scholarly journals Analyzing metallurgical interaction during arc surfacing of barrier layers on titanium to prevent the formation of intermetallics in titanium-steel compounds

2021 ◽  
Vol 5 (12(113)) ◽  
pp. 69-82
Author(s):  
Volodymyr Korzhyk ◽  
Vladyslav Khaskin ◽  
Andrii Grynyuk ◽  
Oleg Ganushchak ◽  
Volodymyr Shcheretskiy ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Oil And Gas ◽  
Copper Alloys ◽  
Titanium Layer ◽  
Transition Zones ◽  
Barrier Layers ◽  
Plasma Surfacing ◽  
Thermal Influence ◽  
Titanium Vanadium ◽  
A Current

This paper considers a possibility to obtain high-quality butt junctions of bimetallic sheets from steel clad with a layer of titanium, with the use of barrier layers. The task that was tackled related to preventing the formation of Ti-Fe intermetallic phases (IMPs) between the steel and titanium layer. The barrier layers (height ~0.5 mm) of vanadium and copper alloys were surfaced by arc techniques while minimizing the level of thermal influence on the base metal. To this end, plasma surfacing with a current-driving wire and pulsed MAG surfacing were used. The obtained samples were examined by methods of metallography, X-ray spectral microanalysis, durometric analysis. It has been established that when a layer of vanadium is plated on the surface of titanium, a defect-free structure of variable composition (53.87–65.67) wt % Ti with (33.93–45.54) wt % V is formed without IMPs. The subsequent surfacing of steel on a layer of vanadium leads to the formation of eutectics (hardness up to 5,523 MPa) in the fusion zone, as well as to the evolution of cracks. To prevent the formation of IMPs, a layer of bronze CuBe2 was deposited on the surface of vanadium. The formed layer contributed to the formation of a grid of hot cracks. In the titanium-vanadium-copper transition zones (0.1–0.2 mm wide), a fragile phase was observed. To eliminate this drawback, the bronze CuBe2 was replaced with bronze CuSi3Mn1; a defect-free junction was obtained. When using a barrier layer with CuSi3Mn1, a defect-free junction was obtained (10–30 % Ti; 18–50 % Fe; 5–25 % Cu). The study reported here makes it possible to recommend CuSi3Mn1 as a barrier layer for welding bimetallic sheets "steel-titanium". One of the applications of the research results could be welding of longitudinally welded pipes of main oil and gas pipelines formed from bimetallic sheets of steel clad with titanium.

A Framework to Support the Optimization of Modularized Oil and Gas Structures

2018 ◽  
Author(s):  
Vincenzo Castorani ◽  
Paolo Cicconi ◽  
Michele Germani ◽  
Sergio Bondi ◽  
Maria Grazia Marronaro ◽  
...  
Keyword(s):  
Lead Time ◽  
Oil And Gas ◽  
Steel Structure ◽  
Steel Structures ◽  
Modular System ◽  
Test Case ◽  
Plant Design ◽  
Conceptual Study ◽  
A Current ◽  
Gas Plants

Modularization is a current issue in the context of plant design. A modular system aims to reduce lead time and cost in design phases. An oil & gas plant consists of many Engineered-To-Order solutions to be submitted and approved during the negotiation phase. In this context, design tools and methods are necessary to support the design life cycle from the conceptual study to the detailed project. The paper proposes an approach to optimize the design of modularized oil & gas plants with a focus on the related steel structures. A test case shows the configuration workflow applied to a modular steel structure of about 400 tons. The modularized layout has been optimized using genetic algorithms. A Knowledge Base has been described to support the configuration phase related to the conceptual design. Design rules and metrics have been formalized from the analysis of past solutions.

scholarly journals Molybdenum trioxide thin film recombination barrier layers for dye sensitized solar cells

RSC Advances ◽  
2017 ◽  
Vol 7 (77) ◽  
pp. 48853-48860 ◽  
Author(s):  
Aditya Ashok ◽  
S. N. Vijayaraghavan ◽  
Shantikumar V. Nair ◽  
Mariyappan Shanmugam
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Barrier Layer ◽  
Molybdenum Trioxide ◽  
Dye Sensitized Solar Cells ◽  
Electron Hole ◽  
Barrier Layers ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
Hole Recombination

MoO3 thin film recombination barrier layer suppresses electron–hole recombination at the FTO–TiO2 interface and facilitates charge transport.

scholarly journals Performance of Cu–Ag Thin Films as Diffusion Barrier Layer

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1087
Author(s):  
Po-Hsien Sung ◽  
Tei-Chen Chen
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Glass Forming Ability ◽  
Dynamics Simulation ◽  
Quenching Rate ◽  
Barrier Layers ◽  
Glass Forming ◽  
Diffusion Barrier Layer ◽  
Diffusion Simulation ◽  
Lower Electrical Resistivity

