scholarly journals Early Fault-Analysis Using In-Line Raman Spectroscopy Metrology

2021 ◽  
Author(s):  
D. Fishmana ◽  
L. Neemana ◽  
N. Meira ◽  
Y. Orena ◽  
G. Baraka ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
High Reliability ◽  
High Sensitivity ◽  
Fault Analysis ◽  
Electrical Performance ◽  
Data Retention ◽  
Device Reliability ◽  
Scale Down ◽  
The Relationship ◽  
Advanced System

Abstract As semiconductor device dimensions scale down, process variation impact on reliability becomes increasingly severe. This trend stems from the high-reliability requirements typical for advanced system applications, the narrowing process margins and the high sensitivity of devices to material and dimensional variations. At the process level, many deviations from nominal conditions can degrade the devices' reliability. Examples are induced charge traps in the various types of memory cells, electrical performance inhibitors due to lattice defects or poor stress management and poor data retention due to contamination by killer elements. We claim that monitoring and correcting deviations throughout the fabrication process provides an effective approach for preventing reliability failures. By restricting deviations below specific threshold levels and screening out reliability and End Of line (EOL) related parameters, eventual device reliability can be safeguarded. This paper addresses the relationship between various process parameters and reliability, and reviews the enablers of preventive, early-detection inline metrology in the fab.

Advanced Ceramic Structures and Materials for High-Reliability Millimeter-Wave Applications

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000182-000185
Author(s):  
Iris Labadie
Keyword(s):  
Millimeter Wave ◽  
Semiconductor Device ◽  
High Reliability ◽  
Electrical Performance ◽  
Low Loss ◽  
Passive Components ◽  
Package Design ◽  
The Past ◽  
Performance Requirements ◽  
Circuit Components

Semiconductor device speeds and circuit operating frequencies have increased substantially over the past decade. Although millimeter-wave technology has been around for over 100 years, it is only within the past 5–10 years that increased demand for millimeter-wave commercial products and services has driven the development of new electronic package designs, low-loss materials, and the transformation of passive components to integrated and smaller geometries. High-reliability applications have employed millimeter-waves for several decades, but typically utilized heavy materials and distributed architectures. The transition of high-reliability millimeter-wave applications to new materials such as low-temperature co-fired ceramics requires innovative package designs to achieve comparable or better electrical performance in a much smaller form factor. Ceramic packaging technology continues to meet or exceed the performance requirements of high-reliability millimeter-wave applications with a broadened portfolio of material sets and innovative internal circuit components such as filter banks, antennas, and waveguides. Today's ceramic package design techniques and materials for applications within current and future high-reliability millimeter-wave markets will be discussed.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

scholarly journals A Full-Range Flexible and Printed Humidity Sensor Based on a Solution-Processed P(VDF-TrFE)/Graphene-Flower Composite

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1915
Author(s):  
Shenawar Ali Khan ◽  
Muhammad Saqib ◽  
Muhammad Muqeet Rehman ◽  
Hafiz Mohammad Mutee Ur Rehman ◽  
Sheik Abdur Rahman ◽  
...  
Keyword(s):  
Active Layer ◽  
Humidity Sensor ◽  
High Reliability ◽  
Full Range ◽  
High Sensitivity ◽  
Fast Response ◽  
Considerable Change ◽  
Relative Humidity Range ◽  
Response And Recovery ◽  
Proportional Relationship

A novel composite based on a polymer (P(VDF-TrFE)) and a two-dimensional material (graphene flower) was proposed as the active layer of an interdigitated electrode (IDEs) based humidity sensor. Silver (Ag) IDEs were screen printed on a flexible polyethylene terephthalate (PET) substrate followed by spin coating the active layer of P(VDF-TrFE)/graphene flower on its surface. It was observed that this sensor responds to a wide relative humidity range (RH%) of 8–98% with a fast response and recovery time of 0.8 s and 2.5 s for the capacitance, respectively. The fabricated sensor displayed an inversely proportional response between capacitance and RH%, while a directly proportional relationship was observed between its impedance and RH%. P(VDF-TrFE)/graphene flower-based flexible humidity sensor exhibited high sensitivity with an average change of capacitance as 0.0558 pF/RH%. Stability of obtained results was monitored for two weeks without any considerable change in the original values, signifying its high reliability. Various chemical, morphological, and electrical characterizations were performed to comprehensively study the humidity-sensing behavior of this advanced composite. The fabricated sensor was successfully used for the applications of health monitoring and measuring the water content in the environment.

