Design of hardened flip-flop using Schmitt trigger-based SEM latch in CNTFET technology

Circuit World ◽  
2020 ◽  
Vol 47 (1) ◽  
pp. 51-59
Author(s):  
Divya Madhuri Badugu ◽  
Sunithamani S. ◽  
Javid Basha Shaik ◽  
Ramesh Kumar Vobulapuram
Keyword(s):  
Integrated Circuit ◽  
Field Effect Transistors ◽  
Schmitt Trigger ◽  
Soft Error ◽  
The Novel ◽  
Flip Flop ◽  
Content Type ◽  
Performance Improvements ◽  
Power Delay Product ◽  
Error Masking

Purpose The purpose of this paper is to design novel hardened flip-flop using carbon nanotube field effect transistors (CNTFETs). Design/methodology/approach To design the proposed flip-flop, the Schmitt trigger-based soft error masking and unhardened latches have been used. In the proposed design, the novel mechanism, i.e. hysteresis property is used to enhance the hardness of the single event upset. Findings To obtain the simulation results, all the proposed circuits are extensively simulated in Hewlett simulation program with integrated circuit emphasis software. Moreover, the results of the proposed latches are compared to the conventional latches to show performance improvements. It is noted that the proposed latch shows the performance improvements up to 25.8%, 51.2% and 17.8%, respectively, in terms of power consumption, area and power delay product compared to the conventional latches. Additionally, it is observed that the simulation result of the proposed flip-flop confirmed the correctness with its respective functions. Originality/value The novel hardened flip-flop utilizing ST based SEM latch is presented. This flip-flop is significantly improves the performance and reliability compared to the existing flip-flops.

Design of ternary subtractor using multiplexers

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Tulasi Naga Jyothi Kolanti ◽  
Vasundhara Patel K.S.
Keyword(s):  
Field Effect Transistors ◽  
Process Variations ◽  
Propagation Delay ◽  
Channel Length ◽  
Binary Decision ◽  
Content Type ◽  
The Stability ◽  
Power Delay Product ◽  
Ternary Decision Diagram ◽  
Logic Functions

Purpose The purpose of this paper is to design multiplexers (MUXs) based on ternary half subtractor and full subtractor using carbon nanotube field-effect transistors. Design/methodology/approach Conventionally, the binary logic functions are developed by using the binary decision diagram (BDD) systems. Each node in BDD is replaced by 2:1 MUX to implement the digital circuits. Similarly, in the ternary decision diagram, each node has to be replaced by 3:1 MUX. In this paper, ternary transformed BDD is used to design the ternary subtractors using 2:1 MUXs. Findings The performance of the proposed ternary half subtractor and full subtractor using the 2:1 MUX are compared with the 3:1 MUX-based ternary circuits. It has been observed that the delay, power and power delay product values are reduced, respectively, by 67.6%, 84.3%, 94.9% for half subtractor and 67.7%, 70.1%, 90.3% for full subtractor. From the Monte Carlo simulations, it is observed that the propagation delay and power dissipation of the proposed subtractors are increased by increasing the channel length due to process variations. The stability test is also performed and observed that the stability increases as the channel length and diameter are increased. Originality/value The proposed half subtractor and full subtractor show better performance over the existing subtractors.

Area Efficient Carry Select Adder Using Negative Edge Triggered D-Flipflop

2014 ◽  
Vol 573 ◽  
pp. 187-193 ◽  
Author(s):  
Anitha Ponnusamy ◽  
Palaniappan Ramanathan
Keyword(s):  
Integrated Circuit ◽  
Power Dissipation ◽  
High Speed ◽  
Total Power ◽  
Single Chip ◽  
Flip Flop ◽  
Design And Optimization ◽  
Negative Edge ◽  
Carry Select Adder ◽  
Power Delay Product

The recent increase in popularity of portable systems and rapid growth of packaging density in VLSI circuit’s has enable designers to design complex functional units on a single chip. Power, area and speed plays a major role in the design and optimization of an integrated circuit. Carry select adder is high speed final stage adder widely used in many data processing units. In this work, conventional D-flip flop is replaced by a new design using negative edge triggered D-flip flop. The proposed CSA is implemented in a faster partitioned Dadda multiplier and simulated by using MICROWIND tool. The results reveal that for 16 bit CSA improvement of power delay product (PDP) of the proposed design using negative edge triggered D flip flop is 78% & 18% when compared to CSA with BEC and CSA with conventional D flip flop. When CSA implemented in a partitioned Dadda multiplier it results in performance improvement of 74 % with little increase in total power dissipation.

