scholarly journals Thermal Evolution of Deuterium in 4H-Sic

2002 ◽  
Vol 719 ◽  
Author(s):  
R. Delamare ◽  
E. Ntsoenzok ◽  
T. Sauvage ◽  
A. Shiryaev ◽  
A. van Veen ◽  
...  

Abstract4H-SiC samples were implanted at room temperature with 30 keV D+ ions at a dose of 5×1016 D+/cm2. Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were performed to study the deuterium profiles after subsequent annealing at 1000-1250°C for 10min.Also, analytical techniques: RBS/C and thermal desorption spectroscopy (TDS) were carried out to characterize the evolution of implantation induced defects upon annealing. According to the NRA measurements, no deuterium release was found in the sample annealed at 1000°C. However, increasing the temperature to 1150°C led to a 40% decrease of deuterium content. Similar results about the evolution of D profiles upon annealing have also been obtained by SIMS measurements. In addition, SIMS measurements show that the maximum of the deuterium concentration shifts to the surface. Deuterium desorption at annealing temperatures higher than 1000°C was further confirmed by TDS experiments. Results from RBS/C indicated that during the desorption of deuterium, the implantation induced damage was annealed. These results are discussed.

2002 ◽  
Vol 719 ◽  
Author(s):  
Gabrielle Regula ◽  
Rachid El Bouayadi ◽  
Bernard Pichaud ◽  
Sylvie Godey ◽  
Romain Delamare ◽  
...  

AbstractSilicon samples were implanted with He ions at 1.6 MeV using doses ranging from 1×1016 cm-2 to 1×1017cm-2 with different fluxes (0.4νA/cm2 - 2.0νA/cm2) and annealed at high (1000°C) and low temperatures (800°C). The implantation induced-defect structure and their distribution in the depth of the sample were studied by cross section electron microscopy (XTEM). An unexpected consequence of the flux on the defect population and density was found solely for 2×1016 cm-2, which is the upper threshold to get nano-bubbles at such large implantation depth. Nuclear Reaction Analysis (NRA) were performed to measure the ratio of He remaining in the bubbles as a function of time and temperature anneal. Some samples were gold or nickel diffused at temperatures ranging from 870°C to 1050°C prior to He implantation. The gettering efficiency of the implantation-induced defects was measured by secondary ion mass spectroscopy (SIMS), after a high temperature getter annealing. SIMS profiles exhibit a shape and a width closely related to the presence of the defects (observed by XTEM) which are very efficient sinks for all kinds of metal impurities. The bubbles were found to be more efficient traps than the dislocation loops.


1998 ◽  
Vol 540 ◽  
Author(s):  
S. Brunner ◽  
W. Puff ◽  
P. Mascher ◽  
A.G. Balogh

AbstractIn this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing. The nominally undoped samples were irradiated either with 3 MeV protons to a fluence of 1.2× 1018 p/cm2 or with 1 MeV electrons to a fluence of 1×1018 e/cm2. The investigation was performed with positron lifetime and Doppler-broadening measurements. The measurements were done at room temperature and in some cases down to 10 K to investigate the thermal dependence of the trapping characteristics of the positrons.


2021 ◽  
Author(s):  
Michael James Simmonds ◽  
Thomas Schwarz-Selinger ◽  
Marlene Idy Patino ◽  
Matthew J Baldwin ◽  
Russell P Doerner ◽  
...  

Abstract Deuterium (D) plasma exposure during annealing of self-ion damaged tungsten (W) is shown to exhibit reduced defect recovery when compared to annealing without D plasma exposure. In these experiments, samples were first damaged with 20 MeV W ions. Next, samples were annealed either with or without simultaneous D2 plasma exposure. The simultaneous annealed samples were first decorated by D2 plasma at 383 K prior to ramping up to an annealing temperature of 473, 573, 673, or 773 K and held for 1 hour with concurrent plasma exposure. The vacuum annealed samples each had a corresponding temperature history but without D$_2$ plasma treatment. Finally, all samples were exposed to D2 plasma at 383 K to decorate any remaining defects. Nuclear reaction analysis (NRA) and thermal desorption spectroscopy (TDS) shows that the simultaneous plasma-exposed and annealed samples exhibited virtually no defect recovery at annealing temperatures of up to 673 K, and had higher D retention than found in the vacuum annealed samples. TDS results indicate that only the lowest detrapping energy defects recover at an 773~K anneal for the simultaneous plasma annealed samples, while the vacuum annealed samples showed defect recovery at all anneal temperatures. This experiment clearly demonstrates that D occupied defects can significantly reduce or eliminate defect annealing in W, and is consistent with the existence of synergistic plasma exposure/displacement damage effects in fusion-energy relevant plasma facing materials.


2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.


