scholarly journals DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

2015 ◽  
Vol 2015 ◽  
pp. 1-7
Author(s):  
Xiangming Xu ◽  
Pengliang Ci ◽  
Xiaoyu Tang ◽  
Jing Shi ◽  
Zhengliang Zhou ◽  
...  
Keyword(s):  
Dopant Concentration ◽  
Measurement Data ◽  
Drift Region ◽  
Junction Depth ◽  
Obvious Effect ◽  
Field Plate ◽  
Dc Characteristics ◽  
Simulation Results ◽  
Tcad Simulation ◽  
Reduced Surface

An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on the DC characteristics was analyzed by employing the Taurus TCAD device simulator. A high BV (breakdown voltage) can be achieved while keeping a lowRDSON(on-resistance). The simulation results show that the N-drift region dopant concentration has an obvious effect on the BV andRDSONand the junction depth affected these values less. There is an optimized length for the second field plate for a given dopant concentration of the N-drift region. Both factors should be optimized together to determine the best DC characteristics. Meanwhile, the effect of the first field plate on the BV andRDSONcan be ignored. According to the simulation results, 50 V RF LDMOS with an optimized RESURF structure of a double G-shield was fabricated using 0.35 µm technologies. The measurement data show the same trend as the TCAD simulation, where a BV of 118 V andRDSONof 26 ohm·mm were achieved.

Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits

2019 ◽  
Vol 963 ◽  
pp. 629-632
Author(s):  
Julietta Weisse ◽  
Heinz Mitlehner ◽  
Lothar Frey ◽  
Tobias Erlbacher
Keyword(s):  
Integrated Circuits ◽  
Charge Compensation ◽  
Drift Region ◽  
Cmos Process ◽  
Field Plate ◽  
Blocking Voltage ◽  
P Type ◽  
Fabrication Parameters ◽  
Channel Region ◽  
Reduced Surface

In this work, a lateral 4H-SiC n-LDMOS transistor, based on the principle of a reduced surface field due to charge compensation, is investigated by numerical simulations, in order to find adequate fabrication parameters for a lightly doped p-type epitaxy in combination with a higher doped channel region. The purpose of this work is the integration into an existing technology for a 10 V 4H-SiC-CMOS process. The simulations predict in a blocking voltage of 1.3 kV in combination with an On-resistance of 17 mΩcm2 for a device with a RESURF structure with a total implanted Al concentration of 6∙1016 cm-3 and a depth of 1 μm, a field plate of 5 μm and a drift region of 20 μm. The threshold voltage varies from 5 V to 10 V, depending on the thickness of the gate oxide (50 nm to 100 nm).

scholarly journals Modeling of German Low Voltage Cables with Ground Return Path

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1265 ◽  
Author(s):  
Johanna Geis-Schroer ◽  
Sebastian Hubschneider ◽  
Lukas Held ◽  
Frederik Gielnik ◽  
Michael Armbruster ◽  
...  
Keyword(s):  
Low Voltage ◽  
Measurement Data ◽  
Analytical Calculation ◽  
Laboratory Measurement ◽  
Model Parameters ◽  
Calculation Methods ◽  
Modeling Approach ◽  
Measurement Results ◽  
Simulation Results ◽  
Return Path

In this contribution, measurement data of phase, neutral, and ground currents from real low voltage (LV) feeders in Germany is presented and analyzed. The data obtained is used to review and evaluate common modeling approaches for LV systems. An alternative modeling approach for detailed cable and ground modeling, which allows for the consideration of typical German LV earthing conditions and asymmetrical cable design, is proposed. Further, analytical calculation methods for model parameters are described and compared to laboratory measurement results of real LV cables. The models are then evaluated in terms of parameter sensitivity and parameter relevance, focusing on the influence of conventionally performed simplifications, such as neglecting house junction cables, shunt admittances, or temperature dependencies. By comparing measurement data from a real LV feeder to simulation results, the proposed modeling approach is validated.

scholarly journals Experiment and simulation about the effect of wear-ring abrasion on the performance of a marine centrifugal pump

