Diode Based Trimode Multi-Threshold CMOS Technique for Ground Bounce Noise Reduction in Static CMOS Adders

2012 ◽  
Vol 548 ◽  
pp. 885-889 ◽  
Author(s):  
Manisha Pattanaik ◽  
Balwinder Raj ◽  
Shashikant Sharma ◽  
Anjan Kumar
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Performance ◽  
Room Temperature ◽  
Supply Voltage ◽  
Full Adder ◽  
Mode Analysis ◽  
Mode Transition ◽  
Additional Mode ◽  
Ground Bounce

In this paper a high performance diode based trimode Multi-Threshold CMOS (MTCMOS) technique is introduced which minimizes standby leakage current and provides a better way to control the ground bounce noise during sleep to active mode transition using one additional mode i.e. hold mode. Analysis of trimode MTCMOS technique using low power 16-bit full adder has been done for reduction of standby leakage current and ground bounce noise. Further, to evaluate the effectiveness of diode based trimode Multi-Threshold CMOS technique, simulation has been done on low power 16-bit full adder circuit with BPTM 90nm technology at room temperature with supply voltage of 1 V. Diode based trimode Multi-Threshold CMOS technique reduces ground bounce noise by 89.36% and standby leakage current by 19.24% as compared to the standard trimode MTCMOS technique.

MODELING AND ANALYSIS OF LOW POWER 10 T FULL ADDER WITH REDUCED GROUND BOUNCE NOISE

2014 ◽  
Vol 23 (01) ◽  
pp. 1450005 ◽  
Author(s):  
RAGHVENDRA SINGH ◽  
SHYAM AKASHE
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Performance ◽  
Digital Circuits ◽  
Arithmetic Operation ◽  
Full Adder ◽  
Leakage Power ◽  
Modeling And Analysis ◽  
Complex Arithmetic ◽  
Ground Bounce

In the design of high performance complex arithmetic logic circuits, ground bounce noise, leakage current and leakage power are important and challenging issues in nanometer down scaling. In this paper, the low power and reduced ground bounce noise using 10 transistor full adder has been proposed. Full adder is the most important basic building of digital circuits employing arithmetic operation. Adder circuit is widely used in many digital circuits not only for arithmetic operation but also for address generation in processors and microcontrollers. It is therefore necessary to make these systems more efficient so that they consume less power. Here, we use stacking power gating technique to evaluate leakage current, power and ground bounce noise. This paper describes reduction of leakage power and ground bounce noise from the 10 T full adder circuits to make it more reliable to be used to have low power and stable and errorless output. All the simulation in this paper has been carried out using cadence virtuoso at 45 nm technology at various voltages and various temperatures. By using this technique the leakage current reduction can be improved by 80% and leakage power to 70% as compared to conventional 10 T full adder. Ground bounce noise can be reduced to 60% as compared to the base full adder.

scholarly journals Performance Analysis of Modified Drain Gating Techniques for Low Power and High Speed Arithmetic Circuits

VLSI Design ◽  
2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Shikha Panwar ◽  
Mayuresh Piske ◽  
Aatreya Vivek Madgula
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Room Temperature ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Cmos Circuits ◽  
Output Node ◽  
Critical Sections

This paper presents several high performance and low power techniques for CMOS circuits. In these design methodologies, drain gating technique and its variations are modified by adding an additional NMOS sleep transistor at the output node which helps in faster discharge and thereby providing higher speed. In order to achieve high performance, the proposed design techniques trade power for performance in the delay critical sections of the circuit. Intensive simulations are performed using Cadence Virtuoso in a 45 nm standard CMOS technology at room temperature with supply voltage of 1.2 V. Comparative analysis of the present circuits with standard CMOS circuits shows smaller propagation delay and lesser power consumption.

scholarly journals Forced stack sleep transistor (FORTRAN): A new leakage current reduction approach in CMOS based circuit designing

2021 ◽  
Vol 34 (2) ◽  
pp. 259-280
Author(s):  
Sankit Kassa ◽  
Neeraj Misra ◽  
Rajendra Nagaria
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Power Efficiency ◽  
High Performance ◽  
Low Voltage ◽  
Full Adder ◽  
Leakage Power ◽  
Modes Of Operation ◽  
Power Circuit ◽  
Current Reduction

Reduction in leakage current has become a significant concern in nanotechnology-based low-power, low-voltage, and high-performance VLSI applications. This research article discusses a new low-power circuit design the approach of FORTRAN (FORced stack sleep TRANsistor), which decreases the leakage power efficiency in the CMOS-based circuit outline in VLSI domain. FORTRAN approach reduces leakage current in both active as well as standby modes of operation. Furthermore, it is not time intensive when the circuit goes from active mode to standby mode and vice-versa. To validate the proposed design approach, experiments are conducted in the Tanner EDA tool of mentor graphics bundle on projected circuit designs for the full adder, a chain of 4-inverters, and 4- bit multiplier designs utilizing 180nm, 130nm, and 90nm TSMC technology node. The outcomes obtained show the result of a 95-98% vital reduction in leakage power as well as a 15-20% reduction in dynamic power with a minor increase in delay. The result outcomes are compared for accuracy with the notable design approaches that are accessible for both active and standby modes of operation.

