order to determine the surface roughness parameter, Rt after the machining processes and to establish a relationship between the machining parameters and response variables. Based on the surface roughness carried out the lowest Rt obtained is 0.46 µm.

Enabling Resist Processing Technologies for Advanced Packaging

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 000830-000862 ◽  
Author(s):  
Antun Peic ◽  
Thorsten Matthias ◽  
Johanna Bartl ◽  
Paul Lindner
Keyword(s):  
Three Dimensional ◽  
Design Solution ◽  
Wafer Level ◽  
Coating Technology ◽  
3D Ic ◽  
Wafer Level Packaging ◽  
Aspect Ratios ◽  
Integration Schemes ◽  
Interconnect Design ◽  
Deep Cavities

The increasing adoption of advanced wafer-level packaging (WLP) technologies and high density interposer concepts clearly reflect the permanent need for form factor reduction, smaller process geometries and higher-count I/O on ICs. Currently, several strategies are being pursued to achieve these goals. The most promising approaches are summarized under the concept of three-dimensional integrated circuits (3D-IC) and three-dimensional wafer level packaging (3D-WLP) technology. A key component for 3D device integration schemes is the requirement of vertical through-silicon-via (TSV) interconnections that enables electrical through-chip communication through stacks of vertically integrated layers on the wafer scale. Ultimately, the use of TSVs also enables higher performance and smaller package sizes. In order to realize TSV connections, a series of process steps is required such as the thinning and bonding of the wafer to a carrier prior to the formation of through-wafer vias, followed by the passivation and metallization of the vias. Despite the potential benefits associated with the integration of TSVs also significant challenges have to be overcome. One of the greatest challenges for present and even more for upcoming TSV design strategies still remains the processing of photoresist and other functional polymers at and within TSV geometries. To this day, it is still very difficult to achieve a conformal polymer coating in deep cavities, along steep side walls and especially within the extreme aspect ratios of TSV. Mainly this is due to the fact that standard surface coating methods such as spin coating were just not developed to meet the requirements posed by these high aspect ratio microstructures. New and innovative approaches are needed to meet these new challenges. Spray coating is one of the most promising technologies to overcome current barriers. However, even most of the available spray deposition equipment is facing its limits with steadily decreasing via diameters and increasing aspect ratios on the other hand. Successively, the multitude of these challenging technological developments in the 3D-IC and wafer-level packaging area has created the demand for innovative manufacturing approaches, new equipment and related tools. Herein we present our new EVG ®NanoSprayTM coating technology with unique capabilities to overcome the present limits of conformal resist coating over extreme topography. We demonstrate one particularly promising application for conformal polymer coatings; as an annular lining at the interface between the conducting metal filling in the TSV and the silicon wafer. The intrinsic properties of the polymer allow a TSV design solution that is more forgiving on coefficient of thermal expansion (CTE) mismatch-induced stress between the silicon substrate and the interfacing metal. Consequently, this new type of polymer buffered TSV interconnect design promises to significantly reduce thermal stress-induced TSV delamination as one of the dominant failure modes for 3-D interconnects. We further demonstrate the application of EVG ®NanoSprayTM as enabling coating technology for llithographic processing of conformal coated TSVs. The patterning of thin photoresist layers at the bottom of vias and along the steep sidewalls of deep cavities allows for more degrees of freedom in electrical contact formation. The presented EVG ®NanoSprayTM coating technology opens new dimensions in advanced wafer level packaging and provokes reconsidering prevailing limitations in interconnect design.

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