2021 ◽  
Vol 13 (2) ◽  
pp. 168781402199811
Author(s):  
Wu Xianfang ◽  
Du Xinlai ◽  
Tan Minggao ◽  
Liu Houlin
Keyword(s):  
Numerical Simulation ◽  
Centrifugal Pump ◽  
Pressure Pulsation ◽  
Vibration Velocity ◽  
Test Results ◽  
Obvious Effect ◽  
Performance Change ◽  
Pump Test ◽  
Simulation Results ◽  
Axis Passing

The wear-ring abrasion can cause performance degradation of the marine centrifugal pump. In order to study the effect of front and back wear-ring clearance on a pump, test and numerical simulation were used to investigate the performance change of a pump. The test results show that the head and efficiency of pump decrease by 3.56% and 9.62% respectively at 1.0 Qd due to the wear-ring abrasion. Under 1.0 Qd, with the increase of the front wear-ring the vibration velocity at pump foot increases from 0.4 mm/s to 1.0 mm/s. The axis passing frequency (APF) at the measuring points increases significantly and there appears new characteristic frequency of 3APF and 4APF. The numerical simulation results show that the front wear-ring abrasion affects the flow at the inlet of the front chamber of the pump and impeller passage. And the back wear-ring abrasion has obvious effect on the flow in the back chamber of the pump and impeller passage, while the multi-malfunction of the front wear-ring abrasion and back wear-ring abrasion has the most obvious effect on the flow velocity and flow stability inside pump. The pressure pulsation at Blade Passing Frequency (BPF) of the three schemes all decrease with the increase of the clearance.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

On the Modeling of the Wheatstone-Bridge Piezoresistive Pressure Sensor: A Finite-Element-Based Approach

1999 ◽  
Author(s):  
Chahid K. Ghaddar ◽  
John R. Gilbert
Keyword(s):  
Finite Element ◽  
Concentration Profile ◽  
Pressure Sensor ◽  
Dopant Concentration ◽  
Wheatstone Bridge ◽  
Design Parameters ◽  
Angular Orientation ◽  
Junction Depth ◽  
Piezoresistive Pressure Sensor ◽  
Limited Diffusion

Abstract In this work we conduct a number of finite element simulations using the MEMCAD 5.0 system to evaluate the effect of various geometrical and process parameters on the Wheatstone bridge piezoresistive pressure sensor. In particular, results are presented for the following design parameters: the location of the resistors relative to the diaphragm edge; the angular orientation of the resistors; the planar dimensions of the resistors; and finally, the effects of dopant concentration profile and associated junction depth as computed by the limited-diffusion model.

scholarly journals Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
High Performance ◽  
Power Device ◽  
Simulation Tool ◽  
Process Technology ◽  
Surface Field ◽  
Kirk Effect ◽  
Tcad Simulation ◽  
Reduced Surface

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

scholarly journals Mechatronic Device for Locomotor Training

2016 ◽  
Vol 10 (4) ◽  
pp. 310-315 ◽  
Author(s):  
Sławomir Duda ◽  
Damian Gąsiorek ◽  
Grzegorz Gembalczyk ◽  
Sławomir Kciuk ◽  
Arkadiusz Mężyk
Keyword(s):  
Experimental Data ◽  
Numerical Simulation ◽  
Measurement Data ◽  
Healthy Person ◽  
Control Algorithms ◽  
Design Team ◽  
Locomotor Training ◽  
Interdisciplinary Design ◽  
Machine Control ◽  
Simulation Results

Abstract This paper presents a novel mechatronic device to support a gait reeducation process. The conceptual works were done by the interdisciplinary design team. This collaboration allowed to perform a device that would connect the current findings in the fields of biomechanics and mechatronics. In the first part of the article shown a construction of the device which is based on the structure of an overhead travelling crane. The rest of the article contains the issues related to machine control system. In the prototype, the control of drive system is conducted by means of two RT-DAC4/PCI real time cards connected with a signal conditioning interface. Authors present the developed control algorithms and optimization process of the controller settings values. The summary contains a comparison of some numerical simulation results and experimental data from the sensors mounted on the device. The measurement data were obtained during the gait of a healthy person.

