Optimization of Surface Preparation and Surface Passivation for GaSb Infrared Photodetectors

2007 ◽  
Vol 1 (1) ◽  
Author(s):  
G. Hearn ◽  
K. Banerjee ◽  
S. Mallick ◽  
S. Ghosh
Keyword(s):  
Surface Passivation ◽  
Surface Preparation ◽  
Infrared Photodetector ◽  
Voltage Measurement ◽  
Field Of Study ◽  
Metal Insulator ◽  
Ammonium Sulfide ◽  
Capacitance Voltage ◽  
Important Field

GaSb can be used as an efficient mid-wavelength infrared photodetector, so its improvement is an important field of study. The passivation of GaSb is not as effective as passivation of other semiconductors. We report on the use of surface treatments of Buffered Oxide Etch (BOE) and ammonium sulfide, and their effect on the quality of ZnS passivation. These treatments are compared using Capacitance-Voltage measurement of metal-insulator-semiconductors structures made from the treated GaSb.

A New Method For The Electronic And Chemical Passivation Of GaAs Surfaces Using CS2

1995 ◽  
Vol 406 ◽  
Author(s):  
Ju-Hyung Lee ◽  
Yanzhen Xu ◽  
Veronica A. Burrows ◽  
Paul F. McMillan
Keyword(s):  
Surface Passivation ◽  
Passivation Layer ◽  
Semiconductor Diode ◽  
Photoluminescence Intensity ◽  
Atmospheric Conditions ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Capacitance Voltage ◽  
Chemical Passivation ◽  
Homogeneous Film

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.

EFFECT OF SURFACE PASSIVATION ON CAPACITANCE–VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS

2011 ◽  
Vol 25 (04) ◽  
pp. 531-542
Author(s):  
CABİR TEMİRCİ ◽  
BAHRI BATI
Keyword(s):  
Chemical Treatment ◽  
Room Temperature ◽  
Surface Passivation ◽  
Anodic Oxide ◽  
Treatment Method ◽  
Schottky Contacts ◽  
Metal Insulator ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Effect Of Surface

We have fabricated the Sn/p-Si Schottky barrier diodes with the interfacial layer metal–insulator–semiconductor (D-MIS) and the surface passivation metal–semiconductor MS (D-MS) by the anodization or chemical treatment method. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the devices were measured at room temperature. We obtained that the excess capacitance (C0) value of the MIS Sn/p-Si diode with the anodic oxide layer of 16.88 pF and 0.12 pF for the MS Sn/p-Si ideal diode with the surface passivation by the anodization or chemical treatment method from reverse bias C–V characteristics. Thus, we have succeeded to diminish the excess capacitance value to the limit of 0.12 pF for the MS Sn/p-Si diode by using the anodization or chemical treatment method.

Optimization of Surface Passivation for InAs-GaSb Infrared Photodetector

2008 ◽  
Vol 2 (1) ◽  
Author(s):  
E. Meyer ◽  
K. Banerjee ◽  
S. Ghosh
Keyword(s):  
Indium Arsenide ◽  
Gallium Antimonide ◽  
Surface Passivation ◽  
Infrared Imaging ◽  
Type Ii ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Ammonium Sulfide ◽  
Strained Layer Superlattice ◽  
Long Wavelength Infrared

A type II indium arsenide / gallium antimonide (InAs-GaSb) strained layer superlattice (SLS) semiconductor is optimal for detecting long wavelength infrared (LWIR) signals for infrared imaging applications. However, as with all crystal structures dangling bonds at the surface of the semiconductor must be pacified with a passivant to maintain the integrity of the semiconductor. We report the most effective passivation layer for this III-V semiconductor by examining both the material and device characteristics of the devices pacified by silicon dioxide (SiO2), silicon nitride (SixNy), and zinc sulfide (ZnS). Our final reporting shows ZnS with a pre-passivation of ammonium sulfide ((NH4)2S) as being the most effective passivant.

Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C

2010 ◽  
Vol 49 (4) ◽  
pp. 04DF11 ◽  
Author(s):  
Cheng-Yu Hu ◽  
Hiroyuki Nokubo ◽  
Masanari Okada ◽  
Jin-Ping Ao ◽  
Yasuo Ohno
Keyword(s):  
Semiconductor Diode ◽  
Voltage Measurement ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage

A New Method for the Electronic and Chemical Passivation of GaAs Surfaces Using Cs2

1995 ◽  
Vol 405 ◽  
Author(s):  
Ju-Hyung Lee ◽  
Yanzhen Xu ◽  
Veronica A. Burrows ◽  
Paul F. McMillan
Keyword(s):  
Surface Passivation ◽  
Passivation Layer ◽  
Semiconductor Diode ◽  
Photoluminescence Intensity ◽  
Atmospheric Conditions ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Capacitance Voltage ◽  
Chemical Passivation ◽  
Homogeneous Film

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350 °C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred A. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (C-V) characteristics with low hysteresis.

