scholarly journals Electrical Characteristics and Reliability of SiCN/ Porous SiOCH Stacked Dielectric: Effects of Deposition Temperature of SiCN Film

2021 ◽  
Author(s):  
Yi-Lung Cheng ◽  
Yu-Lu Lin ◽  
Wei-Fan Peng ◽  
Chih-Yen Lee ◽  
Yow-Jon Lin
Keyword(s):  
Deposition Temperature ◽  
Silicon Oxide ◽  
Dielectric Breakdown ◽  
Semiconductor Industry ◽  
Silicon Carbonitride ◽  
Dielectric Films ◽  
Future Research ◽  
Electrical Stress ◽  
Reliability Characteristics ◽  
Different Temperatures

Abstract Silicon carbonitride (SiCN) films deposited using silazane singe-precursor with different temperatures were capped onto porous carbon-doped silicon oxide (p-SiOCH) dielectric films. Effects on the electrical and reliability characteristics of the fabricated SiCN/p-SiOCH stacked dielectrics were investigated. Experimental results indicated that increasing the deposition temperature of the SiCN film increased barrier capacity against Cu migration under thermal and electrical stress and time-dependence-dielectric-breakdown reliability for the SiCN/p-SiOCH stacked dielectric. Therefore, this study provides a promising processing to deposit a SiCN barrier by elevating the deposition temperature and using N-methyl-aza-2,2,4-trimethylsilacyclopentane singe-precursor, which can be applied to back-end-of-line interconnects for advanced technological nodes in the semiconductor industry. A larger capacitance, however, is the main issue due to a larger intrinsic dielectric constant of the SiCN film and stronger plasma-induced damage on the p-SiOCH film. As a result, the related actions will be taken in the future research to improve this issue.

Micromechanical Characterization of Dielectric Thin Films

1993 ◽  
Vol 308 ◽  
Author(s):  
James M. Grow
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Silicon Carbonitride ◽  
Dielectric Thin Films ◽  
Micromechanical Characterization

ABSTRACTA nanoindenter has been used to obtain Young's modulus and hardness data for a variety of dielectric thin films including silicon carbide, boron nitride, silicon carbonitride, and silicon oxide. These films, were synthesized by low pressure and plasma enhanced chemical vapor deposition, and had a thickness from 0.25 to a few microns. For the BN films, the modulus and hardness of the films decreased significantly as the deposition temperature increased while the reverse was true for the SiC films. In both cases, these changes were related to variations in the compositions of the deposits due to the onset of different reactions as the temperature is increased. Silicon carbonitride films oxidized slowly when synthesized at temperatures below 200º C and the Young's modulus of these films increased at higher deposition temperatures. For silicon dioxide, there was little change in the composition of the films over the deposition temperature range investigated (375–475º C), thus correspondingly, small variations in the micromechanical properties of the material. However, moisture and hydrogen removal caused by an anneal at 800º C resulted in an significant increase in the modulus and hardness of these films.

Studies of Pecvd and Ozone CVD Deposition Rate, Uniformity and Step Coverage

1994 ◽  
Vol 363 ◽  
Author(s):  
Xin Guo ◽  
J. Zhao ◽  
J. Qiao ◽  
A. Tabata ◽  
B. Pang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Deposition Rate ◽  
Silicon Oxide ◽  
Driving Forces ◽  
Semiconductor Industry ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Plasma Ionization ◽  
Plasma Enhanced Cvd ◽  
Almost All

AbstractChemical vapor deposition (CVD) has been used to deposit films such as silicon, silicon oxide, silicon nitride, tungsten, silicide, copper and titanium nitride in the semiconductor industry. The reaction driving forces for CVD are typically temperature for thermal CVD, plasma ionization for plasma enhanced CVD, or atomic oxygen for ozone CVD. In the recent years, plasma enhanced CVD (PECVD) and ozone CVD have found extensive applications in the semiconductor industry, due to the higher deposition rate and lower deposition temperature. For example, PECVD and ozone CVD are used to deposit almost all dielectric films such as silicon oxide and silicon nitride on a wafer. The dielectric films on wafers serve as insulating layers between conducting metal layers and as passivation layer on top of semiconductor devices.