Verification of modeling of convective events based on radar reflectivity

2021 ◽  
Author(s):  
Ekaterina Svechnikova ◽  
Nikolay Ilin ◽  
Evgeny Mareev
Keyword(s):  
General Pattern ◽  
Measurement Data ◽  
Quantitative Agreement ◽  
Convective Event ◽  
Simulation Results ◽  
Verification Process ◽  
Using Data ◽  
Wrf Modeling ◽  
Probabilistic Nature

<p>The use of numerical modeling for atmospheric research is complicated by the problem of verification by a limited set of measurement data. Comparison with radar measurements is widely used for assessing the quality of the simulation. The probabilistic nature of the development of convective phenomena determines the complexity of the verification process: the reproduction of the pattern of the convective event is prior to the quantitative agreement of the values at a particular point at a particular moment.</p><p>We propose a method for verifying the simulation results based on comparing areas with the same reflectivity. The method is applied for verification of WRF-modeling of convective events in the Aragats highland massif in Armenia. It is shown that numerical simulation demonstrates approximately the same form of distribution of areas of equal reflectivity as for radar-measured reflectivity. In this case, the model tends to overestimate on average reflectivity, while enabling us to obtain the qualitatively correct description of the convective phenomenon.</p><p>The proposed technique can be used to verify the simulation results using data on reflectivity obtained by a satellite or a meteoradar. The technique allows one to avoid subjectivity in the interpretation of simulation results and estimate the quality of reproducing the “general pattern” of the convective event.</p>

The Comparison of Tunnel Engineering Construction Methods for Renhechang Tunnel Crossing Underneath Existing Tunnel on Lanzhou-Chongqing Railway

2013 ◽  
Vol 405-408 ◽  
pp. 1330-1333 ◽  
Author(s):  
Chuan Yi Sui ◽  
Xu Dong Zhou ◽  
Lin Hui Wang
Keyword(s):  
Field Measurement ◽  
Measurement Data ◽  
Tunnel Construction ◽  
Tunnel Engineering ◽  
Engineering Construction ◽  
Existing Structures ◽  
Construction Methods ◽  
Tunneling Method ◽  
Simulation Results ◽  
The Cross

Problems often exist in construction of transportation tunnels, such as the effect of new tunnels constructed close to existing structures. Solving this magnificent problem by carefully choosing tunnel construction methods will be beneficial to minimize effects on existing structures while ensuring the newly constructed tunnel is both time-consuming and economical. Three representative engineering methods-the benching tunneling method, the Center Diaphragm method and the Cross Diaphragm method-are compared in controlling the settlement of new tunnel vault and the deformation of the existing tunnel. Finally checking the simulation results by comparing with field measurement data.

Ultra Shallow Junctions Optimization with Non Doping Species Co-implantation

2006 ◽  
Vol 912 ◽  
Author(s):  
Nathalie Cagnat ◽  
Cyrille Laviron ◽  
Daniel Mathiot ◽  
Blandine Duriez ◽  
Julien Singer ◽  
...  
Keyword(s):  
Experimental Study ◽  
Integrated Circuits ◽  
Dopant Concentration ◽  
Junction Depth ◽  
Complex Interactions ◽  
Implantation Damage ◽  
Efficient Diffusion ◽  
Shallow Junctions ◽  
Light Ions ◽  
Ultra Shallow Junctions

AbstractThe permanent decrease of the transistor size to improve the performances of integrated circuits must be accompanied by a permanent decrease of the depth of the source-drain junctions. At the same time, in order to keep acceptable sheet resistance values, the dopant concentration in the source-drain areas has to be continuously increased. A possible technological way to meet the junction depth and abruptness requirements is to use co-implantation of non doping species with classical implantations, especially for light ions as B or P.In order to clarify the complex interactions occurring during these co-implantation processes, we have performed an extensive experimental study of the effect of Ge, F, N, C and their combinations on boron. A special interest was given to the overall integration issues. We will show that it is required to optimize the respective locations of co-implanted species with respect to the B profiles (more precisely the ion implantation damage locations), as well as the co-implanted species doses, to get an acceptable compromise between the efficient diffusion decrease required for the junction abruptness and depth, and a reasonable current leakages.

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