Time Voltage Dependency in Resistance Switching TiO2

2012 ◽  
Vol 1430 ◽  
Author(s):  
Christian Nauenheim ◽  
Dominique Drouin ◽  
Rainer Waser ◽  
Andreas Ruediger
Keyword(s):  
Operation Time ◽  
Memory Cell ◽  
High Resistance State ◽  
Memory Systems ◽  
Resistance Switching ◽  
Additional Insight ◽  
Metal Insulator Metal ◽  
Resistance State ◽  
Multi Level ◽  
Insight Into

ABSTRACTResistively switching TiO2 thin films show a multitude of resistance states, which are achieved during the programming and erasing of a memory cell. These resistance states depend on the applied voltage and the allowed current. Additionally, the operation time has a relevant influence on the adjusted resistance. This parameterization points out a potential application in future multi-level cell memory systems, but also determines the persistence of the non-volatile nature and provides an additional insight into the physics of the resistance switching. Our devices consist of metal-insulator-metal stacks made of Pt/TiO2/Ti/Pt, which are built up in crosspoint junctions. The maximum programming current and the maximum erase voltage amplitude were used to tune in the low resistance and high resistance state, respectively, in combination with the operation time. The corresponding dependencies were determined by quasi-static voltage sweeps, pulse bursts and single pulses of up to 4 V and down to 10 ns.

Insight into Distribution and Switching of ReRAM Filaments Based on Variation Analysis of Memory Characteristics

2012 ◽  
Vol 1406 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Hayato Tanaka ◽  
Masataka Yoshihara ◽  
Satoru Kishida
Keyword(s):  
Memory Cell ◽  
High Resistance State ◽  
Mean Value ◽  
Switching Cycle ◽  
Variation Analysis ◽  
Resistance State ◽  
The Mean ◽  
The Difference ◽  
Memory Characteristics ◽  
Insight Into

ABSTRACTA hypothesis that probability giving Δ(1/Vset) [= 1/Vset(n) - 1/Vset(n+1)] > 0, P[Δ(1/Vset) > 0], increases with increasing the number of filaments contained in one memory cell, Nfila, and decreases with increasing switching cycle, n, was made to validate a multi-filament model (MFM) as a mechanism causing the cycle to cycle dispersion of Vset in ReRAM. Here, Δ(1/Vset) is the difference between the inverse of set voltages after n-th and (n+1)-th reset processes. This in turn means that Vset will decrease with increasing Nfila and will increase with increasing n. In addition, another hypothesis that probability giving Δ(1/R) [= 1/Rn - 1/Rn+1] > 0, P[Δ(1/R) > 0], agrees with P[Δ(1/Vset) > 0] was made by incorporating the assumption that vset depends on d with the MFM. Here, Rn, vset, and d represent resistance in high resistance state after the n-th reset process, the set voltage of each filament, and the thickness of a gap between the electrode and the edge of the filament. The validity of these two hypotheses were confirmed by measuring the dependence of P[Δ(1/Vset) > 0], P[Δ(1/R) > 0], and the mean value of Vset, <Vset>, on both the length of the perimeter, L, and n of Pt/NiO/Pt structures to which filaments were introduced by etching the NiO layer.

Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation

2020 ◽  
Vol 20 (5) ◽  
pp. 3283-3286 ◽  
Author(s):  
Yuehua An ◽  
Xia Shen ◽  
Yuying Hao ◽  
Pengfei Guo ◽  
Weihua Tang
Keyword(s):  
Ultraviolet Radiation ◽  
High Resistance ◽  
High Resistance State ◽  
High Ratio ◽  
Resistance Switching ◽  
Resistive State ◽  
Oxide Systems ◽  
Low Resistance ◽  
Resistance State

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I–V characteristics of Au/Ti/β-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.

Resistive Switching Characteristics of Nonvolatile Memory with HSQ Film Using Microwave Irradiation

2020 ◽  
Vol 20 (8) ◽  
pp. 4740-4745
Author(s):  
Shin-Yi Min ◽  
Won-Ju Cho
Keyword(s):  
Molecular Structure ◽  
Microwave Irradiation ◽  
Conduction Mechanism ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
High Resistance State ◽  
High Energy ◽  
Metal Insulator Metal ◽  
Resistance State

