MODELING OF DEEP-SUBMICRON MOSFET DRIVE CURRENT

2005 ◽  
Vol 04 (04) ◽  
pp. 525-536
Author(s):  
BENISTANT FRANCIS

With already published MOSFET transistors of 25 nm gate length, the limit of the available current is a critical issue which must be clarified in order to guide the optimization of the transistor architecture. Leburton and Dorda1 showed that the limitation of the drain current comes from the saturation of the electric field at the source, and not from the saturation of the carrier velocity. More recently, Lundstrom2 compared the actual performance of the deep-sub-micron devices with their ballistic limit, and showed that the back-scattering at the source end of the channel is responsible for the limitation of the drain current. In both studies, the electric field, at the source end of the channel, plays a key part on the performances of the transistor. In this paper, we will review quantitatively this limitation, and, in addition, we are going to give a clear link between the drain current equations given by Lundstorm and the usual classical ones. Finally, we will examine the impact of the overshoot velocity on the transistor behavior.

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 538
Author(s):  
Farhad Larki ◽  
Md Shabiul Islam ◽  
Arash Dehzangi ◽  
Mohammad Tariqul Islam ◽  
Hin Yong Wong

In this paper, we investigate the effect of lateral gate design on performance of a p-type double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of lateral gate length, which modifies the real channel length of the device and gate gap variation down to 50 nm which have been found to be the most influential factors in the performance of the device have been comprehensively investigated. The characteristics are demonstrated and compared with a nominal DGJLTs through three-dimensional technology computer-aided design (TCAD) simulation. At constant channel geometry (thickness and width), when the lateral gate length decreases, the results show constant flatband drain current characteristics while the OFF state current (IOFF) increases significantly. On the other hand, by decreasing the air gap the subthreshold current considerably decreases while the flatband current is constant. Moreover, at a certain gate gap, the gates lose control over the channel and the device simply works as a resistor. Electric field component, carriers’ density, band edge energies, and recombination rate of the carriers inside the channel in depletion and accumulation regimes are analysed to interpret the variation of output characteristics.


2020 ◽  
Vol 15 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Walter Gonçalez Filho ◽  
João Antonio Martino ◽  
Paula Ghedini Der Agopian

This work addresses the impact of different device parameters on the analog characteristics of Line-Tunneling Field Effect Transistors (Line-TFETs). Source-to-drain separation, pocket thickness, pocket doping, gate-source alignment and the gate length are varied in order to evaluate their impact on the conduction mechanisms and on the overall transfer characteristics of the device. The variation of the main parameters responsible for device variability (pocket thickness and doping and gate-source alignment) is performed in order to analyze their impact on current mirrors, revealing that gate-source overlap improves the analog characteristics of the Line-TFET and that pocket doping should be limited to values smaller than 1018cm-3. Even though the drain current and the transconductance (gm) of this device are proportional to the gate area, simulations compared to experimental data show that the output conductance (gd) of Line-TFETs is practically independent of the gate length. The conduction mechanisms were analyzed through numerical simulations, revealing that this unique characteristic is due to source-to-drain tunneling, which defines the average value of gd on the saturation-like region and does not depend upon the gate length. The impact of this characteristic on analog circuit design is illustrated considering the example of a common-source stage and comparing its design when using MOSFET devices. This example reveals that the designer may choose whether to increase gm or gd in order to increase the circuit gain when using Line-TFETs, fundamentally differing from the MOSFET design.  


1991 ◽  
Vol 240 ◽  
Author(s):  
David R. Greenberg ◽  
Jesús A. Del Alamo

ABSTRACTThe extrinsic device is known to degrade the performance of heterostructure field-effect transistors (HFET's) through the introduction of a parasitic source resistance (Rs). To date, however, there has been no recognition of the fact that carrier velocity saturation (vsat) can occur in both the extrinsic source and drain, setting the ultimate limit on maximum drain current (I,D,max) and on the useful VGS swing in HFET's. In this study, we demonstrate the mechanisms through which vsat in the extrinsic device limits device performance, using AlGaAs/n+-InGaAs Metal-Insulator-Doped-channel FET's (MIDFET's) as a vehicle. These devices show that gm falls at a lower VGSthan does fT, by as much as 1 V. This reveals that there are two mechanisms at work. The approach of vsat in the extrinsic source first causes the small-signal source resistance (Ts)to rise rapidly, leading gm to decline but leaving fT unaffected. As the carrier velocity in the extrinsic device approaches Vsat more closely, there is an actual decline of the carrier velocity in the intrinsic device. This process degrades velocity-related figures of merit such as and fT.


Author(s):  
Keivan Etessam-Yazdani ◽  
Rozana Hussin ◽  
Mehdi Asheghi

In this manuscript, the impact of scaling on self-heating of silicon-on-insulator (SOI) transistors is investigated. Effect of temperature dependent phonon-boundary scattering in silicon thin films, which results in reduction in thermal conduction in the channel region, is incorporated into a electro-thermal simulation tool. Results of DC electro-thermal simulations are used to study drain current degradation due to self-heating and to obtain the thermal resistance of SOI devices as a function of gate length and silicon layer thickness. The device thermal resistance is increased by nearly a factor of 3 due to the scaling of gate length from 180nm to 10nm. Self-heating in SOI devices with gate length of 10nm can be responsible for up to 30% reduction in the saturation current and neglecting phonon-boundary scattering in the channel region may underestimate the degradation of drain current due to self-heating by nearly a factor of two.