It is well-known that Cu–Sn intermetallic compounds are easily produced during reflow process and result in poor reliability of solder bump. Recently, amorphous metallic films have been considered to be the most effective barrier layer because of the absence of grain boundaries and immiscibility with copper. Since Cu–Ag alloys are characterized by their lower electrical resistivity and superior glass-forming ability, they are appropriate to be used as the diffusion barrier layers. In this study, molecular dynamics simulation was performed to investigate the effects of composition ratio and quenching rate on the internal microstructure, diffusion properties, and the strength of the interface between polycrystalline Cu and Cu–Ag barrier layers. The results showed that Cu40Ag60 and Cu60Ag40 present more than 95% of the amorphous at quenching rate between 0.25 and 25 K/ps, indicating a good glass-forming ability. Diffusion simulation showed that a better barrier performance can be achieved with higher amorphous ratio. For the sample of Cu20Ag80 with quenching rate of 25 K/ps, a void is initially generated in amorphous Cu–Ag layer during the tensile test. This indicates the strength of amorphous Cu–Ag is weaker than Cu–Ag/Cu interface and the polycrystalline Cu layer.

The Effects of Processing on the Microstructure of Copper Thin Films on Tantalum Barrier Layers

1995 ◽  
Vol 391 ◽  
Author(s):  
E.M. Zielinski ◽  
R.P. Vinci ◽  
J.C. Bravman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Barrier Layer ◽  
Crystallographic Orientation ◽  
Deposition Temperature ◽  
Volume Fraction ◽  
Fiber Texture ◽  
Cu Films ◽  
Barrier Layers ◽  
Two Temperatures

abstractPreferred crystallographic orientation and grain size distribution were characterized as a function of processing for sputtered Cu films on Ta underlayers. The Ta barrier layer was deposited at two temperatures, 30 and 100 °C. Cu was deposited at 30, 150 and 250 °C on the 30 °C Ta, and at 100, 150, 200 and 250 °C on the 100 °C Ta. In the first set of samples, with increasing deposition temperature, the Cu (111) fiber texture grew weaker and the volume fraction of randomly oriented grains increased from 0.23 to 0.74. In contrast, for the films deposited on the 100 °C Ta, with increasing deposition temperature, Cu (111) fiber texture strengthened and the fractions of randomly oriented and twinned grains decreased. Grain size was lognormally distributed in all samples and varied approximately parabolically with deposition temperature. At a given deposition temperature, median grain size in the Cu was larger in the films deposited on the 100 °C Ta. These results will be related to the microstructure of the Ta underlayers. Cu microstructure on the 100 °C Ta is shown to be influenced by textural inheritance from the Ta underlayer. Microstructure of the Cu on 30 °C Ta is discussed in terms of trace contaminants.

scholarly journals Connection between geotectonic zoning of territory and its oil and gas potential (on the example of Dniper-Donets rift)

2018 ◽  
pp. 4-10
Author(s):  
Stanislav Yesypovych ◽  
Olga Titarenko ◽  
Alla Bondarenko ◽  
Andrii Bubniak
Keyword(s):  
Oil And Gas ◽  
Geophysical Data ◽  
Transition Zones ◽  
Wide Range ◽  
Drilling Data ◽  
Rift Zones ◽  
Gas Potential ◽  
Geodynamic Activity

Connection between geotectonic zoning of the territory and its oil and gas potential is shown on example of the actual drilling data of Dnieper-Donets Rift. First of all, the zones of connection of different geotectonic elements are the most promising, which is confirmed by their modern geodynamic activity. In this article, such transition zones are called seam rift zones (SRZ) for combining compression (seam) and stretching (rift) conditions. SRZs are distinguished by a wide range of aerospace, morphometric, geological and geophysical data.

scholarly journals FORMATION OF THE TWO-DIMENSIONAL ELECTRON GAS (2DEG) IN THE STRUCTURE WITH TWO AlxGa1-xN/GaN/AlуGa1-уN BARRIER LAYERS

2020 ◽  
pp. 4-16
Author(s):  
A.N. Maksimov
Keyword(s):  
Charge Density ◽  
Surface Charge ◽  
Barrier Layer ◽  
Surface Charge Density ◽  
Surface Concentration ◽  
Barrier Layers ◽  
Noticeable Increase ◽  
Positive Side ◽  
Dimensional Electron Gas ◽  
The Relationship

This article is dedicated to the study of AlxGa1-xN/GaN/AlуGa1-уN heterostructures and spontaneous and piezoelectric polarizations, which induces 2DEG. In this research the surface charge density, the surface concentration of carriers in the channel and the relationship between the amount of Al molar fractions in upper and lower barrier layers and the surface charge density were determined. Change in the concentration of Al mole fractions in the upper barrier layer from 15 to 40, causes noticeable increase in the surface concentration of carriers ns(x). Change in the concentration of Al mole fractions in the lower barrier layer from 0.05 to 0.12, causes noticeable decrease in the surface concentration of ns carriers. The features of high-voltage HEMT with two barrier layers were considered. The introduction of the second barrier layer leads to a better electron confinement in the GaN channel, but at the same time, the maximum carrier density (2DEG) in the channel decreases and the voltage threshold shifts to the positive side.

