Ultra Low Voltage Probing on 45 nm CMOS by Time Resolved Emission (TRE) Technology

2007 ◽  
Author(s):  
Chi-Lin Young ◽  
Paul Ng ◽  
Francisco Contreras ◽  
Radu Ispasoiu ◽  
Jim Vickers ◽  
...  
Keyword(s):  
Low Voltage ◽  
Detection Efficiency ◽  
Supply Voltage ◽  
Operation Condition ◽  
Power Supply Voltage ◽  
Time Resolved ◽  
Practical Operation ◽  
Photon Detection Efficiency ◽  
Optical Probing ◽  
Detector Technology

Abstract Ultra low voltage probing by time resolved emission (TRE) technology below 1.0V is very challenging for micro-processor debug in practical operation condition. This is because the photo-emission rate reduces exponentially as the power supply voltage decreases. In this paper, a novel technology with improved detector in solid immersion lens (SIL) TRE system was demonstrated for low voltage and small node probing. An improved detecting scheme was developed to collect 30% more photon detection efficiency than the previous system. The SIL TRE with low dark noise detector technology has been successfully applied to optical probing for 45nm product debug. The performance gain improvement in strong and weak signal regime has been demonstrated against the current detector technology. It has also demonstrated the capability on probing the ultra low voltage at 0.75 V for sub micron node of 45nm process.

A Position-Sensitive, Single-Photon Detector with Enhanced NIR Response

2011 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
Alan J. Weger ◽  
Tomonori Nakamura ◽  
Stanley Kim ◽  
...  
Keyword(s):  
Near Infrared ◽  
Low Voltage ◽  
Supply Voltage ◽  
Single Photon ◽  
Single Photon Detector ◽  
Power Supply Voltage ◽  
Time Resolved ◽  
Two Generations ◽  
Advanced Analysis ◽  
Position Sensitive

Abstract In this paper, we evaluate a novel, position-sensitive, singlephoton detector with enhanced Near InfraRed (NIR) sensitivity [1-3] for taking 2D Time Resolved Emission (TRE), also known as Picosecond Imaging for Circuit Analysis (PICA), in future low voltage SOI technologies. In particular, we will investigate and quantify the sensitivity of two generations (Gen. I and Gen. II) of PICA cameras by Hamamatsu Photonics as a function of the power supply voltage on an IBM 45 nm SOI test chip. Additionally, we will compare the results to the performance obtained with an InGaAs Single Photon Avalanche Diode (SPAD) from DCG Systems [4]. Finally we will show a case study and an advanced analysis and localization technique that takes advantage of the 2D capability of the camera.

scholarly journals Low-voltage, low-power and high gain cmosota using active positive feedback with feed forward and FDCM techniques

2002 ◽  
Vol 15 (1) ◽  
pp. 93-101
Author(s):  
Lyes Bouzerara ◽  
Tahar Belaroussi ◽  
Boualem Amirouche
Keyword(s):  
Positive Feedback ◽  
Low Voltage ◽  
Supply Voltage ◽  
Phase Margin ◽  
Current Mirror ◽  
Power Supply Voltage ◽  
Gain Bandwidth ◽  
Frequency Dependent ◽  
Feed Forward ◽  
Current Mirrors

A low voltage, high dc gain and wideband load compensated cas code operational transconductance amplifier (OTA), using an active positive feedback with feed forward technique and frequency-dependent current mirrors (FDCM), is presented and analyzed. Such techniques stand as a powerful method of gain bandwidth and phase margin enhancements. In this paper, a frequency-dependent current mirror, whose input impedance increases with frequency, is used to form the feed forward path at the input of the current mirror with a feed forward capacitor. By using these techniques, the gain bandwidth product of the amplifier is improved from 115 MHz to 194 MHz, the phase margin is also improved from 85? to 95? and the gain is enhanced from 11 dB to 93 dB. This amplifier operates at 2.5 V power supply voltage drives a capacitive load of 1pF and gives a power dissipation of 7 mW. The predicted performance is verified by simulations using HSPICE tool with 0.8 fim CMOS AMS parameters.

scholarly journals Low-voltage 0.35-/mi cmos wideband operational transconductance amplifier

