LEAKAGE POWER REDUCTION IN SRAM AT NANOSCALE

2011 ◽  
Vol 10 (04n05) ◽  
pp. 755-759
Author(s):  
K. SUNIL KUMAR
Keyword(s):  
Supply Voltage ◽  
Channel Length ◽  
Gate Leakage ◽  
Leakage Currents ◽  
Voltage Level ◽  
Node Potential ◽  
Sram Cell ◽  
Effective Voltage ◽  
The One ◽  
The Impact

In this work the impact of gate leakage on SRAM is described and two approaches for reducing gate leakage currents are examined in detail. In one approach, the supply voltage is reduced while in the other the potential of the ground node is raised. In both the approaches the effective voltage across SRAM cell is reduced in inactive mode using a dynamic self-controllable switch. Simulation results based on BPTM (Berkeley Predictive Technology Model) for 45 nm channel length device show that the scheme in which supply voltage level is reduced is more efficient in reducing gate leakage than the one in which ground node potential is raised. Results obtained show that 96% reduction in the leakage currents of SRAM can be achieved.

scholarly journals Channel Length Biasing for Improving Read Margin of the 8T SRAM at Near Threshold Operation

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 611 ◽  
Author(s):  
Ik Joon Chang ◽  
Yesung Kang ◽  
Youngmin Kim
Keyword(s):  
Threshold Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Channel Length ◽  
Voltage Level ◽  
Exact Data ◽  
Optimum Energy ◽  
The Stability ◽  
20 Nm ◽  
Near Threshold

Reducing a supply voltage in order to minimize power consumption in memory is a major design consideration in this field of study. In static random access memory (SRAM), optimum energy can be achieved by reducing the voltage near the threshold voltage level for near threshold voltage computing (NTC). However, lowering the operational voltage drastically degrades the stability of SRAM. Thus, in conventional 6T SRAM, it is almost impossible to read exact data, even when a small process variation occurs. To address this problem, an 8T SRAM structure is proposed which can be widely used for improving the read stability at lower voltage operation. In this paper, we investigate the channel length biasing effect on the read access transistor of the 8T SRAM in NTC and compare this with 6T SRAM. Read stability can be improved by suppressing the leakage current due to the longer channel length. Simulation results show that, in NTC, up to a 12× read-error reduction can be achieved by the 20 nm channel length biasing in the 8T SRAM compared to 6T SRAM.

scholarly journals Comprehensive Analysis of SRAM Cell Architectures With 18nm FinFET for Low Power Applications

2021 ◽  
Author(s):  
T. Santosh Kumar ◽  
Suman Lata Tripathi
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Reduction Technique ◽  
Leakage Currents ◽  
Leakage Reduction ◽  
Sram Cell ◽  
Supply Voltage Scaling ◽  
Better Than

Abstract The SRAM cells are used in many applications where power consumption will be the main constraint. The Conventional 6T SRAM cell has reduced stability and more power consumption when technology is scaled resulting in supply voltage scaling, so other alternative SRAM cells from 7T to 12T have been proposed which can address these problems. Here a low power 7T SRAM cell is suggested which has low power consumption and condensed leakage currents and power dissipation. The projected design has a leakage power of 5.31nW and leakage current of 7.58nA which is 84.9% less than the 7T SRAM cell without using the proposed leakage reduction technique and it is 22.4% better than 6T SRAM and 22.1% better than 8T SRAM cell when both use the same leakage reduction technique. The cell area of the 7T SRAM cell is 1.25µM2, 6T SRAM is 1.079µM2 and that of 8T SRAM is 1.28µM2all the results are simulated in cadence virtuoso using 18nm technology.

scholarly journals A new circuit technique for reduced leakage current in Deep Submicron CMOS technologies

2005 ◽  
Vol 3 ◽  
pp. 355-358
Author(s):  
A. Schmitz ◽  
R. Tielert
Keyword(s):  
Supply Voltage ◽  
Logic Gate ◽  
Deep Submicron ◽  
Soft Error ◽  
Sleep Mode ◽  
Leakage Currents ◽  
Low Leakage ◽  
Sram Cell ◽  
Local Supply ◽  
Standby Mode

Abstract. Modern CMOS processes in the Deep Submicron regime are restricted to supply voltages below 2 volts and further to account for the transistors' field strength limitations and to reduce the power per logic gate. To maintain the high switching performance, the threshold voltage must be scaled according with the supply voltage. However, this leads to an increased subthreshold current of the transistors in standby mode (VGS=0). Another source of leakage is gate current, which becomes significant for gate oxides of 3nm and below. We propose a Self-Biasing Virtual Rails (SBVR) - CMOS technique which acts like an adaptive local supply voltage in case of standby mode. Most important sources of leakage currents are reduced by this technique. Moreover, SBVR-CMOS is capable of conserving stored information in sleep mode, which is vital for memory circuits. Memories are exposed to radiation causing soft errors. This well-known problem becomes even worse in standby mode of typical SRAMs, that have low driving performance to withstand alpha particle hits. In this paper, a 16-transistor SRAM cell is proposed, which combines the advantage of extremely low leakage currents with a very high soft error stability.

