scholarly journals Biomaterial-based Nonvolatile Photonic Memristor

2021 ◽  
Author(s):  
Yu-Chi Chang ◽  
Jia-Cheng Jian ◽  
Ya-lan Hsu ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
High Speed ◽  
Surface Defects ◽  
Green Light ◽  
High Resistance State ◽  
Light Illumination ◽  
Neuromorphic Computing ◽  
Metal Insulator Metal ◽  
Device Structures ◽  
Resistance State ◽  
Nio Nps

Abstract A photonic memristor is a component used in photonic and neuromorphic computing that can complete the high-speed programming of nonvolatile data through light illumination`. To date, photonic memristors have been fabricated using several methods. Applied principles include the photovoltaic (PV) effect-mediated Schottky barrier, PV effect-induced formation/annihilation of conductive filaments, photogating effect and photoinduced chemical reaction/conformation change5. However, currently proposed solutions are half sets only (i.e. either light writing or light erasing only), photoinduced electrical programming or photovoltaically modulated6-9. Moreover, these devices frequently require the use of special materials or complex device structures and circuitries5. Here, we used a mixture of apple pectin (AP) and nickel oxide (NiO) nanoparticles (NPs) as the resistive switching layer and fabricated a simple metal/insulator/metal sandwich structure. The surface defects between the interface of AP and NiO NPs can capture ultraviolet-excited electrons and convert the resistance state into low-resistance state (LRS). By expelling the electrons in the traps through green light, LRS can be transformed back into high-resistance state. The memory can be programmed purely through light and is compatible with electrical operation. This discovery provides a reliable method for fabricating photonic memristors that can be adopted in photonic and neuromorphic computing applications.

Resistive Switching Characteristics of Nonvolatile Memory with HSQ Film Using Microwave Irradiation

2020 ◽  
Vol 20 (8) ◽  
pp. 4740-4745
Author(s):  
Shin-Yi Min ◽  
Won-Ju Cho
Keyword(s):  
Molecular Structure ◽  
Microwave Irradiation ◽  
Conduction Mechanism ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
High Resistance State ◽  
High Energy ◽  
Metal Insulator Metal ◽  
Resistance State

In this study, we fabricated a resistive random access memory (ReRAM) of metal-insulator-metal structures using a hydrogen silsesquioxane (HSQ) film that was deposited by a low-cost solution process as a resistance switching (RS) layer. For post-deposition annealing (PDA) to improve the switching performance of HSQ-based ReRAMs, we applied high energy-efficient microwave irradiation (MWI). For comparison, ReRAMs with an as-deposited HSQ layer or a conventional thermally annealed (CTA) HSQ layer were also prepared. The RS characteristics, molecular structure modification of the HSQ layer, and reliability of the MWI-treated ReRAM were evaluated and compared with the as-deposited or CTA-treated devices. Typical bipolar RS (BRS) behavior was observed in all the fabricated HSQ-based ReRAM devices. In the low-voltage region of the high-resistance state (HRS) as well as the low-resistance state, current flows through the HSQ layer by an ohmic conduction mechanism. However, as the applied voltage increases in HRS, the current slope increases nonlinearly and follows the Poole–Frenkel conduction mechanism. The RS characteristics of the HSQ layer depend on the molecular structure, and when the PDA changes from a cage-like structure to a cross-linked network, memory characteristics are improved. In particular, the MWI-treated HSQ ReRAM has the largest memory window at the smallest operating power and demonstrated a stable endurance during the DC cycling test over 500 times and reliable retention at room (25 °C) and high (85 °C) temperatures for 104 seconds.

Building resistive switching memory having super-steep switching slope with in-plane boron nitride

2021 ◽  
Author(s):  
Yisen Wang ◽  
Zhifang Huang ◽  
Xinyi Chen ◽  
Miao Lu
Keyword(s):  
Boron Nitride ◽  
Metal Ions ◽  
Resistive Switching ◽  
Hexagonal Boron Nitride ◽  
High Resistance State ◽  
Two Dimensional ◽  
Horizontal Structure ◽  
Metal Insulator Metal ◽  
Resistance State ◽  
Pass Through

Abstract The two-dimensional hexagonal boron nitride (h-BN) has been used as resistive switching (RS) material for memory due to its insulation, good thermal conductivity and excellent thermal/chemical stability. A typical h-BN based RS memory employs a Metal-Insulator-Metal (MIM) vertical structure, in which metal ions pass through the h-BN layers to realize the transition from high resistance state (HRS) to low resistance state (LRS). Alternatively, just like the horizontal structure widely used in the traditional MOS capacitor based memory, the performance of in-plane h-BN memory should also be evaluated to determine its potential applications. As consequence, a horizontal structured resistive memory has been designed in this work by forming freestanding h-BN across Ag nanogap, where the two-dimensional h-BN favored in-plane transport of metal ions to emphasize the RS behavior. As a result, the memory devices showed switching slope down to 0.25 mV/dec, ON/OFF ratio up to 1E8, SET current down to pA and SET voltage down to 180 mV.