Defect Analysis and Reliability Characteristics of (HfZrO4)1−x(SiO2)x High-κ Dielectrics

2020 ◽  
Vol 20 (11) ◽  
pp. 6718-6722
Author(s):  
Areum Park ◽  
Pyungho Choi ◽  
Woojin Jeon ◽  
Donghyeon Lee ◽  
Donghee Choi ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Flat Band ◽  
Defect Analysis ◽  
Positive Direction ◽  
Reliability Characteristics ◽  
Capacitance Voltage ◽  
Bias Temperature Stress ◽  
Curve Shift

Hafnium zirconium silicon oxide ((HfZrO4)1−x(SiO2)x) materials were investigated through the defect analysis and reliability characterization for next generation high-κ dielectric. Silicate doped hafnium zirconium oxide (HfZrO4) films showed a reduction of negative flat-band voltage (Vfb) shift compared to pure HfZrO4. This result was caused by a decrease in donor-like interface traps (Dit) and positive border traps (Nbt). As the silicon oxide (SiO2) content increased, the Vfb was shifted in the positive direction from −1.23 to −1.10 to −0.91 V and the slope of the capacitance–voltage (C–V) curve increased. The nonparallel shift of the C–V characteristics was affected by the Dit, while the Nbt was responsible for the parallel C–V curve shift. The values of Dit reduced from 4.3 × 1011, 3.5 × 1011, and 3.0 × 1011 cm−2eV−1, as well as the values of Nbt were decreased from 5.24, 3.90 to 2.26 × 1012 cm−2. Finally, reduction of defects in the HfZrO4-base film with an addition of SiO2 affected the gate oxide reliability characteristics, such as gate leakage current (JG), bias temperature stress instability (BTSI), and time dependent gate dielectric breakdown (TDDB).

scholarly journals An Experimental Study of the Decomposition and Carbonation of Magnesium Carbonate for Medium Temperature Thermochemical Energy Storage

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1316
Author(s):  
Daniel Mahon ◽  
Gianfranco Claudio ◽  
Philip Eames
Keyword(s):  
Thermal Analysis ◽  
Thermal Decomposition ◽  
Energy Storage ◽  
Magnesium Carbonate ◽  
Experimental Results ◽  
Future Research ◽  
Medium Temperature ◽  
Different Temperatures ◽  
Decomposition Enthalpy ◽  
Co2 Atmosphere

To improve the energy efficiency of an industrial process thermochemical energy storage (TCES) can be used to store excess or typically wasted thermal energy for utilisation later. Magnesium carbonate (MgCO3) has a turning temperature of 396 °C, a theoretical potential to store 1387 J/g and is low cost (~GBP 400/1000 kg). Research studies that assess MgCO3 for use as a medium temperature TCES material are lacking, and, given its theoretical potential, research to address this is required. Decomposition (charging) tests and carbonation (discharging) tests at a range of different temperatures and pressures, with selected different gases used during the decomposition tests, were conducted to gain a better understanding of the real potential of MgCO3 for medium temperature TCES. The thermal decomposition (charging) of MgCO3 has been investigated using thermal analysis techniques including simultaneous thermogravimetric analysis and differential scanning calorimetry (TGA/DSC), TGA with attached residual gas analyser (RGA) and diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) (up to 650 °C). TGA, DSC and RGA data have been used to quantify the thermal decomposition enthalpy from each MgCO3.xH2O thermal decomposition step and separate the enthalpy from CO2 decomposition and H2O decomposition. Thermal analysis experiments were conducted at different temperatures and pressures (up to 40 bar) in a CO2 atmosphere to investigate the carbonation (discharging) and reversibility of the decarbonation–carbonation reactions for MgCO3. Experimental results have shown that MgCO3.xH2O has a three-step thermal decomposition, with a total decomposition enthalpy of ~1050 J/g under a nitrogen atmosphere. After normalisation the decomposition enthalpy due to CO2 loss equates to 1030–1054 J/g. A CO2 atmosphere is shown to change the thermal decomposition (charging) of MgCO3.xH2O, requiring a higher final temperature of ~630 °C to complete the decarbonation. The charging input power of MgCO3.xH2O was shown to vary from 4 to 8136 W/kg with different isothermal temperatures. The carbonation (discharging) of MgO was found to be problematic at pressures up to 40 bar in a pure CO2 atmosphere. The experimental results presented show MgCO3 has some characteristics that make it a candidate for thermochemical energy storage (high energy storage potential) and other characteristics that are problematic for its use (slow discharge) under the experimental test conditions. This study provides a comprehensive foundation for future research assessing the feasibility of using MgCO3 as a medium temperature TCES material. Future research to determine conditions that improve the carbonation (discharging) process of MgO is required.

