Porous Silica Xerogel Processing And Integration For Ulsi Applications

1998 ◽  
Vol 511 ◽  
Author(s):  
Changming Jin ◽  
Scott List ◽  
Eden Zielinski
Keyword(s):  
Dielectric Constant ◽  
Dielectric Material ◽  
Porous Silica ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Silica Xerogel ◽  
Future Technology ◽  
Small Pore ◽  
High Dielectric

ABSTRACTWith a tunable ultra low dielectric constant, porous silica xerogel is an attractive dielectric material for ULSI interconnect applications and is potentially extendable to multiple future technology nodes. Porous silica xerogel films have been processed and integrated into device test structures as ultra low k intermetal dielectrics. A fully automated thin film deposition process is recently developed and gives high throughput and good repeatability. A surface modification technique is used to make the films hydrophobic. The film dielectric constant is measured to be less than 2, depending on porosity. Because of the small pore sizes, the films display high dielectric break down strength. With proper shrinkage control, porous silica xerogel shows excellent gapfill capabilities. Integration of the porous silica xerogel material into CMP planarized double level metal (DLM) test structures with both Al and W plugs in a gapfill scheme is successful. Porous silica xerogel structures provide 14% and 35% total capacitance reduction compared to structures with hydrogen silsesquioxane (HSQ) and high density plasma (HDP) oxide respectively. Reliability and current leakage data of porous silica xerogel are comparable to that of HSQ. Feasibility of integrating porous silica xerogel into Cu damascene structures is also demonstrated. Cu/xerogel damascene structures exhibit improvements in both resistance and capacitance compared with convention Al/Oxide gapfill structures.

Skin–core structured fluorinated MWCNTs: a nanofiller towards a broadband dielectric material with a high dielectric constant and low dielectric loss

2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Epoxy Composite ◽  
Low Dielectric ◽  
High Dielectric

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

scholarly journals Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
Film Deposition ◽  
Low Density ◽  
Scanning Electron Micrographs ◽  
Elastic Recoil ◽  
Plasma Cvd ◽  
Plasma Chemical Vapor Deposition

<div> <p>Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm<sup>3</sup> as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements<b>,</b> varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition.</p> </div> <br>

Study of Porous Silica Based Films as Low-k Dielectric Material and their Interface with Copper Metallization

2002 ◽  
Vol 716 ◽  
Author(s):  
Ilanit Fisher ◽  
Wayne D. Kaplan ◽  
Moshe Eizenberg ◽  
Michael Nault ◽  
Timothy Weidman
Keyword(s):  
Integrated Circuits ◽  
Dielectric Material ◽  
Hydrogen Plasma ◽  
Porous Silica ◽  
Film Deposition ◽  
Copper Metallization ◽  
High Porosity ◽  
Tem Analysis ◽  
Chip Technology ◽  
Low K

AbstractThe success of future gigascale integrated circuits (IC) chip technology depends critically upon the reduction of the interconnects RC delay time. This calls for the development of new low dielectric constant (low-k) insulators, and for work on their integration with lower resistivity copper metallization.A porous silica based film prepared by surfactant templated self-assembly spin-on deposition (SOD) is an attractive candidate as a low-k material. In this research we have studied the structure, chemical composition and bonding of the film and its interface with copper metallization. The decomposition and vaporization of the surfactant in the last step of film deposition resulted in a film with an amorphous structure, as determined by XRD and TEM analysis. Its high porosity (35-58%) was confirmed by XRR and RBS measurements. XPS analysis of the Si2p transition indicated three types of bonding: Si-O, O-Si-C and Si-C. The bonding characteristics were also investigated by FTIR analysis. The effect of a hydrogen plasma post-treatment process on the film topography and bonding was determined by AFM and XPS, respectively. It was found that direct H2 plasma exposure significantly affected the surface roughness of the film and type of chemical bonding. The structure and properties of various PECVD deposited capping layers were also studied, as was the interface between the porous dielectric and Ta, TaxN and Cu (PVD deposited films) after annealing at 200-700°C in vacuum environment for 30 min. At temperatures up to 500°C, no significant diffusion of Cu or Ta into the porous film was detected, as determined by RBS. No copper penetration was detected up to 700°C, according to AES and SIMS analysis. However, at 700°C copper dewetting occurred when it was deposited directly on the porous silica based film.

Spray Pyrolysis Thin Film Deposition Technique for Micro-Sensors and Devices

2020 ◽  
pp. 178-202
Author(s):  
Monoj Kumar Singha ◽  
Vineet Rojwal
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Deposition Technique ◽  
Uv Photodetector ◽  
Spray Process ◽  
Spray Pyrolysis Deposition ◽  
Deposition Techniques

Thin film is used for sensing and electronic devices applications. Various techniques are used for thin film deposition. This chapter presents the Spray pyrolysis deposition technique used for the growth of thin films sensing and device material. Spray pyrolysis is an inexpensive method to grow good crystalline thin film compared to other thin film deposition techniques. The chapter gives an overview of the spray process used for thin film deposition. Basic setup for this process is explained. Parameters affecting the deposition process is explained, as are the various spray methods. Finally, some examples of spray pyrolysis in different applications like a gas sensor, UV photodetector, solar cell, photocatalysis, and supercapacitor are discussed.

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

Ferroeleciric Thin Films Intended for Electronic Device Applications

1993 ◽  
Vol 310 ◽  
Author(s):  
A. Patel ◽  
E.A. Logan ◽  
R. Nicklin ◽  
N.B. Hasdell ◽  
R.W. Whatmore ◽  
...  
Keyword(s):  
Thin Films ◽  
Flip Chip ◽  
Electronic Device ◽  
Dielectric Material ◽  
Sol Gel ◽  
Deposition Process ◽  
Dielectric Constants ◽  
Excess Lead ◽  
Starting Solutions ◽  
High Dielectric

AbstractThe need for integrated ferroelectrics as charge storage capacitors has increased dramatically not only for use in radiation hardened and commercial non-volatile memories, but also as possible high dielectric material suitable for capacitor applications. These properties combined with a thin film format, offer the capability of forming very compact capacitor structures suitable for MCM applications through Flip-Chip Bonding, or even integrated directly onto MMIC's. In this paper, the material PbZrxTi1-xO3, where x=l, 0.53, and 0.60 has been assessed. Thin films were produced using a sol-gel technique onto metallised thermally oxidised silicon. The effects on film microstructure and crystallinity with variation in the deposition process will be described. The best films were obtained by incorporating excess lead in the starting solutions, and also by the addition of acetylacetone which was used as a solution modifier. It will be demonstrated that fully perovskite films can be readily obtained at temperatures as low as 450°C. The films were normally 0.3-0.44μm thick with grain sizes of the order of 0.2μm. These films exhibited dielectric constants and loss in the range 170-800 and 1-3% respectively. Measurements upto 3MHz, indicated useful performance with low dispersion. The measured Pr and Ec were in the range 16-22μC/cm2, and 60-120kV/cm respectively.

Duplex Hard Coatings with Aditional Ion Implantation

2012 ◽  
Vol 157-158 ◽  
pp. 1320-1323
Author(s):  
Branko Škorić ◽  
D. Kakaš ◽  
G. Favato ◽  
A. Miletić ◽  
M. Arsenovic
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Scratch Test ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Hard Coatings ◽  
X Ray ◽  
Atomic Force ◽  
Tin Thin Films

In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N2+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films.. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).

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