Improved hetero-junction TFET-based Schmitt trigger designs for ultra-low-voltage VLSI applications

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Abhay Sanjay Vidhyadharan ◽  
Sanjay Vidhyadharan
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Low Voltage ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Schmitt Trigger ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Requirement ◽  
Content Type

Purpose Tunnel field effect transistors (TFETs) have significantly steeper sub-threshold slope (24–30 mv/decade), as compared with the conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), which have a sub-threshold slope of 60 mv/decade at room temperature. The steep sub-threshold slope of TFETs enables a much faster switching, making TFETs a better option than MOSFETs for low-voltage VLSI applications. The purpose of this paper is to present a novel hetero-junction TFET-based Schmitt triggers, which outperform the conventional complementary metal oxide semiconductor (CMOS) Schmitt triggers at low power supply voltage levels. Design/methodology/approach The conventional Schmitt trigger has been implemented with both MOSFETs and HTFETs for operation at a low-voltage level of 0.4 V and a target hysteresis width of 100 mV. Simulation results have indicated that the HTFET-based Schmitt trigger not only has significantly lower delays but also consumes lesser power as compared to the CMOS-based Schmitt trigger. The limitations of the conventional Schmitt trigger design have been analysed, and improved CMOS and CMOS–HTFET hybrid Schmitt trigger designs have been presented. Findings The conventional Schmitt trigger implemented with HTFETs has 99.9% lower propagation delay (29ps) and 41.2% lesser power requirement (4.7 nW) than the analogous CMOS Schmitt trigger, which has a delay of 36 ns and consumes 8 nW of power. An improved Schmitt trigger design has been proposed which has a transistor count of only six as compared to the eight transistors required in the conventional design. The proposed improved Schmitt trigger design, when implemented with only CMOS devices enable a reduction of power delay product (PDP) by 98.4% with respect to the CMOS conventional Schmitt trigger design. The proposed CMOS–HTFET hybrid Schmitt trigger further helps in decreasing the delay of the improved CMOS-only Schmitt trigger by 70% and PDP by 21%. Originality/value The unique advantage of very steep sub-threshold slope of HTFETs has been used to improve the performance of the conventional Schmitt trigger circuit. Novel CMOS-only and CMOS–HTFET hybrid improved Schmitt trigger designs have been proposed which requires lesser number of transistors (saving 70% chip area) for implementation and has significantly lower delays and power requirement than the conventional designs.

scholarly journals Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

2019 ◽  
Vol 36 (2) ◽  
pp. 73-82
Author(s):  
Nurul Aida Farhana Othman ◽  
Sharidya Rahman ◽  
Sharifah Fatmadiana Wan Muhamad Hatta ◽  
Norhayati Soin ◽  
Brahim Benbakhti ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Integrated Circuit ◽  
Aluminum Gallium Nitride ◽  
Field Effect Transistors ◽  
Material Selection ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Content Type ◽  
Physical Dimensions

Purpose To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. Design/methodology/approach Varying material and physical considerations, specifically investigating the effects of graded barriers, spacer interlayer, material selection for the channel, as well as study of the effects in the physical dimensions of the HEMT, have been extensively carried out. Findings Critical figure-of-merits, specifically the DC characteristics, 2DEG concentrations and mobility of the heterostructure device, have been evaluated. Significant observations include enhancement of maximum current density by 63 per cent, whereas the electron concentration was found to propagate by 1,020 cm−3 in the channel. Practical implications This work aims to provide tactical optimization to traditional heterostructure field effect transistors, rendering its application as power amplifiers, Monolithic Microwave Integrated Circuit (MMICs) and Radar, which requires low noise performance and very high radio frequency design operations. Originality/value Analysis in covering the breadth and complexity of heterostructure devices has been carefully executed through extensive TCAD modeling, and the end structure obtained has been optimized to provide best performance.

scholarly journals Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1572
Author(s):  
Ehab A. Hamed ◽  
Inhee Lee
Keyword(s):  
Soft Error ◽  
Error Tolerance ◽  
Cmos Process ◽  
Flip Flop ◽  
Single Event Upsets ◽  
Area Overhead ◽  
Fair Comparison ◽  
Reference Design ◽  
Radiation Hardened ◽  
Radiation Hardened By Design

In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design.

BTI and Soft-Error Tolerant Voltage Bootstrapped Schmitt Trigger Circuit

2021 ◽  
Vol 21 (1) ◽  
pp. 153-155
Author(s):  
Neha Gupta ◽  
Ambika Prasad Shah ◽  
Santosh Kumar Vishvakarma
Keyword(s):  
Schmitt Trigger ◽  
Soft Error ◽  
Trigger Circuit ◽  
Schmitt Trigger Circuit

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

Responses of Arab teachers of Hebrew in Israel to an Israeli novel on Jewish-Arab relations

