Unique Approaches to Isolate Nanoscale Defect in Snake-Comb Test Structure

2015 ◽  
Author(s):  
Sujing Xie ◽  
Nathan Wang ◽  
Chaoying Chen ◽  
Qindi Wu
Keyword(s):  
Failure Analysis ◽  
Electrical Resistance ◽  
Test Structure ◽  
Yield Enhancement ◽  
Nanometer Scale ◽  
Cross Sectional ◽  
Root Cause ◽  
Unique Approach ◽  
Voltage Contrast ◽  
Root Cause Identification

Abstract Multiple techniques including electrical resistance measurement plus calculation, cross-sectional view of passive voltage contrast (XPVC) sequential searching, planar and cross-section STEM are successfully used to isolate a nanoscale defect, single metallic stringer in a snakecomb test structure. The defect could not be found by traditional failure analysis methods or procedures. The unique approach presented here, expands failure analysis capabilities to the detection of nanometer-scale defects and the identification of their root causes. With continuous shrinking feature sizes, the need of such techniques becomes more vital to failure analysis and root cause identification, and therefore yield enhancement in fabrication.

Advancement in Data Engineering and Feature Processing Workflow by Using Deep Learning Techniques for the Automation of ESP Failure Root Cause Analyses

2021 ◽  
Author(s):  
Saniya Karnik ◽  
Navya Yenuganti ◽  
Bonang Firmansyah Jusri ◽  
Supriya Gupta ◽  
Prasanna Nirgudkar ◽  
...  
Keyword(s):  
Deep Learning ◽  
Failure Analysis ◽  
Language Processing ◽  
Turnaround Time ◽  
Process Efficiency ◽  
Root Cause ◽  
Feature Processing ◽  
Learning Techniques ◽  
Electrical Submersible Pump ◽  
Root Cause Identification

Abstract Today, Electrical Submersible Pump (ESP) failure analysis is a tedious, human-intensive, and time-consuming activity involving dismantle, inspection, and failure analysis (DIFA) for each failure. This paper presents a novel artificial intelligence workflow using an ensemble of machine learning (ML) algorithms coupled with natural language processing (NLP) and deep learning (DL). The algorithms outlined in this paper bring together structured and unstructured data across equipment, production, operations, and failure reports to automate root cause identification and analysis post breakdown. This process will result in reduced turnaround time (TAT) and human effort thus drastically improving process efficiency.

Failure Analysis of a Qualification Unit Injector for a Satellite Thruster

1998 ◽  
Author(s):  
M. Lipschutz ◽  
R. Brannam ◽  
T. Nguyentat
Keyword(s):  
Failure Analysis ◽  
Cross Section ◽  
Combustion Products ◽  
Design Parameters ◽  
Cross Sectional ◽  
X Ray ◽  
Root Cause ◽  
Qualification Testing ◽  
Non Destructive ◽  
Unit Injector

Abstract This article details the results of a failure analysis performed on a Qualification Unit injector for a military satellite thrusters and explains that the failure was initially detected due to a shift in performance during qualification testing. Failure analysis involved non-destructive evaluation on the injector using micro-focus X-ray and scanning electron microscopy. Serial cross-sectional metallography was then performed, with each cross-section documented by optical microscopy and SEM. The failure analysis resulted in three main conclusions: (1) the root cause of the failure was attributed to multiple detonations in or around the damaged orifice; these detonations were likely caused by fuel and/or combustion products condensing in the orifice between pulses and then igniting during a subsequent pulse; (2) multiple damage mechanisms were identified in addition to the ZOT detonations; and (3) the material and platelet manufacturing process met all design parameters.

An Application of Passive Voltage Contrast (PVC) to Failure Analysis of CMOS LSIs Using Secondary Electron Collection

1999 ◽  
Author(s):  
Akira Nishikawa ◽  
Naoko I. Kato ◽  
Yoshiteru Kohno ◽  
Nobuhito Miura ◽  
Masao Shimizu
Keyword(s):  
Failure Analysis ◽  
Short Circuit ◽  
Cross Sectional ◽  
Backscattered Electrons ◽  
Emission Efficiency ◽  
Electron Collection ◽  
Open Defect ◽  
Absorption Current ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract This paper describes a method for applying passive voltage contrast (PVC) in the failure analysis of CMOS LSIs using a conventional scanning electron microscope (SEM), and demonstrates the effectiveness of this method. It was confirmed by measurement of the stage absorption current that the combined emission efficiency of secondary and backscattered electrons from aluminum is larger than 1 at acceleration voltages lower than about 2.5 kV. This means that local positive charges should be generated on a conductor in association with its irradiation with an electron beam at a relatively low acceleration voltage. However, a pn junction connected to the conductor would change the potential. The potential is still positive if the conductor is connected to a reverse-biased diode but becomes lower if such a diode is forward-biased. The PVC signal observed on the conductor should be defined according to the bias state of any diode connected to the conductor. Therefore, for failure analysis applications, if the bias state of a diode connected to a suspicious conductor is known, the PVC observation is useful for determining whether there is an open defect or a short-circuit defect. Some case studies are presented to demonstrate the effectiveness of the method. Cross-sectional TEM observations of defects localized in this way are also included.