In this study, we fabricated a resistive random access memory (ReRAM) of metal-insulator-metal structures using a hydrogen silsesquioxane (HSQ) film that was deposited by a low-cost solution process as a resistance switching (RS) layer. For post-deposition annealing (PDA) to improve the switching performance of HSQ-based ReRAMs, we applied high energy-efficient microwave irradiation (MWI). For comparison, ReRAMs with an as-deposited HSQ layer or a conventional thermally annealed (CTA) HSQ layer were also prepared. The RS characteristics, molecular structure modification of the HSQ layer, and reliability of the MWI-treated ReRAM were evaluated and compared with the as-deposited or CTA-treated devices. Typical bipolar RS (BRS) behavior was observed in all the fabricated HSQ-based ReRAM devices. In the low-voltage region of the high-resistance state (HRS) as well as the low-resistance state, current flows through the HSQ layer by an ohmic conduction mechanism. However, as the applied voltage increases in HRS, the current slope increases nonlinearly and follows the Poole–Frenkel conduction mechanism. The RS characteristics of the HSQ layer depend on the molecular structure, and when the PDA changes from a cage-like structure to a cross-linked network, memory characteristics are improved. In particular, the MWI-treated HSQ ReRAM has the largest memory window at the smallest operating power and demonstrated a stable endurance during the DC cycling test over 500 times and reliable retention at room (25 °C) and high (85 °C) temperatures for 104 seconds.

scholarly journals Biomaterial-based Nonvolatile Photonic Memristor

2021 ◽  
Author(s):  
Yu-Chi Chang ◽  
Jia-Cheng Jian ◽  
Ya-lan Hsu ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
High Speed ◽  
Surface Defects ◽  
Green Light ◽  
High Resistance State ◽  
Light Illumination ◽  
Neuromorphic Computing ◽  
Metal Insulator Metal ◽  
Device Structures ◽  
Resistance State ◽  
Nio Nps

Abstract A photonic memristor is a component used in photonic and neuromorphic computing that can complete the high-speed programming of nonvolatile data through light illumination`. To date, photonic memristors have been fabricated using several methods. Applied principles include the photovoltaic (PV) effect-mediated Schottky barrier, PV effect-induced formation/annihilation of conductive filaments, photogating effect and photoinduced chemical reaction/conformation change5. However, currently proposed solutions are half sets only (i.e. either light writing or light erasing only), photoinduced electrical programming or photovoltaically modulated6-9. Moreover, these devices frequently require the use of special materials or complex device structures and circuitries5. Here, we used a mixture of apple pectin (AP) and nickel oxide (NiO) nanoparticles (NPs) as the resistive switching layer and fabricated a simple metal/insulator/metal sandwich structure. The surface defects between the interface of AP and NiO NPs can capture ultraviolet-excited electrons and convert the resistance state into low-resistance state (LRS). By expelling the electrons in the traps through green light, LRS can be transformed back into high-resistance state. The memory can be programmed purely through light and is compatible with electrical operation. This discovery provides a reliable method for fabricating photonic memristors that can be adopted in photonic and neuromorphic computing applications.

Building resistive switching memory having super-steep switching slope with in-plane boron nitride

2021 ◽  
Author(s):  
Yisen Wang ◽  
Zhifang Huang ◽  
Xinyi Chen ◽  
Miao Lu
Keyword(s):  
Boron Nitride ◽  
Metal Ions ◽  
Resistive Switching ◽  
Hexagonal Boron Nitride ◽  
High Resistance State ◽  
Two Dimensional ◽  
Horizontal Structure ◽  
Metal Insulator Metal ◽  
Resistance State ◽  
Pass Through

Abstract The two-dimensional hexagonal boron nitride (h-BN) has been used as resistive switching (RS) material for memory due to its insulation, good thermal conductivity and excellent thermal/chemical stability. A typical h-BN based RS memory employs a Metal-Insulator-Metal (MIM) vertical structure, in which metal ions pass through the h-BN layers to realize the transition from high resistance state (HRS) to low resistance state (LRS). Alternatively, just like the horizontal structure widely used in the traditional MOS capacitor based memory, the performance of in-plane h-BN memory should also be evaluated to determine its potential applications. As consequence, a horizontal structured resistive memory has been designed in this work by forming freestanding h-BN across Ag nanogap, where the two-dimensional h-BN favored in-plane transport of metal ions to emphasize the RS behavior. As a result, the memory devices showed switching slope down to 0.25 mV/dec, ON/OFF ratio up to 1E8, SET current down to pA and SET voltage down to 180 mV.

scholarly journals Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 95 ◽  
Author(s):  
Paolo Bondavalli ◽  
Marie Martin ◽  
Louiza Hamidouche ◽  
Alberto Montanaro ◽  
Aikaterini-Flora Trompeta ◽  
...  
Keyword(s):  
Random Access ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Deposition Method ◽  
Metal Insulator Metal ◽  
Oxidized Carbon ◽  
Resistance State ◽  
Scientific Group ◽  
First Time ◽  
Spray Gun

