Multichannel and Multifunctional Frequency-output Sensors of Physical Effects Based on a Universal Field Transistor-type Sensing Element with a Silicon-on-Insulator Structure

2018 ◽  
Vol 61 (2) ◽  
pp. 299-305
Author(s):  
A. V. Leonov ◽  
A. A. Malykh ◽  
V. N. Mordkovich ◽  
M. I. Pavlyuk
Keyword(s):  
Silicon On Insulator ◽  
Sensing Element ◽  
Frequency Output ◽  
Physical Effects ◽  
Field Transistor

scholarly journals An Ultrahigh-Sensitivity Graphene Resonant Gyroscope

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1890
Author(s):  
Yang Lu ◽  
Zhan-She Guo ◽  
Shang-Chun Fan
Keyword(s):  
Angular Velocity ◽  
High Sensitivity ◽  
Velocity Variation ◽  
Beam Length ◽  
Sensing Element ◽  
Finite Element Software ◽  
Resonant Beam ◽  
Frequency Output ◽  
Length Width ◽  
Ultrahigh Sensitivity

In this study, a graphene beam was selected as a sensing element and used to form a graphene resonant gyroscope structure with direct frequency output and ultrahigh sensitivity. The structure of the graphene resonator gyroscope was simulated using the ANSYS finite element software, and the influence of the length, width, and thickness of the graphene resonant beam on the angular velocity sensitivity was studied. The simulation results show that the resonant frequency of the graphene resonant beam decreased with increasing the beam length and thickness, while the width had a negligible effect. The fundamental frequency of the designed graphene resonator gyroscope was more than 20 MHz, and the sensitivity of the angular velocity was able to reach 22,990 Hz/°/h. This work is of great significance for applications in environments that require high sensitivity to extremely weak angular velocity variation.

scholarly journals Sensitivity Analysis of the UTBSOI Transistor based Two-Stage Operational Amplifiers

2020 ◽  
Vol 24 (2) ◽  
Author(s):  
Rekib Uddin Ahmed ◽  
Eklare Akshay Vijaykumar ◽  
Prabir Saha
Keyword(s):  
Sensitivity Analysis ◽  
Silicon On Insulator ◽  
Operational Amplifiers ◽  
Short Channel Effects ◽  
Short Channel ◽  
Two Stage ◽  
Device Model ◽  
Channel Effects ◽  
Physical Effects ◽  
Channel Region

In the nanoscale domain, the MOSFETs are prone to various physical effects due to their shorter channel region known as short-channel effects (SCE). The researchers have proposed an advanced structure of MOSFET known as the ultrathinbody silicon-on-insulator (UTBSOI) to overcome the limitations of SCEs. The UTBSOI is a type of double-gate (DG) MOSFET having superior controllability of gates over the shorter channel region. Nowadays, the UTBSOI MOSFETs can be adopted in the circuit simulators through the use of a device model named BSIM-IMG. The BSIM-IMG has made it possible for the circuit designers to simulate any UTBSOI based analog blocks like operational amplifiers (opamp). The performance parameters of an opamp are very much sensitive to any perturbation in size (W/L) of the constituent MOSFETs, that may cause a drastic change in the output. In this paper, the sensitivity analysis procedure has been proposed for the CMOS and UTBSOI based two-stage opamps as the function of perturbation in W/L. In addition to this, an algorithm has also been presented to do the same. From the simulation results, it is observed that the sensitivity of the UTBSOI based opamp (UTBSOI-opamp) is larger than that of CMOS based opamp (CMOS-opamp).

scholarly journals Nanoribbon Biosensor in the Detection of miRNAs Associated with Colorectal Cancer