scholarly journals Elevated circulating FABP4 concentration predicts cardiovascular death in a general population: a 12-year prospective study

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Norie Saito ◽  
Masato Furuhashi ◽  
Masayuki Koyama ◽  
Yukimura Higashiura ◽  
Hiroshi Akasaka ◽  
...  
Keyword(s):  
General Population ◽  
High Sensitivity ◽  
Cardiovascular Death ◽  
Population Based ◽  
Causal Link ◽  
Fatty Acid Binding ◽  
Reactive Protein ◽  
Cox Proportional Hazard ◽  
Kaplan Meier ◽  
The Relationship

AbstractFatty acid-binding protein 4 (FABP4) is secreted from adipose tissue and acts as an adipokine, and an elevated circulating FABP4 level is associated with metabolic disorders and atherosclerosis. However, little is known about the causal link between circulating FABP4 level and mortality in a general population. We investigated the relationship between FABP4 concentration and mortality including cardiovascular death during a 12-year period in subjects of the Tanno-Sobetsu Study, a population-based cohort (n = 721, male/female: 302/419). FABP4 concentration at baseline was significantly higher in female subjects than in male subjects. All-cause death occurred in 123 (male/female: 74/49) subjects, and 34 (male/female: 20/14) and 42 (male/female: 26/16) subjects died of cardiovascular events and cancer, respectively. When divided into 3 groups according to tertiles of FABP4 level at baseline by sex (T1–T3), Kaplan–Meier survival curves showed that there were significant differences in rates of all-cause death and cardiovascular death, but not cancer death, among the groups. Multivariable Cox proportional hazard model analysis with a restricted cubic spline showed that hazard ratio (HR) for cardiovascular death, but not that for all-cause death, significantly increased with a higher FABP4 level at baseline after adjustment of age and sex. The risk of cardiovascular death after adjustment of age, sex, body mass index and levels of brain natriuretic peptide and high-sensitivity C-reactive protein in the 3rd tertile (T3) group (HR: 4.96, 95% confidence interval: 1.20–22.3) was significantly higher than that in the 1st tertile (T1) group as the reference. In conclusion, elevated circulating FABP4 concentration predicts cardiovascular death in a general population.

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

ANALYSIS OF THE ERROR IN DETERMINING THE EQUIVALENT SIZE OF A DEFECT BY THE STANDARDLESS METHOD DURING ULTRASONIC TESTING

2021 ◽  
pp. 50-57
Author(s):  
A. N. Kireev ◽  
M. A. Kireeva
Keyword(s):  
Relative Error ◽  
High Reliability ◽  
Ultrasonic Method ◽  
Experimental Studies ◽  
Standard Samples ◽  
Defect Identification ◽  
Identification Method ◽  
Maximum Value ◽  
Software Product ◽  
The Relationship

The article provides a review and analysis of the defect identification method for determining the size of discontinuities when diagnosing various machine parts and units by the manual ultrasonic method. This method makes it possible to determine the equivalent size of discontinuities of various types without using standard samples of an enterprise: point planar and volumetric; extended planar and volumetric. The method is based on the use of the relationship between the amplitude and time characteristics of the echo signal from the discontinuity and the backside signal in the object being diagnosed and the equivalent size of the discontinuity. The article presents the mathematical apparatus for the implementation of this method. Also presented is a software product that allows you to automate calculations when using this defect identification method. The article contains experimental studies of the method for determining the equivalent dimensions of discontinuities of various types, which have shown its high reliability. The maximum value of the relative error in determining the equivalent size of a point planar discontinuity was 2.867 %. The maximum value of the relative error in determining the equivalent size of a point volumetric discontinuity was 1.986 %. The maximum value of the relative error in determining the transverse equivalent size of an extended planar discontinuity was 0.667 %. The maximum value of the relative error in determining the transverse equivalent size of an extended volumetric discontinuity was 1.95 %.

