scholarly journals A 5 V to 180 V Charge Pump for Capacitive Loads in a 180 nm SOI Process

2021 ◽  
Author(s):  
Jakob K. Toft ◽  
Ivan H. H. Jorgensen
Keyword(s):  
High Voltage ◽  
Rise Time ◽  
Output Voltage ◽  
Supply Voltage ◽  
State Of The Art ◽  
Charge Pump ◽  
Micro Electro Mechanical System ◽  
Charge Pumps ◽  
Capacitive Load ◽  
Very High

This paper presents two variants of a high step-up ratio charge pump for high voltage micro electro-mechanical system and condenser microphones. The implementations are based on an additive charge pump topology where respectively 46 and 57 cascaded stages are used to generate an output voltage of 182 V from a supply voltage of 5 V. The two charge pumps have been fabricated in a 180 nm SOI process with a breakdown voltage of more than 200 V and respectively occupy an area of 0.52 mm2 and 0.39 mm2. The charge pumps can output up to 182.5 V and 181.7 V and are designed to drive a capacitive load with a leakage of 2 nA. When driven with a 100 kHz clock, their power consumption is respectively 40 µW and 20 µW. The rise time of the charge pumps output from 0 V to 182 V is less than 5 ms. The implemented charge pumps exhibit state-of-the-art performance for very high voltage dc-dc capacitive drive applications.

scholarly journals Analysis of Charge Pump Topologies for High Voltage Mobile Microphone Applications

2021 ◽  
Vol 27 (2) ◽  
pp. 31-39
Author(s):  
Jakob K. Toft ◽  
Ivan H. H. Jorgensen
Keyword(s):  
Power Consumption ◽  
Mechanical System ◽  
High Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Micro Electro Mechanical System ◽  
Silicon On Insulator ◽  
High Bias ◽  
Low Supply Voltage ◽  
Very High

This paper presents a novel analysis of charge pump topologies for very high voltage capacitive drive micro electro-mechanical system microphones. For the application, the size and power consumption are sought to be minimized, and a voltage gain of 36 is achieved from a 5 V supply. The analysis compares known charge pump topologies, taking into consideration on resistance of transistors and parasitic capacitances of transistors and capacitors in a 180 nm silicon-on-insulator process. The analysis finds that the Pelliconi charge pump topology is optimal for generating very high bias voltages for micro electro-mechanical system microphones from a low supply voltage when the power consumption and area are limited by the application.

scholarly journals Efficiency of Innovative Charge Pump versus Clock Frequency and MOSFETs Sizes

2016 ◽  
Vol 16 (5) ◽  
pp. 260-265 ◽  
Author(s):  
David Matoušek ◽  
Jiří Hospodka ◽  
Ondřej Šubrt
Keyword(s):  
Output Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Specific Power ◽  
Pump Efficiency ◽  
Clock Frequency ◽  
Output Current ◽  
Charge Pumps ◽  
Complex Optimization ◽  
Charge Pump Circuit

Abstract Charge pumps are circuits that produce the voltage higher than supply voltage or negative voltage. Today, charge pumps became an integral part of the electronic equipment. The integration of charge pumps directly into the system allows manufacturers to feed a complex system with many specific power requirements from a single source. However, charge pump efficiency is reduced by many phenomena. This paper is focused on the question of efficiency of proposed variant of the charge pump. In this article, the efficiency dependence on a number of stages, output current, clock frequency and MOSFETs sizes was simulated by Eldo. The aim of this study is to determine the MOSFETs sizes and theirs influence to efficiency and the output voltage. Complex optimization of the charge pump circuit will follow in further text.

scholarly journals A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4149
Author(s):  
Xiang Li ◽  
Rui Li ◽  
Chunge Ju ◽  
Bo Hou ◽  
Qi Wei ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Voltage ◽  
Output Voltage ◽  
Charge Pump ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Temperature Changes ◽  
Adjustable Range

