scholarly journals ROBUST AND SECURE S-BOX DESIGN WITH GATED HYBRID ENERGY RECOVERY LOGIC (GHERL) FOR IOT APPLICATIONS

10.6036/10108 ◽  
2022 ◽  
Vol 97 (1) ◽  
pp. 79-84
Author(s):  
RUBAN GLADWIN ◽  
NEHRU KASTHURI
Keyword(s):  
Internet Of Things ◽  
Power Consumption ◽  
Cyber Security ◽  
Energy Recovery ◽  
High Energy ◽  
Leakage Power ◽  
Handheld Devices ◽  
Power Gating ◽  
Hybrid Energy ◽  
Adiabatic Logic

The smart Internet of Things (IoT) network relies heavily on data transmission over wireless channels. Hence, it should be designed to be robust against the attacks from hackers and antagonists. The confidentiality in IoT devices is directly proportional to the complexity and power consumption. To mitigate these issues, this paper proposes a secure Substitution Box (S-Box) design that is exploited in the IoT for cyber security applications. The S-Box is based on Gated Hybrid Energy Recovery Logic (GHERL) that is an amalgamation of two different techniques as adiabatic logic and power gating. Adiabatic logic is preferred to attain high energy efficiency in practical applications such as portable and handheld devices. Power gating technique is preferred to reduce the leakage power and energy consumption. The proposed GHERL XOR gate and S-Box are implemented with 125nm technology in Tanner EDA tool. The consequences of the experiments exhibits that the novel S-Box design with GHERL XOR decreases the power consumption by 1.76%, 35.26%, 36.81%, 41.01% and reduces the leakage power by 58.54%, 20.27%, 27.38%, 13.63% when compared with the existing techniques such as S-Box with sleep transistor, dual sleep transistor, dual-stack and sleepy keeper approach. Keywords: Adiabatic logic, Power Gating, Internet of Things, S-Box

scholarly journals Low Power Checks in Multi Voltage Designs

2020 ◽  
Vol 11 ◽  
pp. 105-111
Author(s):  
K. R. Haripriya ◽  
Ajay Somkuwar ◽  
Laxmi Kumre
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Semiconductor Industry ◽  
Power Saving ◽  
Critical Issue ◽  
Leakage Power ◽  
Design Flow ◽  
Power Gating ◽  
Low Power Architectures

Leakage power consumption has been almost a serious problem these days in semiconductor industry. Many low power techniques like multi-voltage, power gating etc. are deployed to improve power saving. Power aware verification hence has become a critical issue now. Static low power verification has been developed to verify that low power architectures are designed in correct approach meeting all electrical rules in SoC. The UPF(Unified Power Format) is the standardized format that has all power intent information and can be used throughout the design flow to ensure that the power specification is intact. Firstly, this paper describes the special cells and its operation used in low power techniques. Secondly it describes the major checks examined at each stage using Synopsys VCLP tool and finally debugging with the tool and conclusion.

scholarly journals Leakage Power Minimization Using Gating Technique In FPGA Controlled Device

2013 ◽  
Vol 2 (04) ◽  
pp. 07-12
Author(s):  
Mr. Sagar Kothawade
Keyword(s):  
Power Consumption ◽  
Power Analysis ◽  
Research Work ◽  
Leakage Power ◽  
Total Power ◽  
Power Gating ◽  
Low Leakage ◽  
Look Up Table ◽  
Area Overhead ◽  
Total Power Consumption

FPGA based controlled devices are widely used in integrated chip sector provided the power consumed by such devices should be low. Leakage power takes vital part in contributing towards the total power consumption. This research work concentrates in proposing a power gating technique based on look up table approach. The novelty of this approach is that common look up tables are employed for asynchronous architectures for each leaf node. Due to this the leakage power and the total area overhead can be minimized. The proposed architecture is simulated through M-Power analysis and simulator tool for leaf nodes and efficiently utilizes H-tree methodology to minimize area. The reduction in number of look up tables leads to 45% to 50% reduction in leakage power of FPGA device.

scholarly journals Ultra Low Power Process Tolerant 10T (PT10T) SRAM with Improved Read/Write Ability for Internet of Things (IoT) Applications