scholarly journals Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 95 ◽  
Author(s):  
Paolo Bondavalli ◽  
Marie Martin ◽  
Louiza Hamidouche ◽  
Alberto Montanaro ◽  
Aikaterini-Flora Trompeta ◽  
...  
Keyword(s):  
Random Access ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Deposition Method ◽  
Metal Insulator Metal ◽  
Oxidized Carbon ◽  
Resistance State ◽  
Scientific Group ◽  
First Time ◽  
Spray Gun

This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray-gun deposition method, developed at Thales Research and Technology. This technique allows extremely uniform mats to be produced while heating the substrate at the boiling point of the solvent used for the suspensions. A thickness of around 150 nm of CNFs sandwiched between two metal layers (the metalized substrate and the top contacts) has been achieved, creating a Metal-Insulator-Metal (MIM) structure typical of ReRAM. After applying a bias, we were able to change the resistance of the oxidized layer between a low (LRS) and a high resistance state (HRS) in a completely reversible way. This is the first time that a scientific group has produced this kind of device using CNFs and these results pave the way for the further implementation of this kind of memory on flexible substrates.

Time Voltage Dependency in Resistance Switching TiO2

2012 ◽  
Vol 1430 ◽  
Author(s):  
Christian Nauenheim ◽  
Dominique Drouin ◽  
Rainer Waser ◽  
Andreas Ruediger
Keyword(s):  
Operation Time ◽  
Memory Cell ◽  
High Resistance State ◽  
Memory Systems ◽  
Resistance Switching ◽  
Additional Insight ◽  
Metal Insulator Metal ◽  
Resistance State ◽  
Multi Level ◽  
Insight Into

ABSTRACTResistively switching TiO2 thin films show a multitude of resistance states, which are achieved during the programming and erasing of a memory cell. These resistance states depend on the applied voltage and the allowed current. Additionally, the operation time has a relevant influence on the adjusted resistance. This parameterization points out a potential application in future multi-level cell memory systems, but also determines the persistence of the non-volatile nature and provides an additional insight into the physics of the resistance switching. Our devices consist of metal-insulator-metal stacks made of Pt/TiO2/Ti/Pt, which are built up in crosspoint junctions. The maximum programming current and the maximum erase voltage amplitude were used to tune in the low resistance and high resistance state, respectively, in combination with the operation time. The corresponding dependencies were determined by quasi-static voltage sweeps, pulse bursts and single pulses of up to 4 V and down to 10 ns.

scholarly journals MoS2 memristor with photoresistive switching

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Wei Wang ◽  
Gennady N. Panin ◽  
Xiao Fu ◽  
Lei Zhang ◽  
P. Ilanchezhiyan ◽  
...  
Keyword(s):  
Electric Field ◽  
White Light ◽  
Cost Effective ◽  
High Resistance State ◽  
Light Illumination ◽  
Resistive State ◽  
New Device ◽  
Multifunctional Device ◽  
Resistance State ◽  
White Light Illumination

Abstract A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.

scholarly journals Bipolar resistive switching on Ti/TiO2/NiCr memory cells

2017 ◽  
Vol 30 (4) ◽  
pp. 65-68
Author(s):  
Eric Hernandez Rodriguez ◽  
Alfredo Marquez Herrera ◽  
Miguel Melendez Lira ◽  
Enrique Valaguez Velazquez ◽  
Martin Zapata Torres
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Rf Sputtering ◽  
High Resistance State ◽  
Switching Behavior ◽  
Emission Model ◽  
Tio2 Thin Films ◽  
Bipolar Resistive Switching ◽  
Metal Insulator Metal ◽  
Resistance State

We investigated the electric-field-induced resistance-switching behavior of metal-insulator-metal (MIM) cells based on TiO2 thin films fabricated by the reactive RF-sputtering technique. MIM cells were constructed by sandwiched TiO2 thin films between a pair of electrodes; Ti thin films were employed to form an ohmic bottom contact and NiCr thin films were employed to form Schottky top electrodes obtaining Ti/TiO2/NiCr MIM cells. Schottky barrier height for the TiO2/NiCr junction was determined according to the thermionic emission model by using the Cheung´s functions. SEM and Raman analysis of the TiO2 thin films were carried out to ensure the quality of the films. Current-Voltage (I-V) sweeps obtained at room temperature by the application of dc bias showed a bipolar resistive switching behavior on the cells. Both low resistance state (ON state) and high resistance state (OFF state), of Ti/TiO2/NiCr cells are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 103 and the retention properties of both states are very stable after 105 s with a voltage test of 0.1 V.