This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray-gun deposition method, developed at Thales Research and Technology. This technique allows extremely uniform mats to be produced while heating the substrate at the boiling point of the solvent used for the suspensions. A thickness of around 150 nm of CNFs sandwiched between two metal layers (the metalized substrate and the top contacts) has been achieved, creating a Metal-Insulator-Metal (MIM) structure typical of ReRAM. After applying a bias, we were able to change the resistance of the oxidized layer between a low (LRS) and a high resistance state (HRS) in a completely reversible way. This is the first time that a scientific group has produced this kind of device using CNFs and these results pave the way for the further implementation of this kind of memory on flexible substrates.

scholarly journals Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2222
Author(s):  
Hassan Aziza ◽  
Said Hamdioui ◽  
Moritz Fieback ◽  
Mottaqiallah Taouil ◽  
Mathieu Moreau ◽  
...  
Keyword(s):  
High Capacity ◽  
Average Energy ◽  
High Resistance State ◽  
Level Control ◽  
Power Efficient ◽  
Analog Resistance ◽  
Resistance State ◽  
Multi Level ◽  
Average Energy Consumption ◽  
First Time

RRAM density enhancement is essential not only to gain market share in the highly competitive emerging memory sector but also to enable future high-capacity and power-efficient brain-inspired systems, beyond the capabilities of today’s hardware. In this paper, a novel design scheme is proposed to realize reliable and uniform multi-level cell (MLC) RRAM operation without the need of any read verification. RRAM quad-level cell (QLC) capability with 4 bits/cell is demonstrated for the first time. QLC is implemented based on a strict control of the cell programming current of 1T-1R HfO2-based RRAM cells. From a design standpoint, a self-adaptive write termination circuit is proposed to control the RESET operation and provide an accurate tuning of the analog resistance value of each cell of a memory array. The different resistance levels are obtained by varying the compliance current in the RESET direction. Impact of variability on resistance margins is simulated and analyzed quantitatively at the circuit level to guarantee the robustness of the proposed MLC scheme. The minimal resistance margin reported between two consecutive states is 2.1 kΩ along with an average energy consumption and latency of 25 pJ/cell and 1.65 μs, respectively.

Effect of Substrate on Memristive Switching of Pr0.7Ca0.3MnO3

2013 ◽  
Vol 209 ◽  
pp. 198-202 ◽  
Author(s):  
Komal H. Bhavsar ◽  
Utpal S. Joshi
Keyword(s):  
High Resistance ◽  
Lattice Mismatch ◽  
High Resistance State ◽  
Grazing Incidence ◽  
Resistance Switching ◽  
Planar Geometry ◽  
Perovskite Manganite ◽  
Electrical Measurements ◽  
Induce Resistance ◽  
Resistance State

. Perovskite manganite Pr0.7Ca0.3MnO3 (PCMO) thin film nanostructures were grown on different substrates by chemical solution deposition to investigate its electrical switching properties. Planar structures consisting of Ag/Pr0.7Ca0.3MnO3/Ag grown on SiO2, Si (100), LaAlO3 (100) and MgO (100) were characterized by grazing incidence X-ray diffraction, atomic force microscopy and electrical measurements. In each case, single PCMO phase formation and smooth surface morphology was confirmed by XRD and AFM, respectively. Four terminal current voltage characteristics of Ag/PCMO/Ag planar geometry exhibited a sharp transition from a low resistance state (LRS) to a high resistance state (HRS) with a high resistance switching ratios of the order of 950 for PCMO films grown on quartz was estimated at room temperature. High resistance switching ratios were found to depend on the substrate, suggesting a role of lattice mismatch for resistance switching. We have observed that higher mismatch lead to better resistance switching in this compound. The observed conduction characteristics provide direct evidence of substrate strain induce resistance switching in the Pr0.7Ca0.3MnO3.

Effect of internal field on the high resistance state retention of unipolar resistance switching in ferroelectric vanadium doped ZnO

2017 ◽  
Vol 110 (14) ◽  
pp. 143502 ◽  
Author(s):  
Changjin Wu ◽  
Yuefa Jia ◽  
Yeong Jae Shin ◽  
Tae Won Noh ◽  
Seung Chul Chae ◽  
...  
Keyword(s):  
High Resistance ◽  
High Resistance State ◽  
Internal Field ◽  
Resistance Switching ◽  
Resistance State ◽  
Doped Zno

scholarly journals Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Fu-Chien Chiu
Keyword(s):  
Pulse Width ◽  
Nonvolatile Memory ◽  
High Resistance State ◽  
Resistance Switching ◽  
Memory Devices ◽  
Reset Voltage ◽  
Conducting Path ◽  
Nonvolatile Memory Devices ◽  
Resistance State ◽  
Switching Characteristics

Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

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