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1581
Author(s):  
Yuri D. Ivanov ◽  
Kristina V. Goldaeva ◽  
Kristina A. Malsagova ◽  
Tatyana O. Pleshakova ◽  
Rafael A. Galiullin ◽  
...  
Keyword(s):  
Colorectal Cancer ◽  
Detection Limit ◽  
Early Detection ◽  
Blood Plasma ◽  
Silicon On Insulator ◽  
Diagnostic Systems ◽  
Sensing Element ◽  
Top Down ◽  
Synthetic Analogues ◽  
Dna Oligonucleotides

A nanoribbon biosensor (NRBS) was developed to register synthetic DNAs that simulate and are analogous to miRNA-17-3p associated with colorectal cancer. Using this nanoribbon biosensor, the ability to detect miRNA-17-3p in the blood plasma of a patient diagnosed with colorectal cancer has been demonstrated. The sensing element of the NRBS was a nanochip based on a silicon-on-insulator (SOI) nanostructure. The nanochip included an array of 10 nanoribbons and was designed with the implementation of top-down technology. For biospecific recognition of miRNA-17-3p, the nanochip was modified with DNA probes specific for miRNA-17-3p. The performance of the nanochip was preliminarily tested on model DNA oligonucleotides, which are synthetic analogues of miRNA-17-3p, and a detection limit of ~10−17 M was achieved. The results of this work can be used in the development of serological diagnostic systems for early detection of colorectal cancer.

A Unified Approach for Performance Degradation Analysis from Transistor to Gate Level

2018 ◽  
Vol 8 (1) ◽  
pp. 412
Author(s):  
Izhar Hussain ◽  
Marco Vacca ◽  
Fabrizio Riente ◽  
Mariagrazia Graziano
Keyword(s):  
Oxide Thickness ◽  
Performance Degradation ◽  
Silicon On Insulator ◽  
Unified Approach ◽  
Hot Carrier ◽  
Random Dopant Fluctuation ◽  
Key Points ◽  
Degradation Analysis ◽  
Physical Effects ◽  
Technology Nodes

In this paper, we present an extensive analysis of the performance degradation in MOSFET based circuits. The physical effects that we consider are the random dopant fluctuation (RDF), the oxide thickness fluctuation (OTF) and the Hot-carrier-Instability (HCI). The work that we propose is based on two main key points: First, the performance degradation is studied considering BULK, Silicon-On-Insulator (SOI) and Double Gate (DG) MOSFET technologies. The analysis considers technology nodes from 45nm to 11nm. For the HCI effect we consider also the time-dependent evolution of the parameters of the circuit. Second, the analysis is performed from transistor level to gate level. Models are used to evaluate the variation of transistors key parameters, and how these variation affects performance at gate level as well.The work here presented was obtained using TAMTAMS Web, an open and publicly available framework for analysis of circuits based on transistors. The use of TAMTAMS Web greatly increases the value of this work, given that the analysis can be easily extended and improved in both complexity and depth.

The Microelectronic Radiomeasuring Transducers of Magnetic Field with a Frequency Output

1970 ◽  
Vol 110 (4) ◽  
pp. 67-70 ◽  
Author(s):  
V. S. Osadchuk ◽  
A. V. Osadchuk
Keyword(s):  
Magnetic Field ◽  
Integrated Circuits ◽  
Circuit Design ◽  
Bipolar Transistors ◽  
Sensing Element ◽  
Active Elements ◽  
Inductive Element ◽  
Frequency Output ◽  
The Given

In the given article the integrated circuits of transducers of a magnetic field in which magnetic sensitive transistors act in a role of active elements of autogenerating arrangements of transducers that simplifies circuits of sensor controls of a magnetic field are offered. It is shown, that for the complete embodying transducers in an integrated view the passive tuned-circuit inductance of the arrangement is implemented as the reactive transistor. The greatest sensitivity which changes from 7,2 kHz/mT up to 6,3 kHz/mT , the circuit design about a magnet a sensing element has on the basis of two collector bipolar transistors with the active inductive element. Ill. 9, bibl. 7 (in English; abstracts in English and Lithuanian).http://dx.doi.org/10.5755/j01.eee.110.4.289

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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