2002 ◽  
Vol 15 (3) ◽  
pp. 361-369
Author(s):  
Lyes Bouzerara ◽  
Mohand Belaroussi
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Output Impedance ◽  
Power Supply Voltage ◽  
Gain Bandwidth ◽  
Current Mirrors ◽  
Transconductance Amplifier ◽  
Cascade Structure ◽  
Feedback Frequency ◽  
High Output Impedance

A low voltage CMOS wideband operational Tran conductance amplifier (OTA) using regulated cascade structure with an active positive feedback frequency-dependent current mirrors and feed forward techniques, is presented and analyzed. Such techniques stand as a powerful method of gain bandwidth, output impedance and phase margin enhancements. In this paper, an efficient implementation of a high output impedance current mirror is used in the design of an OTA by means of the regulated cascade circuits. This amplifier operates at ?1.25 V power supply voltage, exhibits a voltage gain of 68 dB, and provides a gain bandwidth product of 166 MHz. It drives a capacitive load of 1.6 pF and gives a power dissipation of 8.5 mW. The predicted performance is verified by simulations using HSPICE tool with 0.35 /itm CMOS TSMC parameters.

A Superconducting Nanowire Single-Photon Detector (SnSPD) System for Ultra Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuits

2013 ◽  
Author(s):  
Franco Stellari ◽  
Alan J. Weger ◽  
Seongwon Kim ◽  
Dzmitry Maliuk ◽  
Peilin Song ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Single Photon ◽  
Vlsi Circuits ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
Superconducting Nanowire ◽  
Emission Light

Abstract In this paper, we present a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to ultra low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits. The 9 µm-diameter detector is housed in a closed loop cryostat and fiber coupled to an existing Emiscope III tool for collecting spontaneous emission light from the backside of integrated circuits (ICs) down to a world record 0.5 V supply voltage in a few minutes.

Next-Generation Optical Probing Tools for Design Debug of High Speed Integrated Circuits

2002 ◽  
Author(s):  
William Lo ◽  
Kenneth Wilsher ◽  
Richard Malinsky ◽  
Nina Boiadjieva ◽  
Chun-Cheng Tsao ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Detection Efficiency ◽  
Single Photon ◽  
Photon Emission ◽  
Next Generation ◽  
Large Area ◽  
Single Photon Detector ◽  
Time Resolved ◽  
Optical Probing

Abstract Time-resolved photon emission (TRPE) results, obtained using a new superconducting, single-photon detector (SSPD) are reported. Detection efficiency (DE) for large area detectors has recently been improved by >100x without affecting SSPDs inherently low jitter (≈30 ps) and low dark-count rate (<30 s-1). TRPE measurements taken from a 0.13 μm geometry CMOS IC are presented. A single laser, time-differential probing scheme that is being investigated for next-generation laser voltage probing (LVP) is also discussed. This new scheme is designed to have shot-noise-limited performance, allowing signals as small as 100 parts-per-million (ppm) to be reliably measured.

TUNABLE ACTIVE FILTERS FOR RF AND MICROWAVE APPLICATIONS

2014 ◽  
Vol 23 (06) ◽  
pp. 1450088 ◽  
Author(s):  
LEONARDO PANTOLI ◽  
VINCENZO STORNELLI ◽  
GIORGIO LEUZZI
Keyword(s):  
Power Consumption ◽  
Power Supply ◽  
Bandpass Filter ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Active Filters ◽  
Center Frequency ◽  
Power Supply Voltage ◽  
Microwave Applications

In this paper, we present a low-voltage tunable active filter for microwave applications. The proposed filter is based on a single-transistor active inductor (AI), that allows the reduction of circuit area and power consumption. The three active-cell bandpass filter has a 1950 MHz center frequency with a -1 dB flat bandwidth of 10 MHz (Q ≈ 200), a shape factor (30–3 dB) of 2.5, and can be tuned in the range 1800–2050 MHz, with constant insertion loss. A dynamic range of about 75 dB is obtained, with a P1dB compression point of -5 dBm. The prototype board, fabricated on a TLX-8 substrate, has a 4 mW power consumption with a 1.2 V power supply voltage.

scholarly journals A 0.6 V MOS-Only Voltage Reference for Biomedical Applications with 40 ppm/∘C Temperature Drift