Design of Low Power Dual Dynamic Node Flip-Flop Using Sleep Transistor with NMOS

2015 ◽  
Vol 4 (3) ◽  
pp. 178
Author(s):  
Ajeesh Kumar ◽  
N. Saraswathi
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Performance ◽  
Supply Voltage ◽  
Cmos Circuits ◽  
Flip Flop ◽  
Sleep Transistors ◽  
Power Delay Product ◽  
Charge Mode ◽  
Logic Level

This paper introduces a Low Power Dual DynamicNode FlipFlop(DDFF) using Sleep Transistor with NMOS. Theproposed design retains the logic level till the end of evaluation and pre-charge mode. The low power DDFF architecturethat combines the advantages of dynamic and static CMOSstructures. The Sleep Transistors approach are used for leakagepower reduction. It reduces leakage current in ideal mode.The performance of the proposed flip flop was compared withthe conventional dual dynamic node flip flop (DDFF) in 90nmCMOS technology with 1.2v supply voltage at room temperatures.Also, conventional DDFF and DDFF using Sleep Transistor withNMOS are compared with other complicated designs and realizesby a 4-bit Johnson up and down counter. The performanceimprovements indicates that the proposed designs are suited formodern high-performance CMOS circuits where leakage powerand power delay product overhead are of major concern

Analytical Study Of Full Adder Circuit Using Modified Glitch Free Cascadable Adiabatic Logic

2018 ◽  
Vol 3 (2) ◽  
Author(s):  
Neha Raghav ◽  
◽  
Malti Bansal
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
High Performance ◽  
Analytical Study ◽  
Supply Voltage ◽  
Full Adder ◽  
Vlsi Circuits ◽  
Low Power Consumption ◽  
Adiabatic Logic

Nowadays, power dissipation is among the most dominant concerns in designing a VLSI circuits. Endless improvement in technology has points to an increased requirement for devices which have the basic characteristic of low power consumption. Hence power has turn into a demanding design parameter in low power and high-performance applications. The Adiabatic logic technique is becoming a solution to the dilemma of power dissipation. Adders with huge power consumption affect the overall efficiency of the system. Hence, in this paper, the proposed application of full adder circuit is shown using the Modified Glitch Free Cascadable Adiabatic Logic. The circuit is compared with the conventional CMOS Logic and the power dissipation analysis is simulated with supply voltage = 0.9 V, 1.2 V and 1.8 V to analyze the pattern followed with supply variation at different temperature range. Similarly, the calculation of delay is performed for temperature values of 27˚C, 55˚C and 120˚C at 90nm technology.

Performance Analysis of Various Multipliers Using 8T-full Adder with 180nm Technology

2020 ◽  
Vol 13 (6) ◽  
pp. 864-870
Author(s):  
Sai Venkatramana Prasada G.S ◽  
G. Seshikala ◽  
S. Niranjana
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Fundamental Operation ◽  
Wallace Tree ◽  
Power Delay Product ◽  
The Comparative Study ◽  
Wallace Tree Multiplier

Background: This paper presents the comparative study of power dissipation, delay and power delay product (PDP) of different full adders and multiplier designs. Methods: Full adder is the fundamental operation for any processors, DSP architectures and VLSI systems. Here ten different full adder structures were analyzed for their best performance using a Mentor Graphics tool with 180nm technology. Results: From the analysis result high performance full adder is extracted for further higher level designs. 8T full adder exhibits high speed, low power delay and low power delay product and hence it is considered to construct four different multiplier designs, such as Array multiplier, Baugh Wooley multiplier, Braun multiplier and Wallace Tree multiplier. These different structures of multipliers were designed using 8T full adder and simulated using Mentor Graphics tool in a constant W/L aspect ratio. Conclusion: From the analysis, it is concluded that Wallace Tree multiplier is the high speed multiplier but dissipates comparatively high power. Baugh Wooley multiplier dissipates less power but exhibits more time delay and low PDP.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

scholarly journals Design of high performance, low power sub thresholds ram using source coupled logic for implantable applications.

2018 ◽  
Vol 7 (2.12) ◽  
pp. 205
Author(s):  
T Vasudeva Reddy ◽  
Dr B.K. Madhavi
Keyword(s):  
Low Power ◽  
High Performance ◽  
Supply Voltage ◽  
Process Variations ◽  
Primary Objective ◽  
Total Power ◽  
Threshold Region ◽  
Major Power ◽  
Low Power Circuits ◽  
Power Circuits

Low power circuits functioning in sub threshold were proposed in earlier seventies. Recently, growing with the need of low power consumption, the low power circuits have became more attractive. However, the act of sub threshold design logics has become sensitive to the supply voltage & process variations like temperature and so on. In sub threshold region of operations the supply voltage (Vgs) is less than the threshold (Vth).This leads to less power dissipation in over all circuit, but drastically increment in propagation delay. The major intention of the paper is to offer new low power & less delay digital circuits. SRAM is the major power drawing element and dissipation is about 40% in total power. The primary objective is to design of sub threshold SRAM design, Functionality and performance is estimated from the power and delay.The second objective is to offer novel Source coupled logic based SRAM (ST-SC SRA) M & Operating these design under sub threshold operating region. Performance is analyzed through power and delay. Finally comparing the traditional sub threshold SRAM with source coupled based SRAM in power and delay on par with the performance. Discussing some of the applications, where there is a requirement of less power and delay. 

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