Imaging Performance of aSIL Microscopy on Subsurface Imaging of SOI Chips

2014 ◽  
Author(s):  
Aydan Uyar ◽  
Abdulkadir Yurt ◽  
T. Berkin Cilingiroglu ◽  
Bennett B. Goldberg ◽  
M. Selim Ünlü
Keyword(s):  
Integrated Circuits ◽  
Collection Efficiency ◽  
Numerical Aperture ◽  
Spot Size ◽  
Silicon On Insulator ◽  
Subsurface Imaging ◽  
Bulk Silicon ◽  
Fully Depleted ◽  
Optical Inspection ◽  
Imaging Performance

Abstract The demand for high resolution has raised interest for the use of aplanatic solid immersion lenses (aSIL) for backside optical inspection and failure analysis of integrated circuits due to its high numerical aperture capability. This work investigates the performance of aSIL microscopy in imaging of fully depleted silicon on insulator (SOI) chips and explores the effect of the buried oxide (BOx) thickness on the spatial resolution and photon collection efficiency. Three different cases, namely, bulk silicon, SOI with an ultrathin BOx of 10 nm, and SOI with a standard BOx thickness of 145 nm, are studied. It is observed that there is a 15% drop in the collection efficiency for ultra-thin BOx compared to bulk silicon and up to 80% decrease in the collection efficiency and 30% increase in the spot-size for standard Box.

scholarly journals Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits

2019 ◽  
Vol 2019 ◽  
pp. 1-9
Author(s):  
Zhaopeng Wei ◽  
Gilles Jacquemod ◽  
Yves Leduc ◽  
Emeric de Foucauld ◽  
Jerome Prouvee ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Analog Circuits ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Passive Component ◽  
Short Channel ◽  
Short Channel Effect ◽  
Back Gate ◽  
Fully Depleted ◽  
Channel Effect

Analog integrated circuits never follow the Moore’s Law. This is particularly right for passive component. Due to the Short Channel Effect, we have to implement longer transistor, especially for analog cell. In this paper, we propose a new topology using some advantages of the FDSOI (Fully Depleted Silicon on Insulator) technology in order to reduce the size of analog cells. First, a current mirror was chosen to illustrate and validate a new design. Measured currents, with 35nm transistor length, have validated our new cross-coupled back-gate topology. Then, a VCRO (Voltage Controlled Ring Oscillator) based on complementary inverter is also used to remove passive components reducing the size of the circuit.

scholarly journals A New CMOS OP-AMP Design with an Improved Adaptive Biasing Circuitry

2021 ◽  
Vol 19 ◽  
Author(s):  
Hatim Ameziane ◽  
Kamal Zared ◽  
Hassan Qjidaa
Keyword(s):  
Integrated Circuits ◽  
Power Dissipation ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Weak Inversion ◽  
Fully Depleted ◽  
Op Amp ◽  
Low Power Dissipation ◽  
Adaptive Biasing ◽  
A New Technique

This paper sets out a new technique for designing an operational amplifier (OP-AMP) using tanner EDA 1um FDSOI CMOS Technology. Fully Depleted Silicon on Insulator used for building integrated circuits to support the temperature changes, the proposed OP-AMP operates at 3.75V power supply and 70uA bias current using the proposed Adaptive Biasing Circuitry (ABC), which its devices operate at the weak inversion to allow low power dissipation of 0.62mW. The 0.064us settling time and 37.016V/μs slew rate parameters improved by the ABC technique, reducing the power dissipation by operating the ABC devices in weak inversion. The phase margin is more than 100 degrees for the DC gain of 13.97dB, which is a reasonable margin when temperature range increases.

Effect of annealing ambient on the precipitation processes in oxygen-implanted silicon on-insulator material

1990 ◽  
Vol 48 (4) ◽  
pp. 644-645
Author(s):  
P. Roitman ◽  
D.S. Simons ◽  
Supapan Visitserngtrakul ◽  
C.O. Jung ◽  
S J. Krause
Keyword(s):  
Integrated Circuits ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Bulk Silicon ◽  
Implantation Damage ◽  
Thermal Oxide ◽  
High Temperature Anneal ◽  
Gas Atmosphere ◽  
Oxide Precipitate

In the last decade, oxygen implanted silicon-on-insulator material (SIMOX: Separation by IMplantation of OXygen) has been extensively studied, due to its potential advantages of increased speed and radiation hardness in integrated circuits. SIMOX material requires two processing steps: first, implantation of a high dose of oxygen to form a buried oxide layer below a thin, top silicon layer; second, a high temperature anneal in an inert gas atmosphere to remove implantation damage and oxide precipitates. Most earlier studies investigated the effect of annealing temperature and time, but did not consider the effect of gas ambient. The effect of nitrogen and argon on the oxide-precipitate formation in bulk silicon has been established. Raider et al. found that in annealing of bulk silicon, nitrogen can diffuse to an oxide-silicon interface and chemically react with silicon. The nitrogen-containing layer acts as a barrier to further oxidation. Consequently, nitrogen influences the growth kinetics of the thermal oxide while annealing in an argon ambient does not. This should apply to SIMOX as well. We have, therefore, investigated the effect of nitrogen and argon ambient on the oxide-precipitate removal during annealing of SIMOX material.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Microspectroscopy Using a Solid Immersion Lens

2001 ◽  
Vol 7 (S2) ◽  
pp. 148-149
Author(s):  
C.D. Poweleit ◽  
J Menéndez
Keyword(s):  
Spatial Resolution ◽  
Focal Plane ◽  
Numerical Aperture ◽  
Normal Incidence ◽  
Spot Size ◽  
Index Of Refraction ◽  
Objective Lens ◽  
Improvement Factor ◽  
Oil Immersion ◽  
Long Time

Oil immersion lenses have been used in optical microscopy for a long time. The light’s wavelength is decreased by the oil’s index of refraction n and this reduces the minimum spot size. Additionally, the oil medium allows a larger collection angle, thereby increasing the numerical aperture. The SIL is based on the same principle, but offers more flexibility because the higher index material is solid. in particular, SILs can be deployed in cryogenic environments. Using a hemispherical glass the spatial resolution is improved by a factor n with respect to the resolution obtained with the microscope’s objective lens alone. The improvement factor is equal to n2 for truncated spheres.As shown in Fig. 1, the hemisphere SIL is in contact with the sample and does not affect the position of the focal plane. The focused rays from the objective strike the lens at normal incidence, so that no refraction takes place.

An Overview of 300 mm SOI Starting Wafer Quality and Its Yield Detractors

2005 ◽  
Author(s):  
Pei Y. Tsai ◽  
Junedong Lee ◽  
Paul Ronsheim ◽  
Lindsay Burns ◽  
Richard Murphy ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Device Fabrication ◽  
Sampling Plan ◽  
Silicon On Insulator ◽  
Manufacturing Processes ◽  
Circuit Performance ◽  
Characterization Techniques ◽  
Wafer Manufacturing

Abstract A stringent sampling plan is developed to monitor and improve the quality of 300mm SOI (silicon on insulator) starting wafers procured from the suppliers. The ultimate goal is to obtain the defect free wafers for device fabrication and increase yield and circuit performance of the semiconductor integrated circuits. This paper presents various characterization techniques for QC monitor and examples of the typical defects attributed to wafer manufacturing processes.

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