scholarly journals A Compact Eight-terminal Piezotransducer for Stress Measurements in Silicon

2017 ◽  
Vol 12 (1) ◽  
pp. 24-32
Author(s):  
Jose L. Ramirez ◽  
Fabiano Fruett
Keyword(s):  
Stress State ◽  
Integrated Circuits ◽  
Carrier Mobility ◽  
Structural Integrity ◽  
Uniaxial Stress ◽  
Silicon Chips ◽  
Four Point Bending ◽  
Stress Sensing ◽  
The Relationship

Deformations in the crystalline structure have an important impact in electric characteristics of the semiconductors, like carrier mobility and concentration. Since mechanical stress and strain are related, an induced stress in silicon chips compromise the performance and structural integrity of Integrated Circuits (ICs). Reason why stress sensing devices are becoming important tools to detect and correct stress related problems, improving the performance and yield of ICs. This work shows the design and characterization of an Eight Terminals Silicon Piezotransduzer (8TSP), a stress sensor device based on the piezoresistive effect and designed to estimate the stress state over the (100) silicon surface. The multi-terminal device integrates a resistor rosette in a single octagonal plate, allowing to change the bias direction and to take measure in different orientations, the relationship between those observations can be used to estimate both direction and magnitude of the stress in a certain area. In order to characterize the device, a four-point-bending apparatus using a circular substrate has to be designed to have control of both magnitude and direction of the applied uniaxial stress. The device was attached to a disk and stress was applied in the main crystallographic directions to observe the piezoresistance characteristics and calibrate the sensor. We applied stress in some other directions and the stress behavior fit the predicted by the theory. Those results confirm that the 8TPS can be used to find the stress state over the surface of a silicon chip.

Characterization of the Piezoresistive Coefficients of (100) Silicon From −150 to +125C

2007 ◽  
Author(s):  
Chun-Hyung Cho ◽  
Richard C. Jaeger ◽  
Jeffrey C. Suhling
Keyword(s):  
Integrated Circuit ◽  
Carrier Mobility ◽  
Limited Data ◽  
Experimental Calibration ◽  
Four Point Bending ◽  
Stress Sensors ◽  
Stress Sensing ◽  
Test Chips ◽  
Crystallographic Axes

Stress sensing test chips are widely utilized to investigate integrated circuit die stresses arising from assembly and packaging operations. The test chips incorporate resistor or transistor sensing elements that are able to measure stresses by observing the changes in their resistivity or carrier mobility. This piezoresistive behavior of such sensors is characterized by three piezoresistive coefficients, which are electro-mechanical material constants. We are interested in stress characterization over a very broad range of temperatures. However, the literature provides limited data over the desired range, and even the data at room temperature, exhibit wide discrepancies in magnitude as well as sign. This work focuses on an extensive experimental study of the temperature dependence of the piezoresistive coefficients, π11, π12, and π44, for both p- and n-type silicon. In order to minimize errors associated with misalignment with the crystallographic axes on (100) silicon wafers, anisotropic wet etching was used in this work to accurately locate the axes. A special four-point bending apparatus has been constructed and integrated into an environmental chamber capable of temperatures from −155 to +300°C. Experimental calibration results for the piezoresistive coefficients as a function of temperature from −150°C to +125°C are presented and compared and contrasted with existing values from literature. Measurements were performed using stress sensors fabricated on (100) silicon mounted on PCB material including both die-on-beam and strip-on-beam mounting techniques. Four-point bending (4PB) was used to generate the required stress, and finite element simulations have been used to determine the actual states of stress in the silicon material.

Evaluation Method for Performance of SiC Power Module by Electro-Thermal-Anisotropic Stress Coupled Analysis

2018 ◽  
Author(s):  
Mitsuaki Kato ◽  
Akihiro Goryu ◽  
Akira Kano ◽  
Kazuto Takao ◽  
Kenji Hirohata ◽  
...  
Keyword(s):  
Internal Stress ◽  
Electrical Resistance ◽  
Evaluation Method ◽  
Uniaxial Stress ◽  
Electrical Circuit ◽  
Coupled Analysis ◽  
Analysis Method ◽  
Four Point Bending ◽  
Power Modules ◽  
The Relationship

Silicon carbide (SiC) has attracted increasing attention as a material suitable for use with high breakdown voltages and at high temperatures. The effects of residual stress and thermal stress on the electrical properties are therefore a matter of growing concern. To analyze the effects, multi-physics simulation is required. The aim of this study is to present an evaluation method for SiC power modules by electro-thermal-stress coupled analysis. In this analysis, we investigate the relationship among mechanical stress, temperature, and electrical resistance in 4H-SiC MOSFET. To investigate the relationship, we used a four-point bending system that is capable of applying uniaxial stress to the SiC device. We prepared two kinds of test specimens with the uniaxial stress direction of four-point bending coinciding with the 〈112̄0〉 and 〈11̄00〉 direction of SiC. To associate the four-point bending load with the stress components in the SiC device, the four-point bending test was simulated by the finite element method. Tensile or compressive load was applied to two types of test specimens, and the internal stress of the SiC device was determined. To determine the internal stress during operation and mounting, the simple module model was also simulated by the structural analysis method. The internal stress was simulated from mounting temperature to the operating temperature. An electrical circuit and thermal circuit were constructed for the DC-DC converter in the above-described module for the coupled analysis method. The relationship among mechanical stress, temperature, and electrical resistance was incorporated into the additional resistance of the MOSFET in the electrical circuit. When an isotropic stress from −500 to 1400 MPa was applied with the SiC under the oxide film in the one parallel DC-DC converter, the change in the power conversion efficiency was about 0.16%. This indicates that our proposed method is a useful simulation method for SiC power modules.