Application of B-Scan SAT Mode, an Acoustic Cross Section Technique to Analyze Packaged Components beyond Delamination

2020 ◽  
Author(s):  
Srinath Rajaram ◽  
Denise Barrientos ◽  
Nadia Ahmad ◽  
Robert Carpenter ◽  
Eric Barbian
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Turnaround Time ◽  
Destructive Testing ◽  
Cross Sectional ◽  
Root Cause ◽  
Section Technique ◽  
Customer Returns ◽  
Tomography Method ◽  
Non Destructive

Abstract Failure Analysis labs involved in customer returns always face a greater challenge, demand from customer for a faster turnaround time to identify the root cause of the failure. Unfortunately, root cause identification in failure analysis is often performed incompletely or rushing into destructive techniques, leading to poor understanding of the failure mechanism and root-cause, customer dissatisfaction. Scanning Acoustic Tomography (SAT), also called Scanning Acoustic Microscope (SAM) has been adopted by several Failure Analysis labs because it provides reliable non-destructive imaging of package cracks and delamination. The SAM is a vital tool in the effort to analyze molded packages. This paper provides a review of non-destructive testing method used to evaluate Integrated Circuit (IC) package. The case studies discussed in this paper identifies different types of defects and the capabilities of B-Scan (cross-sectional tomography) method employed for defect detection beyond delamination.

Effective Defect Localization on Nanoscale Short Failures

2013 ◽  
Author(s):  
Jiang Huang ◽  
Ryan Sweeney ◽  
Laurent Dumas ◽  
Mark Johnston ◽  
Pei-Yi Chen ◽  
...  
Keyword(s):  
High Resolution ◽  
Leading Edge ◽  
High Sensitivity ◽  
Silicon On Insulator ◽  
Nanometer Scale ◽  
Tem Analysis ◽  
Root Cause ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Voltage Contrast

Abstract This paper presents two case studies, based on 32nm Silicon-On-Insulator (SOI) and 28nm bulk Si technology, on finding the root cause of nanometer scale short failures using Passive Voltage Contrast (PVC), Active Voltage Contrast (AVC) and Transmission Electron Microscopy (TEM). PVC/AVC is used as precision localization technique that is critical for a successful FA-TEM analysis. Combining planar TEM sample preparation and high sensitivity Energy Dispersive Spectroscopy (EDS) mapping, a small residual filament, which is not visible even at high resolution TEM, is found to short two metal lines. The effective usage of voltage contrast and TEM provides the need of high throughput, high precision, and high resolution in the advanced FA lab that serves leading-edge semiconductor manufacturing.

An Effective and Practical Analysis Technique for Open Defect Isolation at IDD Leakage Failure by Observing Transient Photo Emission

1998 ◽  
Author(s):  
A. Nishikawa ◽  
N.I. Kato ◽  
J. Matsuzawa ◽  
K. Takagi ◽  
N. Miura
Keyword(s):  
Failure Analysis ◽  
Transient Behavior ◽  
Cross Sectional ◽  
Root Cause ◽  
Analysis Technique ◽  
Defect Isolation ◽  
Electron Image ◽  
Open Defects ◽  
Leakage Failure ◽  
Current Emission

Abstract A new analysis method using conventional emission microscopy (EMS) was developed for localizing open defects in CMOS LSIs. EMS is widely used for failure analysis of IDD (power supply current) leakage failures. The root cause of a failure is deduced by considering the emission characteristics associated with the IDD leakage current, emission shape, emission energy spectrum, and exact location on an Si die. Our new technique focuses on the observation of transient photoemission immediately after VDD application. During IDD leakage failure analysis, unique transient photoemission characteristics are observed. Immediately after VDD application, strong photoemission is briefly observed at the drain edge of an n-FET, but disappears after stabilization of the IDD current. We assumed that temporary photoemission would not be generated in transient behavior unless some kind of open defects were located at a specific conductor connected to the gate electrode. This mechanism was verified by nonbiased charge-up contrast of a conventional secondary electron image (SEI) and cross-sectional SEM observation at the defective open location. The dynamic method of observing transient photoemission proposed here is a very effective and practical way for detecting the locations of open failures in CMOS LSIs. Some examples of open mode failure analysis are described, along with cross-sectional TEM observations.

