scholarly journals Estimation of Leakage Power and Delay in CMOS Circuits

2020 ◽  
Vol 4 (7) ◽  
pp. 14-19
Author(s):  
Mohasinul Huq N Md ◽  
Mohan Das S ◽  
Bilal N Md
Keyword(s):  
Power Dissipation ◽  
Supply Voltage ◽  
Full Adder ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Leakage Power ◽  
Nand Gate ◽  
High Threshold ◽  
Cmos Circuits ◽  
Low Leakage

This paper presents an estimation of leakage power and delay for 1-bit Full Adder (FA)designed which is based on Leakage Control Transistor (LCT) NAND gates as basic building block. The main objective is to design low leakage full adder circuit with the help of low and high threshold transistors. The simulations for the designed circuits performed in cadence virtuoso tool with 45 nm CMOS technology at a supply voltage of 0.9 Volts. Further, analysis of effect of parametric variation on leakage current and propagation delay in CMOS circuits is performed. The saving in leakage power dissipation for LCT NAND_HVT gate is up to 72.33% and 45.64% when compared to basic NAND and LCT NAND gate. Similarly for 1-bit full adder the saving is up to 90.9% and 40.08% when compared to basic NAND FA and LCT NAND.

scholarly journals Analysis On Power Gating Circuits Based Low Power VLSI Circuits (BCD Adder)

2021 ◽  
Vol 2089 (1) ◽  
pp. 012080
Author(s):  
M. Srinivas ◽  
K.V. Daya Sagar
Keyword(s):  
Energy Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Oxide Thickness ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Leakage Power ◽  
Vlsi Circuits ◽  
Battery Life

Abstract Currently, energy consumption in the digital circuit is a key design parameter for emerging mobile products. The principal cause of the power dissipation during idle mode is leakage currents, which are rising dramatically. Sub-threshold leakage is increased by the scaling of threshold voltage when gate current leakage increases because oxide thickness is scaled. With rising demands for mobile devices, leakage energy consumption has received even greater attention. Since a mobile device spends most of its time in standby mode, leakage power savings need to prolong the battery life. That is why low power has become a significant factor in CMOS circuit design. The required design and simulation of an AND gate with the BSIM4 MOS parameter model at 27 0C, supply voltage of 0,70V with CMOS technology of 65nm are the validation of the suitability of the proposed circuit technology. AND simulation. The performance parameters for the two AND input gate are compared with the current MTCMOS and SCCMOS techniques, such as sub-threshold leakage power dissipations in active and standby modes, the dynamic dissipation, and propagation period. The proposed hybrid super cutoff complete stack technique compared to the current MTCMOS technology shows a reduction in sub-threshold dissipation power dissipation by 3. 50x and 1.15x in standby modes and active modes respectively. The hybrid surface-cutting technique also shows savings of 2,50 and 1,04 in power dissipation at the sub-threshold in standby modes and active modes compared with the existing SCCMOS Technique.

scholarly journals Design and Performasnce Analysis of Hybrid Full Adder Using Finfet 40nm Technology

2019 ◽  
Vol 8 (6) ◽  
pp. 4521-4525
Keyword(s):  
Performance Analysis ◽  
Energy Efficient ◽  
Full Adder ◽  
Propagation Delay ◽  
Leakage Power ◽  
Drive Current ◽  
Internal Logic ◽  
Low Leakage ◽  
Cadence Tool ◽  
Power And Energy

Designing a low power and energy efficient circuits in FinFET technology is of great Challenge. This paper presents the internal logic structure and circuit operation using the devices, CMOS and FinFETs for designing the hybrid adder cells. At transistor level, CMOS and FinFET based hybrid full adder (HFA) and improved hybrid full adder (IHFA) is designed. Simulations are carried out using the cadence tool in UMC 40nm and the performance analysis of these HFA and IHFA are compared with the 40nm FinFET technology. It is observed that IHFA is better when compared with the HFA in terms of propagation delay, power consumption and energy delay product. IHFA achieves the higher drive current and low leakage power for better mobility and transistor scaling as compared with HFA.

CURRENT MODE CMOS QUATERNARY LOGIC FULL-ADDER

2009 ◽  
Vol 18 (01) ◽  
pp. 199-208 ◽  
Author(s):  
JEONG BEOM KIM
Keyword(s):  
Supply Voltage ◽  
Current Mode ◽  
Full Adder ◽  
Cmos Technology ◽  
Cmos Circuits ◽  
Cmos Circuit ◽  
Circuit Performance ◽  
Quaternary Logic ◽  
Binary Logic ◽  
Multiple Valued Logic

This paper proposes a quaternary-to-binary logic decoder, a quaternary current buffer, and a quaternary full-adder using current-mode multiple-valued logic (MVL) CMOS circuits. The proposed full-adder is superior to the previous MVL CMOS circuit in both the circuit occupied area and the performance. Comparing with the binary logic full-adder, the proposed full-adder is superior in the circuit occupied area. However, the circuit performance is inferior to the binary logic full-adder. The validity and effectiveness of the proposed circuits are verified through the HSPICE under Hynix 0.25 μm standard CMOS technology with the supply voltage 2.5 V.