Effect of Ar Annealing Temperature on SiO2/SiC: Carbon-Related Clusters Reduction Causing Interfacial Quality Improvement

2014 ◽  
Vol 997 ◽  
pp. 484-487 ◽  
Author(s):  
Zhi Qin Zhong ◽  
Lu Da Zheng ◽  
Guo Jun Zhang ◽  
Shu Ya Wang ◽  
Li Ping Dai ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Quality Improvement ◽  
Energy Dispersive Spectrometry ◽  
Annealing Temperature ◽  
Voltage Measurement ◽  
Capacitance Voltage ◽  
Different Temperatures ◽  
Scanning Electron

The authors investigated the effects of annealing in Ar atmosphere at different temperatures (350 °C, 600 °C, and 900 °C) on the thermally oxidized SiO2/4H-SiC interface. A strong correlation between C-related clusters reduction and SiO2/SiC interfacial improvement was observed. The C-related clusters, which were characterized by field-emission scanning electron microscopy, and energy-dispersive spectrometry, can be significantly reduced after annealing at moderate temperature (600 °C). This sample annealed at 600 °C exhibited the best interfacial quality of SiO2/SiC from capacitance–voltage measurement. Based on the studies, improvements in the quality of the SiO2/SiC interface after annealing at 600 °C may be explained by the reduction of C-related clusters during annealing.

An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces

2017 ◽  
Vol 897 ◽  
pp. 443-446 ◽  
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Yogesh K. Sharma ◽  
Guy Baker ◽  
Philip A. Mawby
Keyword(s):  
Surface Passivation ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Low Leakage ◽  
Semiconductor Interfaces ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Oxide Removal ◽  
The Impact

Schottky barrier diodes (SBD) were fabricated on SiC surfaces that had been treated with different surface passivation techniques, so that metal-semiconductor analysis could be used to evaluate the quality of this surface. In this paper, we discuss the results of this study that used Current-Voltage (I-V), Capacitance-Voltage (C-V) and Current-Voltage-Temperature (I-V-T) analysis to look at the impact of untreated oxidation, Nitrous oxide (N2O) and Phosphorus Silicate Glass (PSG) treatments prior to oxide removal, and the formation of Mo, Ni and Ti diodes. While the results of this study did not reveal any consistent patterns between the different treatments, a Mo diode formed on a surface after PSG treatment, displays exceptionally low leakage (4.44×10-5 A/cm2 at 19°C; 7.26×10-4 A/cm2 at 300°C) given a low barrier height (1.27 eV). Moreover, the barrier heights extracted from C-V analysis before contact annealing show a variation across all the diodes, suggesting that the interface is greatly suffering from Fermi-Level pinning, the result of significant interface traps.

scholarly journals Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3917
Author(s):  
Jung Sub Lee ◽  
Tae Young Ahn ◽  
Daewon Kim
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Treatment Time ◽  
Oxide Semiconductor ◽  
Native Oxide ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Ammonium Sulfide ◽  
Inp Substrate ◽  
Capacitance Voltage

Ammonium sulfide ((NH4)2S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH4)2S. It was found that a 10% (NH4)2S treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the depletion or accumulation mode. After the InP substrate was passivated by the optimized (NH4)2S, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density (Dit) proved that the growth of native oxide was suppressed.

Preparation and Characterization of Self-Assembled Monolayers on Germanium Surfaces

2009 ◽  
Vol 145-146 ◽  
pp. 169-172 ◽  
Author(s):  
Martin Lommel ◽  
Philipp Hönicke ◽  
Michael Kolbe ◽  
Matthias Müller ◽  
Falk Reinhardt ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Surface Preparation ◽  
Self Assembled Monolayers ◽  
Head Groups ◽  
Germanium Surface ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Controlled Preparation

The formation of self-assembled monolayers (SAMs) by specific organic molecules with appropriate anchor groups on semiconductor surfaces may be used to probe the chemical state and quality of the surface or to achieve surface passivation. Molecules with thiol anchor groups are able to bond to hydrogen-terminated germanium surfaces (Ge-S bond). We have prepared SAMs of alkylthiols with different head groups on germanium. Since the surface preparation of germanium is neither well understood nor developed, the controlled preparation of an oxide-free completely H-terminated surface which is a prerequisite for SAM formation of alkylthiols turned out to be a major challenge. Several approaches have been studied. The characterization of the germanium surface prior to and after SAMs formation has been performed by AFM, XPS, Synchrotron-TXRF and -NEXAFS.

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