TiN Gate Work Function Control Using Nitrogen Gas Flow Ratio and RTA-Temperature

2007 ◽  
Author(s):  
Y. X. Liu ◽  
T. Hayashida ◽  
T. Matsukawa ◽  
K. Endo ◽  
M. Masahara ◽  
...  
Keyword(s):  
Work Function ◽  
Gas Flow ◽  
Flow Ratio ◽  
Nitrogen Gas ◽  
Gas Flow Ratio ◽  
Gate Work Function

Work Function Tuning of MoxSiyNz metal gate electrode for Advanced CMOS Technology

2008 ◽  
Vol 1073 ◽  
Author(s):  
Pommy Patel ◽  
Douglas A Buchanan ◽  
Robert M Wallace
Keyword(s):  
Work Function ◽  
Gas Flow ◽  
Nitrogen Concentration ◽  
Cmos Technology ◽  
Primary Objective ◽  
Steady Increase ◽  
Flow Ratio ◽  
Metal Gates ◽  
Work Function Tuning ◽  
Gas Flow Ratio

ABSTRACTDue to continued transistor scaling, the work function tuning of metal gates has become important for advanced CMOS applications. The primary objective of this research is to understand the tuning of the MoxSiyNz (also referred to as MoSiN) gate work function through the incorporation of nitrogen. A molybdenum silicide (MoSi2) target was reactively sputtered in nitrogen (N2) and argon (Ar) plasma. The amount of nitrogen in the MoSiN films was varied by controlling the gas flow ratio, RN = N2/(N2+Ar). Capacitance-voltage (CV) and internal photoemission (IPE) measurements are used to extract the work function (ϕm) of the MoSiN gate. A decrease in the MoSiN work function was observed from ∼4.7eV to ∼4.4eV for an increase in the gas flow ratios from 10% to 40%. The SIMS depth profiles suggested a uniform distribution of nitrogen throughout the films. The XPS surface analysis confirmed a steady increase in the total nitrogen concentration in the MoSiN films as gas flow ratio was increased. The increase in N2 concentration corresponded directly with the lowering of the MoSiN work function. These results clearly demonstrated that the MoSiN work function maybe altered over ∼0.3 eV tuning window by adjusting the N2 concentration in these films.

Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

2007 ◽  
Author(s):  
Yongxun Liu ◽  
Tetsuro Hayashida ◽  
Takashi Matsukawa ◽  
Kazuhiko Endo ◽  
Meishoku Masahara ◽  
...  
Keyword(s):  
Gas Flow ◽  
Flow Ratio ◽  
Metal Gate ◽  
Nitrogen Gas ◽  
Gas Flow Ratio ◽  
Tin Metal

scholarly journals Effect of Differentiated Injection Ratio, Gas Flow Rate, and Slag Thickness on Mixing Time and Open Eye Area in Gas-Stirred Ladle Assisted by Physical Modeling

Metals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 555 ◽  
Author(s):  
Luis E. Jardón-Pérez ◽  
Daniel R. González-Morales ◽  
Gerardo Trápaga ◽  
Carlos González-Rivera ◽  
Marco A. Ramírez-Argáez
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Mixing Time ◽  
Flow Ratio ◽  
Gas Flow Rate ◽  
Nsga Ii ◽  
Image Velocimetry ◽  
Gas Flow Ratio ◽  
Slag Thickness ◽  
Injection Ratio

In this work, the effects of equal (50%/50%) or differentiated (75%/25%) gas flow ratio, gas flow rate, and slag thickness on mixing time and open eye area were studied in a physical model of a gas stirred ladle with dual plugs separated by an angle of 180°. The effect of the variables under study was determined using a two-level factorial design. Particle image velocimetry (PIV) was used to establish, through the analysis of the flow patterns and turbulence kinetic energy contours, the effect of the studied variables on the hydrodynamics of the system. Results revealed that differentiated injection ratio significantly changes the flow structure and greatly influences the behavior of the system regarding mixing time and open eye area. The Pareto front of the optimized results on both mixing time and open eye area was obtained through a multi-objective optimization using a genetic algorithm (NSGA-II). The results are conclusive in that the ladle must be operated using differentiated flow ratio for optimal performance.

EFFECTS OF HYDROGEN GAS FLOW RATIO ON THE QUALITY OF NANO-DIAMOND FILMS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 876-880
Author(s):  
S. G. Wang ◽  
Q. Zhang ◽  
D. J. Yang ◽  
S. F. Yoon ◽  
J. Ahn ◽  
...  
Keyword(s):  
Grain Size ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gaseous Mixture ◽  
Hydrogen Gas ◽  
Chemical Vapor Deposition Method ◽  
Flow Ratio ◽  
Gas Flow Ratio

In this paper, we studied the effects of hydrogen gas flow ratio of [H2]/[N2 + CH4 + H2] on the quality of nanometer diamond (nano-diamond) films prepared by microwave plasma enhanced chemical vapor deposition method. Nano-diamond films were deposited on the silicon substrates from a gaseous mixture of nitrogen, methane and hydrogen. The experimental results show that if only using a gaseous mixture of nitrogen and methane, although we can obtain nano-diamond films with a grain size of about 5nm, the diamond films contain much non-diamond components. With hydrogen addition, and with increasing the hydrogen gas flow ratio from 1 to 10%, the non-diamond components in the films are significantly reduced and the grain size of the films increases from 5nm to 60nm. However optical transmittance of the films increases with increasing hydrogen gas flow ratio from 1 to 7% because of an improvement of film quality, and then decreases with further increasing hydrogen gas flow ratio owing to the increase of film roughness.

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