scholarly journals Performance Analysis of Modified Drain Gating Techniques for Low Power and High Speed Arithmetic Circuits

VLSI Design ◽  
2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Shikha Panwar ◽  
Mayuresh Piske ◽  
Aatreya Vivek Madgula
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Room Temperature ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Cmos Circuits ◽  
Output Node ◽  
Critical Sections

This paper presents several high performance and low power techniques for CMOS circuits. In these design methodologies, drain gating technique and its variations are modified by adding an additional NMOS sleep transistor at the output node which helps in faster discharge and thereby providing higher speed. In order to achieve high performance, the proposed design techniques trade power for performance in the delay critical sections of the circuit. Intensive simulations are performed using Cadence Virtuoso in a 45 nm standard CMOS technology at room temperature with supply voltage of 1.2 V. Comparative analysis of the present circuits with standard CMOS circuits shows smaller propagation delay and lesser power consumption.

scholarly journals Leakage Reduction Methodology in CMOS for the Design of 1-Bit Full Adder

2021 ◽  
Vol 5 (1) ◽  
pp. 1-7
Author(s):  
S. MOHAN DAS ◽  
GANESH KUMAR M ◽  
BHASKARA RAO K
Keyword(s):  
High Speed ◽  
Supply Voltage ◽  
Logic Gates ◽  
Full Adder ◽  
Cmos Technology ◽  
Universal Logic ◽  
Significant Saving ◽  
Low Leakage ◽  
Low Threshold ◽  
The Cost

This paper presents low leakage and high speed 1-bit full adder projected with low threshold NMOS transistors in associations with universal logic gates which leads to have reduced power and delay. The customized NAND and NOR gates, a necessary blocks, are presented to design a proposed adder cell. The simulations for the designed circuits performed in cadence virtuoso tool with 65 nm CMOS technology at a supply voltage of 1 Volts. The proposed universal gates and 1-bit adder cell is compared with conventional NAND/NOR gates and 1-bit adder. The proposed adder schemes with modified universal logic gates achieve significant saving in terms of delay which are more than 24% and which is at the cost of 5% when compared with conventional designs.

An Energy Efficient Logic Approach to Implement CMOS Full Adder

2017 ◽  
Vol 26 (05) ◽  
pp. 1750084 ◽  
Author(s):  
Pankaj Kumar ◽  
Rajender Kumar Sharma
Keyword(s):  
Energy Efficient ◽  
High Speed ◽  
Supply Voltage ◽  
Signal Integrity ◽  
Full Adder ◽  
Cmos Technology ◽  
Nand Gate ◽  
Common Environment ◽  
Logic Approach ◽  
Power Delay Product

An energy efficient internal logic approach for designing two 1-bit full adder cells is proposed in this work. It is based on decomposition of the full adder logic into the smaller modules. Low power, high speed and smaller area are the main features of the proposed approach. A modified power aware NAND gate, an essential entity, is also presented. The proposed full adder cells achieve 30.13% and improvement in their power delay product (PDP) metrics when compared with the best reported full adder design. Some of the popular adders and proposed adders are designed with cadence virtuoso tool with UMC 90[Formula: see text]nm technology operating at 1.2[Formula: see text]V supply voltage and UMC 55[Formula: see text]nm CMOS technology operating at 1.0[Formula: see text]V. These designs are tested on a common environment. During the experiment, it is also found that the proposed adder cells exhibit excellent signal integrity and driving capability when operated at low voltages.

POWER REDUCTION TECHNIQUE USING MULTIPLE SUPPLY VOLTAGE AND SWITCHING ACTIVITY ANALYSIS

2013 ◽  
Vol 22 (02) ◽  
pp. 1250079
Author(s):  
BASHAR HADDAD ◽  
AMIN JARRAH
Keyword(s):  
Power Dissipation ◽  
Supply Voltage ◽  
Critical Path ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Activity Analysis ◽  
Vlsi Circuits ◽  
Total Power ◽  
Switching Activity ◽  
Activity Factor

Recent demand for low power VLSI circuits has been pushing the development of innovative approaches to reduce power dissipation. Supply voltage (V CC ) and switching activity factor (α) are main sources of dynamic power dissipation in CMOS technology. Furthermore, the power dissipation increases exponentially by the value of supply voltage. New approach based on switching activity analysis and multiple supply voltage is implemented successfully in logical circuits, taking in mind the critical path(s) of the design and switching activity factor of each element in the design. High supply voltage is applied on elements on the critical path(s). Elements off the critical path(s) are classified into categories according to their switching activity factors. The total power dissipation is reduced, while the propagation delay remains without any increase. The proposed approach combines the concepts of critical/non-critical paths and switching activity analysis to assign different V CCs to different elements.