Micromachined gyroscopes require high voltage (HV) for actuation and detection to improve its precision, but the deviation of the HV caused by temperature fluctuations will degrade the sensor’s performance. In this paper, a high-voltage temperature-insensitive charge pump is proposed. Without adopting BCD (bipolar-CMOS-DMOS) technology, the output voltage can be boosted over the breakdown voltage of n-well/substrate diode using triple-well NMOS (n-type metal-oxide-semiconductor) transistors. By controlling the pumping clock’s amplitude continuously, closed-loop regulation is realized to reduce the output voltage’s sensitivity to temperature changes. Besides, the output level is programmable linearly in a large range by changing the reference voltage. The whole circuit has been fabricated in a 0.18- μ m standard CMOS (complementary metal-oxide-semiconductor) process with a total area of 2.53 mm 2 . Measurements indicate that its output voltage has a linear adjustable range from around 13 V to 16.95 V, and temperature tests show that the maximum variations of the output voltage at − 40 ∼ 80 ∘ C are less than 1.1%.

scholarly journals Performance enhancement analysis of an isolated DC-DC converter using fuzzy logic controller

2017 ◽  
Vol 7 (1.2) ◽  
pp. 186 ◽  
Author(s):  
S. Muthu Balaji ◽  
R. Anand ◽  
P. Senthil Pandian
Keyword(s):  
Fuzzy Logic ◽  
High Voltage ◽  
Output Voltage ◽  
Fuzzy Logic Controller ◽  
Performance Enhancement ◽  
Supply Voltage ◽  
Boost Converter ◽  
Open Loop ◽  
Voltage Gain ◽  
Power Application

High voltage gain dc-dc converters plays an major role in many modern industrialized applications like PV and fuel cells, electrical vehicles, dc backup systems (UPS, inverter), HID (high intensity discharge) lamps. As usual boost converter experiences a drawback of obtaining a high voltage at maximum duty cycle. Hence in order to increase the voltage gain of boost converter, this paper discusses about the advanced boost converter using solar power application. By using this technique, boost converter attains a high voltage which is ten times greater than the input supply voltage. The output voltage can be further increased to more than ten times the supply voltage by using a parallel capacitor and a coupled inductor. The voltage stress across the switch can be reduced due to high output voltage. The Converter is initially operated in open loop and then it is connected with closed loop. More over the fuzzy logic controller is used for the ripple reduction.

scholarly journals Topology, analysis, and CMOS implementation of switched-capacitor DC-DC converters

2014 ◽  
Vol 27 (1) ◽  
pp. 41-56 ◽  
Author(s):  
Oi-Ying Wong ◽  
Hei Wong ◽  
Wing-Shan Tam ◽  
Chi-Wah Kok
Keyword(s):  
Large Range ◽  
Supply Voltage ◽  
Charge Pump ◽  
Voltage Regulation ◽  
Voltage Fluctuations ◽  
Topology Analysis ◽  
Charge Pumps ◽  
New Methods ◽  
Dynamic Performances ◽  
Cmos Implementation

This review highlights various design and realization aspects of three commonly used charge pump topologies, namely, the linear, exponential, and the Fibonacci type of charge pumps. We shall outline the new methods developed recently for analyzing the steady and dynamic performances of these circuits. Some practical issues for the CMOS implementation of these charge pump structures will be critically discussed. Finally, some conventional voltage regulation methods for maintaining a stable output under a large range of loading current and supply voltage fluctuations will be proposed.

scholarly journals Negative High Voltage DC-DC Converter Using a New Cross-Coupled Structure

2015 ◽  
Vol 10 (3) ◽  
pp. 158-165
Author(s):  
Jun Zhao ◽  
Kyung Ki Kim ◽  
Yong-Bin Kim
Keyword(s):  
High Voltage ◽  
Power Supply ◽  
Power Efficiency ◽  
Current Problem ◽  
Negative Charge ◽  
Supply Voltage ◽  
Charge Pump ◽  
Complete Analysis ◽  
Voltage Gain ◽  
Variable Voltage

In this paper, a negative high voltage DC-DC converter using a new cross-coupled charge pump structure has been proposed, which can solve the shoot-through current problem of the conventional charge pump by using a four clock phase scheme. Also, by switching the power supply to each stage based on the supply voltage, a variable voltage gain can be obtained. A complete analysis of the interaction between the power efficiency, area, and frequency have been presented. The proposed negative charge pump is designed to deliver 40μA with a widesupply range from 2.5V to 5.5V using 0.18μm high voltage LDMOS technology.

scholarly journals Applications of Wireless Communication in a New Dual Branch CTS Charge Pump Based on Employing Clock Matched Technology