2020 ◽  
Vol 20 (11) ◽  
pp. 6912-6915
Author(s):  
Sang-Kon Kim

The line-edge roughness (LER) is a critical issue that significantly impacts the critical dimension (CD) because the LER does not scale with the feature size. Hence, the LER influences the device performance with 7-nm and 5-nm patterns. In this study, LER impact on the performance of the fin-field-effect-transistors (FinFETs) are investigated using a compact device method. The fin-width roughness (FWR) is based on the stochastic fluctuation such as the LER and the line-width roughness (LWR) in the lithography process. The calculated results of the FWRs and the gate lengths L = 7-nm and 5-nm are addressed with the cases of electric potentials with the y-direction along the gate length, electric potentials with the x-direction along the fin width, and the absolute drain currents with the gate lengths L = 7-nm or 5-nm due to gate voltages. According to the gate length, the impact of the FWR patterns on the performance of fin-field-effect-transistors (FinFETs) can find regular fluctuations.


Author(s):  
Yoav Weizman ◽  
Ezra Baruch

Abstract In recent years, two new techniques were introduced for flip chip debug; the Laser Voltage Probing (LVP) technique and Time Resolved Light Emission Microscopy (TRLEM). Both techniques utilize the silicon’s relative transparency to wavelengths longer than the band gap. This inherent wavelength limitation, together with the shrinking dimensions of modern CMOS devices, limit the capabilities of these tools. It is known that the optical resolution limits of the LVP and TRLEM techniques are bounded by the diffraction limit which is ~1um for both tools using standard optics. This limitation was reduced with the addition of immersion lens optics. Nevertheless, even with this improvement, shrinking transistor geometry is leading to increased acquisition time, and the overlapping effect between adjacent nodes remains a critical issue. The resolution limit is an order of magnitude above the device feature densities in the < 90nm era. The scaling down of transistor geometry is leading to the inevitable consequence where more than 50% of the transistors in 90nm process have widths smaller than 0.4um. The acquisition time of such nodes becomes unreasonably long. In order to examine nodes in a dense logic cuicuit, cross talk and convolution effects between neighboring signals also need to be considered. In this paper we will demonstrate the impact that these effects may have on modern design. In order to maintain the debug capability, with the currently available analytical tools for future technologies, conceptual modification of the FA process is required. This process should start on the IC design board where the VLSI designer should be familiar with FA constraints, and thus apply features that will enable enhanced FA capabilities to the circuit in hand during the electrical design or during the physical design stages. The necessity for reliable failure analysis in real-time should dictate that the designer of advanced VLSI blocks incorporates failure analysis constraints among other design rules. The purpose of this research is to supply the scientific basis for the optimal incorporation of design rules for optical probing in the < 90nm gate era. Circuit designers are usually familiar with the nodes in the design which are critical for debug, and the type of measurement (logic or DC level) they require. The designer should enable the measurement of these signals by applying certain circuit and physical constraints. The implementation of these constraints may be done at the cell level, the block level or during the integration. We will discuss the solutions, which should be considered in order to mitigate tool limitations, and also to enable their use for next generation processes.


Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 64 ◽  
Author(s):  
Qin Wang ◽  
Hui Xie ◽  
Zhiming Hu ◽  
Chao Liu

In this study, molecular dynamics simulations were carried out to study the coupling effect of electric field strength and surface wettability on the condensation process of water vapor. Our results show that an electric field can rotate water molecules upward and restrict condensation. Formed clusters are stretched to become columns above the threshold strength of the field, causing the condensation rate to drop quickly. The enhancement of surface attraction force boosts the rearrangement of water molecules adjacent to the surface and exaggerates the threshold value for shape transformation. In addition, the contact area between clusters and the surface increases with increasing amounts of surface attraction force, which raises the condensation efficiency. Thus, the condensation rate of water vapor on a surface under an electric field is determined by competition between intermolecular forces from the electric field and the surface.


Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 750
Author(s):  
Jixing Sun ◽  
Sibo Song ◽  
Xiyu Li ◽  
Yunlong Lv ◽  
Jiayi Ren ◽  
...  

A conductive metallic particle in a gas-insulated metal-enclosed system can charge through conduction or induction and move between electrodes or on insulating surfaces, which may lead to breakdown and flashover. The charge on the metallic particle and the charging time vary depending on the spatial electric field intensity, the particle shape, and the electrode surface coating. The charged metallic particle can move between the electrodes under the influence of the spatial electric field, and it can discharge and become electrically conductive when colliding with the electrodes, thus changing its charge. This process and its factors are mainly affected by the coating condition of the colliding electrode. In addition, the interface characteristics affect the particle when it is near the insulator. The charge transition process also changes due to the electric field strength and the particle charging state. This paper explores the impact of the coating material on particle charging characteristics, movement, and discharge. Particle charging, movement, and charge transfer in DC, AC, and superimposed electric fields are summarized. Furthermore, the effects of conductive particles on discharge characteristics are compared between coated and bare electrodes. The reviewed studies demonstrate that the coating can effectively reduce particle charge and thus the probability of discharge. The presented research results can provide theoretical support and data for studying charge transfer theory and design optimization in a gas-insulated system.


2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.


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