2019 ◽  
Vol 35 (2) ◽  
pp. 1-17
Author(s):  
Shai Rudin
Keyword(s):  
Boarding School ◽  
Educational Systems ◽  
The Novel ◽  
Content Type ◽  
Reading Experience ◽  
Political Views ◽  
Arab Students ◽  
Complex Integration ◽  
Education College ◽  
Arab Sector

Purpose This study aims to examine the responses and perceptions of Israeli Arab teachers toward multicultural and educational issues concerning Jewish–Arab relations. Design/methodology/approach This study is a qualitative research. The study included 44 novice Arab teachers, who teach Hebrew in the Arab sector and are currently studying toward their masters’ degree at a teacher education college in northern Israel. The teachers were asked to read the novel Nadia by Galila Ron Feder–Amit. Published in 1985, the novel describes the complex integration of Nadia, an Arab village girl, into a Jewish boarding school, and it is narrated in first person. After having read the novel, the teachers were requested to answer the writing task, which addressed the character of the protagonist, the issue of teaching the novel in the Jewish and Arabic educational systems and the anticipated responses of Jewish and Arab students to the novel. Findings Phenomenological analysis of the teachers’ responses found that the reading experience was complex and resulted in a variety of responses toward the protagonist. Some were based on identification and appreciation, while others on criticism and judgment of the heroine’s restraint vis-a-vis the racism that she was experiencing. However, most of the teachers demonstrated moral courage and thought that the novel should be taught, as they viewed it as a bridge leading to understanding between the two nations. The teachers anticipated conflicting responses of Jewish and Arab students to the novel, according to the students’ political views and values. Practical implications These findings indicate that the educational system should include political texts relating to the Jewish–Arab schism, especially texts that voice the Palestinian narrative. This view differs from the current situation in both sectors, whereby the tendency is to avoid political texts while ignoring the Palestinian narrative. Originality/value The study shows that the reading experience of a political novel affords various and often contrasting responses with the teachers facing the didactic challenges. The teachers who participated in the study anticipated complexity of the reading and teaching process, yet were not deterred by it, particularly in view of the novel’s messages – striving to understand the “other” and to bridge a discourse between the nations.

scholarly journals Novel Tandem Biotransformation Process for the Biosynthesis of a Novel Compound, 4-(2,3,5,6-Tetramethylpyrazine-1)-4′-Demethylepipodophyllotoxin

2011 ◽  
Vol 77 (9) ◽  
pp. 3023-3034 ◽  
Author(s):  
Ya-Jie Tang ◽  
Wei Zhao ◽  
Hong-Mei Li
Keyword(s):  
Cell Line ◽  
Alternaria Alternata ◽  
Water Solubility ◽  
Tumor Cell Line ◽  
Gibberella Fujikuroi ◽  
Hydroxyl Group ◽  
Epithelial Cell Line ◽  
The Novel ◽  
Content Type ◽  
Biotransformation Process

ABSTRACTAccording to the structure of podophyllotoxin and its structure-function relationship, a novel tandem biotransformation process was developed for the directional modification of the podophyllotoxin structure to directionally synthesize a novel compound, 4-(2,3,5,6-tetramethylpyrazine-1)-4′-demethylepipodophyllotoxin (4-TMP-DMEP). In this novel tandem biotransformation process, the starting substrate of podophyllotoxin was biotransformed into 4′-demethylepipodophyllotoxin (product 1) with the demethylation of the methoxyl group at the 4′ position byGibberella fujikuroiSH-f13, which was screened out from Shennongjia prime forest humus soil (Hubei, China). 4′-Demethylepipodophyllotoxin (product 1) was then biotransformed into 4′-demethylpodophyllotoxone (product 2) with the oxidation of the hydroxyl group at the 4 position byAlternaria alternataS-f6, which was screened out from the gatheredDysosma versipellisplants in the Wuhan Botanical Garden, Chinese Academy of Sciences. Finally, 4′-demethylpodophyllotoxone (product 2) and ligustrazine were linked with a transamination reaction to synthesize the target product 4-TMP-DMEP (product 3) byAlternaria alternataS-f6. Compared with podophyllotoxin (i.e., a 50% effective concentration [EC50] of 529 μM), the EC50of 4-TMP-DMEP against the tumor cell line BGC-823 (i.e., 0.11 μM) was significantly reduced by 5,199 times. Simultaneously, the EC50of 4-TMP-DMEP against the normal human proximal tubular epithelial cell line HK-2 (i.e., 0.40 μM) was 66 times higher than that of podophyllotoxin (i.e., 0.006 μM). Furthermore, compared with podophyllotoxin (i.e., logP= 0.34), the water solubility of 4-TMP-DMEP (i.e., logP= 0.66) was significantly enhanced by 94%. For the first time, the novel compound 4-TMP-DMEP with superior antitumor activity was directionally synthesized from podophyllotoxin by the novel tandem biotransformation process developed in this work.

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