The Microelectronic Radiomeasuring Transducers of Magnetic Field with a Frequency Output

1970 ◽  
Vol 110 (4) ◽  
pp. 67-70 ◽  
Author(s):  
V. S. Osadchuk ◽  
A. V. Osadchuk

In the given article the integrated circuits of transducers of a magnetic field in which magnetic sensitive transistors act in a role of active elements of autogenerating arrangements of transducers that simplifies circuits of sensor controls of a magnetic field are offered. It is shown, that for the complete embodying transducers in an integrated view the passive tuned-circuit inductance of the arrangement is implemented as the reactive transistor. The greatest sensitivity which changes from 7,2 kHz/mT up to 6,3 kHz/mT , the circuit design about a magnet a sensing element has on the basis of two collector bipolar transistors with the active inductive element. Ill. 9, bibl. 7 (in English; abstracts in English and Lithuanian).http://dx.doi.org/10.5755/j01.eee.110.4.289

Author(s):  
L.J. Chen ◽  
Y.F. Hsieh

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.


Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.


Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.


Author(s):  
Olivier Crépel ◽  
Philippe Descamps ◽  
Patrick Poirier ◽  
Romain Desplats ◽  
Philippe Perdu ◽  
...  

Abstract Magnetic field based techniques have shown great capabilities for investigation of current flows in integrated circuits (ICs). After reviewing the performances of SQUID, GMR (hard disk head technologies) and MTJ existing sensors, we will present results obtained on various case studies. This comparison will show the benefit of each approach according to each case study (packaged devices, flip-chip circuits, …). Finally we will discuss on the obtained results to classify current techniques, optimal domain of applications and advantages.


2020 ◽  
pp. 38-45
Author(s):  
В.В. Павлюченко ◽  
Е.С. Дорошевич

Based on the developed methods of hysteresis interference, the calculated dependences U(x) of the electric voltage taken from the magnetic field transducer on the x coordinate were obtained. A magnetic carrier with an arctangent characteristic was exposed to a series of bipolar pulses of the magnetic field of a linear inductor of one, two, three, four, five and fifteen pulses. An algorithm is presented for the sequence of changes in the magnitude of the total strength of the magnetic field pulses on the surface of an aluminum plate, which provides the same amplitude of hysteresis oscillations of the electric voltage and makes it possible to obtain a linear difference dependence U(x) for wedge-shaped and flat aluminum samples. The results obtained make it possible to increase the accuracy and efficiency of control of the thickness of the object and its thickness variation in the given directions, as well as the defects of the object.


Author(s):  
Ирина Викторовна Евстафьева

В статье исследуются вопросы попечительства в отношении несовершеннолетних, отбывающих наказание в виде лишения свободы. Проблема, поднимаемая автором настоящей статьи, многогранна, касается различных аспектов отбывания наказания несовершеннолетними в воспитательных колониях и требует комплексного исследования, способного ответить на определенно значимый вопрос: является ли колония законным представителем находящихся в ней несовершеннолетних со всеми вытекающими из статуса законных представителей последствиями. При этом необходимо обращать внимание на специфику правового статуса лиц, отбывающих наказание в воспитательных колониях, которые, во-первых, являются несовершеннолетними, то есть не обладают дееспособностью в полном объеме и нуждаются в особой заботе, защите и представительстве, а во-вторых, осуждены за совершение тяжкого или особо тяжкого преступления, влекущего изоляцию от общества и определенные ограничения и лишения. Отечественное законодательство достаточно детально регламентирует особенности режима отбывания наказания в виде лишения свободы несовершеннолетними, не определяя при этом статуса воспитательных колоний, кем они являются: воспитателями, попечителями или исключительно учреждениями исполнения наказаний. Между тем правильное понимание значения и роли воспитательной колонии в жизни находящихся в ней несовершеннолетних преступников, по мнению автора, поможет избежать ряда проблем, объективно складывающихся в учреждениях подобного рода. С этой точки зрения предлагаемая тема представляет интерес не только для ученых-теоретиков, но и для практиков - сотрудников соответствующих учреждений. Особо следует подчеркнуть, что исследований по данной тематике в специальной литературе нет. Отдельные исследования, встречающиеся в современной литературе, касаются исключительно общего гражданско-правового статуса несовершеннолетних осужденных. Однако это обстоятельство может свидетельствовать только о новизне данной темы, но никак не об отсутствии самой проблемы. The article analyzes the issues of the status of educational colonies as guardians of minors serving a sentence of imprisonment. In fact, the problem raised by the author of this article is multifaceted, concerns various aspects of the serving of punishment by minors in educational colonies and requires a comprehensive study that can answer, it seems, a definitely significant question: whether the colony is the legal representative of the minors in it with all the consequences arising from the status of legal representatives in the form of duties and responsibilities. At the same time, it seems, it is necessary to pay attention to the specifics of the legal status of citizens serving sentences in educational colonies, who, firstly, are minors, i.e. do not have full legal capacity and need special care, protection and representation, and, secondly, are convicted of committing a serious or particularly serious crime, entailing isolation from society and certain restrictions and deprivation. Domestic legislation regulates in sufficient detail the peculiarities of the regime of serving sentences in the form of deprivation of liberty by minors, without determining the status of educational colonies. Who are they: educators, Trustees or only institutions of execution of punishments. Meanwhile, the correct understanding of the importance and role of the educational colony in the life of juvenile offenders in it, according to the author, will help to avoid a number of problems that objectively develop in institutions of this kind. From this point of view, the proposed topic is of interest not only for theoretical scientists, but for practitioners-employees of relevant institutions. It should be emphasized that there are no studies on this subject in the special literature. However, this circumstance can testify only about novelty of the given subject, but in any way about absence of the problem. It seems that the relevance and importance of a problem is not always measured by the number of studies devoted to it. Sometimes these its traits are manifest only under particularly careful consideration.


Author(s):  
Thomas Köllen ◽  
Susanne Kopf

AbstractSo far, management research on mechanisms of exclusion of employee groups has mainly applied constructs of racism to understanding issues of origin-based ostracism. This research has primarily focused on issues faced by employees whose heritage is markedly different from the heritage shared by the norm group in the given socio-cultural, linguistic, and geographical setting. Against this backdrop, the present study investigates how ostracism plays out when the heritages involved are similar, as exemplified by German employees in Austria. Study 1 examines the discursive production of Austrian stereotyping of Germans in the usage of different terms of reference for ‘Germans’ in Austrian discourse. A corpus analysis of online comments on newspaper sites highlights the implicit Austrian need for delineation against Germany. Study 2 analyzes Germans’ perception of Austrians’ exclusionary linguistic practices and how this impacts on their employment experience and turnover intention. A quantitative analysis of survey data from 600 German nationals employed in Austria reveals that the degree of exposure to these demarcating practices is associated with lower job satisfaction, a higher burnout level and an increase in turnover intention. This study is amongst the first to shed light on the central role of nationalism and national identities in organizational mechanisms of exclusion.


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