scholarly journals Parameters for Stability of Reconfigurable Memory and 6T SRAM Cell

2019 ◽  
Vol 8 (9S) ◽  
pp. 887-892
Keyword(s):  
Supply Voltage ◽  
Memory Cell ◽  
Channel Length ◽  
Vital Role ◽  
Data Retention ◽  
Future Technology ◽  
Noise Margin ◽  
Sram Cell ◽  
Simulation Purpose ◽  
Reconfigurable Memory

As the technology is improving, channel length of MOSFET is scaling down. In this environment stability of SRAM becomes the major concern for future technology. Static noise margin (SNM) plays a vital role in stability of SRAM. This paper gives an introduction to the reconfigurable memory and 6T SRAM cell. It includes the implementation, characterization and analysis of reconfigurable memory cell and its comparison with the conventional 6T SRAM cell for various parameters like read margin, write margin, data retention voltage, temperature and power supply fluctuations and depending upon these analysis we find SNM for 6T and 8T SRAM cell. The tool used for simulation purpose is IC Station by Mentor Graphics using 350nm technology at supply voltage of 2.5volts.

Effects of Inversion Layer Quantization and Polysilicon Gate Depletion on Tunneling Current of Ultra-Thin SiO2 Gate Material

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Saha ◽  
G. Srinivasan ◽  
G. A. Rezvani ◽  
M. Farr
Keyword(s):  
Leakage Current ◽  
Supply Voltage ◽  
Inversion Layer ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Polysilicon Gate ◽  
Gate Oxide Thickness ◽  
The Impact

ABSTRACTWe have investigated the impact of inversion layer quantization and polysilicon-gate depletion effects on the direct-tunneling gate-leakage current and reliability of ultra-thin silicon-dioxide gate dielectric. The gate-leakage current was measured for nMOSFET devices with gate oxide thickness down to 3 nm. A simulation-based methodology was used to determine the physical oxide thickness from the measured capacitance data, and the corresponding effective gate oxide thickness at inversion was computed from the simulation data obtained with and without the quantum mechanical and polysilicon depletion effects. The simulation results indicate that the effective gate oxide thickness is significantly higher than the physically grown oxide thickness due to inversion layer quantization and polysilicon depletion effects. The increase in oxide thickness is strongly dependent on the supply voltage and is more than 0.6 nm at 1 V. Our data, also, show that in order to maintain a leakage current ≥ 1 A/cm2 for 1 V operation, the effective gate oxide thickness must be ≥ 2.2 nm.

Dependence of Current Harmonics of Greenhouse Irradiators on Supply Voltage

2020 ◽  
pp. 85-88 ◽  
Author(s):  
Nadezhda P. Kondratieva
Keyword(s):  
Mathematical Models ◽  
Supply Voltage ◽  
Harmonic Distortion ◽  
Feasibility Studies ◽  
Power Losses ◽  
Voltage Level ◽  
Supply Networks ◽  
Current Harmonics ◽  
Cable Lines ◽  
Harmonic Composition

The article describes the results of the study concerning the effect of the voltage level on current harmonic composition in greenhouses irradiators. It is found that its change affects the level of current harmonics of all types of the studied greenhouse irradiators. With decrease of nominal supply voltage by 10 %, the total harmonic distortion THDi decreases by 9 % for emitters equipped with high pressure sodium lamps (HPSL), by 10 % for emitters with electrode-less lamps and by 3 % for LED based emitters. With increase of nominal supply voltage by 10 %, THDi increases by 23 % for lighting devices equipped with HPSL, by 10 % for irradiators with electrode-less lamps and by 3 % for LED based emitters. Therefore, changes of supply voltage cause the least effect on the level of current harmonics of LED based emitters and then the emitters with electrode-less lamps. Change of the level of supply voltage causes the greatest effect on the level of current harmonics of HPSL based irradiators. Mathematical models of dependence of THDi on the level of supply voltage for greenhouse emitters equipped with LED, electrode-less lamps and HPSL lamps were formulated. These mathematical models may be used for calculations of total current when selecting transformers and supply cable lines for greenhouse lighting devices, for design of new or reconstruction of existing irradiation systems of greenhouse facilities, and for calculation of power losses in power supply networks of greenhouse facilities during feasibility studies for energy saving and energy efficiency increasing projects.

Static and Dynamic Studies of Gasoline in View of its Octane Number and its Toxic Effect

2013 ◽  
Vol 12 (7) ◽  
pp. 451-459
Author(s):  
Ashraf Yehia El-Naggar ◽  
Mohamed A. Ebiad
Keyword(s):  
Toxic Effect ◽  
Aromatic Hydrocarbons ◽  
Octane Number ◽  
Liquid Fuel ◽  
Positive Impact ◽  
Hydrocarbon Composition ◽  
Different Temperatures ◽  
Different Seasons ◽  
The One ◽  
The Impact

Gasoline come primarily from petroleum cuts, it is the preferred liquid fuel in our lives. Two gasoline samples of octane numbers 91 and 95 from Saudi Arabia petrol stations were studied. This study was achieved at three different temperatures 20oC, 30oC and 50oC representing the change in temperatures of the different seasons of the year. Both the evaporated gases of light aromatic hydrocarbons (BTEX) of gasoline samples inside the tank were subjected to analyze qualitatively and quantitatively via capillary gas chromatography. The detailed hydrocarbon composition and the octane number of the studied gasoline samples were determined using detailed hydrocarbon analyzer. The idea of research is indicating the impact of light aromatic compounds in gasoline on the toxic effect of human and environment on the one hand, and on octane number of gasoline on the other hand. Although the value of octane number will be reduced but this will have a positive impact on the environment as a way to produce clean fuel.