Root Cause Finding of a Diode Leakage Failure Using Scanning Magnetic Microscopy and ToF-SIMS as Key Methods

2006 ◽  
Author(s):  
H. Preu ◽  
W. Mack ◽  
T. Kilger ◽  
B. Seidl ◽  
J. Walter ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Quantum Interference ◽  
Leakage Currents ◽  
Root Cause ◽  
Microelectronic Devices ◽  
Successful Approach ◽  
Magnetic Microscopy ◽  
Leakage Failure ◽  
Root Cause Identification

Abstract One challenge in failure analysis of microelectronic devices is the localization and root cause finding of leakage currents in passives. In this case study we present a successful approach for failure analysis of a diode leakage failure. An analytical flow will be introduced, which contains standard techniques as well as SQUID (superconducting quantum interference device) scanning magnetic microscopy and ToFSIMS as key methods for localization and root cause identification. [1]

Failure Mechanism Studies and Root Cause Identification of Nonstick on Pad on Microchip Al Bondpads

2014 ◽  
Author(s):  
Hua Younan ◽  
Zhou Yongkai ◽  
Chen Yixin ◽  
Fu Chao ◽  
Li Xiaomin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Wafer Fabrication ◽  
Assembly Process ◽  
Root Cause ◽  
Barrier Metal ◽  
Root Cause Identification ◽  
Induced Defects

Abstract It is well-known that underetch material, contamination, particle, pinholes and corrosion-induced defects on microchip Al bondpads will cause non-stick on pads (NSOP) issues. In this paper, the authors will further study NSOP problem and introduce one more NSOP failure mechanism due to Cu diffusion caused by poor Ta barrier metal. Based on our failure analysis results, the NSOP issue was not due to the assembly process, but due to the wafer fabrication. The failure mechanism might be that the barrier metal Ta was with pinholes, which caused Cu diffused out to the top Al layer, and then formed the “Bump-like” Cu defects and resulted in NSOP on Al bondpads during assembly process.

Advanced Scan Chain Failure Analysis Using Laser Modulation Mapping and Continuous Wave Probing

2011 ◽  
Author(s):  
Steven Kasapi ◽  
William Lo ◽  
Joy Liao ◽  
Bruce Cory ◽  
Howard Marks
Keyword(s):  
Failure Analysis ◽  
Continuous Wave ◽  
Wafer Level ◽  
Root Cause ◽  
Non Invasive ◽  
Laser Probing ◽  
Volume Yield ◽  
Scan Chain ◽  
Leakage Failure ◽  
Root Cause Identification

Abstract A variety of EFA techniques have been deployed to improve scan chain failure isolation. In contrast to other laser techniques, modulation mapping (MM) does not require electrically perturbing of the device. Beginning with a review of MM and continuous-wave (CW) probing as well as shift debug using MM, this paper presents three case studies involving scan chains with subtle resistive and leakage failure mechanisms, including transition, bridge, and slow-to-rise/fall failures, using a combination of these techniques. Combining modulation mapping with laser probing has proven to be a very effective and efficient methodology for isolating shift defects, even challenging timing-related shift defects. So far, every device submitted for physical failure analysis using this workflow has led to successful root cause identification. The techniques are sufficiently non-invasive and straightforward that they can be successfully applied at wafer level for volume, yield-oriented EFA.

Process Flow Employed for Parametric Test Structure Chain Opens Fault Isolation in 20 nm and Sub-20 nm Technologies in High Throughput Foundries

2016 ◽  
Author(s):  
Satish Kodali ◽  
Yinzhe Ma ◽  
Chong Khiam Oh ◽  
Wayne Zhao ◽  
Felix Beaudoin
Keyword(s):  
Cross Sections ◽  
Process Development ◽  
Fault Isolation ◽  
Flow Sheet ◽  
Process Flow ◽  
Parametric Test ◽  
Root Cause ◽  
Voltage Contrast ◽  
Root Cause Identification ◽  
20 Nm

Abstract With increasing complexity involved in advance node semiconductor process development, dependability on parametric test structures has also increased significantly. Test structures play a predominant role throughout the entire development cycle of a product. They are used to understand the process windows and also help to monitor the health of a line. This work provides a process flow sheet for root cause identification on chain opens on advanced 20 nm and sub-20 nm technologies setting a standard guideline for a specific category fail type. It provides a consistent way of attack in a much more streamlined fashion. Further, dependability on TEM rather than convention FIB cross-sections provides shortest time to root cause identification. Three typical cases encountered are discussed to demonstrate the idea: embedded chain opens by electron beam absorbed current (EBAC) isolation, chains opens at level by EBAC isolation, and chains opens at level by passive voltage contrast isolation.

Sign in / Sign up

Export Citation Format

Share Document