Improved Evaluation Method for Channel Mobility in SiC Trench MOSFETs
2015 ◽
Vol 821-823
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pp. 757-760
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Keyword(s):
We proposed an improved method for evaluating the effective channel mobility (μeff), involving an appropriate definition of the threshold voltage (Vth) based on the ideal gate bias voltage – drain current (VG-ID) characteristics. Using this method, the dependence of μeff on the effective field (Eeff) could be evaluated even for SiC trench MOSFETs with large interface state density (Dit) values. The dominant influence on μeff in the low Eeff region was found to be Coulomb scattering caused by interface states at the SiC/SiO2 interfaces.
Keyword(s):
Keyword(s):
2015 ◽
Vol 15
(10)
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pp. 7551-7554
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2006 ◽
Vol 527-529
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pp. 987-990
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Keyword(s):
2008 ◽
Vol 600-603
◽
pp. 679-682
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2007 ◽
Vol 556-557
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pp. 787-790
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