The Development of Agritourism in the Podkarpackie Voivodeship in the Light of International and National Conditions

2017 ◽  
Vol 13 ◽  
pp. 244-261
Author(s):  
Mariola Tracz ◽  
Małgorzata Bajgier-Kowalska ◽  
Radosław Uliszak
Keyword(s):  
Development Strategy ◽  
Current State ◽  
Central Statistical ◽  
Central Statistical Office ◽  
Tourism Resources ◽  
The One ◽  
The Impact ◽  
District Offices ◽  
Socio Economic Factors

Podkarpackie Voivodeship is one of the regions of Poland in which the number of agritourism entities is very high. Therefore tourism plays a significant role in its development strategy. The aim of the paper is to identify the current state of agritourism and the changes that have occurred in the region in the years 2000–2016. Specific objectives are to determine the distribution of agritourism farms and their offer, together with a comprehensive analysis of the environmental and socio-economic factors, as well as the impact of the Slovak-Ukrainian border. The report was developed on the statistical materials from the Polish Central Statistical Office, Podkarpackie Agricultural Advisory Centre in Boguchwała and data collected from municipalities and district offices that is published on their websites, as well as through interviews with 100 owners of agritourism farms in the Podkarpackie Voivodeship. The research has shown, on the one hand, the decline in the number of farms in the region and, on the other hand, the increase in the diversity of the tourist offer of these entities. Distribution of agritourism farms is closely linked to the attractiveness of natural environment and quality of secondary tourism resources. Traditional agritourism has not yet fully used its countryside, as well as cross-border advantages of its location.

Laughter on the Fringes

2019 ◽  
Author(s):  
Anna Peterson
Keyword(s):  
The Other ◽  
Literary Canon ◽  
Autobiographical Writing ◽  
Treasure Trove ◽  
Old Comedy ◽  
Other Hand ◽  
Aggressive Humor ◽  
The One ◽  
The Individual ◽  
The Impact

This book examines the impact that Athenian Old Comedy had on Greek writers of the Imperial era. It is generally acknowledged that Imperial-era Greeks responded to Athenian Old Comedy in one of two ways: either as a treasure trove of Atticisms, or as a genre defined by and repudiated for its aggressive humor. Worthy of further consideration, however, is how both approaches, and particularly the latter one that relegated Old Comedy to the fringes of the literary canon, led authors to engage with the ironic and self-reflexive humor of Aristophanes, Eupolis, and Cratinus. Authors ranging from serious moralizers (Plutarch and Aelius Aristides) to comic writers in their own right (Lucian, Alciphron), to other figures not often associated with Old Comedy (Libanius) adopted aspects of the genre to negotiate power struggles, facilitate literary and sophistic rivalries, and provide a model for autobiographical writing. To varying degrees, these writers wove recognizable features of the genre (e.g., the parabasis, its agonistic language, the stage biographies of the individual poets) into their writings. The image of Old Comedy that emerges from this time is that of a genre in transition. It was, on the one hand, with the exception of Aristophanes’s extant plays, on the verge of being almost completely lost; on the other hand, its reputation and several of its most characteristic elements were being renegotiated and reinvented.

Freedom of Expression versus Privacy and the Right to Reputation

2017 ◽  
Author(s):  
Dirk Voorhoof
Keyword(s):  
Public Interest ◽  
Freedom Of Expression ◽  
Media Freedom ◽  
Investigative Journalism ◽  
The Public ◽  
The Right Of Privacy ◽  
The One ◽  
Grand Chamber ◽  
The Right ◽  
The Impact

The normative perspective of this chapter is how to guarantee respect for the fundamental values of freedom of expression and journalistic reporting on matters of public interest in cases where a (public) person claims protection of his or her right to reputation. First it explains why there is an increasing number and expanding potential of conflicts between the right to freedom of expression and media freedom (Article 10 ECHR), on the one hand, and the right of privacy and the right to protection of reputation (Article 8 ECHR), on the other. In addressing and analysing the European Court’s balancing approach in this domain, the characteristics and the impact of the seminal 2012 Grand Chamber judgment in Axel Springer AG v. Germany (no. 1) are identified and explained. On the basis of the analysis of the Court’s subsequent jurisprudence in defamation cases it evaluates whether this case law preserves the public watchdog-function of media, investigative journalism and NGOs reporting on matters of public interest, but tarnishing the reputation of public figures.

Sign in / Sign up

Export Citation Format

Share Document