2018 ◽  
Vol 27 (08) ◽  
pp. 1850128 ◽  
Author(s):  
R. Nagulapalli ◽  
K. Hayatleh ◽  
Steve Barker ◽  
Sumathi Raparthy ◽  
Nabil Yassine ◽  
...  
Keyword(s):  
Power Supply ◽  
Biomedical Applications ◽  
Low Voltage ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
Voltage Reference ◽  
Mos Transistors ◽  
Power Supply Voltage ◽  
Temperature Drift ◽  
Ultra Low Power

This paper exploits the CMOS beta multiplier circuit to synthesize a temperature-independent voltage reference suitable for low voltage and ultra-low power biomedical applications. The technique presented here uses only MOS transistors to generate Proportional To Absolute Temperature (PTAT) and Complimentary To Absolute Temperature (CTAT) currents. A self-biasing technique has been used to minimize the temperature and power supply dependency. A prototype in 65[Formula: see text]nm CMOS has been developed and occupies 0.0039[Formula: see text]mm2, and at room temperature, it generates a 204[Formula: see text]mV reference voltage with 1.3[Formula: see text]mV drift over a wide temperature range (from [Formula: see text]40[Formula: see text]C to 125[Formula: see text]C). This has been designed to operate with a power supply voltage down to 0.6[Formula: see text]V and consumes 1.8[Formula: see text]uA current from the supply. The simulated temperature coefficient is 40[Formula: see text]ppm/[Formula: see text]C.

scholarly journals Design techniques for low-voltage analog integrated circuits

2017 ◽  
Vol 68 (4) ◽  
pp. 245-255 ◽  
Author(s):  
Matej Rakús ◽  
Viera Stopjaková ◽  
Daniel Arbet
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Building Blocks ◽  
Cmos Process ◽  
Mos Transistors ◽  
Power Supply Voltage ◽  
Current Mirrors ◽  
Moderate Inversion ◽  
Design Techniques

AbstractIn this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

scholarly journals TIQ Flash ADC Design using a Low Power Multiplier Based Encoder

2019 ◽  
Vol 8 (2S2) ◽  
pp. 226-229
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Low Voltage ◽  
Supply Voltage ◽  
Power Supply Voltage ◽  
Large Power ◽  
Flash Adc ◽  
Analog To Digital ◽  
Tiq Comparator ◽  
The Impact

Threshold Inverter Quantization (TIQ) for applications of system-on-chip (SoC) depending on CMOS flash analog-to-digital converter (ADC). The TIQ technique which uses two cascaded CMOS inverters as a voltage comparator. However, this TIQ method must be created to meet the latest SoC trends, which force ADCs to be integrated with another electronic circuit on the chip and focus on low-power and low-voltage applications. TIQ comparator reduced the impact of variations in the process, temperature, and power supply voltage. Therefore, we obtained a higher TIQ flash ADC speed and resolution. TIQ flash ADC reduced / managed power dissipation. We obtain large power savings by managing the power dissipation in the comparator. Furthermore, the new comparator has a huge benefit in power dissipation and noise rejection comparative to the TIQ comparator [1]. The findings indicate that the TIQ flash ADC based on Modied mux attain heavy-speed transformation and has a tiny size, low-power dissipation and operation of lowvoltage compared to another flash ADCs.

The design and characterization of high photon detection efficiency CMOS single-photon avalanche diode

2018 ◽  
Vol 32 (25) ◽  
pp. 1850302
Author(s):  
Wei Wang ◽  
Ting Chen ◽  
Yongchun He ◽  
Mengjia Huang ◽  
Hao Yang ◽  
...  
Keyword(s):  
Low Voltage ◽  
Detection Efficiency ◽  
Single Photon ◽  
Uniform Electric Field ◽  
Cmos Process ◽  
Guard Ring ◽  
Voltage Standard ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

The high photon detection efficiency (PDE) single-photon avalanche diode (SPAD) designed with a low voltage standard 0.18 [Formula: see text]m CMOS process is investigated in detail. The proposed CMOS SPAD is with P+/N-well junction structure, and its multiplication region is surrounded by a virtual guard ring, with which the premature edge avalanche breakdown can be prevented. The analytical and simulation results show that the CMOS SPAD has a uniform electric field distribution in P+/N-well junction, and the breakdown voltage is as low as 8.2 V, the PDE is greater than 40% at the wavelength range of 650–950 nm, at a low excess bias voltage (light intensity is about 0.001 W/cm2), and the peak PDE at 800 nm is about 48%, the relatively low dark count rate (DCR) of 1.4 KHz is obtained.

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