scholarly journals STUDY OF METHODS FOR REDUCING POWER CONSUMPTION AND AREA FOR A DIGITAL PART OF THE RFID-TAG

Author(s):  
Kirill Liubavin ◽  
Alexander Losevskoy ◽  
Igor Ermakov

The results of the development of a digital part for the low-frequency RFID tag and the results of power saving methods study in 180 nm, 90 nm and 45 nm CMOS processes are presented. Using of the presented methods allows to reduce the power consumption and area of the digital part by 400 % and by 50 %, respectively. For the target 180 nm CMOS process the maximum dynamic power is less than 1 μW, and the occupied area is 0.042 mm2.

Author(s):  
Kirill D. Liubavin ◽  
Igor V. Ermakov ◽  
Alexander Y. Losevskoy ◽  
Andrey V. Nuykin ◽  
Alexander S. Strakhov
Keyword(s):  
Rfid Tag ◽  

2013 ◽  
Vol 340 ◽  
pp. 792-796 ◽  
Author(s):  
Peng Fei Lai ◽  
Wei Ping Jing

For the two kinds of commonly used codes in low frequency read-only RFID tag: Manchester encoding and Differential Bi-Phase encoding, we designed the corresponding encoding circuit, as shown in Fig. 5 and Fig. 10. It was fabricated by SMIC 0.35um CMOS process through full custom design method and has been successfully applied to a read-only RFID tag based on ISO/IEC 11784/5 standard. The chip testing result shows that the designed circuit can achieve ideal encoding effect, as shown in Fig. 14 and Fig. 15, which possesses the properties of high accuracy and strong anti-disturbance.


VLSI Design ◽  
2002 ◽  
Vol 15 (3) ◽  
pp. 563-586 ◽  
Author(s):  
Imed Ben Dhaou ◽  
Keshab K. Parhi ◽  
Hannu Tenhunen

In deep-submicron technology, global interconnect capacitances have started reaching several orders of magnitude greater than the intrinsic capacitances of the CMOS gates. The dynamic power consumption of a CMOS gate driving a global wire is the sum of the power dissipated due to (dis)charging (i) the intrinsic capacitance of the gate, and (ii) the wire capacitance. The latter is referred to as on-chip signaling power consumption. In this paper, a scheme has been proposed for combating crosstalk noise and reducing power consumption while driving the global wire at an optimal delay. This scheme is based on reduced voltage-swing signaling combined with buffer-insertion and resizing. The buffers are inserted and resized to compensate for the speed degradation caused by scaling the supply voltage and eradicating the crosstalk noise. A new buffer insertion algorithm called VIJIM has been described here, along with accurate delay and crosstalk-noise estimation algorithms for distributed RLC wires. The experimental results show that the VIJIM algorithm inserts fewer buffers into non-critical nets than does the existing buffer-insertion algorithms. In a 0.25 mm CMOS process, the experimental results show that energy savings of over 60% can be achived if the supply voltage is reduced from 2.5 to 1.5 V.


Circuit World ◽  
2020 ◽  
Vol 46 (2) ◽  
pp. 71-83
Author(s):  
Afreen Khursheed ◽  
Kavita Khare

Purpose This paper is an unprecedented effort to resolve the performance issue of very large scale integrated circuits (VLSI) interconnects encountered because of the scaling of device dimensions. Repeater interpolation technique is an effective approach for enhancing speed of interconnect network. Proposed buffers as repeater are modeled by using dual chirality multi-Vt technology to reduce delay besides mitigating average power consumption. Interconnects modeled with carbon nanotube (CNT) technology are compared with copper interconnect for various lengths. Buffer circuits are designed with both CNT and metal oxide semiconductor technology for comparison by using various combination of (CMOSFET repeater-Cu interconnect) and (CNTFET repeater-CNT interconnect). Compared to conventional buffer, ProposedBuffer1 saves dynamic power by 84.86%, leakage power by 88% and offers reduction in delay by 72%. ProposedBuffer2 brings about dynamic power saving of 99.94%, leakage power saving of 93%, but causes delay penalty. Simulation using Stanford SPICE model for CNT and silicon-field effective transistor berkeley short-channel IGFET Model4 (BSIM4) predictive technology model (PTM) for MOS is done in H simulation program with integrated circuit emphasis for 32 nm. Design/methodology/approach Usually, the dynamic power consumption dominates the total power, while the leakage power has a negligible effect. But with the scaling of device technology, leakage power has become one of the important factors of consideration in low power design techniques. Various strategies are explored to suppress the leakage power in standby mode. The adoption of a multi-threshold design strategy is an effective approach to improve the performance of buffer circuits without compromising on the delay and area overhead. Unlike MOS technology, to implement multi-Vt transistors in case of CNT technology is quite easy. It can be achieved by varying diameter of carbon nanotubes using chirality control. Findings An unprecedented approach is taken for optimizing the delay and power dissipation and hence drastically reducing energy consumption by keeping proper harmony between wire technology and repeater-buffer technology. This paper proposes two novel ultra-low power buffers (PB1 and PB2) as repeaters for high-speed interconnect applications in portable devices. PB1 buffer implemented with high-speed CML technique nested with multi-threshold (Vt) technology sleep transistor so as to improve the speed along with a reduction in standby power consumption. PB2 is judicially implemented by inserting separable sized, dual chirality P type carbon nanotube field effective transistors. The HSpice simulation results justify the correctness of schemes. Originality/value Result analysis points out that compared to conventional Cu interconnect, the CNT interconnects paired with Proposed CNTFET buffer designs are more energy efficient. PB1 saves dynamic power by 84.86%, reduces propagation delay by 72% and leakage power consumption by 88%. PB2 brings about dynamic power saving of 99.4%, leakage power saving of 93%, with improvement in speed by 52%. This is mainly because of the fact that CNT interconnect offers low resistance and CNTFET drivers have high mobility and ballistic mode of operation.