Word Fluency Test Performance in Primary Progressive Aphasia and Primary Progressive Apraxia of Speech

2021 ◽  
pp. 1-8
Author(s):  
Lucia Scheffel ◽  
Joseph R. Duffy ◽  
Edythe A. Strand ◽  
Keith A. Josephs
Keyword(s):  
Test Performance ◽  
Primary Progressive Aphasia ◽  
High Sensitivity ◽  
Clinical Group ◽  
Apraxia Of Speech ◽  
Word Fluency ◽  
Progressive Aphasia ◽  
Primary Progressive ◽  
The Relationship ◽  
Fluency Task

Purpose This study compared performance on three-word fluency measures among individuals with primary progressive aphasia (PPA) and primary progressive apraxia of speech (PPAOS), and examined the relationship between word fluency and other measures of language and speech. Method This study included 106 adults with PPA and 30 adults with PPAOS. PPA participants were divided into three clinical subgroups: semantic (svPPA), logopenic (lvPPA), and nonfluent/agrammatic with or without apraxia of speech (nfPPA). Category fluency, letter fluency, and action/verb fluency tasks were administered to all participants. Results The four clinical groups performed abnormally on the word fluency measures, although not to a degree that represented high sensitivity to their PPA or PPAOS diagnosis. All PPA subgroups produced fewer words compared to individuals with PPAOS on all word fluency measures. Moderate correlations were found between word fluency and aphasia severity and naming performance in some of the clinical groups. Conclusions Word fluency measures are often challenging for individuals with PPA and PPAOS, but they are not of equal difficulty, with letter fluency being the most difficult. Differences among word fluency tests also vary to some degree as a function of the clinical group in question, with least impairment in PPAOS. However, the findings of this study do not support statistically significant differences in word fluency task performance among the PPA subgroups. Correlations suggest that word fluency performance in PPA is at least partly related to aphasia severity.

scholarly journals Agroecological Determinants of Potato Spatiotemporal Yield Variation at the Landscape Level in the Central and Northern Ukraine

2021 ◽  
Vol 4 (2) ◽  
pp. 34-47
Author(s):  
Anastasiia Zymaroieva ◽  
Tetiana Fedoniuk ◽  
Svitlana Matkovska ◽  
Olena Andreieva ◽  
Victor Pazych
Keyword(s):  
Crop Yields ◽  
Climatic Factors ◽  
High Sensitivity ◽  
Potato Yield ◽  
Limiting Factors ◽  
Forest Steppe ◽  
Yield Parameters ◽  
Bioclimatic Variables ◽  
Potato Yields ◽  
The Relationship

Global food security largely depends on the crop yield increase, so the study of the yield-limiting factors of potato (the second bread) is a pressing issue today. This study determines the contribution of the agroecological factors, namely, bioclimatic variables, soil indicators, and factors of landscape diversity, to the variation in potato yields. Conducted in Polissya and Forest-steppe zones of Ukraine during 1991–2017, this study has not only addressed the relationship between ecological determinants and potato yields, but also considered crop yields as a dynamic system. The dynamics of potato yields from the mid-1990s to the present is described by a log-logistic model. There are statistically significant regression dependencies between potato yield parameters and agroecological factors. Potato yield is dependent on the diversity of landscape cover. The relationship between yield parameters and landscape-ecological diversity is non-linear, which determines the presence of optimal landscape structure for the highest potato yields. Among climatic factors, the continental climate is of the greatest importance for potato yield. The high sensitivity of potato yield parameters to soil indices was found, and mostly the soil texture components (silt content), which largely determines the potato yield spatial variation.

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