2017 ◽  
Author(s):  
Pooran Singh ◽  
Santosh Vishvakarma
Keyword(s):  
Internet Of Things ◽  
Power Consumption ◽  
Low Power ◽  
Leakage Power ◽  
Static Noise Margin ◽  
Ultra Low Power ◽  
Iot Applications ◽  
Noise Margin ◽  
Standby Mode ◽  
Static Noise

An ultra-low power (ULP), power gated static random access memory (SRAM) is presented for Internet of Things (IoT) applications, which operates in sub-threshold voltage ranges from 300mV to 500mV. The proposed SRAM has tendency to operate in low supply voltages with high static and dynamic noise margins. The IoT application involves battery enabled low leakage memory architecture in subthreshold regime which has low power consumption. Therefore, to improve power consumption along with better cell stability, a power gated 10T SRAM is presented. The proposed cell uses a power gated p-MOS transistor to reduce the leakage power or static power in standby mode. Moreover, due to the schmitt triggering and read decoupling of 10T SRAM the static and dynamic behavior in read, write and standby mode has shown enhanced tolerance at different process, voltage and temperature (PVT) conditions. The proposed SRAM shows better results in terms of leakage power, read static noise margin (RSNM), write static noise margin (WSNM), write-ability or write trip point (WTP), read-write energy and dynamic read margin (DRM). Further, these parameters are observed at 8-Kilo bit (Kb) and compared with already existing SRAM architectures. It is observed that the leakage power is reduced by 1/81×, 1/75× of the conventional 6T (C6T) SRAM and read decoupled 8T (RD8T) SRAM, respectively at 300mV VDD. On the contrary, RSNM, WSNM, WTP and DRM values are improved by 3×, 2×, 11.11% and 31.8% as compared to C6T SRAM, respectively. Similarly, proposed 10T has 1.48×, 25% and 9.75% better RSNM, WSNM and WTP values as compared to RD8T SRAM, respectively at 300mV VDD.

Leakage Power Reduction in 32-bit Digital Comparator Using Modified Power Gating Technique

2015 ◽  
Vol 742 ◽  
pp. 741-744 ◽  
Author(s):  
G. Amuthavalli ◽  
R. Gunasundari ◽  
A. Nijandan
Keyword(s):  
Power Consumption ◽  
High Performance ◽  
Channel Length ◽  
Power Reduction ◽  
Leakage Power ◽  
Power Gating ◽  
Dynamic Power ◽  
Digital Comparator ◽  
Static Power ◽  
Scaling Down

As scaling down of CMOS transistor’s channel length is done for miniaturization, the design community primarily focuses on the high performance & power-aware design. The power consumption of any circuit solely holds the performance and the life of it. But static power consumption deteriorates them and dominates the dynamic power consumption because of its leakage components. A modified approach of pulse triggering in the Power Gating technique called MPG (Modified Power Gating) is proposed to reduce the static power consumption (leakage power) of digital subsystems. Sub threshold leakage power of MPG Inverter (INV) and 32-bit Digital Comparator (DC) is analyzed and reduced with 35% to 40% leakage savings compared with conventional and existing techniques by simulating it in Cadence GPDK.

P-Type Adiabatic Sequential Circuits for Leakage Reduction of Nanometer Circuits

2010 ◽  
Vol 159 ◽  
pp. 155-161
Author(s):  
Jin Tao Jiang ◽  
Yu Zhang ◽  
Jian Ping Hu
Keyword(s):  
Power Consumption ◽  
Leakage Power ◽  
Sequential Circuits ◽  
Technology Scaling ◽  
Nanometer Cmos ◽  
Gate Structure ◽  
Adiabatic Logic ◽  
Pass Transistor ◽  
P Type ◽  
Cmos Processes