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Jiayang Li
Keyword(s):  
Charge Transfer ◽  
Wireless Communication ◽  
Power Efficiency ◽  
Output Voltage ◽  
Smart Cities ◽  
Charge Pump ◽  
High Energy ◽  
Current Drive ◽  
Drive Voltage ◽  
Charge Pumps

With the increase in communication requirements, new communication technologies and implementation methods have developed rapidly. The rise of emerging markets such as the Internet of Things, smart homes, smart cities, and wearables has promoted the development of wireless communication integrated circuits in the direction of monolithic, low energy consumption, and high energy efficiency. This paper proposes a new dual branch charge pump based on CTS charge pump with enhanced current drive capability and undesired charge transfer completely eliminated. Clock matched technology is proposed to completely eliminate undesired charge transfer caused by delay turn on and off of the auxiliary transistors in the traditional CTS charge pump. The current drive capability is enhanced by employing NMOS transistors with 2Vdd gate drive voltage, while traditional dual branch CTS charge pumps are based on PMOS with 1Vdd gate drive voltage. The output voltage ripple is also reduced resulting from a dual branch structure. Simulation results of output voltage gain and power efficiency for the proposed charge pump and other traditional charge pumps are provided. Comparisons are made to show the improvement of the proposed charge pump compared with other traditional charge pumps.

scholarly journals Review a Low Power CMOS Charge Pump using Power Gating Techniques to Reduce Leakage Power

2018 ◽  
Vol 7 (3.1) ◽  
pp. 27
Author(s):  
Vengadeswari N ◽  
Priscilla Whitin
Keyword(s):  
Supply Voltage ◽  
Charge Pump ◽  
Major Elements ◽  
Leakage Power ◽  
Power Gating ◽  
Charge Pumps ◽  
Pumping Efficiency ◽  
Low Power Cmos ◽  
Two Parameters ◽  
Charge Pump Circuit

In most case, charge pump circuit is designed based on capacitor, where voltage is increased at each stage depending on each stage voltage gain. Major elements are all charge pumps circuits one is Pumping capacitors and diode connected MOS.To increases pumping efficiency is very higher for each stage of charge pump circuits. Pumping efficiency are limiting by two parameters one is parasitic capacitance and threshold voltage. The power dissipated from the circuit can be increased by attain of leakage current .To resist this leakage in the circuits the supply voltage is major concern. To reduce the leakage with the help of power gating technique .Charge pump circuits are to be designed and verified by using tanner t-spice tools. 

scholarly journals A HIGH EFFICIENCY CHARGE PUMP FOR LOW VOLTAGE DEVICES

2014 ◽  
pp. 16-19
Author(s):  
AAMNA ANIL ◽  
RAVI KUMAR SHARMA
Keyword(s):  
High Efficiency ◽  
Low Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Charge Pumps ◽  
Nonvolatile Memories ◽  
A Charge ◽  
Low Supply Voltage ◽  
Capacitor Charge ◽  
Lower Voltage

A charge pump is a kind of DC to DC converter that uses capacitors as energy storage elements to create a higher or lower voltage power source. Charge pumps make use of switching devices for controlling the connection of voltage to the capacitor. Charge pumps have been used in the nonvolatile memories, such as EEPROM and Flash memories, for the programming of the floating-gate devices. They can also be used in the low-supply-voltage switched-capacitor systems that require high voltage to drive the analog switched. This paper includes voltage analysis of different charge pumps. On the basis of voltage analysis a new charge pump is proposed.

Analysis of High Voltage High Power Resonant Converters

2018 ◽  
Vol 9 (1) ◽  
pp. 174
Author(s):  
Bhuvaneswari C ◽  
R. Samuel Rajesh Babu
Keyword(s):  
Output Power ◽  
High Voltage ◽  
High Power ◽  
High Frequency ◽  
Output Voltage ◽  
Input Voltage ◽  
Resonant Converters ◽  
Very High Frequency ◽  
Very High

<p>Various Resonant Converters for high voltage and high power applications have been designed. Different Topologies of LLC, LCC, and CLL Resonant Converters have been simulated and compared for the same input voltage. The simulation was done at a very high frequency. The Output Power and the Efficiency of all the three Resonant Converters were calculated.With the results, it has been proved that LCC Resonant Converters were very much suited to give an output voltage of around 62 Kilovolts with a output power of 20 kilowatts.</p>

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