1993 ◽  
Vol 8 (3) ◽  
pp. 605-610 ◽  
Author(s):  
M.C. Caracoche ◽  
P.C. Rivas ◽  
A.F. Pasquevich ◽  
A.R. López García ◽  
E. Aglietti ◽  
...  

The time-differential perturbed angular correlation technique has been used to investigate the thermal behavior of a ZrO2−13.6 mole % MgO ceramic between room temperature and 1423 K. Two different quadrupole hyperfine interactions corresponding to a tetragonal structure have been found to result on cooling the ceramic from the single-phase cubic field. One of them agrees with that depicting the pure t-ZrO2 tetragonal phase and the other one has been interpreted as describing a high-MgO-content nontransformable t'–ZrO2 phase. As temperature increases, the latter gives rise to a similar but fluctuating interaction related to the oxygen vacancies mobility and which shows a thermal behavior analogous to that already reported for the stabilized cubic ZrO2. Above 1100 K these dynamic t'-sites transform into pure tetragonal ones which behave ordinarily, suffering the t → m phase transition when cooling to room temperature. Differences found between TDPAC results and information drawn from other techniques are discussed.


1989 ◽  
Vol 157 ◽  
Author(s):  
J.A. Knapp ◽  
T.R. Guilinger ◽  
M.J. Kelly ◽  
D. Walsh ◽  
B.L. Doyle

ABSTRACTA key element of recent assertions of "cold fusion" has been the claim that electrochemical loading of deuterium into Pd electrodes can produce D:Pd levels exceeding 1:1. Using external beam nuclear reaction analysis of Pd foil electrodes in operating electrochemical cells, we have directly monitored deuterium content in-situ. No conditions were found which resulted in loadings higher than ∼0.9.


1990 ◽  
Vol 181 ◽  
Author(s):  
Yow-Tzong Shy ◽  
Shyam P. Murarka ◽  
Carlton L. Shepard ◽  
William A. Lanford

ABSTRACTBilayers of Cu with TiSi2 and TaSi2 were tested by furnace annealing at temperatures from 200 to 500°C. Rutherford Back Scattering (RBS) technique was used to investigate the interaction between various films and determine the stability of Cu on silicide structures. The sheet resistance was also monitored. The results show that Cu on TiSi2 and TaSi2 structures are extremely stable structures at annealing temperatures in the range of room temperature to 500 °C. In such structures, therefore, there will not be a need of any diffusion barrier between Cu and the silicide films.


2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.


Author(s):  
Cole T. Edwards ◽  
Clive M. Jones ◽  
Page C. Quinton ◽  
David A. Fike

The oxygen isotopic compositions (δ18O) of minimally altered phosphate minerals and fossils, such as conodont elements, are used as a proxy for past ocean temperature. Phosphate is thermally stable under low to moderate burial conditions and is ideal for reconstructing seawater temperatures because the P-O bonds are highly resistant to isotopic exchange during diagenesis. Traditional bulk methods used to measure conodont δ18O include multiple conodont elements, which can reflect different environments and potentially yield an aggregate δ18O value derived from a mixture of different water masses. In situ spot analyses of individual elements using micro-analytical techniques, such as secondary ion mass spectrometry (SIMS), can address these issues. Here we present 108 new δ18O values using SIMS from conodont apatite collected from four Lower to Upper Ordovician stratigraphic successions from North America (Nevada, Oklahoma, and the Cincinnati Arch region of Kentucky and Indiana, USA). The available elements measured had a range of thermal alteration regimes that are categorized based on their conodont alteration index (CAI) as either low (CAI = 1−2) or high (CAI = 3−4). Though individual spot analyses of the same element yield δ18O values that vary by several per mil (‰), most form a normal distribution around a mean value. Isotopic variability of individual spots can be minimized by avoiding surficial heterogeneities like cracks, pits, or near the edge of the element and the precision can be improved with multiple (≥4) spot analyses of the same element. Mean δ18O values from multiple conodonts from the same bed range between 0.0 and 4.3‰ (median 1.0‰), regardless of low or high CAI values. Oxygen isotopic values measured using SIMS in this study reproduce values similar to published trends, namely, δ18O values increase during the Early−Middle Ordovician and plateau by the mid Darriwilian (late Middle Ordovician). Twenty-two of the measured conodonts were from ten sampled beds that had been previously measured using bulk analysis. SIMS-based δ18O values from these samples are more positive by an average of 1.7‰ compared to bulk values, consistent with observations by others who attribute the shift to carbonate- and hydroxyl-related SIMS matrix effects. This offset has implications for paleo-temperature model estimates, which indicate that a 4 °C temperature change corresponds to a 1‰ shift in δ18O (‰). Although this uncertainty precludes precise paleo-temperature reconstructions by SIMS, it is valuable for identifying spatial and stratigraphic trends in temperature that might not have been previously possible with bulk approaches.


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