With rapid technology scaling, the proportion of the leakage power catches up with dynamic power gradually. The leakage dissipation through the gate oxide is becoming an important component of power consumption in currently used nanometer CMOS processes without metal gate structure. This paper presents adiabatic sequential circuits using P-type complementary pass-transistor adiabatic logic circuit (P-CPAL) to reduce the gate-leakage power dissipations. A practical sequential system with a mode-10 counter is demonstrated using the P-CPAL scheme. All circuits are simulated using HSPICE under 65nm and 90nm CMOS processes. Simulations show that the mode-10 counter using P-CPAL circuits obtains significant improvement in terms of power consumption over the traditional N-type CPAL counterparts.

scholarly journals Design and Implementation of Energy Efficient Power Gated MALFA Cell

2019 ◽  
Vol 8 (4) ◽  
pp. 1178-1181
Keyword(s):  
Power Consumption ◽  
Energy Efficient ◽  
Full Adder ◽  
Power Reduction ◽  
Power Gating ◽  
Hybrid Power ◽  
Reduction Techniques ◽  
Hybrid Cmos ◽  
Adiabatic Logic ◽  
Efficient Power

Power gating is one of the power reduction techniques that is mostly suitable for low power VLSI applications. It reduces the power consumption by shutting of the current to the blocks not in use. Hybrid power gating is applied to Modified Adiabatic Logic based Full Adder (ALFA) cell. The proposed ALFA cell reduces the energy consumption by 67.21%, 51.31%, 55.86% and 27.01% when compared to CMOS FA, PTL with TG 16T, hybrid CMOS and PTL with TG 14T. ALFA cell with hybrid power gating technique reduces the power consumption by 1.76, 2.08%, 1.13%, 1.44%, 0.48% and delay by 5.92%, 11.19%, 11.19%, 5.92%, 24.92% when compared to ALFA cell with NMOS sleepy approach, PMOS sleepy approach, PMOS sleepy stack approach, NMOS sleepy stack approach and dual stack approach.

scholarly journals A Novel Cross-Latch Shift Register Scheme for Low Power Applications

2020 ◽  
Vol 11 (1) ◽  
pp. 129
Author(s):  
Po-Yu Kuo ◽  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Jin-Fa Lin
Keyword(s):  
Power Consumption ◽  
Supply Voltage ◽  
Electrical Power ◽  
Average Power ◽  
Leakage Power ◽  
Shift Register ◽  
Cmos Process ◽  
Average Power Consumption ◽  
Simulation Results ◽  
Layout Area

The conventional shift register consists of master and slave (MS) latches with each latch receiving the data from the previous stage. Therefore, the same data are stored in two latches separately. It leads to consuming more electrical power and occupying more layout area, which is not satisfactory to most circuit designers. To solve this issue, a novel cross-latch shift register (CLSR) scheme is proposed. It significantly reduced the number of transistors needed for a 256-bit shifter register by 48.33% as compared with the conventional MS latch design. To further verify its functions, this CLSR was implemented by using TSMC 40 nm CMOS process standard technology. The simulation results reveal that the proposed CLSR reduced the average power consumption by 36%, cut the leakage power by 60.53%, and eliminated layout area by 34.76% at a supply voltage of 0.9 V with an operating frequency of 250 MHz, as compared with the MS latch.

Design for Test and Diagnosis of Power Switches

2015 ◽  
Vol 25 (03) ◽  
pp. 1640013
Author(s):  
Miroslav Valka ◽  
Alberto Bosio ◽  
Luigi Dilillo ◽  
Patrick Girard ◽  
Arnaud Virazel ◽  
...  
Keyword(s):  
Power Consumption ◽  
Industrial Test ◽  
Design For Test ◽  
Power Gating ◽  
Test Quality ◽  
Worst Case ◽  
Manufacturing Defects ◽  
Efficient Test ◽  
Power Switches ◽  
Static Power

Power gating techniques have been adopted so far to reduce the static power consumption of integrated circuits (ICs). Power gating is usually implemented by means of several power switches (PSs). Manufacturing defects affecting PSs can lead to increase in the actual static power consumption and, in the worst case, they can completely isolate a functional block in the IC. Thus, efficient test and diagnosis solutions are needed. In this paper, we present a novel Design for Test and Diagnosis (DfTD) solution able to increase the test quality and diagnosis accuracy of PSs. The proposed approach has been validated through SPICE simulations on ITC’99 benchmark circuits as well as on industrial test cases.

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