Effect of Mobility on (I-V) Characteristics of Gaas MESFET
2017 ◽
Vol 7
(1)
◽
pp. 169
Keyword(s):
<p class="Titre51"><span lang="EN-US">We present in this paper an analytical model of the current–voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. The predictions of the simulator are compared with the experimental data [01] and have been shown to be good.</span></p>
1992 ◽
Vol 03
(02)
◽
pp. 201-233
◽
Keyword(s):
2019 ◽
Vol 81
(2)
◽
pp. 41-46
Keyword(s):
2021 ◽
Vol 57
◽
pp. 67-79
A new method of determining the transport coefficients for high pressure arcs from experimental data
1969 ◽
Vol 3
(2)
◽
pp. 269-280
◽
2011 ◽
Vol 25
(10)
◽
pp. 739-745
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