scholarly journals OPTIMAL DESIGN FOR GROUND BOUNCE NOISE REDUCTION USING SLEEP TRANSISTOR

2012 ◽  
pp. 110-116
Author(s):  
P. Sreenivasulu ◽  
Vasavi Prasanthi Dasari
Keyword(s):  
Noise Immunity ◽  
Supply Voltage ◽  
Full Adder ◽  
Cmos Technology ◽  
Threshold Current ◽  
Active Power ◽  
Leakage Power ◽  
Analysis And Design ◽  
Complex Arithmetic ◽  
Ground Bounce

As technology scales into the nanometer regime ground bounce noise and noise immunity are becoming important metric of comparable importance to leakage current, active power, delay and area for the analysis and design of complex arithmetic logic circuits. In this paper, low leakage 1bit full adder cells are proposed for mobile applications with low ground bounce noise and a novel technique has been introduced with improved staggered phase damping technique for further reduction in the peak of ground bounce noise. Noise immunity has been carefully considered since the significant threshold current of the low threshold voltage transition becomes more susceptible to noise. We introduced a new transistor resizing approach for 1bit full adder cells to determine the optimal sleep transistor size which reduce the leakage power and ground bounce noise. The simulation results depicts that the proposed design also leads to efficient 1bit full adder cells in terms of standby leakage power, active power, ground bounce noise and noise margin. We have performed simulations using Cadence Spectre 90nm standard CMOS technology at room temperature with supply voltage of 1V.

scholarly journals Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1718
Author(s):  
Neha Gupta ◽  
Ambika Prasad Shah ◽  
Sajid Khan ◽  
Santosh Kumar Vishvakarma ◽  
Michael Waltl ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Supply Voltage ◽  
Leakage Power ◽  
Functional Improvement ◽  
Scaling Technique ◽  
Iot Applications ◽  
Sram Cell ◽  
Improved Stability ◽  
Supply Voltage Scaling ◽  
Power Delay Product

This paper proposes an error-tolerant reconfigurable VDD (R-VDD) scaled SRAM architecture, which significantly reduces the read and hold power using the supply voltage scaling technique. The data-dependent low-power 10T (D2LP10T) SRAM cell is used for the R-VDD scaled architecture with the improved stability and lower power consumption. The R-VDD scaled SRAM architecture is developed to avoid unessential read and hold power using VDD scaling. In this work, the cells are implemented and analyzed considering a technologically relevant 65 nm CMOS node. We analyze the failure probability during read, write, and hold mode, which shows that the proposed D2LP10T cell exhibits the lowest failure rate compared to other existing cells. Furthermore, the D2LP10T cell design offers 1.66×, 4.0×, and 1.15× higher write, read, and hold stability, respectively, as compared to the 6T cell. Moreover, leakage power, write power-delay-product (PDP), and read PDP has been reduced by 89.96%, 80.52%, and 59.80%, respectively, compared to the 6T SRAM cell at 0.4 V supply voltage. The functional improvement becomes even more apparent when the quality factor (QF) is evaluated, which is 458× higher for the proposed design than the 6T SRAM cell at 0.4 V supply voltage. A significant improvement of power dissipation, i.e., 46.07% and 74.55%, can also be observed for the R-VDD scaled architecture compared to the conventional array for the respective read and hold operation at 0.4 V supply voltage.

A new approach to bypass wire crossing problem in QCA nano technology

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ali Majeed ◽  
Esam Alkaldy
Keyword(s):  
Power Dissipation ◽  
Single Layer ◽  
Complementary Metal Oxide Semiconductor ◽  
Full Adder ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Nano Technology ◽  
New Approach ◽  
Content Type ◽  
Wire Crossing

Purpose This study aims to replace current multi-layer and coplanar wire crossing methods in QCA technology to avoid fabrication difficulties caused by them. Design/methodology/approach Quantum-dot cellular automata (QCA) is one of the newly emerging nanoelectronics technology tools that is proposed as a good replacement for complementary metal oxide semiconductor (CMOS) technology. This technology has many challenges, among them being component interconnection and signal routing. This paper will propose a new wire crossing method to enhance layout use in a single layer. The presented method depends on the central cell clock phase to enable two signals to cross over without interference. QCADesigner software is used to simulate a full adder circuit designed with the proposed wire crossing method to be used as a benchmark for further analysis of the presented wire crossing approach. QCAPro software is used for power dissipation analysis of the proposed adder. Findings A new cost function is presented in this paper to draw attention to the fabrication difficulties of the technology when designing QCA circuits. This function is applied to the selected benchmark circuit, and the results show good performance of the proposed method compared to others. The improvement is around 59, 33 and 75% compared to the best reported multi-layer wire crossing, coplanar wire crossing and logical crossing, respectively. The power dissipation analysis shows that the proposed method does not cause any extra power consumption in the circuit. Originality/value In this paper, a new approach is developed to bypass the wire crossing problem in the QCA technique.

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