Sample Preparation Technique for Bond Pad IMD (Inter-Metal Dielectric) Damage Observation

2008 ◽  
Author(s):  
Y. S. Huan ◽  
Y. L. Kuo ◽  
Y.T. Lin ◽  
Jeff Chen ◽  
K.Y. Lee
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Optical Microscope ◽  
Wire Bonding ◽  
Preparation Technique ◽  
Oxide Layers ◽  
Study Results ◽  
Different Temperatures ◽  
Oxide Damage

Abstract Wire bonding is the most highly used interconnection technology in the packaging of integrated circuits. One of the potential risks of wire bonding is the damage on the oxide layers underneath the bond pad. Oxide damage monitoring is necessary to ensure bonding has no impact on the oxide layers under the bond pad. Since the oxide layer is not seen by visual inspection, bond pad stripping is necessary. Three bond pad stripping chemicals KOH, Aqua regia, and phosphoric acid were investigated in this study. Results obtained by dipping the chemicals at different temperatures, and time scales will be given. An optical microscope (OM) and scanning electron microscope (SEM) are used to observe the oxide conditions from the top view. To understand the mechanism of the oxide damage caused by wire bonding, a focused ion beam was used to observe the cross-section of the defect.

BGA and Advanced Package Wire to Wire Bonding for Backside Emission Microscopy

1999 ◽  
Author(s):  
Jim B. Colvin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Wire Bonding ◽  
Preparation Technique ◽  
Low Profile ◽  
Normal Test ◽  
Silicon Thickness ◽  
Working Distance ◽  
Polished Side ◽  
Analytical Tools

Abstract A new method of preparation will be shown which allows traditional fixturing such as test heads and probe stations to be utilized in a normal test mode. No inverted boards cabled to a tester are needed since the die remains in its original package and is polished and rebonded to a new package carrier with the polished side facing upward. A simple pin reassignment is all that is needed to correct the reverse wire sequence after wire to wire bonding or wire to frame bonding in the new package frame. The resulting orientation eliminates many of the problems of backside microscopy since the resulting package orientation is now frontside. The low profile as a result of this technique allows short working distance objectives such as immersion lenses to be used across the die surface. Test equipment can be used in conjunction with analytical tools such as the emission microscope or focused ion beam due to the upright orientation of the polished backside silicon. The relationship between silicon thickness and transmission for various wavelengths of light will be shown. This preparation technique is applicable to advanced packaging methods and has the potential to become part of future assembly processes.

X-Sectional Scanning Capacitance Microscopy (SCM) Applications on Deep Submicron Devices at Specific Sites

2010 ◽  
Author(s):  
Xiang-Dong Wang ◽  
Yuk Tsang ◽  
Clifford Howard
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Cmos Technology ◽  
Optical Microscope ◽  
Deep Submicron ◽  
Polished Surface ◽  
Preparation Technique ◽  
Scanning Capacitance Microscopy ◽  
Area Of Interest ◽  
Sram Cell

Abstract In this paper, we present our recent applications of scanning capacitance microscopy (SCM) on specific devices with sampling window as small as 100nm. The dopant related root causes were successfully identified on those devices fabricated with 90nm CMOS technology. The key step in our approach is the development of a sample preparation technique that allows us to precisely x-section through a transistor without being affected by focused ion beam (FIB) artifacts. FIB was used to mark the area of interest with high precision, but it did not expose the devices of interest. Optical microscope and atomic force microscope (AFM) were used to inspect the mechanically polished surface, thus avoiding beam effects from FIB or SEM. In the first application, a doping anomaly was identified in a PFET poly gate, in a single bit failed SRAM cell. In the second application, an asymmetry of a PWell implant profile in a window of 150nm was identified as the cause of leakage in a capacitor array. Our approach may be applied to other scanning probe microscopy (SPM) techniques in the same category, i.e., scanning spreading resistance microscopy (SSRM) or scanning microwave microscopy (SMM).

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Phase-Shifting Electron Holography for Accurate Measurement of Potential Distributions in Organic and Inorganic Semiconductors

Microscopy ◽  
2020 ◽  
Author(s):  
Kazuo Yamamoto ◽  
Satoshi Anada ◽  
Takeshi Sato ◽  
Noriyuki Yoshimoto ◽  
Tsukasa Hirayama
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Phase Measurement ◽  
Ion Beam ◽  
Functional Materials ◽  
Phase Shifting ◽  
Future Research ◽  
Electron Holography ◽  
Preparation Technique ◽  
Inorganic Semiconductors

Abstract Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths, and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas (2DEG) layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence (OEL) multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.

Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices

2020 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
R. Li ◽  
M.L. Ray ◽  
P.E. Fischione ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Specific Area ◽  
Cutting Edge ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sample Preparation Technique

Abstract Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.

Precision TEM Specimen Preparation for Integrated Circuits using Dual-Beam FIB Lift-Out Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 516-517
Author(s):  
Youren Xu ◽  
Chris Schwappach ◽  
Ron Cervantes
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Single Beam ◽  
Dual Beam ◽  
Technological Advances ◽  
Endpoint Control ◽  
Practical Standpoint ◽  
Beam Damage

Focused ion beam lift-out technique has become increasingly attractive to the TEM community due to its unique advantage of no mechanical grinding/polishing involved in the process [1-3]. The technique essentially consists of two parts: preparation of membrane using focused ion beam (FIB) and transfer of the membrane (lift-out) to a grid. Up to date, this technique has only been demonstrated on single beam FIB systems. From a practical standpoint, overall sample quality (thickness) and lack of end-point precision are two major issues associated with the conventional single beam FIB technique. These issues are primarily related to ion beam damage and endpoint control encountered during the final stages of specimen thinning. As a result, the widespread use of FIB lift-out technique for high precision TEM specimen preparation has been limited. Recent technological advances have made it possible to combine both an electron beam column and an ion beam column into an integrated dual beam-focused ion beam (DB-FIB) system.

Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device

2017 ◽  
Vol 23 (3) ◽  
pp. 484-490 ◽  
Author(s):  
Andrey Denisyuk ◽  
Tomáš Hrnčíř ◽  
Jozef Vincenc Oboňa ◽  
Sharang ◽  
Martin Petrenec ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
State Of The Art ◽  
Incident Angle ◽  
Ion Beam ◽  
Preparation Technique ◽  
Metal Contacts ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Tem Lamella

AbstractWe report on the mitigation of curtaining artifacts during transmission electron microscopy (TEM) lamella preparation by means of a modified ion beam milling approach, which involves altering the incident angle of the Ga ions by rocking of the sample on a special stage. We applied this technique to TEM sample preparation of a state-of-the-art integrated circuit based on a 14-nm technology node. Site-specific lamellae with a thickness <15 nm were prepared by top-down Ga focused ion beam polishing through upper metal contacts. The lamellae were analyzed by means of high-resolution TEM, which showed a clear transistor structure and confirmed minimal curtaining artifacts. The results are compared with a standard inverted thinning preparation technique.

AFM and FIB Study of Cyclic Strain Localization and Surface Relief Evolution in Fatigued f.c.c. Polycrystals

2014 ◽  
Vol 891-892 ◽  
pp. 524-529 ◽  
Author(s):  
Jiří Man ◽  
Miroslav Valtr ◽  
Ivo Kuběna ◽  
Martin Petrenec ◽  
Karel Obrtlík ◽  
...  
Keyword(s):  
Surface Relief ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fatigue Crack Initiation ◽  
Cyclic Strain ◽  
Force Microscopy ◽  
Physically Based ◽  
Relief Formation ◽  
316L Steel ◽  
Different Temperatures

Atomic force microscopy (AFM) and focused ion beam technique (FIB) were adopted to study the early stages of surface relief evolution in 316L steel and polycrystalline copper fatigued with constant plastic strain amplitudes at different temperatures (316L steel at 93, 173 and 573 K; copper at 83, 173 and 295 K). Qualitative and quantitative data on the morphology and shape of persistent slip markings (PSMs), occurrence of extrusions and intrusions and the kinetics of extrusion growth are reported. They are discussed in relation with recent physically based theories of surface relief formation leading to fatigue crack initiation.

Focused Ion Beam Metrology

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Wagner ◽  
P. Blauner ◽  
P. Longo ◽  
S. Cohen
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dimensional Change ◽  
Critical Dimension ◽  
Ion Beams ◽  
Near Surface ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

AbstractFocused Ion Beams offer a new method of measuring the size of polymer resist features on integrated circuits. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension (CD) metrology. By confining the polymer damage to the very near surface, ion beams can induce less dimensional change than scanning electron microscopes during the measurement process. This can result in improved CD measurement precision. The erosion rate of polymers to various ion species is also presented, and we show that erosion is non-linear with ion dose. The use of FIB for forming resist cross sections is also demonstrated. An H20 gas assisted etching process for polymers has been developed, and is shown to significantly improve the quality of resist cross sections.

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