Skeletal elements of crinoid echinoderms: High-resolution structural and microanalytical results

1983 ◽  
Vol 41 ◽  
pp. 194-195
Author(s):  
D. F. Blake ◽  
L. F. Allard ◽  
D. R. Peacor
Keyword(s):  
High Resolution ◽  
Marine Invertebrates ◽  
Sea Urchins ◽  
Structural Features ◽  
Sea Stars ◽  
High Resolution Tem ◽  
Relationship Of ◽  
The Relationship ◽  
Insight Into

Echinodermata is a phylum of marine invertebrates which has been extant since Cambrian time (c.a. 500 m.y. before the present). Modern examples of echinoderms include sea urchins, sea stars, and sea lilies (crinoids). The endoskeletons of echinoderms are composed of plates or ossicles (Fig. 1) which are with few exceptions, porous, single crystals of high-magnesian calcite. Despite their single crystal nature, fracture surfaces do not exhibit the near-perfect {10.4} cleavage characteristic of inorganic calcite. This paradoxical mix of biogenic and inorganic features has prompted much recent work on echinoderm skeletal crystallography. Furthermore, fossil echinoderm hard parts comprise a volumetrically significant portion of some marine limestones sequences. The ultrastructural and microchemical characterization of modern skeletal material should lend insight into: 1). The nature of the biogenic processes involved, for example, the relationship of Mg heterogeneity to morphological and structural features in modern echinoderm material, and 2). The nature of the diagenetic changes undergone by their ancient, fossilized counterparts. In this study, high resolution TEM (HRTEM), high voltage TEM (HVTEM), and STEM microanalysis are used to characterize tha ultrastructural and microchemical composition of skeletal elements of the modern crinoid Neocrinus blakei.

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

Characterization of Interconnect Defects Using Scanning Thermal Conductivity Microscopy

2004 ◽  
Author(s):  
H.W. Ho ◽  
J.C.H. Phang ◽  
A. Altes ◽  
L.J. Balk
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Large Scale

Abstract In this paper, scanning thermal conductivity microscopy is used to characterize interconnect defects due to electromigration. Similar features are observed both in the temperature and thermal conductivity micrographs. The key advantage of the thermal conductivity mode is that specimen bias is not required. This is an important advantage for the characterization of defects in large scale integrated circuits. The thermal conductivity micrographs of extrusion, exposed and subsurface voids are presented and compared with the corresponding topography and temperature micrographs.

Emerging Techniques for the Characterization of Nano-Mechanical Properties of Integrated Circuit Components

2008 ◽  
Author(s):  
Nicholas Randall ◽  
Rahul Premachandran Nair
Keyword(s):  
Mechanical Properties ◽  
Quality Control ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Manufacturing Process ◽  
Solder Bumps ◽  
Initial Work ◽  
Circuit Components ◽  
Materials Used

Abstract With the growing complexity of integrated circuits (IC) comes the issue of quality control during the manufacturing process. In order to avoid late realization of design flaws which could be very expensive, the characterization of the mechanical properties of the IC components needs to be carried out in a more efficient and standardized manner. The effects of changes in the manufacturing process and materials used on the functioning and reliability of the final device also need to be addressed. Initial work on accurately determining several key mechanical properties of bonding pads, solder bumps and coatings using a combination of different methods and equipment has been summarized.

Neuropharmacological Characterization of Dioclea altissima Seed Lectin (DAL) in Mice: Evidence of Anxiolytic-like Effect Mediated by Serotonergic, GABAergic Receptors and NO Pathway

2020 ◽  
Vol 26 (31) ◽  
pp. 3895-3904
Author(s):  
João R.C. Araújo ◽  
Adriana R. Campos ◽  
Marina de Barros M.V. Damasceno ◽  
Sacha A.A.R. Santos ◽  
Maria K.A. Ferreira ◽  
...  
Keyword(s):  
Structural Integrity ◽  
Elevated Plus Maze ◽  
Biological Activities ◽  
Plant Lectins ◽  
Plus Maze ◽  
Marble Burying ◽  
Gabaergic Receptors ◽  
The Central Nervous System ◽  
Hole Board

Background: Plant lectins have shown promising biological activities in the central nervous system (CNS). Objective: This study evaluated the effect of DAL, a lectin isolated from the seeds of the Dioclea altissima species, having binding affinity to D-glucose or D-mannose residues, on mice behavior. Methods: Mice (n=6/group) were treated (i.p.) with DAL (0.25, 0.5 or 1 mg/kg) or vehicle and subjected to several tests (open field/OFT, marble-burying/MBT, hole-board/HBT, elevated plus maze/PMT, tail suspension/ TST, forced swimming/FST or rotarod/RRT). Pizotifen, cyproheptadine, flumazenil, L-NAME, 7-NI, Larginine or yohimbine were administered 15 min before DAL (0.5 mg/kg) and the animals were evaluated on PMT. It was also verified whether the DAL effect depended on its structural integrity and ability to interact with carbohydrates. Results: The results showed there were no neurobehavioral changes in the mice at the RRT, FST and locomotion in the OFT. DAL (0.25, 0.5 or 1 mg/kg) increased the behavior of grooming and rearing in the OFT, head dips in the HBT, pedalling in the TST and decreased the number of marbles hidden in the MBT. In the PMT, DAL (0.25, 0.5 and 1 mg/kg) and Diazepam increased the frequency of entries in the open arms and the time of permanence in the open arms without affecting the locomotor activity. The effect of DAL was dependent on carbohydrate interaction and protein structure integrity and it prevented by pizotifen, cyproheptadine, flumazenil, L-NAME and 7-NI, but not by L-arginine or yohimbine. Conclusion: DAL was found to have an anxiolytic-like effect mediated by the 5-HT and GABAergic receptors and NO pathway.

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