2014 ◽  
Vol 513-517 ◽  
pp. 2938-2942
Author(s):  
Wei Lv ◽  
Xin An Wang ◽  
Ji Ting Su

This paper presents a novel low-power digital baseband for UHF RFID tag. The design is complied with a modified ISO 18000-6C protocol. In order to reduce the peak power, module-reuse and other advanced low power techniques are applied. And a novel baseband architecture is discussed, which fulfills the protocol functions and reduces power consumption. The whole tag chip, including digital baseband, RF/analog frontend and memory, has been taped out using TSMC 0.18um CMOS process. The chip area is 89234 um2 excluding test pads. Its power consumption is 11.63uw under 1.1v power supply.


Sensors ◽  
2019 ◽  
Vol 19 (22) ◽  
pp. 4944 ◽  
Author(s):  
Mamta Agiwal ◽  
Mukesh Kumar Maheshwari ◽  
Hu Jin

Sensors enabled Internet of things (IoT) has become an integral part of the modern, digital and connected ecosystem. Narrowband IoT (NB-IoT) technology is one of its economical versions preferable when low power and resource limited sensors based applications are considered. One of the major characteristics of NB-IoT technology is its offer of reliable coverage enhancement (CE) which is achieved by repeating the transmission of signals. This repeated transmission of the same signal challenges power saving in low complexity NB-IoT devices. Additionally, the NB-IoT devices are expected to suffer from congestion due to simultaneous random access procedures (RAPs) from an enormous number of devices. Multiple RAP reattempts would further reduce the power saving in NB-IoT devices. We propose a novel power efficient RAP (PE-RAP) for reducing power consumption of NB-IoT devices in a highly congested environment. The existing RAP do not differentiate the failures due to poor channel conditions or due to collision. After the RAP failure either due to collision or poor channel, the devices can apply power ramping or can transit to a higher CE level with higher repetition configuration. In the proposed PE-RAP, the NB-IoT devices can re-ascertain the channel conditions after an RAP attempt failure such that the impediments due to poor channel are reduced. The power increments and repetition enhancements are applied only when necessary. We probabilistically obtain the chances of RAP reattempts. Subsequently, we evaluate the average power consumption by devices in different CE levels for different repetition configurations. We validate our analysis by simulation studies.


2016 ◽  
Vol 15 (13) ◽  
pp. 7333-7341 ◽  
Author(s):  
Sakshi Grover ◽  
Mr. Navtej Singh Ghumman

Cloud Computing is a technology that provides a platform for the sharing of resources such as software, infrastructure, application and other information. Cloud Computing is being used widely all over the world by many IT companies as it provides benefits to the users like cost saving and ease of use.  However with the growing demands of users for computing services, cloud providers are encouraged to deploy large datacenters which consume very high amount of energy resulting in carbon dioxide emissions.  Power consumption is a key concern in data centers. That type of critical issues not only reduces the profit margin, but also has effect on high carbon production which is harmful for environment and living organisms. Reducing power consumption has been an important requirement for cloud resource providers not only to reduce operating costs, but also to improve system reliability. In research work, we have arranged the virtual machines in ascending order of the load. Cloudlets would be assigned to that virtual machine that has lesser load. Cloudlets are divided into three categories like high, medium and low on the basis of their instruction length. Dvfs approach which has been implemented in the paper would scale the power according to the length of the cloudlets. Three modes of Dvfs have been implemented in the research work. Various parameters like processing time, processing cost and total power consumed by all the cloudlets at the data center have been computed and analyzed. Cloudsim a toolkit for modeling and simulation of cloud computing environment has been used to implement and demonstrate the experimental results.


Author(s):  
Jorge Pérez Bailón ◽  
Jaime Ramírez-Angulo ◽  
Belén Calvo ◽  
Nicolás Medrano

This paper presents a Variable Gain Amplifier (VGA) designed in a 0.18 μm CMOS process to operate in an impedance sensing interface. Based on a transconductance-transimpedance (TC-TI) approach with intermediate analog-controlled current steering, it exhibits a gain ranging from 5 dB to 38 dB with a constant bandwidth around 318 kHz, a power consumption of 15.5 μW at a 1.8 V supply and an active area of 0.021 mm2.


Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.


2020 ◽  
Vol 11 (1) ◽  
pp. 129
Author(s):  
Po-Yu Kuo ◽  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Jin-Fa Lin

The conventional shift register consists of master and slave (MS) latches with each latch receiving the data from the previous stage. Therefore, the same data are stored in two latches separately. It leads to consuming more electrical power and occupying more layout area, which is not satisfactory to most circuit designers. To solve this issue, a novel cross-latch shift register (CLSR) scheme is proposed. It significantly reduced the number of transistors needed for a 256-bit shifter register by 48.33% as compared with the conventional MS latch design. To further verify its functions, this CLSR was implemented by using TSMC 40 nm CMOS process standard technology. The simulation results reveal that the proposed CLSR reduced the average power consumption by 36%, cut the leakage power by 60.53%, and eliminated layout area by 34.76% at a supply voltage of 0.9 V with an operating frequency of 250 MHz, as compared with the MS latch.


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