Molecular beam deposition of high quality silicon oxide dielectric films

1995 ◽  
Vol 148 (4) ◽  
pp. 336-344 ◽  
Author(s):  
Naresh Chand ◽  
J.E. Johnson ◽  
J.W. Osenbach ◽  
W.C. Liang ◽  
L.C. Feldman ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Silicon Oxide ◽  
Dielectric Films ◽  
High Quality ◽  
Molecular Beam Deposition ◽  
Beam Deposition

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

scholarly journals A gender bias in the calcification response to ocean acidification

2011 ◽  
Vol 8 (4) ◽  
pp. 8485-8513 ◽  
Author(s):  
M. Holcomb ◽  
A. L. Cohen ◽  
D. C. McCorkle
Keyword(s):  
Ocean Acidification ◽  
Elevated Co2 ◽  
Egg Production ◽  
Elevated Pco2 ◽  
Future Research ◽  
Astrangia Poculata ◽  
Population Structures ◽  
Different Temperatures ◽  
Increased Sensitivity ◽  
Ambient Co2

Abstract. The effects of nutrients and pCO2 on zooxanthellate and azooxanthellate colonies of the temperate scleractinian coral Astrangia poculata (Ellis and Solander, 1786) were investigated at two different temperatures (16 °C and 24 °C). Corals exposed to elevated pCO2 tended to have lower relative calcification rates, as estimated from changes in buoyant weights. No nutrient effect was observed. At 16 °C, gamete release was not observed, and no gender differences in calcification rate were observed. However, corals grown at 24 °C spawned repeatedly and male and female corals exhibited two different growth rate patterns. Female corals grown at 24 °C and exposed to CO2 had calcification rates 39 % lower than females grown at ambient CO2, while males showed only a 5 % decline in calcification under elevated CO2. At 16 °C, female and male corals showed similar reductions in calcification rates in response to elevated CO2 (15 % and 19 % respectively). At 24 °C, corals spawned repeatedly, while no spawning was observed at 16 °C. The increased sensitivity of females to elevated pCO2 may reflect a greater investment of energy in reproduction (egg production) relative to males (sperm production). These results suggest that both gender and spawning are important factors in determining the sensitivity of corals to ocean acidification and their inclusion in future research may be critical to predicting how the population structures of marine calcifiers will change in response to ocean acidification.

Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 468-471 ◽  
Author(s):  
Yuki Mori ◽  
Mieko Matsumura ◽  
Hirotaka Hamamura ◽  
Toshiyuki Mine ◽  
Akio Shima ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Dielectric Breakdown ◽  
Optical Emission ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tem Analysis ◽  
Mos Capacitor ◽  
Step Bunching ◽  
Electrical Stress

The mechanism of dielectric breakdown of oxide on step-bunching of 4H-silicon carbide (SiC) was investigated. Comparing the surface morphology obtained before forming metal-oxide-semiconductor (MOS) capacitor and optical emission on the capacitor under electrical stress, it was cleared that current concentrates on step-bunching and it often caused preferential dielectric breakdown. Based on TEM analysis and the observation of time dependence of emission under the stress, a new model was proposed to explain the dielectric breakdown on step-bunching.

scholarly journals Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 155
Author(s):  
Yi-Lung Cheng ◽  
Chih-Yen Lee ◽  
Wei-Fan Peng ◽  
Giin-Shan Chen ◽  
Jau-Shiung Fang
Keyword(s):  
Dielectric Film ◽  
Alloy Film ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Electrical Characteristics ◽  
Sputtering Deposition ◽  
Cu Interconnects ◽  
Low Dielectric ◽  
Reliability Characteristics ◽  
Low K

In this study, Cu-2.2 at. % Nd alloy films using a co-sputtering deposition method were directly deposited onto porous low-dielectric-constant (low-k) films (SiOCH). The effects of CuNd alloy film on the electrical properties and reliability of porous low-k dielectric films were studied. The electrical characteristics and reliability of the porous low-k dielectric film with CuNd alloy film were enhanced by annealing at 425 °C. The formation of self-forming barrier at the CuNd/SiOCH interface was responsible for this improvement. Therefore, integration with CuNd and porous low-k dielectric is a promising process for advanced Cu interconnects.

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