Integrated circuits for data communication receivers

2018 ◽  
Author(s):  
Giancarlo Orengo
Keyword(s):  
Integrated Circuits ◽  
Data Communication

scholarly journals Power Efficient Clock Distribuition for Switched Capacitor DC-DC Converters

2018 ◽  
Vol 10 (1) ◽  
pp. 27
Author(s):  
A. S. R. Murthy ◽  
Sridhar T.
Keyword(s):  
Integrated Circuits ◽  
Power Consumption ◽  
Power Distribution ◽  
High Speed ◽  
Low Voltage ◽  
Data Communication ◽  
Distribution Networks ◽  
Propagation Delay ◽  
Switched Capacitor ◽  
Power Efficient

<p>In various VLSI based digital systems, on-chip interconnects have become the system bottleneck in state-of-the-art chips, limiting the performance of high-speed clock distributions and data communication devices in terms of propagation delay and power consumption. Increasing power requirements and power distribution to multi-core architectures is also posing a challenge to power distribution networks in the integrated circuits. Clock distribution networks for the switched capacitor converters becomes a non-trivial task and the increased interconnect lengths cause clock degradation and power dissipation. Therefore, this paper introduce low swing signaling schemes to decrease delay and power consumption. A comparative study presented of low voltage signaling schemes in terms of delay, power consumption and power delay product. Here, we have presented a power efficient signaling topology for driving the clocks to higher interconnect lengths.</p>

scholarly journals Strain-enabled ultra-broadband Ge-based photonic devices for low-cost integration in PICs

2020 ◽  
Author(s):  
Yiding Lin ◽  
Danhao Ma ◽  
Rui-Tao Wen ◽  
Kwang Hong Lee ◽  
Govindo Syaranamual ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Communication Networks ◽  
High Efficiency ◽  
Low Cost ◽  
Data Communication ◽  
Cost Effective ◽  
Photonic Devices ◽  
Single Step ◽  
High Data ◽  
Data Capacity

Abstract Photonic-integrated circuits (PICs) have become one of the most promising solutions to the burgeoning global data communication and are being envisioned to have revolutionary impact in many other emerging fields. This outlook requires future PICs to be significantly more broadband and cost-effective. The current germanium (Ge)-based active photonic devices in PICs are thus facing a new bandwidth-cost trade-off. Here, we demonstrate ultra-broadband, high-efficiency Ge photodetectors up to 1,630 nm operation wavelength and Ge0.99Si0.01 electro-absorption (EA) modulator arrays with an operating range of ~100 nm from 1,525 to 1,620 nm, using a CMOS-compatible recess-type silicon nitride (SiNx) stressor. The broadband operation could facilitate a wide (>100 nm) window for low-cost Ge modulator-detector co-integration, requiring only a single step of Ge epitaxy and two different SiNx depositions. The broad modulation and co-integration coverage can be entirely shifted to shorter (~1,300 nm) and longer (>1,700 nm) wavelengths with small amounts of Si or tin (Sn) alloying. This proof-of-concept work provides a pathway for PICs towards future low-cost and high-data-capacity communication networks, immediately accessible by designers through foundries.

scholarly journals Three-dimensional plasmonic nano-router via optical antennas

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Yi Xu ◽  
Baowei Gao ◽  
Axin He ◽  
Tongzhou Zhang ◽  
Jiasen Zhang
Keyword(s):  
Integrated Circuits ◽  
Three Dimensional ◽  
Data Communication ◽  
Slot Antenna ◽  
Optical Data ◽  
Optical Antennas ◽  
Optical Integrated Circuits ◽  
Integration Density ◽  
3D Network ◽  
All Optical

Abstract A three-dimensional (3D) nanoscale optical router is a much-desired component in 3D stacked optical integrated circuits. However, existing 3D routers based on dielectric configurations suffer from large footprints and nanoscale routers based on plasmonic antennas only work in a 2D in-plane scene. Here, we propose and experimentally demonstrate cross-layered all-optical 3D routers with nanoscale footprints. Optical slot antenna pairs are used to realize the routing of plasmonic signals between different layers for arbitrary direction in a broadband wavelength range. The routers are also integrated with waveguide directly for exploring further applications. Based on these router elements, a 3D network of optical butterfly interconnection is demonstrated for multi-directional all-optical data communication. The proposed configuration paves the way for optical cross-layer routing on the nanoscale and advances the research and applications for 3D plasmonic circuits with high integration density in the future.

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Analytical electron microscopy of grain boundaries in Al-Cu metallizations

1992 ◽  
Vol 50 (2) ◽  
pp. 1684-1685
Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Mode ◽  
Current Density ◽  
Thermal History ◽  
Analytical Electron Microscopy ◽  
Cu Metallization ◽  
Analytical Electron ◽  
Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

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