PRECISE MEASUREMENT OF DEEP ELECTRICAL ANOMALIES

Geophysics ◽  
1944 ◽  
Vol 9 (4) ◽  
pp. 494-539 ◽  
Author(s):  
Thomas S. West ◽  
Clarence C. Beacham
Keyword(s):  
Precise Measurement ◽  
Oil And Gas ◽  
Depth Resolution ◽  
Lateral Variation ◽  
Current Electrode ◽  
Subsurface Zones ◽  
Electrical Prospecting ◽  
Direct Location ◽  
A Current ◽  
Made In

A method of electrical prospecting has been developed in which the deleterious effects of superficial inhomogeneities in resistivity are eliminated. An electrode configuration is used consisting of a current electrode at “infinity,” a pair of current electrodes with a constant separation of a few hundred feet which are used alternately, and a pair of potential electrodes with a constant separation of a few hundred feet, collinear with the pair of current electrodes, and at a distance from them which is varied to secure depth resolution. It is demonstrated that superficial influences are eliminated by forming the resistivity increment, the ratio between apparent resistivity determined by use of the closer current electrode of the alternate pair and that determined by use of the farther current electrode of the alternate pair. It is also demonstrated that the area explored is below a point approximately half‐way between the alternate pair of current electrodes. Resistivity increment curves, called Resistologs by the authors, can be correlated from station to station, and after they are correlated the lateral variation in the electrical properties of selected subsurface zones can be studied. As a result of the latter characteristic of the measurements, a possibility exists for the direct location of oil and gas, observational evidence for which is presented. The results of surveys made in Hart County, Kentucky, and in the Sam Fordyce, Seven Sisters, Pettus, Branyon, Dunlap, Oakville, and Rhode Ranch fields of Southwest Texas are displayed.

The Integration of Low-k Dielectric Material Hydrogen Silsesquioxane (HSQ) with Nitride Thin Films as Barriers

2000 ◽  
Vol 612 ◽  
Author(s):  
Yuxiao Zeng ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Thin Films ◽  
Barrier Layer ◽  
Refractory Metal ◽  
Dielectric Material ◽  
Considerable Importance ◽  
Hydrogen Silsesquioxane ◽  
Barrier Layers ◽  
Vlsi Technology ◽  
Materials Used ◽  
Low K

AbstractHSQ (hydrogen silsesquioxane) is one of the promising low-k materials used in VLSI technology as an intra-metal dielectric to reduce capacitance-related issues. Like any other dielectrics, the integration of HSQ in multilevel interconnect schemes has been of considerable importance. In this study, the compatibility of HSQ with different nitride barrier layers, such as PVD and CVD TiN, PVD TaN, and CVD W2N, has been investigated by using a variety of techniques. The refractory metal barriers, Ti and Ta, are also included for a comparison. The degradation of HSQ films indicates a strong underlying barrier layer dependence. With CVD nitrides or refractory metals as barrier, HSQ exhibits a better structural and property stability than that with PVD nitrides. The possible mechanisms have been discussed to account for these observations.

Solder electromigration behavior in Cu/electroless Ni–P plating/Sn–Cu based joint system at low current densities

2015 ◽  
Vol 2015 (1) ◽  
pp. 000141-000146 ◽  
Author(s):  
Takuya Kadoguchi ◽  
Kimihiro Yamanaka ◽  
Shijo Nagao ◽  
Katsuaki Suganuma
Keyword(s):  
Intermetallic Compound ◽  
Solder Joint ◽  
Barrier Layer ◽  
Solder Joints ◽  
Great Influence ◽  
Joint System ◽  
Barrier Layers ◽  
Current Densities ◽  
Electroless Ni

Electromigration (EM) in solder joints has great influence on their reliability. Nevertheless, few reports have been published on the EM in solder joints with Ni–P barrier layers at lower current densities less than 10 kA/cm2. In the present study, EM in Cu/Ni–P/Sn–0.7Cu/Ni–P/Cu joints was investigated at 150 °C with current densities of 5.0 and 7.5 kA/cm2. The breakdown mode was open failure of the solder joint on the cathode. It was found that Ni in the Ni–P barrier layer diffused toward the anode, resulting in a thicker P-rich layer, which caused the cracks and the delamination of the P-rich layer. Additionally, the diffusion of Sn detached the solder from the Ni3SnP intermetallic compound on the cathode.

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