Effect of Ar-plasma treatment of ITO layer on resistive memory properties of a Ti/ITO point-contact structure

2019 ◽  
Vol 33 (14n15) ◽  
pp. 1940042
Author(s):  
Chih-Yi Liu ◽  
Wan-We Chih ◽  
Chao-Kai Weng ◽  
Wei-Chen Tien ◽  
Chang-Sin Ye
Keyword(s):  
Plasma Treatment ◽  
Point Contact ◽  
Random Access ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Text Structure ◽  
Forming Process ◽  
Metal Insulator Metal ◽  
Resistance State ◽  
Ar Plasma

A Ti/ITO structure was used as a point-contact resistive random access memory to simplify the procedures for conventional metal/insulator/metal structures. After the forming process, a [Formula: see text] interface was formed to fabricate a [Formula: see text] structure. The [Formula: see text] structure can be reversibly switched between a high-resistance state and a low-resistance state by using dc voltages at different polarities. The resistive switching was determined by the formation and rupture of oxygen-vacancy filaments. However, the high-forming current resulted in circuit design complexity and reliability concerns. An Ar-plasma treatment was adopted to modify the ITO surface. The Ar-plasma treatment lowered the forming current and improved memory reliability. The Ar-treated sample exhibited an endurance of more than 800 cycles through dc operation and a retention time longer than [Formula: see text] at [Formula: see text], making it suitable for nonvolatile memory applications.

Functional Gradient Transparent Conducting Oxide Nanowire Arrays as Monophasic Schottky-Barrier Free Memristors for Bipolar Linear Switching

2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz
Keyword(s):  
Schottky Barrier ◽  
Data Storage ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Electrical Potential ◽  
High Resistance State ◽  
Nanowire Arrays ◽  
Metal Metal ◽  
Resistance State ◽  
Barrier Free

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>

scholarly journals Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device

Metals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1199
Author(s):  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
High Resistance State ◽  
Long Term Potentiation ◽  
Memory Device ◽  
Bipolar Resistive Switching ◽  
Term Potentiation ◽  
Resistance State ◽  
Neuromorphic System

This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

scholarly journals Artificial complementary chromatic acclimation gene expression system in Escherichia coli

2021 ◽  
Vol 20 (1) ◽  
Author(s):  
Dwi Ariyanti ◽  
Kazunori Ikebukuro ◽  
Koji Sode
Keyword(s):  
Gene Expression ◽  
Escherichia Coli ◽  
Light Exposure ◽  
Expression System ◽  
Red Light ◽  
Green Light ◽  
Light Illumination ◽  
Multiple Gene ◽  
Gene Expression System ◽  
Chromatic Acclimation

Abstract Background The development of multiple gene expression systems, especially those based on the physical signals, such as multiple color light irradiations, is challenging. Complementary chromatic acclimation (CCA), a photoreversible process that facilitates the control of cellular expression using light of different wavelengths in cyanobacteria, is one example. In this study, an artificial CCA systems, inspired by type III CCA light-regulated gene expression, was designed by employing a single photosensor system, the CcaS/CcaR green light gene expression system derived from Synechocystis sp. PCC6803, combined with G-box (the regulator recognized by activated CcaR), the cognate cpcG2 promoter, and the constitutively transcribed promoter, the PtrcΔLacO promoter. Results One G-box was inserted upstream of the cpcG2 promoter and a reporter gene, the rfp gene (green light-induced gene expression), and the other G-box was inserted between the PtrcΔLacO promoter and a reporter gene, the bfp gene (red light-induced gene expression). The Escherichia coli transformants with plasmid-encoded genes were evaluated at the transcriptional and translational levels under red or green light illumination. Under green light illumination, the transcription and translation of the rfp gene were observed, whereas the expression of the bfp gene was repressed. Under red light illumination, the transcription and translation of the bfp gene were observed, whereas the expression of the rfp gene was repressed. During the red and green light exposure cycles at every 6 h, BFP expression increased under red light exposure while RFP expression was repressed, and RFP expression increased under green light exposure while BFP expression was repressed. Conclusion An artificial CCA system was developed to realize a multiple gene expression system, which was regulated by two colors, red and green lights, using a single photosensor system, the CcaS/CcaR system derived from Synechocystis sp. PCC6803, in E. coli. The artificial CCA system functioned repeatedly during red and green light exposure cycles. These results demonstrate the potential application of this CCA gene expression system for the production of multiple metabolites in a variety of microorganisms, such as cyanobacteria.

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